| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 08/11/1987 | US4686553 Low capacitance amorphous silicon field effect transistor structure |
| 08/11/1987 | US4686552 Integrated circuit trench cell |
| 08/11/1987 | US4686551 MOS transistor |
| 08/11/1987 | US4686550 Heterojunction semiconductor devices having a doping interface dipole |
| 08/11/1987 | US4686541 High resolution image restitution apparatus for a plane film supplied from a coil and cut into film-portions |
| 08/11/1987 | US4686373 Infrared imager |
| 08/11/1987 | US4686000 Integrated circuits |
| 08/11/1987 | US4685197 Fabricating a stacked capacitor |
| 08/11/1987 | US4685196 Method for making planar FET having gate, source and drain in the same plane |
| 08/11/1987 | US4685195 Method for the manufacture of at least one thin film field effect transistor |
| 08/11/1987 | CA1225464A1 Semiconductor device having narrow coplanar silicon electrodes |
| 08/05/1987 | EP0231049A1 Charge-coupled device |
| 08/05/1987 | EP0230840A1 Permeable base transistor and process for its manufacture |
| 08/05/1987 | EP0230820A1 Method of realizing electrodes aligned in regard to an implantation level within a substrate, and method of realizing a filter for charge transfer |
| 08/05/1987 | EP0230689A2 Bipolar semiconductor device with wall spacer and method of making |
| 08/05/1987 | EP0230508A2 Structured semiconductor body |
| 08/05/1987 | EP0094426B1 Bandgap control in amorphous semiconductors |
| 08/04/1987 | US4685117 Base clipping process for a solid state photosensitive device |
| 08/04/1987 | US4684972 Non-volatile amorphous semiconductor memory device utilizing a forming voltage |
| 08/04/1987 | US4684971 Ion implanted CMOS devices |
| 08/04/1987 | US4684970 High current lateral transistor structure |
| 08/04/1987 | US4684967 Low capacitance transistor cell element and transistor array |
| 08/04/1987 | US4684966 Static induction transistor photodetector having a deep shielding gate region |
| 08/04/1987 | US4684877 Electrical system utilizing a concentric collector PNP transistor |
| 08/04/1987 | US4684812 Switching circuit for a detector array |
| 08/04/1987 | US4684800 Low-noise charge-injection method and apparatus for IR CCD scanning |
| 08/04/1987 | US4684435 Method of manufacturing thin film transistor |
| 08/04/1987 | US4684413 Method for increasing the switching speed of a semiconductor device by neutron irradiation |
| 08/04/1987 | US4683643 Method of manufacturing a vertical MOSFET with single surface electrodes |
| 08/04/1987 | US4683642 Method for fabricating MOMS semiconductor device |
| 08/04/1987 | US4683637 Forming depthwise isolation by selective oxygen/nitrogen deep implant and reaction annealing |
| 08/04/1987 | CA1225164A1 Integrated field controlled thyristor structure with grounded cathode |
| 07/30/1987 | WO1987004565A1 Matrix of interconnected transistors in thin layers and production method thereof |
| 07/30/1987 | WO1987004564A1 Process for forming cmos structures |
| 07/30/1987 | WO1987004563A1 Methods for fabricating transistors and mos transistors fabricated by such methods |
| 07/30/1987 | WO1987000690A3 High-performance dram arrays including trench capacitors |
| 07/30/1987 | DE3602073A1 Force measuring device |
| 07/29/1987 | EP0230278A2 Thyristor with integrated power supply for a related circuit unit and method of manufacturing the same |
| 07/29/1987 | EP0230084A1 Blister FET pressure sensor |
| 07/28/1987 | US4683580 CCD output signal processing circuit for use in an image pick-up device |
| 07/28/1987 | US4683554 Direct write nonvolatile memory cells |
| 07/28/1987 | US4683487 Heterojunction bipolar transistor |
| 07/28/1987 | US4683486 dRAM cell and array |
| 07/28/1987 | US4683485 Technique for increasing gate-drain breakdown voltage of ion-implanted JFET |
| 07/28/1987 | US4683484 Lateral confinement of charge carriers in a multiple quantum well structure |
| 07/28/1987 | US4683483 Subsurface zener diode and method of making |
| 07/28/1987 | US4683442 Operational amplifier circuit utilizing resistors trimmed by metal migration |
| 07/28/1987 | US4682409 Fast bipolar transistor for integrated circuit structure and method for forming same |
| 07/28/1987 | US4682408 Semiconductors, silicon dioxide, silicon nitride, silanol, heat treatment, dopes, oxidation, masking |
| 07/28/1987 | US4682407 Means and method for stabilizing polycrystalline semiconductor layers |
| 07/28/1987 | US4682405 Methods for forming lateral and vertical DMOS transistors |
| 07/28/1987 | US4682404 MOSFET process using implantation through silicon |
| 07/28/1987 | US4682403 Method for interconnecting the active zones and gates of CMOS integrated circuits |
| 07/28/1987 | US4682402 Semiconductor device comprising polycrystalline silicon resistor element |
| 07/28/1987 | CA1224886A1 Semiconductor device and process for producing the same |
| 07/28/1987 | CA1224885A1 Integrated circuit and method for producing it |
| 07/23/1987 | DE3701186A1 Integrated circuit device |
| 07/22/1987 | EP0229672A2 A heterojunction bipolar transistor having a base region of germanium |
| 07/22/1987 | EP0229427A1 Method of manufacturing a semiconductor device, in which a dopant is diffused from its oxide into a semiconductor body |
| 07/22/1987 | EP0229426A1 Method of manufacturing a semiconductor device, in which a metallization with a thick connection electrode is provided on a semiconductor body |
| 07/22/1987 | EP0229362A2 Semiconductor device and method of fabrication |
| 07/22/1987 | CN86100192A Mos transistor with high transconductance and high early voltage |
| 07/21/1987 | US4682206 Silicon, dopes |
| 07/21/1987 | US4682205 Semiconductor device |
| 07/21/1987 | US4682199 High voltage thyristor with optimized doping, thickness, and sheet resistivity for cathode base layer |
| 07/21/1987 | US4682198 Gate turn-off thyristor with integral capacitive anode |
| 07/21/1987 | US4682197 Power transistor with spaced subtransistors having individual collectors |
| 07/21/1987 | US4682196 Multi-layered semi-conductor photodetector |
| 07/21/1987 | US4682195 Insulated gate device with configured emitter contact pad |
| 07/21/1987 | US4680853 Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide |
| 07/16/1987 | WO1987004300A1 Procedure for manufacturing a piezoresistive resistance element and apparatus applying said procedure, and pick-up manufactured by the procedure, in particular a pressure pick-up or equivalent |
| 07/15/1987 | EP0228956A1 High-frequency power transistor |
| 07/15/1987 | EP0228815A2 Field effect transistors |
| 07/15/1987 | EP0228764A1 Semiconductor device having at least one field-effect transistor with controlled source drain current |
| 07/15/1987 | EP0228761A1 Semiconductor non-volatile memory |
| 07/15/1987 | EP0228748A1 Method of producing an integrated lateral transistor, and integrated circuit containing it |
| 07/15/1987 | EP0228624A2 Field effect transistor |
| 07/15/1987 | EP0228516A2 Modulation-doped field-effect transistor |
| 07/14/1987 | US4680810 Means for controlling a semiconductor device and communication system comprising the means |
| 07/14/1987 | US4680619 Memory cells |
| 07/14/1987 | US4680615 Silicon semiconductor component with an edge contour made by an etching technique, and method for manufacturing this component |
| 07/14/1987 | US4680612 Aluminum interconnect layer |
| 07/14/1987 | US4680611 Multilayer ohmic contact for p-type semiconductor and method of making same |
| 07/14/1987 | US4680608 Semiconductor device |
| 07/14/1987 | US4680606 Semiconductor transducer |
| 07/14/1987 | US4680605 High voltage depletion mode transistor with serpentine current path |
| 07/14/1987 | US4680604 Conductivity modulated MOS transistor device |
| 07/14/1987 | US4680603 Graded extended drain concept for reduced hot electron effect |
| 07/14/1987 | US4680601 Schottky power diode |
| 07/14/1987 | US4680600 Semiconductor device |
| 07/14/1987 | US4680569 Semiconductor pressure sensor |
| 07/14/1987 | US4679309 Process for manufacturing isolated semi conductor components in a semi conductor wafer |
| 07/14/1987 | US4679308 Implanting a gettering agent, ashing |
| 07/14/1987 | US4679307 Method of manufacturing a recessed gate of a semiconductor device |
| 07/14/1987 | US4679305 Method of manufacturing a heterojunction bipolar transistor having self-aligned emitter and base and selective isolation regions |
| 07/14/1987 | US4679301 Process for producing silicide or silicon gates for an integrated circuit having elements of the gate-insulator-semiconductor type |
| 07/14/1987 | US4679300 Integrated circuits |
| 07/14/1987 | US4679299 Formation of self-aligned stacked CMOS structures by lift-off |
| 07/14/1987 | US4679298 Gallium arsenide |
| 07/14/1987 | CA1224280A1 Ion implantation to increase emitter energy gap in bipolar transistors |