| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/12/1987 | US4665412 Coupled heterostructure superlattice devices |
| 05/12/1987 | US4665278 Heat-resistant photoelectric converter |
| 05/12/1987 | US4664762 Method for etching a silicon substrate |
| 05/12/1987 | US4663831 Method of forming transistors with poly-sidewall contacts utilizing deposition of polycrystalline and insulating layers combined with selective etching and oxidation of said layers |
| 05/12/1987 | US4663830 Forming deep buried grids of implanted zones being vertically and laterally offset by mask MEV implant |
| 05/12/1987 | US4663827 Forming polycrystalline silicon layer, masking, implanting nitrogen, annealing |
| 05/07/1987 | WO1987002826A1 Partial direct injection for signal processing system |
| 05/07/1987 | WO1987002825A1 A method for mos transistor manufacture |
| 05/06/1987 | EP0220989A1 Charge transport device and method for its production |
| 05/06/1987 | EP0220974A1 Power semiconductor component and associated control logic |
| 05/06/1987 | EP0220789A2 CMOS voltage reference |
| 05/06/1987 | EP0220698A2 Thyristor with a disc-shaped housing |
| 05/06/1987 | EP0220605A2 Method of making self-aligned GaAs digital integrated circuits |
| 05/06/1987 | EP0220542A2 Dielectric-filled-groove isolation structures for semiconductor devices |
| 05/06/1987 | EP0220500A1 Semiconductor device with reduced capacitive load and manufacturing process thereof |
| 05/06/1987 | EP0220469A1 Power thyristor |
| 05/06/1987 | EP0040251B1 Semiconductor memory device |
| 05/06/1987 | CN85109732A Feedback power step circuit using thyristors and capacitors |
| 05/06/1987 | CN85107886A Screening method of mosfet by gate-voltage and temp. |
| 05/05/1987 | US4663740 High speed eprom cell and array |
| 05/05/1987 | US4663739 Semiconductor memories |
| 05/05/1987 | US4663647 Buried-resistance semiconductor device and fabrication process |
| 05/05/1987 | US4663644 Semiconductor device and method of manufacturing the same |
| 05/05/1987 | US4663643 Semiconductor device and process for producing the same |
| 05/05/1987 | US4663191 Salicide process for forming low sheet resistance doped silicon junctions |
| 05/05/1987 | US4662957 Method of producing a gate turn-off thyristor |
| 05/05/1987 | US4662719 Liquid crystal display and method for production |
| 05/05/1987 | US4662062 Method for making bipolar transistor having a graft-base configuration |
| 05/05/1987 | US4662060 Method of fabricating semiconductor device having low resistance non-alloyed contact layer |
| 05/05/1987 | US4662059 Semiconductors |
| 05/05/1987 | US4662058 Integrated circuits, aluminum, gallium, arsenic field effect transistor |
| 05/05/1987 | US4662057 Method of manufacturing a semiconductor integrated circuit device |
| 05/05/1987 | CA1221475A1 High-purity molybdenum target and high-purity molybdenum silicide target for lsi electrodes and process for producing the same |
| 05/05/1987 | CA1221474A1 Schottky-gate field effect transistor |
| 04/29/1987 | EP0220120A1 Method for producing a charge transport device, and charge transport device manufactured thereby |
| 04/29/1987 | EP0220109A2 Improved trench capacitor and DRAM memory cell |
| 04/29/1987 | EP0220020A2 Multiple-value logic circuitry |
| 04/29/1987 | EP0219995A2 Gate turn-off thyristor with independent turn-on/off controlling transistors |
| 04/29/1987 | EP0219827A2 Improved process for forming low sheet resistance metal silicide layers on semiconductor substrates |
| 04/29/1987 | EP0219641A1 Integrated circuit comprising bipolar and complementary MOS transistors on a common substrate, and method of making the same |
| 04/29/1987 | EP0219543A1 Sealed cavity semiconductor pressure transducers and method. |
| 04/29/1987 | EP0034166B1 Semiconductor embedded layer technology |
| 04/29/1987 | CN86105609A Double injection field effect transistors |
| 04/28/1987 | US4661838 High voltage semiconductor devices electrically isolated from an integrated circuit substrate |
| 04/28/1987 | US4661836 Fabricating integrated circuits |
| 04/28/1987 | US4661834 Semiconductor structures and manufacturing methods |
| 04/28/1987 | US4661833 Electrically erasable and programmable read only memory |
| 04/28/1987 | US4661829 Device using ordered semiconductor alloy |
| 04/28/1987 | US4661788 Tapped CCD delay line with non-destructive charge sensing using floating diffusions |
| 04/28/1987 | US4661725 Elementary logic circuit obtained by means of field effect transistors of gallium arsenide and compatible with the ECL 100 K technology |
| 04/28/1987 | US4661717 Load condition determining apparatus |
| 04/28/1987 | US4661374 Method of making MOS VLSI semiconductor device with metal gate and clad source/drain |
| 04/28/1987 | US4661167 Using energy beam irradiation |
| 04/28/1987 | US4660276 Forming tungsten silicide contactors |
| 04/28/1987 | CA1221007A1 Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layers |
| 04/23/1987 | WO1987002511A1 Protection of igfet integrated circuits from electrostatic discharge |
| 04/23/1987 | WO1987002504A1 Current metering apparatus |
| 04/22/1987 | EP0219430A2 Self-healing MOS capacitor |
| 04/22/1987 | EP0219346A2 Method for producing a poly emitter logic array, and device produced thereby |
| 04/22/1987 | EP0219243A2 Process of manufacturing a bipolar transistor |
| 04/22/1987 | EP0219241A2 Non-volatile semiconductor memory |
| 04/22/1987 | EP0218697A1 Memory cell for use in a read only memory |
| 04/22/1987 | EP0218685A1 Electrostatic discharge input protection network. |
| 04/22/1987 | EP0218611A1 Monolithic integrated lateral thyristor |
| 04/22/1987 | EP0113983B1 Fabricating a semiconductor device by means of molecular beam epitaxy |
| 04/22/1987 | CN86105632A 数据处理方法 Data processing method |
| 04/21/1987 | US4660068 Substrate structure of semiconductor device and method of manufacturing the same |
| 04/21/1987 | US4660064 Charge coupled device having a floating diffusion region and a precharge diffusion region which are aligned so as to increase the output gain |
| 04/21/1987 | US4660063 Immersion type ISFET |
| 04/21/1987 | US4660062 Insulated gate transistor having reduced channel length |
| 04/21/1987 | US4660008 Pin diode switch mounted in a ridge waveguide |
| 04/21/1987 | US4659979 High voltage current source circuit and method |
| 04/21/1987 | US4659428 Method of manufacturing a semiconductor device and semiconductor device manufactured by means of the method |
| 04/21/1987 | US4658651 Wheatstone bridge-type transducers with reduced thermal shift |
| 04/21/1987 | US4658496 Method for manufacturing VLSI MOS-transistor circuits |
| 04/21/1987 | CA1220876A1 High electron mobility semiconductor device employing selectively doped heterojunction |
| 04/21/1987 | CA1220875A1 Semiconductor device comprising a combined bipolar- field effect transistor |
| 04/16/1987 | DE3632489A1 Semiconductor device |
| 04/15/1987 | EP0218529A2 Distributed field effect transistor structure |
| 04/15/1987 | EP0218408A2 Process for forming lightly-doped-grain (LDD) structure in integrated circuits |
| 04/15/1987 | EP0218342A2 Memory cells for integrated circuits |
| 04/15/1987 | EP0218319A1 Heterojunction bipolar integrated circuit |
| 04/15/1987 | EP0218084A2 Semiconductor device having a MOS transistor and method of manufacturing the same |
| 04/15/1987 | EP0217844A1 Process for the manufacture of a display screen with liquid crystals and a diode network. |
| 04/14/1987 | US4658279 Velocity saturated strain sensitive semiconductor devices |
| 04/14/1987 | US4657775 Method for production of silicon thin film piezoresistive devices |
| 04/14/1987 | US4657658 Semiconductor devices |
| 04/14/1987 | US4656731 Method for fabricating stacked CMOS transistors with a self-aligned silicide process |
| 04/14/1987 | US4656730 Reduce the size of transition zones |
| 04/14/1987 | US4656729 Plasma-enhanced or low-pressure chemical vapor deposition |
| 04/14/1987 | CA1220560A1 Semiconductor device |
| 04/09/1987 | WO1987002183A1 Multijunction semiconductor device |
| 04/09/1987 | WO1987002182A1 Semiconductor device |
| 04/08/1987 | EP0217780A2 Anisotropic rectifier and method for fabricating same |
| 04/08/1987 | EP0217525A1 Electrostatic discharge protection devices for integrated circuits |
| 04/08/1987 | EP0217521A1 Monolithic pin diode and method for its manufacture |
| 04/08/1987 | EP0217406A2 Thin-film transistor and method of fabricating the same |
| 04/08/1987 | EP0217405A1 Transparent conductive film and method of fabricating the same |
| 04/08/1987 | EP0217326A2 Semiconductor device with a high breakdown voltage |
| 04/08/1987 | EP0217266A2 Insulated gate device |