| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/04/1987 | EP0210625A2 Low capacitance amorphous silicon field effect transistor structure |
| 02/04/1987 | EP0210578A2 System and method for depositing an electrical insulator in a continuous process |
| 02/04/1987 | EP0210376A1 Low Voltage clamp |
| 02/04/1987 | EP0210173A1 Semiconductor device and arrangement. |
| 02/03/1987 | US4641280 High-density semiconductor memory device with charge-coupling memory cells |
| 02/03/1987 | US4641279 Semiconductor memory device having a dummy cell and a memory cell which is twice the size of the dummy cell |
| 02/03/1987 | US4641175 Bidirectional power switch with optimized emitter spacing near control electrode |
| 02/03/1987 | US4641174 Pinch rectifier |
| 02/03/1987 | US4641173 Integrated circuit load device |
| 02/03/1987 | US4641171 Monolithically integrated semiconductor power device |
| 02/03/1987 | US4641167 Semiconductor optoelectro transducer |
| 02/03/1987 | US4641166 Semiconductor memory device having stacked capacitor-type memory cells |
| 02/03/1987 | US4641164 Bidirectional vertical power MOS device and fabrication method |
| 02/03/1987 | US4641163 MIS-field effect transistor with charge carrier injection |
| 02/03/1987 | US4641162 Current limited insulated gate device |
| 02/03/1987 | US4641161 Heterojunction device |
| 02/03/1987 | US4640844 Method for the manufacture of gate electrodes formed of double layers of metal silicides having a high melting point and doped polycrystalline silicon |
| 02/03/1987 | US4640749 Electrically conductive pyrrole copolymers and their preparation |
| 02/03/1987 | US4640004 Method and structure for inhibiting dopant out-diffusion |
| 02/03/1987 | US4640003 Method of making planar geometry Schottky diode using oblique evaporation and normal incidence proton bombardment |
| 02/03/1987 | US4640000 Method of manufacturing semiconductor device |
| 02/03/1987 | CA1217576A1 Method of producing a semiconductor device |
| 02/03/1987 | CA1217575A1 Mobility-modulation field-effect transistor |
| 02/03/1987 | CA1217574A1 Integrated semiconductor circuit having an external contacting track level consisting of aluminum or of an aluminum alloy |
| 01/29/1987 | WO1987000693A1 Detector and mixer diode operative at zero bias voltage and fabrication process therefor |
| 01/29/1987 | WO1987000692A1 Semiconductor device |
| 01/29/1987 | WO1987000690A2 High-performance dram arrays including trench capacitors |
| 01/29/1987 | WO1987000684A1 Forming thick dielectric at the bottoms of trenches utilized in integrated-circuit devices |
| 01/29/1987 | WO1987000633A1 Sensors for selective determination of components in liquid or gaseous phase |
| 01/28/1987 | EP0209986A2 Thyristors protected against overvoltage |
| 01/28/1987 | EP0209985A1 Method for forming a fast bipolar transistor for integrated circuit structure |
| 01/28/1987 | EP0209949A2 Method for forming a transistor, and transistor |
| 01/28/1987 | EP0209794A2 Method for producing a contact for a semiconductor device |
| 01/28/1987 | EP0209654A2 Semiconductor device having wiring electrodes |
| 01/28/1987 | EP0209648A1 Wafer base for silicon carbide semiconductor device |
| 01/27/1987 | US4639940 Charge coupled device with meander channel and elongated, straight, parallel gate electrodes |
| 01/27/1987 | US4639893 Self-aligned split gate EPROM |
| 01/27/1987 | US4639892 Semiconductor read-only memory device |
| 01/27/1987 | US4639762 MOSFET with reduced bipolar effects |
| 01/27/1987 | US4639761 Combined bipolar-field effect transistor resurf devices |
| 01/27/1987 | US4639758 Metal oxide semiconductor field-effect transistor with metal source making ohmic contact to channel-base region |
| 01/27/1987 | US4639757 Power transistor structure having an emitter ballast resistance |
| 01/27/1987 | US4639755 Thermosensitive semiconductor device using Darlington circuit |
| 01/27/1987 | US4639754 Vertical MOSFET with diminished bipolar effects |
| 01/27/1987 | US4639753 Semiconductor device |
| 01/27/1987 | US4639752 Fast ternary (GaInAs) logic gate device |
| 01/27/1987 | US4639678 Absolute charge difference detection method and structure for a charge coupled device |
| 01/27/1987 | US4639276 Method of making thyristor with a high tolerable bias voltage |
| 01/27/1987 | US4638551 Schottky barrier device and method of manufacture |
| 01/27/1987 | CA1217116A1 Semiconductor device and method of manufacturing the semiconductor device |
| 01/24/1987 | CN85101868A Image sensor which is insensitive to blurry phenomena and the process of it |
| 01/21/1987 | EP0209425A1 Method for producing a semiconductor device with several levels of gates |
| 01/21/1987 | EP0209196A2 Method of controlling forward voltage across schottky diode |
| 01/21/1987 | EP0209166A1 N channel MOS transistor with limitation of punch-through effect and formation process thereof |
| 01/21/1987 | EP0208970A1 MOFSET having a thermal protection |
| 01/21/1987 | EP0208935A1 Narrow channel width fet |
| 01/21/1987 | EP0208934A1 Narrow channel width fet |
| 01/21/1987 | EP0208911A1 Electronic semiconductor switch |
| 01/21/1987 | EP0208851A1 Fabricating a semiconductor device by means of molecular beam epitaxy |
| 01/21/1987 | EP0208795A1 Method of fabricating a self-aligned metal-semiconductor FET |
| 01/21/1987 | EP0032510B1 Silicon on sapphire laser process |
| 01/20/1987 | US4638464 Charge pump system for non-volatile ram |
| 01/20/1987 | US4638400 Refractory metal capacitor structures, particularly for analog integrated circuit devices |
| 01/20/1987 | US4638347 Gate electrode sidewall isolation spacer for field effect transistors |
| 01/20/1987 | US4638344 Junction field-effect transistor controlled by merged depletion regions |
| 01/20/1987 | US4638342 Space charge modulation device |
| 01/20/1987 | US4637836 Profile control of boron implant |
| 01/20/1987 | US4637128 Method of producing semiconductor device |
| 01/20/1987 | US4637127 Method for manufacturing a semiconductor device |
| 01/20/1987 | US4637124 Process for fabricating semiconductor integrated circuit device |
| 01/20/1987 | CA1216969A1 Method of manufacturing a semiconductor device and semiconductor device manufactured by means of the method |
| 01/20/1987 | CA1216968A1 Insulated-gate semiconductor device with improved base-to-source electrode short and method of fabricating said short |
| 01/20/1987 | CA1216967A1 Semiconductor device |
| 01/20/1987 | CA1216965A1 Method of manufacturing accurately contact windows in a semiconductor device and device made by such method |
| 01/20/1987 | CA1216961A1 Low temperature tunneling transistor |
| 01/17/1987 | CN85101284A 半导体基片 A semiconductor substrate |
| 01/14/1987 | EP0208444A2 Apparatus for obtaining derivative of characteristic curve, and method of controlling operation, of electronic devices |
| 01/14/1987 | EP0208356A1 Method of manufacturing a semiconductor device, in which a silicon slice is locally provided with field oxide with a channel stopper |
| 01/14/1987 | EP0208294A1 Three-dimensional integrated circuit |
| 01/14/1987 | EP0208267A1 Method of producing cross-couplings between N and P channel CMOS field effect transistors of read-and-write memories, particularly with 6-transistor memory devices |
| 01/14/1987 | EP0207968A1 Hot electron unipolar transistor. |
| 01/13/1987 | US4637029 Semiconductor laser |
| 01/13/1987 | US4636984 Semiconductor device having non-volatile storage transistors |
| 01/13/1987 | US4636982 Semiconductor memory device |
| 01/13/1987 | US4636834 Submicron FET structure and method of making |
| 01/13/1987 | US4636830 Insulated gate-controlled thyristor having shorted anode |
| 01/13/1987 | US4636827 Semiconductor device responsive to ions |
| 01/13/1987 | US4636826 Charge coupled devices having narrow coplanar silicon electrodes |
| 01/13/1987 | US4636825 Distributed field effect transistor structure |
| 01/13/1987 | US4636824 Voltage-controlled type semiconductor switching device |
| 01/13/1987 | US4636823 Vertical Schottky barrier gate field-effect transistor in GaAs/GaAlAs |
| 01/13/1987 | US4636822 GaAs short channel lightly doped drain MESFET structure and fabrication |
| 01/13/1987 | US4636658 Voltage detecting device |
| 01/13/1987 | US4635347 Method of fabricating titanium silicide gate electrodes and interconnections |
| 01/13/1987 | US4635343 Uniform threshold voltage, field effect transistors |
| 01/10/1987 | CN85101390A Semiconductor device with control electrode |
| 01/08/1987 | DE3620618A1 GTO Thyristor |
| 01/07/1987 | EP0207486A1 Integrated circuit containing MOS transistors and comprising a gate metallization of a metal or a metal silicide of the elements tantalum or niobium, as well as a method of producing this gate metallization |
| 01/07/1987 | EP0207328A2 Method of making edge-aligned implants and electrodes therefor |
| 01/07/1987 | EP0207266A2 Method of making a spatially periodic semiconductor multilayer structure |