Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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06/09/1987 | US4672419 Metal gate, interconnect and contact system for VLSI devices |
06/09/1987 | US4672416 Semiconductor device |
06/09/1987 | US4672415 Power thyristor on a substrate |
06/09/1987 | US4672414 Planar heterojunction bipolar device and method |
06/09/1987 | US4672413 Barrier emitter transistor |
06/09/1987 | US4672411 Pressure sensor |
06/09/1987 | US4672410 Semiconductor memory device with trench surrounding each memory cell |
06/09/1987 | US4672409 Nonvolatile semiconductor memory device |
06/09/1987 | US4672408 Non-volatile semiconductor memory device |
06/09/1987 | US4672407 Conductivity modulated MOSFET |
06/09/1987 | US4672406 Semiconductor member and semiconductor device employing the same |
06/09/1987 | US4672405 Multiple quantum well frequency multiplier circuit |
06/09/1987 | US4672404 Ballistic heterojunction bipolar transistor |
06/09/1987 | US4672403 Lateral subsurface zener diode |
06/09/1987 | US4672402 Semiconductor circuit device including an overvoltage protection element |
06/09/1987 | US4672313 Device for checking mobile electrical charges in a MOS integrated circuit |
06/09/1987 | US4672235 Bipolar power transistor |
06/09/1987 | US4671830 Providing a disordering layer |
06/09/1987 | US4670969 Method of making silicon diaphragm pressure sensor |
06/09/1987 | US4670968 Method of implanting uniform concentrations in solids having predetermined angular relationship with the ion-beam |
06/09/1987 | CA1222835A1 Shallow-junction semiconductor devices |
06/04/1987 | WO1987003426A1 Semiconductor device |
06/04/1987 | WO1987003425A1 Transistor having silicide contacts and method for producing same |
06/04/1987 | WO1987003424A1 Semiconductor devices |
06/04/1987 | DE3542570A1 Gate turnoff thyristor having an integrated antiparallel diode |
06/03/1987 | EP0224274A2 Semiconductor device with protective means against overheating |
06/03/1987 | EP0224269A2 Lateral insulated gate transistor with improved latch up immunity |
06/03/1987 | EP0224199A1 Method for producing highly integrated circuits of p- and n-channel MOS transistors with gate electrodes consisting of a double layer of polysilicon and metal silicide |
06/03/1987 | EP0224189A2 Device having strain induced region |
06/03/1987 | EP0224141A2 Improved semiconductor power devices |
06/03/1987 | EP0224091A1 Semiconductor device including protecting MOS transistor |
06/03/1987 | EP0223780A1 Method for producing mos transistors having metal silicide electrodes. |
06/02/1987 | USH291 Fully ion implanted junction field effect transistor |
06/02/1987 | US4670770 Integrated circuit chip-and-substrate assembly |
06/02/1987 | US4670768 Complementary MOS integrated circuits having vertical channel FETs |
06/02/1987 | US4670767 Hetero-junction bipolar transistor having a high switching speed |
06/02/1987 | US4670764 Multi-channel power JFET with buried field shaping regions |
06/02/1987 | US4670763 Thin film field effect transistor |
06/02/1987 | US4670241 P4 gas generator using the alkali metal polyphosphide MP15 |
06/02/1987 | US4669179 Integrated circuit fabrication process for forming a bipolar transistor having extrinsic base regions |
06/02/1987 | US4669178 Process for forming a self-aligned low resistance path in semiconductor devices |
06/02/1987 | US4669177 Complimentary metal oxide semiconductor self-aligned gate |
06/02/1987 | CA1222576A1 Semiconductor device with improved support member |
05/27/1987 | EP0223616A2 Semiconductor memory device and manufacturing method |
05/27/1987 | EP0223294A1 Charge-coupled device |
05/27/1987 | EP0223013A2 Planar 3D epitaxial semiconductor structures and method for making |
05/27/1987 | EP0222908A1 Wafer base for silicon carbide semiconductor device |
05/27/1987 | DE3625742A1 Integrated CMOS circuit and method of producing the circuit |
05/27/1987 | DE3541290A1 Magnetically controllable semiconductor component |
05/26/1987 | US4669100 Charge-coupled device having a buffer electrode |
05/26/1987 | US4668970 Semiconductor device |
05/26/1987 | US4668969 Vertical non-single crystal semiconductor field effect transistor |
05/26/1987 | US4668968 Integrated circuit compatible thin film field effect transistor and method of making same |
05/26/1987 | US4668306 Dioces, tubes, heat treatment, dielectrics, vapor deposition, plasma/gases/, apertures, photolithography |
05/26/1987 | US4667393 Method for the manufacture of semiconductor devices with planar junctions having a variable charge concentration and a very high breakdown voltage |
05/26/1987 | CA1222330A1 Compound semiconductor integrated circuit device |
05/21/1987 | WO1987003142A1 Fill and spill for charge input to a ccd |
05/21/1987 | WO1987003141A1 Semiconductor switch for high inverse voltages |
05/20/1987 | EP0222668A1 Method of producing by stepwise etching a thin-film transistor with a self-aligned gate in regard to source and drain, and transistor so obtained |
05/20/1987 | EP0222506A1 Semiconductor memory |
05/20/1987 | EP0222467A1 A semiconductor resistance element used in a semiconductor integrated circuit |
05/20/1987 | EP0222396A1 Field-effect transistor device |
05/20/1987 | EP0222326A2 Method of fabricating an improved insulated gate semiconductor device |
05/20/1987 | EP0222305A1 Integrated-circuit arrangement for the protection of subscriber lines against overvoltages |
05/20/1987 | EP0222280A2 Thyristor with controlable emitter-base short-circuit |
05/20/1987 | EP0222225A2 Dielectrically isolated integrated circuit device and method of making |
05/20/1987 | EP0222215A2 Polysilicon MOS transistor and method of manufacturing the same |
05/20/1987 | CN85107336A Semiconductor element with two dimentional electronic gas emitter |
05/19/1987 | US4667218 NPN transistor with base double doped with arsenic and boron |
05/19/1987 | US4667217 Two bit vertically/horizontally integrated memory cell |
05/19/1987 | US4667216 Electric resistor consisting of at least two monolithically combined mis-field effect transistors for integrated semiconductor circuits |
05/19/1987 | US4667215 Semiconductor device |
05/19/1987 | US4667213 Charge-coupled device channel structure |
05/19/1987 | US4667211 Millimeter wave-infrared bloch oscillator/detector |
05/19/1987 | US4666569 Method of making multilayer ohmic contact to thin film p-type II-VI semiconductor |
05/19/1987 | US4666557 Method for forming channel stops in vertical semiconductor surfaces |
05/19/1987 | CA1222070A1 Proximity doping of multilayered amorphous semiconductors |
05/19/1987 | CA1222069A1 Semiconductor device |
05/19/1987 | CA1222050A1 Memory system |
05/14/1987 | DE3540250A1 Halbleiterschalter fuer hohe sperrspannungen Semiconductor switches for high blocking voltages |
05/13/1987 | EP0221742A2 Integrated circuit fabrication process for forming a bipolar transistor having extrinsic base regions |
05/13/1987 | EP0221624A1 MOS transistor and method of fabrication |
05/13/1987 | EP0221593A1 Method of manufacturing a semiconductor device using an implantation mask |
05/13/1987 | EP0221394A2 Method of making an integrated circuit structure |
05/13/1987 | EP0221361A1 Liquid-crystal display device |
05/13/1987 | EP0221351A1 Integrated circuit with an electroconductive flat element |
05/12/1987 | US4665525 Means for a self-aligned multilayer laser epitaxy structure device |
05/12/1987 | US4665504 Fast switching |
05/12/1987 | US4665428 Semiconductor device |
05/12/1987 | US4665426 EPROM with ultraviolet radiation transparent silicon nitride passivation layer |
05/12/1987 | US4665424 Intergrated circuits |
05/12/1987 | US4665423 MIS variable resistor |
05/12/1987 | US4665422 Solid state image sensing device |
05/12/1987 | US4665420 Edge passivated charge-coupled device image sensor |
05/12/1987 | US4665418 Semiconductor memory device |
05/12/1987 | US4665417 Non-volatile dynamic random access memory cell |
05/12/1987 | US4665416 Semiconductor device having a protection breakdown diode on a semi-insulative substrate |
05/12/1987 | US4665415 Field-effect transistor |
05/12/1987 | US4665414 Integrated circuits |
05/12/1987 | US4665413 Edge junction schottky diode |