Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/1987
06/09/1987US4672419 Metal gate, interconnect and contact system for VLSI devices
06/09/1987US4672416 Semiconductor device
06/09/1987US4672415 Power thyristor on a substrate
06/09/1987US4672414 Planar heterojunction bipolar device and method
06/09/1987US4672413 Barrier emitter transistor
06/09/1987US4672411 Pressure sensor
06/09/1987US4672410 Semiconductor memory device with trench surrounding each memory cell
06/09/1987US4672409 Nonvolatile semiconductor memory device
06/09/1987US4672408 Non-volatile semiconductor memory device
06/09/1987US4672407 Conductivity modulated MOSFET
06/09/1987US4672406 Semiconductor member and semiconductor device employing the same
06/09/1987US4672405 Multiple quantum well frequency multiplier circuit
06/09/1987US4672404 Ballistic heterojunction bipolar transistor
06/09/1987US4672403 Lateral subsurface zener diode
06/09/1987US4672402 Semiconductor circuit device including an overvoltage protection element
06/09/1987US4672313 Device for checking mobile electrical charges in a MOS integrated circuit
06/09/1987US4672235 Bipolar power transistor
06/09/1987US4671830 Providing a disordering layer
06/09/1987US4670969 Method of making silicon diaphragm pressure sensor
06/09/1987US4670968 Method of implanting uniform concentrations in solids having predetermined angular relationship with the ion-beam
06/09/1987CA1222835A1 Shallow-junction semiconductor devices
06/04/1987WO1987003426A1 Semiconductor device
06/04/1987WO1987003425A1 Transistor having silicide contacts and method for producing same
06/04/1987WO1987003424A1 Semiconductor devices
06/04/1987DE3542570A1 Gate turnoff thyristor having an integrated antiparallel diode
06/03/1987EP0224274A2 Semiconductor device with protective means against overheating
06/03/1987EP0224269A2 Lateral insulated gate transistor with improved latch up immunity
06/03/1987EP0224199A1 Method for producing highly integrated circuits of p- and n-channel MOS transistors with gate electrodes consisting of a double layer of polysilicon and metal silicide
06/03/1987EP0224189A2 Device having strain induced region
06/03/1987EP0224141A2 Improved semiconductor power devices
06/03/1987EP0224091A1 Semiconductor device including protecting MOS transistor
06/03/1987EP0223780A1 Method for producing mos transistors having metal silicide electrodes.
06/02/1987USH291 Fully ion implanted junction field effect transistor
06/02/1987US4670770 Integrated circuit chip-and-substrate assembly
06/02/1987US4670768 Complementary MOS integrated circuits having vertical channel FETs
06/02/1987US4670767 Hetero-junction bipolar transistor having a high switching speed
06/02/1987US4670764 Multi-channel power JFET with buried field shaping regions
06/02/1987US4670763 Thin film field effect transistor
06/02/1987US4670241 P4 gas generator using the alkali metal polyphosphide MP15
06/02/1987US4669179 Integrated circuit fabrication process for forming a bipolar transistor having extrinsic base regions
06/02/1987US4669178 Process for forming a self-aligned low resistance path in semiconductor devices
06/02/1987US4669177 Complimentary metal oxide semiconductor self-aligned gate
06/02/1987CA1222576A1 Semiconductor device with improved support member
05/1987
05/27/1987EP0223616A2 Semiconductor memory device and manufacturing method
05/27/1987EP0223294A1 Charge-coupled device
05/27/1987EP0223013A2 Planar 3D epitaxial semiconductor structures and method for making
05/27/1987EP0222908A1 Wafer base for silicon carbide semiconductor device
05/27/1987DE3625742A1 Integrated CMOS circuit and method of producing the circuit
05/27/1987DE3541290A1 Magnetically controllable semiconductor component
05/26/1987US4669100 Charge-coupled device having a buffer electrode
05/26/1987US4668970 Semiconductor device
05/26/1987US4668969 Vertical non-single crystal semiconductor field effect transistor
05/26/1987US4668968 Integrated circuit compatible thin film field effect transistor and method of making same
05/26/1987US4668306 Dioces, tubes, heat treatment, dielectrics, vapor deposition, plasma/gases/, apertures, photolithography
05/26/1987US4667393 Method for the manufacture of semiconductor devices with planar junctions having a variable charge concentration and a very high breakdown voltage
05/26/1987CA1222330A1 Compound semiconductor integrated circuit device
05/21/1987WO1987003142A1 Fill and spill for charge input to a ccd
05/21/1987WO1987003141A1 Semiconductor switch for high inverse voltages
05/20/1987EP0222668A1 Method of producing by stepwise etching a thin-film transistor with a self-aligned gate in regard to source and drain, and transistor so obtained
05/20/1987EP0222506A1 Semiconductor memory
05/20/1987EP0222467A1 A semiconductor resistance element used in a semiconductor integrated circuit
05/20/1987EP0222396A1 Field-effect transistor device
05/20/1987EP0222326A2 Method of fabricating an improved insulated gate semiconductor device
05/20/1987EP0222305A1 Integrated-circuit arrangement for the protection of subscriber lines against overvoltages
05/20/1987EP0222280A2 Thyristor with controlable emitter-base short-circuit
05/20/1987EP0222225A2 Dielectrically isolated integrated circuit device and method of making
05/20/1987EP0222215A2 Polysilicon MOS transistor and method of manufacturing the same
05/20/1987CN85107336A Semiconductor element with two dimentional electronic gas emitter
05/19/1987US4667218 NPN transistor with base double doped with arsenic and boron
05/19/1987US4667217 Two bit vertically/horizontally integrated memory cell
05/19/1987US4667216 Electric resistor consisting of at least two monolithically combined mis-field effect transistors for integrated semiconductor circuits
05/19/1987US4667215 Semiconductor device
05/19/1987US4667213 Charge-coupled device channel structure
05/19/1987US4667211 Millimeter wave-infrared bloch oscillator/detector
05/19/1987US4666569 Method of making multilayer ohmic contact to thin film p-type II-VI semiconductor
05/19/1987US4666557 Method for forming channel stops in vertical semiconductor surfaces
05/19/1987CA1222070A1 Proximity doping of multilayered amorphous semiconductors
05/19/1987CA1222069A1 Semiconductor device
05/19/1987CA1222050A1 Memory system
05/14/1987DE3540250A1 Halbleiterschalter fuer hohe sperrspannungen Semiconductor switches for high blocking voltages
05/13/1987EP0221742A2 Integrated circuit fabrication process for forming a bipolar transistor having extrinsic base regions
05/13/1987EP0221624A1 MOS transistor and method of fabrication
05/13/1987EP0221593A1 Method of manufacturing a semiconductor device using an implantation mask
05/13/1987EP0221394A2 Method of making an integrated circuit structure
05/13/1987EP0221361A1 Liquid-crystal display device
05/13/1987EP0221351A1 Integrated circuit with an electroconductive flat element
05/12/1987US4665525 Means for a self-aligned multilayer laser epitaxy structure device
05/12/1987US4665504 Fast switching
05/12/1987US4665428 Semiconductor device
05/12/1987US4665426 EPROM with ultraviolet radiation transparent silicon nitride passivation layer
05/12/1987US4665424 Intergrated circuits
05/12/1987US4665423 MIS variable resistor
05/12/1987US4665422 Solid state image sensing device
05/12/1987US4665420 Edge passivated charge-coupled device image sensor
05/12/1987US4665418 Semiconductor memory device
05/12/1987US4665417 Non-volatile dynamic random access memory cell
05/12/1987US4665416 Semiconductor device having a protection breakdown diode on a semi-insulative substrate
05/12/1987US4665415 Field-effect transistor
05/12/1987US4665414 Integrated circuits
05/12/1987US4665413 Edge junction schottky diode