| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/20/1988 | EP0253724A1 A method of simultaneously fabricating bipolar and complementary field effect transistors using a minimal number of masks |
| 01/20/1988 | EP0253538A2 A VLSI self-aligned bipolar transistor |
| 01/20/1988 | EP0253353A2 Composite semiconductor device |
| 01/20/1988 | EP0253201A2 Structure containing hydrogenated amorphous silicon and process |
| 01/20/1988 | EP0253174A1 Resonant tunneling semiconductor devices |
| 01/20/1988 | EP0253105A1 Integrated circuit with improved protective device |
| 01/20/1988 | EP0253059A2 Process for suppressing the rise of the buried layer of a semiconductor device |
| 01/20/1988 | EP0253014A1 Method of manufacturing a monvolatile semiconductor memory apparatus with writing and erasing capability |
| 01/19/1988 | US4720737 Semiconductor device having a protection circuit with lateral bipolar transistor |
| 01/19/1988 | US4720736 Amorphous silicon thin film transistor |
| 01/19/1988 | US4720734 Low loss and high speed diodes |
| 01/19/1988 | US4720670 On chip performance predictor circuit |
| 01/19/1988 | US4720323 Method for manufacturing a semiconductor device |
| 01/19/1988 | US4720309 Saturatable absorbant with very short switching times |
| 01/19/1988 | CA1231599A1 Method for controlling lateral diffusion of silicon in a self-aligned tisi.sub.2 process |
| 01/14/1988 | WO1988000413A1 Transistor arrangement with an output transistor |
| 01/14/1988 | WO1988000398A1 Single quantum well resonant tunneling semiconductor devices |
| 01/14/1988 | WO1988000392A1 Method for fabricating devices in iii-v semiconductor substrates and devices formed thereby |
| 01/14/1988 | DE3719597A1 Metal oxide semiconductor devices having threshold stability and fewer short-circuits between gate electrodes and source electrodes |
| 01/13/1988 | EP0252888A2 Photopolymer multilayer structure for the production of a GaAs self aligning double recess |
| 01/13/1988 | EP0252818A1 Electron transfer diode with periodic ballistic regions |
| 01/13/1988 | EP0252679A2 Semiconductor device having two electrodes with an insulating film between them |
| 01/13/1988 | EP0252300A1 Metal to semiconductor ohmic contacts |
| 01/13/1988 | EP0252236A2 Vertical MOS type semiconductor device |
| 01/13/1988 | EP0252206A2 Method of fabricating semiconductor structure |
| 01/13/1988 | EP0252179A1 Process for producing undercut mask profiles |
| 01/13/1988 | EP0252173A1 Vertical field effect transistor |
| 01/13/1988 | EP0140965B1 Method of making a nonvolatile semiconductor memory device |
| 01/12/1988 | US4719501 Semiconductor device having junction formed from two different hydrogenated polycrystalline silicon layers |
| 01/12/1988 | US4719500 Semiconductor device and a process of producing same |
| 01/12/1988 | US4719499 Semiconductor imaging device |
| 01/12/1988 | US4719496 Repeated velocity overshoot semiconductor device |
| 01/12/1988 | US4719185 Method of making shallow junction complementary vertical bipolar transistor pair |
| 01/12/1988 | US4719184 Process for the fabrication of integrated structures including nonvolatile memory cells with layers of self-aligned silicon and associated transistors |
| 01/12/1988 | US4719155 Epitaxial layer structure grown on graded substrate and method of growing the same |
| 01/12/1988 | US4718593 Method of forming alloyed metal contacts on rough saw-damaged silicon surfaces |
| 01/12/1988 | CA1231466A1 Semiconductor power switch comprising a thyristor |
| 01/07/1988 | EP0252027A2 Electrically alterable, nonvolatile, floating gate type memory device with reduced tunnelling area and fabrication thereof |
| 01/07/1988 | EP0251927A2 Bipolar transistor with polysilicon stringer base contact |
| 01/07/1988 | EP0251828A1 Insulating resin composition and semiconductor device using the same |
| 01/07/1988 | EP0251682A2 Integrated bipolar-MOS device |
| 01/07/1988 | EP0251578A2 Semiconductor structures including quantum well wires and boxes |
| 01/07/1988 | EP0251506A1 Process for producing a double diffused MOS transistor structure |
| 01/07/1988 | EP0251458A2 Process for manufacturing indium-phosphide devices |
| 01/07/1988 | EP0251386A1 Charge transfer device with eliminator of the background level of a detected signal, detector structure and process for using the said device |
| 01/07/1988 | EP0251352A1 Hot charge-carrier transistors |
| 01/07/1988 | EP0250886A2 Semiconductor heterostructure adapted for low temperature operation |
| 01/07/1988 | EP0250721A2 Integrated circuit comprising bipolar and complementary MOS transistors on a common substrate, and production method |
| 01/07/1988 | EP0250479A1 Current metering apparatus. |
| 01/07/1988 | EP0250476A1 Ion-selective field effect transistor and fabrication process |
| 01/07/1988 | EP0197948A4 Charge storage depletion region discharge protection. |
| 01/07/1988 | EP0132720B1 Integrated semiconductor circuit having an external aluminium or aluminium alloy contact interconnection layer |
| 01/05/1988 | USH411 Quasi-accumulation mode FET |
| 01/05/1988 | US4717947 Semiconductor device turned on and off by light |
| 01/05/1988 | US4717944 Semiconductor device having a field effect transistor with improved linearity |
| 01/05/1988 | US4717943 Charge storage structure for nonvolatile memories |
| 01/05/1988 | US4717941 Sidewall multiple-gate IGFET |
| 01/05/1988 | US4717940 MIS controlled gate turn-off thyristor |
| 01/05/1988 | US4717688 Saturated solution of silicon in melted gold gives uniform doping |
| 01/05/1988 | US4717686 Method for the simultaneous manufacture of bipolar and complementary MOS transistors on a common silicon substrate |
| 01/05/1988 | US4717685 Buffer layer of aluminum gallium arsenide |
| 01/05/1988 | US4717684 Semiconductor integrated circuit device |
| 01/05/1988 | US4717681 High level integration |
| 01/05/1988 | US4717679 Minimal mask process for fabricating a lateral insulated gate semiconductor device |
| 01/05/1988 | US4717677 Selective doping using high dose, shalow implantation to form emitter and intrinsic base regions |
| 01/05/1988 | US4717673 Thiophene polymer based transistor, capacitor and electrochromic device |
| 12/30/1987 | CN87102505A Integrated circuit with smooth interface over polysilicon |
| 12/29/1987 | US4716580 Charge transfer analog comparator and devices using such a comparator |
| 12/29/1987 | US4716489 Breakdown protected planar transistor device |
| 12/29/1987 | US4716466 Image sensor |
| 12/29/1987 | US4716451 Semiconductor device with internal gettering region |
| 12/29/1987 | US4716446 Insulated dual gate field effect transistor |
| 12/29/1987 | US4716445 Multilayer-containing gallium arsenide intermetallic |
| 12/29/1987 | US4716314 Integrated circuit |
| 12/29/1987 | US4716128 Method of fabricating silicon-on-insulator like devices |
| 12/29/1987 | US4716126 Fabrication of double diffused metal oxide semiconductor transistor |
| 12/29/1987 | US4715930 Process for producing by sloping etching a thin film transistor with a self-aligned gate with respect to the drain and source thereof |
| 12/29/1987 | CA1230948A1 Thin film field effect transistor and method of making same |
| 12/23/1987 | EP0250161A2 Method of manufacturing devices including a semiconductor/dielectric interface |
| 12/23/1987 | EP0250086A2 Electrical circuit utilizing a concentric collector PNP transistor |
| 12/23/1987 | EP0249777A2 Method of making a metal to higher band gap compound semiconductor and contact obtainable by such a method |
| 12/23/1987 | EP0249768A2 Compound semiconductor interface control |
| 12/23/1987 | EP0077481B1 Planar semiconductor device |
| 12/22/1987 | US4714951 Integrated circuit device which includes a continous layer which consists of conducting portions which are of a silicide of a refractory metal and insulating portions which are of an oxide of the metal |
| 12/22/1987 | US4714948 HEMT with epitaxial narrow bandgap source/drain contacts isolated from wide bandgap layer |
| 12/22/1987 | US4714876 Circuit for initiating test modes |
| 12/22/1987 | US4714842 Integrated injection logic circuits |
| 12/22/1987 | US4714836 Photosensitive pixel with exposed blocking element |
| 12/22/1987 | US4714685 Method of fabricating self-aligned silicon-on-insulator like devices |
| 12/22/1987 | US4714519 Voltage variations |
| 12/17/1987 | WO1987007765A1 Method of making a self-aligned mesfet using a substitutional gate with sidewalls and lift-off |
| 12/17/1987 | WO1987007763A1 Method for fabricating devices using chemical vapour deposition, and devices formed thereby |
| 12/16/1987 | EP0249455A1 Compound semiconductor structure having graded mole fraction and process for preparation thereof |
| 12/16/1987 | EP0249371A2 Semiconductor device including two compound semiconductors, and method of manufacturing such a device |
| 12/16/1987 | EP0249325A1 Integrated circuit with channel length indicator |
| 12/16/1987 | EP0249211A2 Method of manufacturing a thin film transistor |
| 12/16/1987 | EP0249204A2 Thin film field effect transistor |
| 12/16/1987 | EP0249122A1 Turn-off power semiconductor device |
| 12/16/1987 | EP0249088A1 A semiconductor device |
| 12/16/1987 | EP0248883A1 Selective deposition process. |