H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/1986
12/16/1986	CA1215478A1 Schottky power diode
12/16/1986	CA1215476A1 Schottky-barrier mos devices
12/16/1986	CA1215456A1 Method for sputtering a pin amorphous silicon semi- conductor device having partially crystallized p and n-layers
12/10/1986	EP0204498A2 Improved eeprom cell and method of fabrication
12/10/1986	EP0204336A2 MIS FET Semiconductor device with reduced leakage current
12/10/1986	EP0204300A2 A programmable macrocell using EPROM or EEPROM transistors for architecture control in programmable logic circuits
12/10/1986	EP0110952B1 Semiconductor integrated circuit capacitor
12/10/1986	EP0036887B1 Semiconductor devices controlled by depletion regions
12/10/1986	CN85104551A Process for forming isolated silicon regions and field-effect devices on a silicon substrate
12/09/1986	US4628487 Dual slope, feedback controlled, EEPROM programming
12/09/1986	US4628405 Integrated circuit precision capacitor
12/09/1986	US4628341 Integrated circuit structure comprising CMOS transistors having high blocking voltage capability and method of fabrication of said structure
12/09/1986	US4628339 Polycrystalline silicon Schottky diode array
12/09/1986	US4628338 High melting point metal or silicide contactors
12/09/1986	US4628016 Group iii metal and group 5 metal intermetallics
12/09/1986	US4627153 Method of producing a semiconductor memory device
12/09/1986	CA1215181A1 Heterojunction semiconductor device
12/04/1986	WO1986007194A1 Wafer base for silicon carbide semiconductor device
12/04/1986	WO1986007190A1 Method for producing mos transistors having metal silicide electrodes
12/03/1986	EP0203591A2 Method of reinforcing a body of silicon, materials therefor and its use in the thinning of a plate-like body of silicon
12/03/1986	EP0203578A2 Semiconductor device having epitaxial insulating film and method of producing the same
12/03/1986	EP0203516A2 Field effect transistor
12/03/1986	EP0203493A2 Field effect transistor
12/03/1986	EP0203231A1 Transient absorption semiconductor device comprising at least one zenerdiode
12/03/1986	EP0203225A2 MESFET transistor with air layer between the connections of the gate electrode and the substrate and the respective fabrication process
12/03/1986	EP0203146A1 Trench transistor.
12/03/1986	EP0203114A1 Method for manufacturing trench gate mos structures in ics and accordingly fabricated devices
12/02/1986	US4627083 Charge transfer device output
12/02/1986	US4627082 Semiconductor device for obtaining an accurate threshold voltage adjustment
12/02/1986	US4627028 Memory decoder circuit
12/02/1986	US4626888 Gate turn-off thyristor
12/02/1986	US4626887 Static storage cell
12/02/1986	US4626886 Power transistor
12/02/1986	US4626881 Capacitor produced of a layer combination of metal, insulator and semiconductor
12/02/1986	US4626880 Vertical MOS-FET devices having a planar multicell structure
12/02/1986	US4626879 Lateral double-diffused MOS transistor devices suitable for source-follower applications
12/02/1986	US4626703 Thyristor with connectible current sources and method for operating same
12/02/1986	US4626293 Method of making a high voltage DMOS transistor
12/02/1986	US4625561 Silicon capacitive pressure sensor and method of making
12/02/1986	US4625388 Method of fabricating mesa MOSFET using overhang mask and resulting structure
12/02/1986	CA1214885A1 Method for manufacturing vlsi complementary mos field effect circuits
11/1986
11/26/1986	EP0202785A2 Nonvolatile electrically alterable memory
11/26/1986	EP0202755A1 Double heterojunction field effect transistor data storage device
11/26/1986	EP0202727A2 Semiconductor devices
11/26/1986	EP0202704A1 Electrode system for a semiconductor device and method of manufacturing it
11/26/1986	EP0202515A1 Semiconductor memory
11/26/1986	EP0202499A1 Snubber circuit for GTO thyristor
11/26/1986	EP0202477A2 Method of forming an electrical short circuit between adjoining regions in an insulated gate semiconductor device
11/26/1986	EP0202383A1 Semiconductor device using holes as charge carriers
11/26/1986	CN86103467A Silicon wafer reinforcing materials
11/26/1986	CN85104043A Phosphorus and high phosphorus polyphosphide barriers in quantum well devices
11/25/1986	US4625227 Resin molded type semiconductor device having a conductor film
11/25/1986	US4625224 Thin film transistor having polycrystalline silicon layer with 0.01 to 5 atomic % chlorine
11/25/1986	US4624737 Process for producing thin-film transistor
11/25/1986	US4624387 Easy-to-open lid of a container
11/25/1986	US4624047 Fabrication process for a dielectric isolated complementary integrated circuit
11/25/1986	US4624046 Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM
11/25/1986	CA1214575A1 Method of manufacturing gaas semiconductor device
11/25/1986	CA1214573A1 Semiconductor device
11/25/1986	CA1214572A1 Semiconductor device
11/20/1986	EP0202150A1 Non-linear control element for an electro-optical visible flat screen, and method for its manufacture
11/20/1986	EP0202038A1 Bipolar transistor
11/20/1986	EP0201970A1 Charge transfer device provided with inductive elements
11/20/1986	EP0201963A1 Charge-coupled device and method of manufacturing the same
11/20/1986	EP0201945A2 Semiconductor devices employing conductivity modulation
11/20/1986	EP0201873A2 A method of the production of a metal semiconductor field effect transistor and said transistor
11/20/1986	EP0201867A2 Method of manufacturing a bipolar transistor
11/20/1986	EP0201713A1 Method of making a FET gate by angled evaporation
11/20/1986	EP0201686A1 Semiconductor device comprising a superlattice
11/20/1986	EP0118513B1 Process for forming a cmos structure
11/19/1986	CN86101789A Semiconductor devices
11/19/1986	CN86101151A Driving circuit for an insulated gate bipolar transitor
11/19/1986	CN85103742A Thin film field effect transistors utilizing a polypnictide semiconductor
11/19/1986	CN85103376A Dram cell and method
11/18/1986	US4624004 Buried channel MESFET with backside source contact
11/18/1986	US4623912 Nitrided silicon dioxide layers for semiconductor integrated circuits
11/18/1986	US4623910 Semiconductor device
11/18/1986	US4623909 Semiconductor photodetector
11/18/1986	US4623908 Thin film transistors
11/18/1986	US4623427 Means and method for a self-aligned multilayer laser epitaxy structure device
11/18/1986	US4622737 Process for the fabrication of a nonvolatile memory cell with very small thin oxide area and cell
11/18/1986	US4622736 Schottky barrier diodes
11/18/1986	US4622735 Multilayer insulating film, diffusion
11/18/1986	CA1214271A1 Dynamic semiconductor memory cell with random access (dram) and fabrication methods therefor
11/12/1986	EP0201380A2 Low temperature plasma nitridation process and applications of nitride films formed thereby
11/12/1986	EP0201329A2 A field effect transistor
11/12/1986	EP0201111A2 Semiconductor device manufacture using an implantation step
11/12/1986	EP0200933A1 Heterojunction transistor having bipolar characteristics
11/12/1986	EP0200747A1 Folded logic gate
11/12/1986	CN86101884A Semiconductor devices
11/11/1986	US4622656 Non-volatile semiconductor memory
11/11/1986	US4622573 CMOS contacting structure having degeneratively doped regions for the prevention of latch-up
11/11/1986	US4622572 High voltage semiconductor device having an improved DV/DT capability and plasma spreading
11/11/1986	US4622571 CMOS integrated circuit device
11/11/1986	US4622570 Semiconductor memory
11/11/1986	US4622569 Lateral bidirectional power FET with notched multi-channel stacking and with dual gate reference terminal means
11/11/1986	US4622568 Planar field-shaped bidirectional power FET
11/11/1986	US4622567 Semiconductor device
11/11/1986	US4622093 Group 3 and group 5 ions
11/11/1986	US4621415 Method for manufacturing low resistance sub-micron gate Schottky barrier devices

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