Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/1987
11/11/1987EP0244477A1 Fill and spill for charge input to a ccd
11/11/1987CN87100967A Deep-zone pn-junction diode
11/11/1987CN86101937A Resistor-oxide-semiconductor field-effect transistor
11/10/1987US4706102 Memory device with interconnected polysilicon layers and method for making
11/10/1987US4705759 High power MOSFET with low on-resistance and high breakdown voltage
11/10/1987US4705599 Method for fabricating bipolar transistor in integrated circuit
11/10/1987US4705358 Substrate for active matrix display
11/10/1987US4705322 Protection of inductive load switching transistors from inductive surge created overvoltage conditions
11/10/1987US4704786 Method of forming a lateral bipolar transistor in a groove
11/10/1987US4704785 Process for making a buried conductor by fusing two wafers
11/10/1987US4704784 Method of making thin film field effect transistors for a liquid crystal display device
11/10/1987US4704783 Method for passivating the back channel of amorphous silicon field effect transistors
11/05/1987WO1987006768A1 Semiconductor component for protection against overvoltages and overcurrents
11/05/1987WO1987006767A1 Surface mountable diode
11/05/1987WO1987006764A1 Process for manufacturing semiconductor devices
11/04/1987EP0244367A2 Mos type integrated semiconductor device with nonuniform thickness of gate oxide and process for fabricating it
11/04/1987EP0244366A2 Self-aligned process for fabricating small size DMOS cells and MOS devices obtained by means of said process
11/04/1987EP0244304A1 Process for the selective dry-etchung of layers of III-V semiconductor materials, and transistor manufactured by this process
11/04/1987EP0244299A1 P-i-n photodiode realized by using an amorphous semiconductor
11/04/1987EP0244171A1 Bipolar transistor having an implanted extrinsic base region
11/04/1987EP0244140A2 A semiconductor device with periodic structure
11/04/1987EP0244081A1 Method for forming crystal and crystal article obtained by said method
11/04/1987EP0243999A2 Fabrication process for EPROM cells with oxide-nitride-oxide dielectric
11/04/1987EP0243988A1 Method of manufacturing a semiconductor device
11/04/1987EP0243953A2 Compound semiconductor device
11/04/1987EP0243684A1 Turn-off power semiconductor device and method of making the same
11/04/1987EP0243622A2 Shallow junction complementary vertical bipolar transistor pair
11/04/1987EP0243609A1 Complementary semiconductor device structure and its production
11/03/1987USH368 Vertical gradient of electrical resistance
11/03/1987US4704625 Capacitor with reduced voltage variability
11/03/1987US4704623 Doping for low capacitance amorphous silicon field effect transistor
11/03/1987US4704622 Negative transconductance device
11/03/1987US4704302 Oxygen or nitrogen
11/03/1987US4703552 Fabricating a CMOS transistor having low threshold voltages using self-aligned silicide polysilicon gates and silicide interconnect regions
11/03/1987US4703551 Process for forming LDD MOS/CMOS structures
11/03/1987CA1228935A1 Semiconductor device with polycrystalline silicon active region and method of fabrication thereof
10/1987
10/28/1987EP0243070A2 Semiconductor device of III-V compound
10/28/1987EP0243024A2 Metallized semiconductor device including an interface layer
10/28/1987EP0242933A1 Active matrix display without a parasitic transistor and method for its manufacture
10/28/1987EP0242893A1 Method of manufacturing a semiconductor device
10/28/1987EP0242748A1 Bipolar/Mos input circuit for photovoltaic detectors
10/28/1987EP0242746A1 Method of making an integrated circuit
10/28/1987EP0242652A2 Electron tuned quantum well device
10/28/1987EP0242623A2 MOS semiconductor device and method of manufacturing the same
10/28/1987EP0242540A1 Method and structure for reducing resistance in integrated circuits
10/27/1987US4703336 Amorphous semiconductor film containing additive; defect reduction
10/27/1987US4703196 High voltage precharging circuit
10/27/1987US4702797 Forming region of first conductivity type with high concentration of impurity
10/27/1987US4701998 Removal of damaged areas of silicon substrate by forming silicone dioxide; etching
10/27/1987US4701996 Method for fabricating edge channel FET
10/27/1987CA1228681A1 Method for the manufacture of gate electrodes formed of double layers of metal silicides having a high melting point and doped polycrystalline silicon
10/27/1987CA1228680A1 Semiconductor device wiring including tunnelling layer
10/27/1987CA1228679A1 Devices formed utilizing organic materials
10/22/1987DE3710503A1 Semiconductor integrated circuit device
10/21/1987EP0242291A1 Charge transfer shift register provided with a floating diode reading device
10/21/1987EP0241991A2 Field effect transistor having a membrane overlying the gate insulator
10/21/1987EP0241988A2 High mobility semiconductor devices
10/21/1987EP0241948A1 Semiconductor memory and method for fabricating the same
10/21/1987EP0241886A1 Multiplexer cell for photovoltaic detectors
10/21/1987EP0241744A2 Liquid-phase epitaxial process, especially for manufacturing three-dimensional semiconductor structures
10/21/1987EP0241699A2 Semiconductor memory device using junction short type programmable element
10/21/1987EP0241662A2 Turn-off thyristor
10/21/1987CN87102618A 半导体器件 Semiconductor devices
10/20/1987US4701775 Buried n- channel implant for NMOS transistors
10/20/1987US4701572 Amorphous solar cell
10/20/1987US4701422 Method of adjusting threshold voltage subsequent to fabrication of transistor
10/20/1987US4701349 Forming refractory silicide and nitride layers
10/20/1987US4700879 Method for manufacturing semiconductor power modules with an insulated contruction
10/20/1987US4700467 Process for grounding flat devices and integrated circuits
10/20/1987US4700466 Contacting mirror polished surfaces, annealing
10/20/1987US4700464 Method of forming trench isolation in an integrated circuit
10/20/1987US4700462 For use in a semiconductor device
10/20/1987US4700461 Process for making junction field-effect transistors
10/20/1987US4700460 Switching high voltage direct, alternating current sources using a low voltage gate electrode
10/20/1987US4700458 Method of manufacture thin film transistor
10/20/1987US4700455 Doping, etching; self-aligned multiple electrodes
10/20/1987CA1228426A1 Charge transfer device
10/20/1987CA1228424A1 Semiconductor device
10/15/1987DE3711033A1 MOSFET semiconductor device
10/14/1987EP0241084A1 CCD input circuit
10/14/1987EP0241059A2 Method for manufacturing a power mos transistor
10/14/1987EP0240953A2 Compound semiconductor device
10/14/1987EP0240807A1 Circuit arrangement for detecting an excess temperature in semiconductor power devices
10/14/1987EP0240781A2 Method for manufacturing an edge masking of gate electrodes of MOS-transistors having low doped drain connection zones
10/14/1987EP0240690A1 Thyristor having an adjustable base emitter resistor
10/14/1987EP0240683A1 Fabrication of insulated gallium arsenide-gate FET with self-aligned source/drain and submicron channel length
10/14/1987EP0240667A2 Processor
10/14/1987EP0240567A1 Semiconductor device
10/13/1987US4700215 Polycide electrodes for integrated circuits
10/13/1987US4700213 Multi-drain enhancement JFET logic (SITL) with complementary MOSFET load
10/13/1987US4700212 Semiconductor integrated circuit device of high degree of integration
10/13/1987US4699690 Method of producing semiconductor memory device
10/13/1987US4698900 Method of making a non-volatile memory having dielectric filled trenches
10/13/1987US4698899 Field effect transistor
10/13/1987CA1228180A1 Method of making a high performance small area, thin film transistor
10/13/1987CA1228178A1 Cmos integrated circuit technology
10/13/1987CA1228177A1 Integrated semiconductor structure
10/08/1987WO1987006061A1 A process for the manufacture of iii-v semiconductor devices
10/07/1987EP0240436A1 DC voltage multiplier which can be integrated into a semiconductor structure
10/07/1987EP0240435A1 Resistor integrated on a semiconductor substrate
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