| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 03/11/1987 | EP0213919A2 Semiconductor devices and method of manufacturing same by ion implantation |
| 03/11/1987 | EP0213425A2 Complementary integrated circuit with a substrate bias voltage generator and a Schottky diode |
| 03/11/1987 | EP0213352A2 Method of manufacturing a lateral transistor |
| 03/11/1987 | EP0213197A1 A method in the manufacture of integrated circuits. |
| 03/11/1987 | EP0213155A1 Eprom with ultraviolet radiation transparent silicon nitride passivation layer |
| 03/11/1987 | EP0063578B1 Process for forming a polysilicon gate integrated circuit device |
| 03/11/1987 | CN85106895A 半导体器件 Semiconductor devices |
| 03/10/1987 | US4649554 Charge transfer device having a subdivided channel output region |
| 03/10/1987 | US4649520 Single layer polycrystalline floating gate |
| 03/10/1987 | US4649414 PNPN semiconductor switches |
| 03/10/1987 | US4649412 Read only semiconductor memory device with polysilicon drain extensions |
| 03/10/1987 | US4649411 Gallium arsenide bipolar ECL circuit structure |
| 03/10/1987 | US4649410 Radiation controllable thyristor with multiple non-concentric amplified stages |
| 03/10/1987 | US4649408 Charge storage type semiconductor device and method for producing same |
| 03/10/1987 | US4649407 Charge coupled device for transferring electric charge |
| 03/10/1987 | US4649405 Electron ballistic injection and extraction for very high efficiency, high frequency transferred electron devices |
| 03/10/1987 | US4648941 Process for forming two MOS structures with different juxtaposed dielectrics and different dopings |
| 03/10/1987 | US4648909 Semiconductors |
| 03/10/1987 | US4648175 Use of selectively deposited tungsten for contact formation and shunting metallization |
| 03/10/1987 | US4648174 Method of making high breakdown voltage semiconductor device |
| 03/10/1987 | US4648173 Fabrication of stud-defined integrated circuit structure |
| 03/04/1987 | EP0212803A1 Solid-state image sensor |
| 03/04/1987 | EP0212766A2 High speed data acquisition utilizing multiplex charge transfer devices |
| 03/04/1987 | EP0212545A2 Semiconductor memory device having nibble mode function |
| 03/04/1987 | EP0212520A2 Data processing method |
| 03/04/1987 | EP0212477A1 Power transistor device |
| 03/04/1987 | EP0212328A1 Double injection field effect transistor |
| 03/04/1987 | EP0212295A2 Monocrystalline semiconductor superlattice structures |
| 03/04/1987 | EP0212267A1 Improved differential input attenuator circuit |
| 03/04/1987 | EP0212266A2 Selective titanium silicide formation |
| 03/04/1987 | EP0212207A1 Fast switching bipolar transistor structure for integrated circuits, and method of making it |
| 03/04/1987 | EP0212120A1 Field effect phototransistor |
| 03/04/1987 | EP0211972A1 Raised gate efet |
| 03/04/1987 | CN85105982A Silicon controlled rectifier for cutting off gate circuit |
| 03/03/1987 | US4648072 High speed data acquisition utilizing multiplex charge transfer devices |
| 03/03/1987 | US4647958 Bipolar transistor construction |
| 03/03/1987 | US4647954 Low temperature tunneling transistor |
| 03/03/1987 | US4646427 Method of electrically adjusting the zener knee of a lateral polysilicon zener diode |
| 03/03/1987 | US4646426 Method of producing MOS FET type semiconductor device |
| 03/03/1987 | US4646424 Liquid crystal display devices |
| 03/03/1987 | CA1218760A1 Method of fabricating vlsi cmos devices |
| 03/03/1987 | CA1218759A1 Semiconductor overvoltage suppressor with exactly adjustable triggering voltage |
| 02/26/1987 | WO1987001238A1 Fabricating a semiconductor device with buried oxide |
| 02/26/1987 | DE3628309A1 Insulated-gate field-effect transistor |
| 02/26/1987 | DE3628233A1 Integrated circuit and method of producing the circuit |
| 02/25/1987 | EP0211632A2 Self-aligned split gate EPROM |
| 02/25/1987 | EP0211622A1 Mos integrated circuit having a protection circuit which includes divided protection resistors |
| 02/25/1987 | EP0211441A2 Charge coupled device delay line |
| 02/25/1987 | EP0211402A2 Process and structure for thin film transistor matrix addressed liquid crystal displays |
| 02/25/1987 | EP0211401A2 N+ Amorphous silicon thin film transistors for matrix addressed liquid crystal displays |
| 02/25/1987 | EP0211370A2 Deposition and hardening of titanium gate electrode material for use in inverted thin film field effect transistors |
| 02/25/1987 | EP0211367A2 Doping for low capacitance amorphous silicon field effect transistor |
| 02/25/1987 | EP0211353A2 Method for the manufacture of a field effect transistor |
| 02/25/1987 | EP0211174A2 Monolithic temperature compensated voltage-reference diode and method for its manufacture |
| 02/24/1987 | US4646266 Programmable semiconductor structures and methods for using the same |
| 02/24/1987 | US4646122 Semiconductor device with floating remote gate turn-off means |
| 02/24/1987 | US4646121 Thyristor with a self-protection function for breakover turn-on failure |
| 02/24/1987 | US4646119 Charge coupled circuits |
| 02/24/1987 | US4646117 Power semiconductor devices with increased turn-off current ratings and limited current density in peripheral portions |
| 02/24/1987 | US4646115 Semiconductor devices having field-relief regions |
| 02/24/1987 | US4646114 Integrated circuit Zener diode |
| 02/24/1987 | US4645707 Semiconductor devices |
| 02/24/1987 | US4645683 Silicon nitride coating gallium arsenide |
| 02/24/1987 | US4645564 Method of manufacturing semiconductor device with MIS capacitor |
| 02/24/1987 | US4645563 Isotropic deposition, anisotropic etching |
| 02/24/1987 | US4644637 Method of making an insulated-gate semiconductor device with improved shorting region |
| 02/24/1987 | CA1218471A1 Grooved gate field effect transistor |
| 02/24/1987 | CA1218470A1 Semiconductor device with polycrystalline silicon active region and ic including semiconductor device |
| 02/24/1987 | CA1218468A1 Method of screen printing conductive elements |
| 02/18/1987 | CN85105483A Controlled turn-on thyristor |
| 02/17/1987 | US4644572 Fill and spill for charge input to a CCD |
| 02/17/1987 | US4644386 Integrated circuit employing insulated gate electrostatic induction transistor |
| 02/17/1987 | US4644383 Subcollector for oxide and junction isolated IC's |
| 02/17/1987 | US4644381 I2 L heterostructure bipolar transistors and method of making the same |
| 02/17/1987 | US4644378 Semiconductor device for generating electromagnetic radiation |
| 02/17/1987 | US4643817 Photocell device for evolving hydrogen and oxygen from water |
| 02/17/1987 | US4643804 Forming thick dielectric at the bottoms of trenches utilized in integrated-circuit devices |
| 02/17/1987 | US4642883 Semiconductor bipolar integrated circuit device and method for fabrication thereof |
| 02/17/1987 | US4642881 Method of manufacturing nonvolatile semiconductor memory device by forming additional impurity doped region under the floating gate |
| 02/17/1987 | US4642880 Method for manufacturing a recessed semiconductor device |
| 02/17/1987 | US4642879 Forming aluminum nitride layer, doping and heat treatment |
| 02/17/1987 | US4642878 Method of making MOS device by sequentially depositing an oxidizable layer and a masking second layer over gated device regions |
| 02/17/1987 | US4642877 Method for making charge coupled device (CCD)-complementary metal oxide semiconductor (CMOS) devices |
| 02/17/1987 | CA1218151A1 Semiconductor memory |
| 02/12/1987 | WO1987000971A1 Triac desensitized in regard to risks of restriking upon switching to reactive load |
| 02/12/1987 | WO1987000969A1 Three-level interconnection scheme for integrated circuits |
| 02/11/1987 | CN86102476A Method of reducing tube leakage and surface leakage of bi-polar device |
| 02/10/1987 | US4642674 Field effect semiconductor device having improved voltage breakdown characteristics |
| 02/10/1987 | US4642673 Floating gate type EEPROM with a substrate region used for the control gate |
| 02/10/1987 | US4642669 Semiconductor device having a blocking capability in only one direction |
| 02/10/1987 | US4642668 Semiconductor device having improved thermal characteristics |
| 02/10/1987 | US4642667 Integrated circuits |
| 02/10/1987 | US4642666 High power MOSFET with low on-resistance and high breakdown voltage |
| 02/10/1987 | US4642665 Vertically layered MOMOM tunnel device |
| 02/10/1987 | US4642491 Single transistor driver circuit |
| 02/10/1987 | US4642259 Gallium arsenide filed effect transistor |
| 02/10/1987 | US4642144 Transferring electrons, increasing electroconductivity |
| 02/10/1987 | US4641419 Fabricating an integrated circuit device having a vertical pnp transistor |
| 02/10/1987 | US4641416 Method of making an integrated circuit structure with self-aligned oxidation to isolate extrinsic base from emitter |
| 02/04/1987 | EP0210809A1 Nonvolatile electrically alterable memory and method |