| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/24/1988 | EP0256557A2 Semiconductor device having thin film wiring layer and method of forming thin wiring layer |
| 02/24/1988 | EP0256397A1 Semiconductor device having a burried layer |
| 02/24/1988 | EP0256363A1 AlGaAs/GaAs complementary IC structure |
| 02/24/1988 | EP0256360A2 Gated tunnel diode |
| 02/24/1988 | EP0256315A1 Integrated circuit containing bipolar and CMOS transistors on a common substrate, and process for its production |
| 02/24/1988 | EP0256298A2 Process for preparing a vertically differentiated transistor device |
| 02/24/1988 | EP0256085A1 Process for forming cmos structures. |
| 02/24/1988 | EP0256053A1 Matrix of interconnected transistors in thin layers and production method thereof. |
| 02/24/1988 | CN87105600A Pressure contact gto-thyristor rectifier |
| 02/24/1988 | CN86105841A Metal-semiconductor fieldeffect transistor with overhead bypass layer and its manufacturing method |
| 02/24/1988 | CN85107886B Screening method of mosfet by gate-voltage and temp. |
| 02/23/1988 | US4727560 Charge-coupled device with reduced signal distortion |
| 02/23/1988 | US4727408 Semiconductor device with high breakdown voltage vertical transistor and fabricating method therefor |
| 02/23/1988 | US4727405 Protective network |
| 02/23/1988 | US4727404 Field effect transistor of the MESFET type for high frequency applications and method of manufacturing such a transistor |
| 02/23/1988 | US4727403 Double heterojunction semiconductor device with injector |
| 02/23/1988 | US4727221 Semiconductor memory device |
| 02/23/1988 | US4727046 Method of fabricating high performance BiCMOS structures having poly emitters and silicided bases |
| 02/23/1988 | US4727044 Method of making a thin film transistor with laser recrystallized source and drain |
| 02/23/1988 | US4727043 Removal and replacement of doped-through insulation layer |
| 02/23/1988 | US4727038 Method of fabricating semiconductor device |
| 02/23/1988 | US4726850 Electrical contact formed in groove in surface or semiconductor |
| 02/17/1988 | EP0255973A2 Contacts formed in minimum surface area of semiconductor devices |
| 02/17/1988 | EP0255971A2 A semiconductor diode |
| 02/17/1988 | EP0255970A2 A method of manufacturing an insulated gate field effect transistor |
| 02/17/1988 | EP0255968A2 High sheet resistance polycrystalline silicone film for increasing diode breakdown voltage |
| 02/17/1988 | EP0255963A2 Nonvolatile semiconductor memory including means for detecting completion of writing operation |
| 02/17/1988 | EP0255882A2 Npn bipolar transistor with extremely thin emitter/base structure and method for manufacturing the same |
| 02/17/1988 | EP0173733A4 Capacitive device. |
| 02/17/1988 | CN85101390B Semiconductor device with control electrode |
| 02/16/1988 | US4726049 Charge-coupled device input with complementary signal-dependent charge packets |
| 02/16/1988 | US4725983 Nonvolatile semiconductor memory device |
| 02/16/1988 | US4725980 Read only memory circuit |
| 02/16/1988 | US4725877 Minimized interdiffusion without increase in electrical contact resistance |
| 02/16/1988 | US4725874 Semiconductor device having protected edges |
| 02/16/1988 | US4725872 Fast channel single phase buried channel CCD |
| 02/16/1988 | US4725871 Depletion mode short channel IGFET |
| 02/16/1988 | US4725810 Method of making an implanted resistor, and resistor obtained thereby |
| 02/16/1988 | US4725564 Method of manufacturing a semiconductor device, in which a dopant is diffused from its oxide into a semiconductor body |
| 02/16/1988 | US4725560 Silicon oxynitride storage node dielectric |
| 02/16/1988 | CA1232979A1 Method for fabricating semiconductor devices |
| 02/16/1988 | CA1232977A1 Semiconductor device comprising insulated gate field effect transistors |
| 02/16/1988 | CA1232976A1 Field effect transistor with elongated ohmic contacts |
| 02/16/1988 | CA1232974A1 High speed diode |
| 02/11/1988 | WO1988001101A1 Process for the production of bipolar devices |
| 02/10/1988 | EP0255782A2 Insulated gate bipolar-mode field effect transistor |
| 02/10/1988 | EP0255585A2 Schottky diode and ohmic contact metallurgy |
| 02/09/1988 | US4724530 Five transistor CMOS memory cell including diodes |
| 02/09/1988 | US4724475 Semiconductor device |
| 02/09/1988 | US4724471 Electrostatic discharge input protection network |
| 02/09/1988 | US4724470 Image sensor device having separate photosensor and charge storage |
| 02/09/1988 | US4724223 Method of making electrical contacts |
| 02/09/1988 | US4724221 Diffusion of impuritites perpendicular to surface of epitaxial layer |
| 02/09/1988 | US4724220 Masking, photon bombardment |
| 02/09/1988 | US4724218 Method of forming a semiconductor device having several gate levels |
| 02/09/1988 | US4723838 Liquid crystal display device |
| 02/09/1988 | US4723837 Metal-insulating film-metal diode |
| 02/08/1988 | EP0167599A4 Non-linear load element for memory cell. |
| 02/07/1988 | US4803538 Thyristor with adjustable base-to-emitter resistance |
| 02/03/1988 | EP0255489A2 Nonvolatile, semiconductor memory device |
| 02/03/1988 | EP0255416A1 Double channel heterojunction semiconductor device, its use in a field effect transistor, and its use in a negative transductance device |
| 02/03/1988 | EP0255288A2 Resonant tunneling transistor |
| 02/03/1988 | EP0255159A2 Process for making structures including E2PROM nonvolatile memory cells with self-aligned layers of silicon and associated transistors |
| 02/03/1988 | EP0255133A2 MOS field-effect transistor and method of making the same |
| 02/03/1988 | EP0254910A1 Pressure-contacted GTO thyristor |
| 02/03/1988 | EP0083716B1 Process for forming iii-v semiconductor mesfet devices, having self-aligned raised source and drain regions |
| 02/02/1988 | US4723156 EPROM device and a manufacturing method thereof |
| 02/02/1988 | US4723155 Semiconductor device having a programmable fuse element |
| 02/02/1988 | US4722914 Substrate with through-holes for insertion of semiconductor dies |
| 02/02/1988 | US4722910 Partially self-aligned metal contact process |
| 02/02/1988 | US4722909 Integrated circuits; gates of different conductivity on the same substrate |
| 02/02/1988 | US4722908 Fabrication of a bipolar transistor with a polysilicon ribbon |
| 02/02/1988 | US4722907 Method of forming an avalanche semiconductor photo-detector device and a device thus formed |
| 02/02/1988 | US4722130 Method of manufacturing a semiconductor device |
| 02/02/1988 | CA1232370A1 Construction of short-length electrode in semiconductor device |
| 02/02/1988 | CA1232369A1 Semiconductor device having combined bipolar transistor and mosfet |
| 02/02/1988 | CA1232365A1 Dual electron injection structure and process with self-limiting oxidation barrier |
| 01/28/1988 | DE3719535A1 Strahlungsfestes halbleiterschaltungsbauteil Radiation-resistant semiconductor circuit component |
| 01/27/1988 | EP0254691A2 Method and apparatus for testing eprom type semiconductor devices during burn-in |
| 01/27/1988 | EP0254071A2 Amorphous thin film transistor device |
| 01/27/1988 | EP0254035A1 Electrodes for semiconductor devices |
| 01/27/1988 | EP0253860A1 Procedure for manufacturing a piezoresistive resistance element and apparatus applying said procedure, and pick-up manufactured by the procedure, in particular a pressure pick-up or equivalent |
| 01/27/1988 | EP0118511B1 Integrated circuit contact fabrication process |
| 01/26/1988 | US4721991 Semiconductor with connectors of alloy containing iron, silicon and group 4,5, or 6 metal |
| 01/26/1988 | US4721990 MOS type integrated circuit having charging and discharging transistors |
| 01/26/1988 | US4721989 CCD with transfer channel at lower potential than supply channel |
| 01/26/1988 | US4721988 Self-aligned dual-gate igfet assembly |
| 01/26/1988 | US4721986 Bidirectional output semiconductor field effect transistor and method for its maufacture |
| 01/26/1988 | US4721985 Variable capacitance element controllable by a D.C. voltage |
| 01/26/1988 | US4721983 Three terminal tunneling device |
| 01/26/1988 | US4721869 Protection circuit for an insulated gate bipolar transistor utilizing a two-step turn off |
| 01/26/1988 | US4721686 Manufacturing integrated circuits containing P-channel MOS transistors and bipolar transistors utilizing boron and arsenic as dopants |
| 01/26/1988 | US4721684 Method for forming a buried layer and a collector region in a monolithic semiconductor device |
| 01/26/1988 | US4721682 Isolation and substrate connection for a bipolar integrated circuit |
| 01/26/1988 | CA1232084A1 Latchup-preventing cmos device and method for fabricating same |
| 01/26/1988 | CA1231916A1 Sputtered semiconducting films of catenated phosphorus material and devices formed therefrom |
| 01/21/1988 | EP0235248A4 Detector and mixer diode operative at zero bias voltage and fabrication process therefor. |
| 01/21/1988 | DE3623750A1 Gate-turn-off thyristor |
| 01/20/1988 | EP0253741A1 Process for manufacturing an integrated circuit comprising a double-junction field effect transistor and a capacitor |
| 01/20/1988 | EP0253727A1 Liquid crystal display panel with an active matrix using amorphous hydrogenated silicon carbide, and manufacturing method thereof |