| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/15/1987 | CA1226965A1 Cmos circuit having a reduced tendency to latch |
| 09/11/1987 | WO1987005442A1 Semiconductor device and method of fabricating the same |
| 09/11/1987 | WO1987005441A1 Semiconductor device and a method of producing the same |
| 09/11/1987 | WO1987005440A1 Fabrication process for stacked mos devices |
| 09/11/1987 | WO1987005439A1 A low temperature method for forming a gate insulator layer for semiconductor devices |
| 09/09/1987 | EP0236200A1 Semiconductor structure consisting of one or more power transistors together with their command and protection logic |
| 09/09/1987 | EP0236189A1 Monolithic semiconductor structure of a heterojunction bipolar transistor and a laser |
| 09/09/1987 | EP0236169A1 Production method for a display screen provided with an active matrix and drain resistances |
| 09/09/1987 | EP0236089A2 Dynamic random access memory having trench capacitor |
| 09/09/1987 | EP0235819A2 Process for producing single crystal semiconductor layer |
| 09/09/1987 | EP0235785A2 Semiconductor device |
| 09/09/1987 | EP0235706A2 Thyristor having a resistance element coupled to its gate, and method of making the same |
| 09/09/1987 | EP0235705A2 Self-aligned ultra high-frequency field-effect transistor, and method for manufacturing the same |
| 09/09/1987 | EP0235550A1 Semiconductor element and method of making the same |
| 09/09/1987 | EP0235248A1 Detector and mixer diode operative at zero bias voltage and fabrication process therefor. |
| 09/09/1987 | EP0042420B1 Method for fabricating igfet integrated circuits |
| 09/08/1987 | US4692904 Semiconductor integrated circuit device |
| 09/08/1987 | US4692788 Semiconductor device with solder overflow prevention geometry |
| 09/08/1987 | US4692781 Semiconductor device with electrostatic discharge protection |
| 09/08/1987 | US4692780 Junction field effect transistor and method of fabricating |
| 09/08/1987 | US4692558 Counteraction of semiconductor impurity effects |
| 09/08/1987 | US4691435 Method for making Schottky diode having limited area self-aligned guard ring |
| 09/08/1987 | US4691433 Hybrid extended drain concept for reduced hot electron effect |
| 09/08/1987 | CA1226658A1 Fluorinated p-doped microcrystalline semiconductor alloys and method of preparation |
| 09/03/1987 | DE3706274A1 Semiconductor component and method of fabricating it |
| 09/02/1987 | EP0234276A2 Insulated gate type field effect transistor |
| 09/02/1987 | EP0234269A2 High voltage semiconductor integrated circuit |
| 09/02/1987 | EP0234152A2 Field-effect transistor and logic-integrated circuit including such a transistor |
| 09/02/1987 | EP0234054A1 Method of manufacturing a bipolar transistor |
| 09/02/1987 | EP0233862A1 Gate alignment procedure in fabricating semiconductor devices |
| 09/01/1987 | US4691224 Planar semiconductor device with dual conductivity insulating layers over guard rings |
| 09/01/1987 | US4691223 Semiconductor device having high breakdown voltage |
| 09/01/1987 | US4691220 Radial high voltage bidirectional switch structure with concavo-concave shaped semiconductor regions |
| 09/01/1987 | US4691219 Bipolar transistor |
| 09/01/1987 | US4691218 Charge transfer device |
| 09/01/1987 | US4691216 Semiconductor memory device |
| 09/01/1987 | US4691215 Hot electron unipolar transistor with two-dimensional degenerate electron gas base with continuously graded composition compound emitter |
| 09/01/1987 | US4690830 Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices |
| 09/01/1987 | US4690730 Oxide-capped titanium silicide formation |
| 09/01/1987 | US4690714 Method of making active solid state devices |
| 09/01/1987 | US4689872 Masking, oxidizing, anisotropic etching and doping give bipolar and field effect transistors |
| 09/01/1987 | US4689871 Trenching in substrate allows minimization of silicon area in semiconductors |
| 09/01/1987 | US4689869 Fabrication of insulated gate gallium arsenide FET with self-aligned source/drain and submicron channel length |
| 09/01/1987 | CA1226375A1 Semiconductor device and method of producing the same |
| 08/27/1987 | DE3605685A1 Power transistor |
| 08/26/1987 | EP0233823A2 Method for manufacturing a metal insulator semiconductor field effect transistor |
| 08/26/1987 | EP0233791A2 Insulated gate field effect transistor and method of manufacture thereof |
| 08/26/1987 | EP0233725A2 Opto-Electronic Device and Method for its Manufacture |
| 08/26/1987 | CN87100294A Polysilicon self-aligned bipolar device and process of manufacturing same |
| 08/25/1987 | US4689808 Low noise signal detection for a charge transfer device by quadrature phasing of information and reset noise signals |
| 08/25/1987 | US4689655 Semiconductor device having a bipolar transistor with emitter series resistances |
| 08/25/1987 | US4689653 Complementary MOS integrated circuit including lock-up prevention parasitic transistors |
| 08/25/1987 | US4689651 Low voltage clamp |
| 08/25/1987 | US4689648 Magnetically sensitive metal semiconductor devices |
| 08/25/1987 | US4689647 Conductivity modulated field effect switch with optimized anode emitter and anode base impurity concentrations |
| 08/25/1987 | US4689646 Depletion mode two-dimensional electron gas field effect transistor and the method for manufacturing the same |
| 08/25/1987 | US4689116 Process for fabricating electronic circuits based on thin-film transistors and capacitors |
| 08/25/1987 | US4689115 Gaseous etching process |
| 08/25/1987 | US4688896 Information conversion device with auxiliary address lines for enhancing manufacturing yield |
| 08/25/1987 | US4688323 Method for fabricating vertical MOSFETs |
| 08/25/1987 | US4688314 Method of making a planar MOS device in polysilicon |
| 08/25/1987 | CA1226073A1 Semiconductor integrated circuits gettered with phosphorus |
| 08/25/1987 | CA1226072A1 Power semiconductor device with mesa type structure |
| 08/24/1987 | EP0136350A4 Inverted polycide sandwich structure and method. |
| 08/19/1987 | EP0232619A2 Method of manufacturing a thin-film transistor |
| 08/19/1987 | EP0232589A2 Zener diode |
| 08/19/1987 | EP0232510A2 Semiconductor device having a plane junction with autopassivating termination |
| 08/19/1987 | EP0232497A2 Process for simultaneous manufacturing of bipolar and complementary MOS-transistors on a common silicon substrate |
| 08/19/1987 | EP0232431A1 Semiconductor device |
| 08/19/1987 | EP0232361A1 High-performance dram arrays including trench capacitors. |
| 08/19/1987 | EP0232298A1 Triac desensitized in regard to risks of restriking upon switching under reactive load. |
| 08/18/1987 | US4688078 Partially relaxable composite dielectric structure |
| 08/18/1987 | US4688073 Lateral device structures using self-aligned fabrication techniques |
| 08/18/1987 | US4688065 MOS type semiconductor device |
| 08/18/1987 | US4688063 Dynamic ram cell with MOS trench capacitor in CMOS |
| 08/18/1987 | US4688062 Doped galium arsenide buffer layer in transistor |
| 08/18/1987 | US4688061 Mobility-modulation field-effect transistor |
| 08/18/1987 | US4686762 Arsenic, phosphorus, boron doping |
| 08/18/1987 | US4686759 Method of manufacturing a semiconductor device |
| 08/13/1987 | WO1987004860A1 Partially dielectrically isolated semiconductor devices |
| 08/12/1987 | EP0232117A2 Semiconductor variable capacitance element |
| 08/12/1987 | EP0232082A2 Semiconductor deposition method and device |
| 08/12/1987 | EP0231895A2 Gate turn-off thyristor |
| 08/12/1987 | EP0231811A2 Method for manufacturing integrated electronic devices, in particular high voltage P-channel MOS transistors |
| 08/12/1987 | EP0231794A2 Method and apparatus for forming metal silicide/silicon structures |
| 08/12/1987 | EP0231740A2 A polysilicon self-aligned bipolar device and process of manufacturing same |
| 08/12/1987 | EP0231738A2 Thermally stable low resistance contact |
| 08/12/1987 | EP0231703A1 Process for manufacturing an electrical resistance by means of doping a semiconductive material. |
| 08/12/1987 | EP0231700A1 Variable-capacity diode with hyperabrupt profile and planar structure, and method of manufacturing same |
| 08/12/1987 | EP0231660A2 Method for producing an electronic device having a multi-layer structure |
| 08/12/1987 | EP0231656A2 Silicon semiconductor device |
| 08/12/1987 | EP0231507A2 An electrically alterable non-volatile memory device |
| 08/12/1987 | EP0231326A1 Non-volatile semiconductor memories. |
| 08/12/1987 | EP0231305A1 Sensors for selective determination of components in liquid or gaseous phase. |
| 08/12/1987 | EP0231271A1 Three-level interconnection scheme for integrated circuits |
| 08/12/1987 | EP0077825B1 Method of forming wide bandgap region within multilayer semiconductors |
| 08/12/1987 | CN86108693A Thin-film transistor |
| 08/11/1987 | US4686558 CMOS memory cell having an electrically floating storage gate |
| 08/11/1987 | US4686557 Semiconductor element and method for producing the same |
| 08/11/1987 | US4686555 Solid state image sensor |