H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/1987
01/07/1987	EP0207178A1 Bidirectional power fet with field shaping
01/07/1987	EP0207177A1 Bidirectional power fet with shorting-channel off state
01/07/1987	EP0098834B1 Planar semiconductor device
01/06/1987	US4635165 Printed-circuit construction with EPROM IC chip mounted thereon
01/06/1987	US4635122 Image pickup device of the frame transfer type and image pickup arrangement using the same
01/06/1987	US4635089 MIS-integrated semiconductor device
01/06/1987	US4635086 Self turnoff type semiconductor switching device
01/06/1987	US4635085 Semiconductor memory device
01/06/1987	US4635084 Split row power JFET
01/06/1987	US4634891 Gate turn-off thyristor module
01/06/1987	US4634473 Method for fabricating a radiation hardened oxide having structural damage
01/06/1987	CA1216376A1 Memory device
01/06/1987	CA1216374A1 Silicon gigabit metal-oxide-semiconductor device processing
12/1986
12/31/1986	CN85105124A 晶体管 Transistors
12/31/1986	CN85103373A Semiconductor device and fittings
12/30/1986	US4633292 Semiconductor component with planar structure
12/30/1986	US4633291 High-gain semiconductor device with capacitive coupling
12/30/1986	US4633289 Latch-up immune, multiple retrograde well high density CMOS FET
12/30/1986	US4633288 Light-triggerable thyristor having low light power requirement and high critical voltage rise rate
12/30/1986	US4633285 Semiconductor device
12/30/1986	US4633284 Thin film transistor having an annealed gate oxide and method of making same
12/30/1986	US4633282 Metal-semiconductor field-effect transistor with a partial p-type drain
12/30/1986	US4633281 Dual stack power JFET with buried field shaping depletion regions
12/30/1986	US4633279 Semiconductor devices
12/30/1986	US4633278 Horizontally layered MOMOM notch tunnel device
12/30/1986	US4633101 Semiconductor sample and hold switching circuit
12/30/1986	US4633099 Feedback circuit for a semiconductor active element sensor
12/30/1986	US4632886 Sodium sulfide in ethylene glycol electrolyte
12/30/1986	US4632884 Cutting off corner
12/30/1986	US4632725 Method for interconnecting the active zones and/or the gates of a C/MOS integrated circuit
12/30/1986	US4632713 Process of making Schottky barrier devices formed by diffusion before contacting
12/30/1986	US4632710 Vapor phase epitaxial growth of carbon doped layers of Group III-V materials
12/30/1986	EP0206938A2 Germanosilicate spin-on glasses
12/30/1986	EP0206929A1 Method of producing an integrated circuit and in particular an EPROM memory with two distinct electrically isolated components
12/30/1986	EP0206918A1 Avalanche semiconductor photodetector and method for its production
12/30/1986	EP0206787A2 Heterojunction bipolar transistor and method of manufacturing same
12/30/1986	EP0206350A2 Thyristor with a reduced base thickness
12/30/1986	EP0206274A1 High transconductance complementary IC structure
12/30/1986	EP0206136A2 Semiconductor device manufacturing method
12/30/1986	EP0205728A2 Arrangement of input-output pins of an integrated circuit package
12/30/1986	EP0205641A1 High density, high voltage FET
12/30/1986	EP0205640A1 Lateral bidirectional shielded notch fet
12/30/1986	EP0205639A1 Bidirectional power fet with substrate referenced shield
12/30/1986	EP0205638A1 Bidirectional power fet with integral avalanche protection
12/30/1986	EP0205637A1 Trapped charge bidirectional power fet
12/30/1986	EP0205636A1 Planar field-shaped bidirectional power fet
12/30/1986	EP0205635A1 Bidirectional power fet with bipolar on-state
12/30/1986	EP0205565A1 A microwave transferred electron device.
12/30/1986	EP0108065B1 Method for manufacturing semi-conducting devices and semi-conducting devices thus obtained
12/30/1986	EP0075588B1 Process for fabricating a self-aligned buried channel and the product thereof
12/30/1986	CA1216078A1 Semiconductor hot electron transistor and method for operating same
12/30/1986	CA1216077A1 Semiconductor hot electron transistor and method for operating same
12/30/1986	CA1216076A1 Method for the manufacture of bipolar transistor structures with self-adjusting emitter and base regions for extreme high frequency circuits
12/30/1986	CA1216075A1 Wafer fabrication by implanting through protective layer
12/24/1986	CN85104640A Charge-coupled semiconductor device with dynamic control
12/23/1986	US4631686 Semiconductor integrated circuit device
12/23/1986	US4631568 Bipolar transistor construction
12/23/1986	US4631567 Semiconductor device for receiving an input signal
12/23/1986	US4631565 MISFET with input amplifier
12/23/1986	US4631564 Gate shield structure for power MOS device
12/23/1986	US4631563 Metal oxide semiconductor field-effect transistor with metal source region
12/23/1986	US4631561 Semiconductor overvoltage suppressor with accurately determined striking potential
12/23/1986	US4631560 MOMS tunnel emission transistor
12/23/1986	US4631234 Doping, semiconductors
12/23/1986	US4631113 Selective etching
12/23/1986	CA1215787A1 Buried schottky clamped transistor
12/23/1986	CA1215521A1 Catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them
12/18/1986	WO1986007491A1 Process for forming contacts and interconnects for integrated circuits
12/18/1986	WO1986006540A3 Memory cell for use in a read only memory
12/17/1986	EP0205221A1 Charge-coupled device
12/17/1986	EP0205217A2 Semiconductor devices
12/17/1986	EP0205203A1 Charge-coupled device
12/17/1986	EP0205164A2 Semiconductor device structure
12/17/1986	EP0205008A2 Integrated semiconductor structure and fabrication method
12/17/1986	EP0204979A1 Method of simultaneously producing bipolar and complementary MOS transistors as a common silicon substrate
12/17/1986	EP0204752A1 Process for forming diffusion regions in a semiconductor substrate.
12/17/1986	EP0200863A1 Semiconductor device with structures of thyristors and diodes
12/17/1986	CN86102691A Semiconductor device and method of producing same
12/16/1986	US4630237 Read-only memory and method of manufacturing the same
12/16/1986	US4630164 Protective circuit for complementary field-effect transistors
12/16/1986	US4630096 High density IC module assembly
12/16/1986	US4630093 Wafer of semiconductors
12/16/1986	US4630092 Insulated gate-controlled thyristor
12/16/1986	US4630090 Mercury cadmium telluride infrared focal plane devices having step insulator and process for making same
12/16/1986	US4630089 Semiconductor memory device
12/16/1986	US4630088 MOS dynamic ram
12/16/1986	US4630087 Nonvolatile semiconductor memory device
12/16/1986	US4630086 Multilayer-semiconductor body, insulation film, floating and control gate electrode for metal oxide-nitride-semiconductor
12/16/1986	US4630085 Erasable, programmable read-only memory device
12/16/1986	US4630084 Vertical mis-field effect transistor with low forward resistance
12/16/1986	US4630082 Semiconductor device with multi-electrode construction equivalent to variable capacitance diode
12/16/1986	US4629957 Sensing apparatus
12/16/1986	US4629880 Gate bias generating circuit for field effect transistors
12/16/1986	US4629520 Heat treatment diffusion
12/16/1986	US4629519 Contacting with saturated solution of magnesium compound
12/16/1986	US4629514 Method of producing II-V compound semiconductors
12/16/1986	US4628589 Method for fabricating stacked CMOS structures
12/16/1986	US4628588 Molybdenum-metal mask for definition and etch of oxide-encapsulated metal gate
12/16/1986	CA1215480A1 Method of manufacturing a high-voltage bipolar transistor
12/16/1986	CA1215479A1 Methods of manufacturing semiconductor devices

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