| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/14/1987 | CA1224279A1 Semiconductor device |
| 07/14/1987 | CA1224278A1 Integrated circuit chip assembly |
| 07/14/1987 | CA1224262A1 Manufacture of an imaging screen based on thin film transistors and on capacitors |
| 07/08/1987 | EP0228316A1 Method of producing a thin-film transistor, and transistor so manufactured |
| 07/08/1987 | EP0228295A2 Method for producing an electronic device having a multi-layer structure |
| 07/08/1987 | EP0228206A2 Method of making an integrated circuit structure having gate electrode and underlying oxide |
| 07/08/1987 | EP0228107A2 Fast switching lateral insulated gate transistors |
| 07/08/1987 | EP0227971A1 MOS transistor with a short gate for highly integrated circuits, and method for its production |
| 07/08/1987 | EP0227970A1 Method of simultaneous fabrication of self-aligned bipolar transistors and complementary MOS transistors on a common silicon substrate |
| 07/08/1987 | EP0227894A2 High density vertical DMOS transistor |
| 07/08/1987 | EP0227692A1 Thin layer consisting essentially of ruthenium salt. |
| 07/07/1987 | US4679062 Semiconductor |
| 07/07/1987 | US4678932 Snubber circuit for GTO thyristor |
| 07/07/1987 | US4677739 Semiconductors |
| 07/07/1987 | US4677737 Integrated circuits |
| 07/07/1987 | US4677736 Self-aligned inlay transistor with or without source and drain self-aligned metallization extensions |
| 07/07/1987 | CA1223975A1 Process for making a semiconductor device |
| 07/07/1987 | CA1223800A1 Method of fabricating integrated circuit structures using replica patterning |
| 07/02/1987 | DE3643994A1 Voltage multiplier circuit |
| 07/01/1987 | EP0227549A2 Semiconductor memory device including read only memory element for storing fixed information |
| 07/01/1987 | EP0227373A2 Process for fabricating a semiconductor structure |
| 07/01/1987 | EP0227189A2 Method of manufacturing a thin conductor device |
| 07/01/1987 | EP0227149A1 Current-sensing circuit for a power semiconductor device, in particular an integrated intelligent power semiconductor switch specifically for applications in motor vehicles |
| 07/01/1987 | EP0227085A2 A method of manufacturing IGFETs having minimal junction depth using epitaxial recrystallization |
| 07/01/1987 | EP0226892A2 Process for manufacturing of bipolar and complementary MOS-transistors on a common silicon substrate |
| 07/01/1987 | EP0226890A1 Method for the fabrication of self-aligned bipolar transistor structures with reduced base resistance |
| 07/01/1987 | EP0226772A2 Method of manufacturing semiconductor substrates |
| 07/01/1987 | CN86108046A Vertical inverter circuit |
| 07/01/1987 | CN86107851A Charge-coupled device |
| 06/30/1987 | US4677650 Charge coupled semiconductor device with dynamic control |
| 06/30/1987 | US4677457 Semiconductor device with bidimensional charge carrier gas |
| 06/30/1987 | US4677456 Semiconductor structure and manufacturing method |
| 06/30/1987 | US4677454 Thyristor with self-centering housing means |
| 06/30/1987 | US4677453 Solid state image sensor |
| 06/30/1987 | US4677452 Power field-effect transistor structures |
| 06/30/1987 | US4677451 Vertical channel field effect transistor |
| 06/30/1987 | US4677380 Magnetic field sensor comprising two component layer transistor of opposite polarities |
| 06/30/1987 | US4677369 CMOS temperature insensitive voltage reference |
| 06/30/1987 | US4677314 Buffer circuit having a P-channel output mosfet with an open drain terminal connected to an external load |
| 06/30/1987 | US4676847 Controlled boron doping of silicon |
| 06/30/1987 | US4675984 Method of exposing only the top surface of a mesa |
| 06/30/1987 | US4675983 Method of making a semiconductor including forming graft/extrinsic and intrinsic base regions |
| 06/30/1987 | US4675981 Method of making implanted device regions in a semiconductor using a master mask member |
| 06/30/1987 | US4675980 Method for making vertically layered MOMOM tunnel device |
| 06/30/1987 | US4675978 Method for fabricating a radiation hardened oxide having two portions |
| 06/30/1987 | CA1223673A1 Mode selection layer for semiconductor device |
| 06/25/1987 | DE3545239A1 Patterned semiconductor body |
| 06/24/1987 | EP0226549A1 A monolithic integrated circuit, particularly of either the MOS or CMOS type, and method of manufacturing same |
| 06/24/1987 | EP0226469A1 A semiconductor integrated circuit device |
| 06/24/1987 | EP0226383A2 Resonant-tunneling transistor |
| 06/24/1987 | EP0226293A2 Method for producing a buried contact Schottky logic array, and device produced thereby |
| 06/24/1987 | EP0226148A2 Current limited insulated gate device |
| 06/24/1987 | EP0226106A2 Method of fabricating semiconductor device having low resistance non-alloyed contact layer |
| 06/24/1987 | EP0226021A1 Thyristor with switchable emitter shorting |
| 06/24/1987 | EP0225962A2 Insulated gate transistor with latching inhibited |
| 06/24/1987 | EP0225920A1 Process for forming contacts and interconnects for integrated circuits. |
| 06/24/1987 | EP0051669B1 Semiconductor fabrication utilizing laser radiation |
| 06/23/1987 | US4675719 Thyristor device |
| 06/23/1987 | US4675715 Semiconductor integrated circuit vertical geometry impedance element |
| 06/23/1987 | US4675714 Gapless gate charge coupled device |
| 06/23/1987 | US4675713 Metal silicide source regfion, low minority carrier injection , improved switching speed |
| 06/23/1987 | US4675712 Transistors |
| 06/23/1987 | US4675711 Low temperature tunneling transistor |
| 06/23/1987 | US4675709 Quantized layered structures with adjusted indirect bandgap transitions |
| 06/23/1987 | US4675708 Semiconductor superlattice structure |
| 06/23/1987 | US4675643 Pressure transducer utilizing a transduction element |
| 06/23/1987 | US4674177 Multilayer dielectric substrate, doped semiconductor, then sc hottky metal layer with contactors |
| 06/23/1987 | US4674173 Method for fabricating bipolar transistor |
| 06/18/1987 | WO1987003742A1 Mesfet device having a semiconductor surface barrier layer |
| 06/18/1987 | WO1987003741A1 Selective deposition process |
| 06/18/1987 | WO1987003687A1 Ion-selective field effect transistor and fabrication process |
| 06/18/1987 | WO1987001859A3 Nonvolatile memory cell |
| 06/16/1987 | US4673968 Integrated MOS transistors having a gate metallization composed of tantalum or niobium or their silicides |
| 06/16/1987 | US4673965 Uses for buried contacts in integrated circuits |
| 06/16/1987 | US4673963 High well capacity CCD imager |
| 06/16/1987 | US4673961 Pressurized contact type double gate static induction thyristor |
| 06/16/1987 | US4673959 Heterojunction FET with doubly-doped channel |
| 06/16/1987 | US4673958 Monolithic microwave diodes |
| 06/16/1987 | US4673957 Integrated circuit compatible thin film field effect transistor and method of making same |
| 06/16/1987 | US4673593 Zinc penetrates semiconductor and forming alloy layer |
| 06/16/1987 | US4672853 Apparatus and method for a pressure-sensitive device |
| 06/16/1987 | US4672738 Method for the manufacture of a pn junction with high breakdown voltage |
| 06/16/1987 | EP0225821A2 Semiconductor device having a silicon on insulator structure |
| 06/16/1987 | EP0225716A2 Non-saturated current semiconductor device having two current paths |
| 06/16/1987 | EP0225672A1 High-frequency transistor and method of manufacturing same |
| 06/16/1987 | EP0225586A1 An overvoltage protection circuit for an integrated MOS device |
| 06/16/1987 | EP0225566A2 Permeable gate transistor |
| 06/16/1987 | EP0225426A2 A method of fabricating a MOS transistor on a substrate |
| 06/16/1987 | CA1223088A1 Semiconductor device comprising a field effect transistor |
| 06/16/1987 | CA1223086A1 Ion-implantation process for forming ic wafer with buried-zener diode and ic structure made with such process |
| 06/16/1987 | CA1223084A1 Method for the simultaneous manufacture of fast short channel and voltage-stable mos transistors in vlsi circuits |
| 06/10/1987 | EP0225001A2 Heterostructure semiconductor diodes |
| 06/10/1987 | EP0224968A2 Dielectric passivation |
| 06/10/1987 | EP0224757A1 Reversely conducting thyristor |
| 06/10/1987 | EP0224682A2 Method for fabricating a bipolar transistor |
| 06/10/1987 | EP0224614A1 Process of fabricating a fully self- aligned field effect transistor |
| 06/09/1987 | US4672645 Charge transfer device having an improved read-out portion |
| 06/09/1987 | US4672586 Semiconductor memory having circuit effecting refresh on variable cycles |
| 06/09/1987 | US4672584 CMOS integrated circuit |
| 06/09/1987 | US4672423 Voltage controlled resonant transmission semiconductor device |