| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/26/1988 | US4740482 Method of manufacturing bipolar transistor |
| 04/26/1988 | US4740479 Method for the manufacture of cross-couplings between n-channel and p-channel CMOS field effect transistors of static write-read memories |
| 04/26/1988 | US4740478 Integrated circuit method using double implant doping |
| 04/26/1988 | US4740477 Mesa structure, concave doping profile |
| 04/26/1988 | CA1235824A1 Vlsi mosfet circuits using refractory metal and/or refractory metal silicide |
| 04/21/1988 | WO1988002927A2 T-gate electrode for field effect transistor and field effect transistor made therewith |
| 04/21/1988 | WO1988002872A1 Electro-optical display screen with control transistors and method for making such screen |
| 04/21/1988 | DE3634982A1 Power MOSFET and production process |
| 04/20/1988 | EP0264309A1 Self-aligned base shunt for transistor |
| 04/20/1988 | EP0264283A2 Method of fabricating a complementary MOS integrated circuit device |
| 04/20/1988 | EP0264242A2 MOS semiconductor device |
| 04/20/1988 | EP0264222A2 Selective intermixing of layered structures composed of thin solid films |
| 04/20/1988 | CN87106903A Angular surface making process on edge of semiconductor circular chip |
| 04/20/1988 | CN87106894A Selective intermixing of layered structures composed on thin solid films |
| 04/19/1988 | US4739438 Integrated circuit with an improved input protective device |
| 04/19/1988 | US4739389 High-frequency circuit arrangement and semiconductor device for use in such an arrangement |
| 04/19/1988 | US4739387 Amplifying gate thyristor having high gate sensitivity and high dv/dt rating |
| 04/19/1988 | US4739386 Bipolar transistor having improved switching time |
| 04/19/1988 | US4739381 Piezoresistive strain sensing device |
| 04/19/1988 | US4739379 Heterojunction bipolar integrated circuit |
| 04/19/1988 | US4738937 Epitaxial growth of layers directly on each other; semiconductors; matching lattices |
| 04/19/1988 | US4738936 Method of fabrication lateral FET structure having a substrate to source contact |
| 04/19/1988 | US4738935 Annealing polished compound substrate surfaces to bond |
| 04/19/1988 | US4738934 Method of making indium phosphide devices |
| 04/19/1988 | US4738933 Anode and cathode mesas with contacts in same plane for automatic bonding |
| 04/19/1988 | US4738749 Process for producing an active matrix display screen with gate resistance |
| 04/19/1988 | US4738683 Etching to form openings in silicon dioxide layer |
| 04/19/1988 | US4738624 Bipolar transistor structure with self-aligned device and isolation and fabrication process therefor |
| 04/14/1988 | DE3733100A1 Gate turn-off thyristor |
| 04/14/1988 | DE3732418A1 Semiconductor component having a semiconductor region in which a band (energy) gap is continuously stepped |
| 04/13/1988 | EP0263756A2 Selective epitaxy BiCMOS process |
| 04/13/1988 | EP0263755A1 Process for manufacturing a P+NN+ diode and a bipolar transistor including this diode, using the neutralization effect of atomic hydrogen on donor atoms |
| 04/13/1988 | EP0263711A2 Manufacturing method for thin-film semiconductor diode device |
| 04/13/1988 | EP0263504A2 Method for manufacturing high-breakdown voltage semiconductor device |
| 04/13/1988 | EP0263343A2 Power transistor with self-protection against direct secondary breakdown |
| 04/13/1988 | EP0263341A2 An improved process for preparing a charge coupled device with charge transfer direction biasing implants |
| 04/13/1988 | EP0263270A2 Process for providing a P-doped semiconducting region in an N-conductivity semiconducting body |
| 04/13/1988 | CN87106746A 半导体元件 Semiconductor device |
| 04/12/1988 | US4737838 Capacitor built-in semiconductor integrated circuit and process of fabrication thereof |
| 04/12/1988 | US4737837 Ring topology for an integrated circuit logic cell |
| 04/12/1988 | US4737835 Read only memory semiconductor device |
| 04/12/1988 | US4737834 Thyristor with controllable emitter short-circuit paths inserted in the emitter |
| 04/12/1988 | US4737831 Semiconductor device with self-aligned gate structure and manufacturing process thereof |
| 04/12/1988 | US4737829 Dynamic random access memory device having a plurality of one-transistor type memory cells |
| 04/12/1988 | US4737828 Method for gate electrode fabrication and symmetrical and non-symmetrical self-aligned inlay transistors made therefrom |
| 04/12/1988 | US4737827 Heterojunction-gate field-effect transistor enabling easy control of threshold voltage |
| 04/12/1988 | US4737474 Depositing amorphous silicon and silicide layers and sintering |
| 04/12/1988 | US4737472 Process for the simultaneous production of self-aligned bipolar transistors and complementary MOS transistors on a common silicon substrate |
| 04/12/1988 | US4737471 Method for fabricating an insulated-gate FET having a narrow channel width |
| 04/12/1988 | US4737469 Controlled mode field effect transistors and method therefore |
| 04/12/1988 | CA1235233A1 L fast-fabrication process for high speed bipolar analog large scale integrated circuits |
| 04/12/1988 | CA1235219A1 Ccd imager |
| 04/07/1988 | WO1988002555A1 Semi-conductor element with a p-region on the anode side and a weakly-doped adjacent n-base region |
| 04/07/1988 | WO1988002554A1 High-frequency power transistor with bipolar epitaxial technology |
| 04/06/1988 | EP0262958A2 Thyristor drive system |
| 04/06/1988 | EP0262853A1 Semiconductor device and method of making the same |
| 04/06/1988 | EP0262830A2 Method of ensuring contact in a deposited layer |
| 04/06/1988 | EP0262723A2 Process for the formation of a monolithic high voltage semiconductor device |
| 04/06/1988 | EP0262610A2 Two-dimensional electron gas switching device |
| 04/06/1988 | EP0262530A1 Semiconductor components having a power MOSFET and control circuit |
| 04/06/1988 | EP0262485A1 Semiconductor device comprising an etched groove |
| 04/06/1988 | EP0262370A2 Semiconductor device comprising a MOS transistor, and method of making the same |
| 04/06/1988 | EP0262356A2 Process for manufacturing a high-voltage resistant PN junction |
| 04/06/1988 | EP0262346A1 IMPATT diode |
| 04/06/1988 | CN87106738A Semiconductor device and method of making the same |
| 04/06/1988 | CN87102729A Method for silicon planar power transistor dies manufacturing |
| 04/05/1988 | US4736342 Method of forming a field plate in a high voltage array |
| 04/05/1988 | US4736271 Protection device utilizing one or more subsurface diodes and associated method of manufacture |
| 04/05/1988 | US4736235 Ultra-high frequency diode structure whose external connections are provided by two metal beam leads |
| 04/05/1988 | US4736233 Interconnect and contact system for metal-gate MOS VLSI devices |
| 04/05/1988 | US4736232 Thyristor with integrated power supply for an associated circuit and method for manufacture thereof |
| 04/05/1988 | US4736229 Method of manufacturing flat panel backplanes, display transistors and displays made thereby |
| 04/05/1988 | US4735918 High power, high frequency |
| 04/05/1988 | US4735916 Method of fabricating bipolar transistors and insulated gate field effect transistors having doped polycrystalline silicon conductors |
| 04/05/1988 | US4735914 FET for high reverse bias voltage and geometrical design for low on resistance |
| 04/05/1988 | US4735912 Process of fabricating a semiconductor IC device |
| 04/05/1988 | US4735911 Large scale integrated circuits; high switching speeds |
| 04/05/1988 | US4735824 Method of manufacturing an MOS capacitor |
| 04/05/1988 | US4735822 Method for producing an electronic device having a multi-layer structure |
| 04/05/1988 | US4735702 Method of producing an ISFET and same ISFET |
| 04/05/1988 | US4735680 Slot configuration |
| 04/05/1988 | CA1234925A1 Impedance programmable semiconductor structures |
| 04/05/1988 | CA1234917A1 Input structure for charge coupled devices with controllable input bias |
| 03/31/1988 | DE3633223A1 Buried semiconductor resistor |
| 03/31/1988 | DE3632944A1 High-frequency power transistor |
| 03/30/1988 | EP0262030A1 Method of producing an electrical contact on a pHgCdTe substrate, and its use in producing an N/P diode |
| 03/30/1988 | EP0261972A2 Integrated, microminiature electric-to-fluidic valve and pressure/flow regulator and method of making same |
| 03/30/1988 | EP0261939A2 Circuit protection device |
| 03/30/1988 | EP0261938A2 Circuit protection device |
| 03/30/1988 | EP0261937A2 Circuit protection device |
| 03/30/1988 | EP0261666A1 Complementary type insulated gate field effect transistor |
| 03/30/1988 | EP0261631A2 Integrated light-triggered and light-quenched static induction thyristor and making method thereof |
| 03/30/1988 | EP0261208A1 Ambient sensing transcucer devices with isolation |
| 03/30/1988 | EP0138978B1 Method of manufacturing a semiconductor device having small dimensions |
| 03/30/1988 | EP0116643B1 Process for forming an integrated circuit capacitor |
| 03/29/1988 | US4734887 Erasable programmable read only memory (EPROM) device and a process to fabricate thereof |
| 03/29/1988 | US4734755 Alternating load stable switchable semiconductor device |
| 03/29/1988 | US4734752 Electrostatic discharge protection device for CMOS integrated circuit outputs |
| 03/29/1988 | US4734750 High electron mobility heterojunction semiconductor devices |
| 03/29/1988 | US4734749 Semiconductor mesa contact with low parasitic capacitance and resistance |