Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/1987
10/07/1987EP0240307A2 Bipolar transistor and method of producing the same
10/07/1987EP0240273A2 Programmable transistors
10/07/1987EP0239980A2 Electric-electronic device including polyimide thin film
10/07/1987EP0239978A2 Charge transfer device
10/07/1987EP0239977A2 Charge transfer device
10/07/1987EP0239960A2 Power transistor device
10/07/1987EP0239958A2 Thin film semiconductor device and method of manufacturing the same
10/07/1987EP0239866A1 Disconnectible semiconductor device, and its use
10/07/1987EP0239825A1 Method for producing a bipolar transistor structure for very high speed switchings
10/07/1987EP0239703A1 Force-sensitive flow sensor
10/07/1987EP0239652A1 Method of producing a monolithic integrated circuit with at least one bipolar planar transistor
10/06/1987US4698787 Single transistor electrically programmable memory device and method
10/06/1987US4698720 Dynamic protection integrated device, in particular for MOS input stages integrated circuits
10/06/1987US4698659 Stacked complementary metal oxide semiconductor inverter
10/06/1987US4698656 Output detector of a charge coupled device
10/06/1987US4698655 Overvoltage and overtemperature protection circuit
10/06/1987US4698654 Field effect transistor with a submicron vertical structure and its production process
10/06/1987US4698653 Semiconductor devices controlled by depletion regions
10/06/1987US4698652 FET with Fermi level pinning between channel and heavily doped semiconductor gate
10/06/1987US4698627 Programmable semiconductor switch for a light influencing display and method for making same
10/06/1987US4698127 Process for fabricating a self-aligned bipolar transistor
10/06/1987US4698126 Anisotropic etching with chlorine gas and tetrachloromethane
10/06/1987US4697333 Ion penetration prevention;
10/06/1987US4697331 Method of fabrication of a control transistor for a flat-panel display screen
10/06/1987US4697330 High specific capacitance, high integrity
10/06/1987US4697328 Elimination of gate electrode overlap; size reduction
10/01/1987DE3708651A1 Turn-off thyristor and method of fabricating it
09/1987
09/30/1987EP0239368A2 Field-effect transistor
09/30/1987EP0239250A2 Short channel MOS transistor
09/30/1987EP0239217A2 Method of forming doped wells in integrated circuits and its use in the production of a bipolar transistor in such circuits
09/30/1987EP0239216A2 CMOS compatible bipolar transistor
09/30/1987EP0239151A1 Charge-coupled device
09/30/1987EP0239060A2 Method for manufacturing semiconductor integrated circuits including cmos and high-voltage electronic devices
09/30/1987EP0239019A2 Field-effect transistor devices
09/30/1987EP0238749A2 Groove gate unipolar and bipolar MOS devices and method of manufacturing the same
09/30/1987EP0238671A1 Semiconductor device
09/30/1987EP0238665A1 Semiconductor device
09/29/1987US4697252 Dynamic type semiconductor memory device
09/29/1987US4697202 High speed semiconductors
09/29/1987US4697201 Power MOS FET with decreased resistance in the conducting state
09/29/1987US4697199 Semiconductor protection device having a bipolar transistor and an auxiliary field effect transistor
09/29/1987US4697198 MOSFET which reduces the short-channel effect
09/29/1987US4697197 Transistor having a superlattice
09/29/1987US4697154 Semiconductor integrated circuit having improved load drive characteristics
09/29/1987US4696097 Poly-sidewall contact semiconductor device method
09/29/1987US4696094 Ionic implantation of sulfur isotope
09/29/1987US4696093 Vacuum depositing chromium silicides; transistors
09/29/1987US4696092 Method of making field-plate isolated CMOS devices
09/29/1987CA1227581A1 Semiconductor structure with resistive field shield
09/29/1987CA1227580A1 High voltage thin film transistor
09/29/1987CA1227572A1 Charge pump system for non-volatile ram
09/24/1987WO1987005747A1 Ambient sensing transcucer devices with isolation
09/23/1987EP0238406A2 Heterojunction semiconductor device
09/23/1987EP0238362A2 Mask-surrogate semiconductor process employing dopant-opaque region
09/23/1987EP0237933A2 Semiconductor device having Darlington-connected transistor circuit
09/23/1987EP0237932A2 Wiring layout for bipolar and unipolar insulated gate transistors
09/23/1987EP0237844A1 Process for manufacturing a passivation layer for the semiconductor technique, and use of this layer
09/23/1987EP0237826A2 Method of making a self-aligned metallic contact
09/23/1987CN87101951A Semiconductor device for charge-coupled device
09/22/1987US4695979 Modified four transistor EEPROM cell
09/22/1987US4695869 GAAS semiconductor device
09/22/1987US4695867 Monolithically integrated planar semiconductor arrangement
09/22/1987US4695866 Semiconductor integrated circuit device
09/22/1987US4695865 Integrated logic circuit having insulated gate field effect transistors
09/22/1987US4695864 Dynamic storage device with extended information holding time
09/22/1987US4695863 Gateless protection thyristor with a thick, heavily doped central N-layer
09/22/1987US4695862 Semiconductor apparatus
09/22/1987US4695857 Superlattice semiconductor having high carrier density
09/22/1987US4695479 Metal oxide semiconductor field effect transistor
09/22/1987US4695328 Forming dielectric on semiconductor, masking etching to form protrusions, then doping
09/22/1987US4694564 Source, drain, and active zone on semiconductor substrate
09/22/1987US4694563 Process for making Schottky-barrier gate FET
09/22/1987US4694561 Method of making high-performance trench capacitors for DRAM cells
09/16/1987EP0237346A1 Process for forming contact regions in an integrated-circuit substrate
09/16/1987EP0237342A1 Charge-coupled device
09/16/1987EP0237277A2 Gas sensitive device
09/16/1987EP0237029A2 A heterojunction field effect device operable at a high output current with a high withstand voltage
09/16/1987EP0237017A2 Electric-electronic device including polyimide thin film
09/16/1987EP0236953A2 Method of manufacturing semiconductor crystalline layer
09/16/1987EP0236811A2 Method of manufacturing semiconductor device
09/16/1987EP0236737A2 Process for making ultrathin polyheteroaromatic films
09/16/1987EP0236696A2 Non-volatile electronic memory
09/16/1987EP0236676A2 Erasable programmable read only memory using floating gate field effect transistors
09/16/1987EP0236632A2 Formation of diffused buried layers
09/16/1987EP0236352A1 Multi-cell transistor.
09/16/1987EP0144401B1 Process for fabricating complementary and nonvolatile type devices on a common substrate
09/16/1987EP0065671B1 Thyristor having an auxiliary emitter electrode and shorted regions, and process for its operation
09/15/1987US4694476 Buried channel charge coupled device
09/15/1987US4694319 Thyristor having a controllable gate trigger current
09/15/1987US4694316 Imaging system
09/15/1987US4694314 Semiconductor device
09/15/1987US4694313 Insulated gate field effect transistor
09/15/1987US4693925 Improved step coverage
09/15/1987US4693759 Method of forming a thin semiconductor film
09/15/1987US4693758 Method of making devices in silicon, on insulator regrown by laser beam
09/15/1987US4692998 Controlled spacing of etched channels
09/15/1987US4692996 Method of fabricating semiconductor devices in dielectrically isolated silicon islands
09/15/1987US4692993 Schottky barrier charge coupled device (CCD) manufacture
09/15/1987US4692991 Method of controlling forward voltage across Schottky diode
09/15/1987CA1226968A1 Power semiconductor with buried grid structure
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