| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 04/08/1987 | EP0217171A2 Field-effect transistor having a barrier layer |
| 04/08/1987 | EP0217095A2 Method of producing low-ohmic, transparent indium-tin oxide layers, especially for imagers |
| 04/08/1987 | EP0217072A1 Semiconductor device |
| 04/08/1987 | EP0217065A1 Integrated circuit of the complementary technique having a substrate bias generator |
| 04/08/1987 | EP0216945A1 Method of applying a contact to a contact area for a semiconductor substrate |
| 04/08/1987 | EP0216937A1 Ic card. |
| 04/08/1987 | CN86103793A Semiconductor devices |
| 04/07/1987 | US4656611 Logic circuit |
| 04/07/1987 | US4656609 Semiconductor memory device |
| 04/07/1987 | US4656607 Electrically erasable programmable RAM |
| 04/07/1987 | US4656519 Back-illuminated CCD imagers of interline transfer type |
| 04/07/1987 | US4656498 Oxide-isolated integrated Schottky logic |
| 04/07/1987 | US4656496 Power transistor emitter ballasting |
| 04/07/1987 | US4656493 Bidirectional, high-speed power MOSFET devices with deep level recombination centers in base region |
| 04/07/1987 | US4656492 Insulated gate field effect transistor |
| 04/07/1987 | US4656491 Protection circuit utilizing distributed transistors and resistors |
| 04/07/1987 | US4656076 Self-aligned recessed gate process |
| 04/07/1987 | US4656054 Masking, etching |
| 04/07/1987 | US4654960 Method for fabricating GaAs bipolar integrated circuit devices |
| 04/07/1987 | US4654959 Method for the manufacture of thin film transistors |
| 04/07/1987 | US4654958 Process for forming isolated silicon regions and field-effect devices on a silicon substrate |
| 04/02/1987 | DE3632217A1 Semiconductor component and method of producing the component |
| 04/01/1987 | EP0216673A1 Method for producing a control transistor for a flat viewing screen, and control element manufactured thereby |
| 04/01/1987 | EP0216435A2 Bipolar integrated circuit having an improved isolation and substrate connection, and method of preparing the same |
| 04/01/1987 | EP0216380A2 Semiconductor device with a field plate electrode structure |
| 04/01/1987 | EP0216246A1 Semiconductor programmable memory device |
| 04/01/1987 | EP0216155A2 Three-terminal tunnelling device |
| 04/01/1987 | EP0216053A2 Removable sidewall spaces for lightly doped drain formation using one mask level |
| 04/01/1987 | EP0216052A2 Removable sidewall spacer for lightly doped drain formation using two mask levels |
| 04/01/1987 | EP0031837B1 Merged field effect transistor circuit and fabrication process |
| 03/31/1987 | US4654865 CCD device with electrostatic protective means |
| 03/31/1987 | US4654828 Nonvolatile semiconductor memory |
| 03/31/1987 | US4654825 E2 prom memory cell |
| 03/31/1987 | US4654816 Output compensation for charge transfer devices |
| 03/31/1987 | US4654691 Semiconductor device with field plate |
| 03/31/1987 | US4654688 Semiconductor device having a transistor with increased current amplification factor |
| 03/31/1987 | US4654687 High frequency bipolar transistor structures |
| 03/31/1987 | US4654684 Magnetically sensitive transistors utilizing Lorentz field potential modultion of carrier injection |
| 03/31/1987 | US4654680 Sidewall gate IGFET |
| 03/31/1987 | US4654679 Static induction thyristor with stepped-doping gate region |
| 03/31/1987 | US4654621 Semiconductor strain measuring apparatus |
| 03/31/1987 | US4654609 Monolithic planar doped barrier limiter |
| 03/31/1987 | US4654543 Thyristor with "on" protective circuit and darlington output stage |
| 03/31/1987 | US4654295 Method of making short channel thin film field effect transistor |
| 03/31/1987 | US4654121 Fabrication process for aligned and stacked CMOS devices |
| 03/31/1987 | US4653173 Semiconductors |
| 03/26/1987 | WO1987001868A1 Monolithically-integrated semiconductor devices |
| 03/26/1987 | WO1987001867A1 Multi-cell transistor |
| 03/26/1987 | WO1987001866A1 Semiconductor device |
| 03/26/1987 | WO1987001859A2 Nonvolatile memory cell |
| 03/26/1987 | DE3631641A1 Semiconductor diode having a p-n junction and little or no diffusion voltage |
| 03/25/1987 | EP0215546A2 Chemical-sensitive semiconductor device |
| 03/25/1987 | EP0215493A1 Protected MOS transistor circuit |
| 03/25/1987 | EP0215489A2 A shorted anode type gate turn-off thyristor and a process of manufacturing thyristors of this type |
| 03/25/1987 | EP0215213A1 Method of fabricating high voltage and low voltage transistors using an epitaxial layer of uniform thickness |
| 03/25/1987 | EP0215064A1 Floating gate nonvolatile field effect memory device |
| 03/24/1987 | US4652902 Power semiconductor device |
| 03/24/1987 | US4652900 NPN transistor with P/N closed loop in contact with collector electrode |
| 03/24/1987 | US4652897 Semiconductor memory device |
| 03/24/1987 | US4652896 Modulation doped GaAs/AlGaAs field effect transistor |
| 03/24/1987 | US4652895 Zener structures with connections to buried layer |
| 03/24/1987 | US4651411 Method of manufacturing a MOS device wherein an insulating film is deposited in a field region |
| 03/24/1987 | US4651410 Method of fabricating regions of a bipolar microwave integratable transistor |
| 03/24/1987 | US4651408 Fabrication of stacked MOS devices utilizing lateral seeding and a plurality of separate implants at different energies |
| 03/24/1987 | US4651407 Method of fabricating a junction field effect transistor utilizing epitaxial overgrowth and vertical junction formation |
| 03/24/1987 | US4651406 Forming memory transistors with varying gate oxide thicknesses |
| 03/24/1987 | CA1219687A1 Method and structure for inhibiting dopant out- diffusion |
| 03/24/1987 | CA1219683A1 Method for fabricating improved oxide defined transistors and resulting structures |
| 03/19/1987 | DE3533032A1 Thin-film field-effect transistor and a method for its fabrication |
| 03/18/1987 | EP0214802A2 Semiconductor device having an abrupt junction and method of manufacturing same using epitaxy |
| 03/18/1987 | EP0214610A2 Epitaxial gallium arsenide semiconductor wafer and method of producing the same |
| 03/18/1987 | EP0214485A2 Asymmetric thyristor and method of making the same |
| 03/18/1987 | CN86105085A Method to make electric contact in the contact zone of semiconductor substrate |
| 03/17/1987 | US4651189 Semiconductor device provided with electrically floating control electrode |
| 03/17/1987 | US4651188 Semiconductor device with specifically oriented control layer |
| 03/17/1987 | US4651187 Avalanche photodiode |
| 03/17/1987 | US4651186 Field effect transistor with improved withstand voltage characteristic |
| 03/17/1987 | US4651185 Method of manufacturing thin film transistors and transistors made thereby |
| 03/17/1987 | US4651182 Insulated-gate field effect transistor and method of fabricating the same |
| 03/17/1987 | US4651181 Field effect transistors having parallel-connected subtransistors |
| 03/17/1987 | US4651179 Low resistance gallium arsenide field effect transistor |
| 03/17/1987 | US4651015 Semiconductor imaging device utilizing static induction transistors |
| 03/17/1987 | US4650561 Gas sensor |
| 03/17/1987 | US4650544 Sublithographic dimensions, integrated circuits |
| 03/17/1987 | US4650543 Multilayer, bonding strength, reactive etching, ion milling |
| 03/17/1987 | US4649638 Construction of short-length electrode in semiconductor device |
| 03/17/1987 | US4649629 Method of late programming a read only memory |
| 03/17/1987 | US4649627 Method of fabricating silicon-on-insulator transistors with a shared element |
| 03/17/1987 | CA1219382A1 Power semiconductor device with main current section and emulation current section |
| 03/17/1987 | CA1219381A1 Junction-mos power field effect transistor |
| 03/17/1987 | CA1219379A1 Fabrication process- for a dielectric isolated complementary ic |
| 03/17/1987 | CA1219337A1 Reduced-noise ccd camera with single-sampled output |
| 03/12/1987 | WO1987001522A1 Semiconductor device |
| 03/12/1987 | WO1987001511A1 Non-volatile semiconductor memories |
| 03/12/1987 | WO1987001507A1 Gate alignment procedure in fabricating semiconductor devices |
| 03/12/1987 | EP0183722A4 High density ic module assembly. |
| 03/11/1987 | EP0214047A2 Field effect transistor |
| 03/11/1987 | EP0214027A1 Sensitive thyristor with an integrated gate-cathode decoupling |
| 03/11/1987 | EP0213983A2 Method of late programming a read only memory |
| 03/11/1987 | EP0213972A1 Method for shifting the threshold voltage of DMOS transistors |