| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 10/08/1986 | EP0196474A2 Semiconductor device made of compound semiconductor material |
| 10/08/1986 | EP0196374A1 Semiconductor embedded layer technology |
| 10/07/1986 | US4616340 Non-volatile semiconductor memory |
| 10/07/1986 | US4616249 Solid state image pick-up element of static induction transistor type |
| 10/07/1986 | US4616245 Direct-write silicon nitride EEPROM cell |
| 10/07/1986 | US4616243 Gate protection for a MOSFET |
| 10/07/1986 | US4616242 Enhancement and depletion mode selection layer for field effect transistor |
| 10/07/1986 | US4616241 Superlattice optical device |
| 10/07/1986 | US4615298 Method of making non-crystalline semiconductor layer |
| 10/07/1986 | US4615102 Method of producing enhancement mode and depletion mode FETs |
| 10/07/1986 | CA1212485A1 Integrated semiconductor circuits with bipolar components and method of producing same |
| 10/01/1986 | EP0196245A1 Compound semiconductor layer having high carrier concentration and method of forming same |
| 10/01/1986 | EP0196122A1 Bipolar semiconductor devices with implanted recombination region and their manufacture |
| 10/01/1986 | EP0196087A2 Schottky-gate field effect transistor and method for its production |
| 10/01/1986 | EP0195902A2 Dual electron injection structure and process with self-limiting oxidation barrier |
| 10/01/1986 | EP0195867A2 Method of manufacturing a semiconductor device including an implantation step |
| 09/30/1986 | US4614962 Controlled electronic switching device for the suppression of transients |
| 09/30/1986 | US4614959 Improved high voltage MOS transistor with field plate layers for preventing reverse field plate effect |
| 09/25/1986 | WO1986005613A1 Ic card |
| 09/24/1986 | EP0195696A1 Method of making two MOS structures with different contiguously placed dielectrics and different doping concentrations, and charge transfer matrix made by this method |
| 09/24/1986 | EP0195633A2 Semiconductor integrated circuit having load drive characteristics |
| 09/24/1986 | EP0195607A2 Semiconductor device |
| 09/24/1986 | EP0195477A2 Method of manufacturing a semiconductor device, in which a double layer - consisting of poly Si and a silicide - present on a layer of silicon oxide is etched in a plasma |
| 09/24/1986 | EP0195232A2 Piezoresistive strain sensing device |
| 09/24/1986 | EP0099897B1 Darlington transistor circuit |
| 09/24/1986 | CN85108372A High density cmos integrated circuit manufacturing process |
| 09/23/1986 | US4613956 Floating gate memory with improved dielectric |
| 09/23/1986 | US4613895 Color responsive imaging device employing wavelength dependent semiconductor optical absorption |
| 09/23/1986 | US4613890 Alloyed contact for n-conducting GaAlAs-semi-conductor material |
| 09/23/1986 | US4613887 Semiconductor device with a means for discharging carriers |
| 09/23/1986 | US4613884 Light controlled triac with lateral thyristor firing complementary main thyristor section |
| 09/23/1986 | US4613883 Dynamic semiconductor memory cell and method for its manufacture |
| 09/23/1986 | US4613882 Metal oxide semiconductor field effect transistor |
| 09/23/1986 | US4613881 Vertical semiconductor photoelectric transducer with improved separated gate structure |
| 09/23/1986 | US4613809 Quiescent current reduction in low dropout voltage regulators |
| 09/23/1986 | US4613766 Thyristor having controllable emitter short circuits |
| 09/23/1986 | US4613541 Electronic device using electron transport proteins |
| 09/23/1986 | US4613402 Charge coupled devices |
| 09/23/1986 | US4613382 Method of forming passivated polycrystalline semiconductors |
| 09/23/1986 | US4613381 Dopes, semiconductors |
| 09/23/1986 | CA1211866A1 Semiconductor device with annular region comprising a shallow portion |
| 09/23/1986 | CA1211865A1 Method for manufacturing vlsi complementary mos-field effect transistor circuits |
| 09/23/1986 | CA1211863A1 Mirror wafer of compound semiconductor |
| 09/17/1986 | EP0194950A2 High temperature interconnect system for an integrated circuit |
| 09/17/1986 | EP0194946A2 Pressurized contact type double gate static induction thyristor |
| 09/17/1986 | EP0194936A1 Protective thyristor without a gate electrode |
| 09/17/1986 | EP0194832A2 Improved bipolar transistor construction |
| 09/17/1986 | EP0194569A1 Thin-film layer structure with a reactive intermediate layer for integrated circuits |
| 09/17/1986 | EP0194265A1 Infrared optoelectronic component. |
| 09/17/1986 | CN86101209A Semiconductor devices |
| 09/16/1986 | US4612580 TDM-input electrometer, as in a line transfer CCD imager, using a charge funnel |
| 09/16/1986 | US4612566 Microwave transistor mounting structure |
| 09/16/1986 | US4612565 Semiconductor memory device |
| 09/16/1986 | US4612562 PNPN switch device with capacitor formed outside active device areas |
| 09/16/1986 | US4612560 Field effect transistor operating in the enhancement mode |
| 09/16/1986 | US4612521 Charge-coupled transversal filter |
| 09/16/1986 | US4612465 Lateral bidirectional notch FET with gates at non-common potentials |
| 09/16/1986 | US4612449 Thyristor having a secondary emitter electrode and a method for operating the same |
| 09/16/1986 | US4612258 Method for thermally oxidizing polycide substrates in a dry oxygen environment and semiconductor circuit structures produced thereby |
| 09/16/1986 | US4612212 Method for manufacturing E2 PROM |
| 09/16/1986 | US4612207 Apparatus and process for the fabrication of large area thin film multilayers |
| 09/16/1986 | US4611388 Method of forming an indium phosphide-boron phosphide heterojunction bipolar transistor |
| 09/16/1986 | US4611387 Process for producing NPN type lateral transistors |
| 09/16/1986 | US4611386 Method of producing a semiconductor device |
| 09/16/1986 | US4611385 3,4,9,10-perylene tetracarboxylic dianhydride semiconductors |
| 09/16/1986 | US4611384 Method of making junction field effect transistor of static induction type |
| 09/16/1986 | CA1211562A1 Recrystallized silicon-on-insulator nonvolatile memory device |
| 09/12/1986 | WO1986005323A1 Floating gate nonvolatile field effect memory device |
| 09/12/1986 | WO1986005321A1 A method in the manufacture of integrated circuits |
| 09/10/1986 | EP0194199A2 Double gate static induction thyristor and method for manufacturing the same |
| 09/10/1986 | EP0194197A1 Heterojunction bipolar transistor and process for fabricating same |
| 09/10/1986 | EP0194193A1 Method of producing an integrated circuit of MOS transisitors with metal silicide electrodes |
| 09/10/1986 | EP0194134A2 Semiconductor integrated circuit device |
| 09/10/1986 | EP0194091A2 A programmable logic device with limited sense currents |
| 09/10/1986 | EP0194061A2 Improvements in semiconductor structures and devices |
| 09/10/1986 | EP0193992A2 Method of manufacturing an insulated gate field effect device |
| 09/10/1986 | EP0193934A2 Semiconductor integreated circuit device and method of manufacturing the same |
| 09/10/1986 | EP0193842A2 Integrated semiconductor circuit with two epitaxial layers of different conductivity types |
| 09/10/1986 | EP0193841A2 Semiconductor device and method of manufacturing the same |
| 09/10/1986 | CN86100522A Two-pole transister |
| 09/10/1986 | CN85202616U Passive silicon-controlled trigger with four ends |
| 09/09/1986 | US4611308 Drain triggered N-channel non-volatile memory |
| 09/09/1986 | US4611237 Semiconductor integrated circuit device |
| 09/09/1986 | US4611235 Thyristor with turn-off FET |
| 09/09/1986 | US4611221 Solid state image pick-up device |
| 09/09/1986 | US4611220 Junction-MOS power field effect transistor |
| 09/09/1986 | US4611128 Triac having a multilayer semiconductor body |
| 09/09/1986 | US4610731 Shallow impurity neutralization |
| 09/09/1986 | US4610078 Method of making high density dielectric isolated gate MOS transistor |
| 09/09/1986 | CA1211230A1 Speed/power scaling for mos circuit |
| 09/03/1986 | EP0193462A1 High frequency PIN-type diode with abrupt junctions |
| 09/03/1986 | EP0193331A2 Process for forming a doped polysilicon pattern |
| 09/03/1986 | EP0193251A1 Encapsulated chemoresponsive microelectronic device arrays |
| 09/03/1986 | EP0193172A2 Vertical MOS transistor with peripheral circuit |
| 09/03/1986 | EP0193117A2 Method of manufacturing semiconductor device |
| 09/03/1986 | EP0192989A2 Integrated circuit with a semiconductor capacitor and process for its production |
| 09/03/1986 | EP0192646A1 Diffusion barrier layer for integrated-circuit devices. |
| 09/03/1986 | EP0053113B1 Control circuitry using two branch circuits for high-voltage solid-state switches |
| 09/02/1986 | USH134 Buried junction enhanced Schottky barrier device |
| 09/02/1986 | US4609933 Gate turn-off thyristor having P+ gate and emitter |