Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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03/29/1988 | US4734383 Fabricating semiconductor devices to prevent alloy spiking |
03/29/1988 | US4734382 Bipolar complementary metal oxide semiconductor |
03/29/1988 | US4733482 EEPROM with metal doped insulator |
03/24/1988 | WO1988002186A1 Output circuit for image sensor |
03/24/1988 | WO1988002174A2 Nonvolatile memory cell array |
03/24/1988 | WO1988002172A2 Non-volatile memory with floating grid and without thick oxide |
03/24/1988 | WO1988002123A1 Integrated circuits |
03/24/1988 | WO1988001829A2 Monocrystalline three-dimensional integrated circuit |
03/24/1988 | DE3631136A1 Diode with soft snap-off behaviour |
03/23/1988 | EP0260824A2 Circuit for a photosensitive pixel with exposed blocking element |
03/23/1988 | EP0260473A1 Method of forming silicon oxynitride films on silicon substrates |
03/23/1988 | EP0260471A1 Power semiconductor device |
03/23/1988 | CN86102476B Method of reducing tube leakage and surface leakage of bi-polar device |
03/22/1988 | US4733407 Charge-coupled device |
03/22/1988 | US4733287 Integrated circuit structure with active elements of bipolar transistor formed in slots |
03/22/1988 | US4733285 Semiconductor device with input and/or output protective circuit |
03/22/1988 | US4733284 Semiconductor devices and laminates including phosphorus doped transparent conductive film |
03/22/1988 | US4733283 GaAs semiconductor device |
03/22/1988 | US4733282 One-dimensional quantum pipeline type carrier path semiconductor devices |
03/22/1988 | US4733195 Travelling-wave microwave device |
03/22/1988 | US4732872 Method for making a bipolar transistor and capacitors using doped polycrystalline silicon or metal silicide |
03/22/1988 | US4732871 Process for producing undercut dummy gate mask profiles for MESFETs |
03/22/1988 | US4732870 Epitaxial forming channel, buffer, and control layers and electrode |
03/22/1988 | US4732868 Method of manufacture of a uniphase CCD |
03/22/1988 | US4732866 Doping then rapid activation |
03/22/1988 | US4732659 Sputtering method for making thin film field effect transistor utilizing a polypnictide semiconductor |
03/17/1988 | DE3727386A1 CCD register with minimum grid spacing |
03/17/1988 | DE3631371A1 Three-dimensional semiconductor memory cell and method of fabricating said memory cell |
03/17/1988 | DE3630284A1 Method of producing a field-effect transistor |
03/17/1988 | DE3630282A1 Semiconductor device |
03/17/1988 | DE3629680A1 Heterostructure field-effect transistor |
03/16/1988 | EP0260125A2 Electrostatic discharge protection circuit |
03/16/1988 | EP0260061A2 MOS-gated transistor |
03/16/1988 | EP0260060A1 Self-aligned bipolar fabrication process |
03/16/1988 | EP0260058A1 Self-aligned bipolar fabrication process |
03/16/1988 | EP0260052A2 Semiconductor device including ordered layers |
03/16/1988 | EP0259490A1 A method of producing a semiconductor device |
03/15/1988 | US4731696 Three plate integrated circuit capacitor |
03/15/1988 | US4731642 Semiconductor memory device with means to prevent word line breakage |
03/15/1988 | US4731342 Microminiature |
03/15/1988 | US4731341 Method of fabricating bipolar semiconductor integrated circuit device |
03/15/1988 | US4731340 Dual lift-off self aligning process for making heterojunction bipolar transistors |
03/15/1988 | US4731338 Method for selective intermixing of layered structures composed of thin solid films |
03/15/1988 | US4731318 Integrated circuit comprising MOS transistors having electrodes of metallic silicide and a method of fabrication of said circuit |
03/15/1988 | CA1234227A1 High performance, small area thin film transistor |
03/15/1988 | CA1234226A1 Integrated circuit chip processing techniques and integrated circuit chip produced thereby |
03/15/1988 | CA1234225A1 Low capacitance transistor cell element and transistor array |
03/10/1988 | WO1988001792A1 Superlattice for a semiconductor device |
03/10/1988 | DE3728524A1 Hochgeschwindigkeits-halbleiterbauteil und verfahren zu seiner herstellung High-speed semiconductor device and process for its preparation |
03/09/1988 | EP0259282A2 A method for producing thin conductive and semi-conductive layers in monocrystal silicon |
03/09/1988 | EP0259207A1 Current source with an active load and method for its realization |
03/09/1988 | EP0259158A2 Semiconductor non-volatile random access memory |
03/09/1988 | EP0258951A2 Process for manufacturing a REFET or a CHEMFET, and the manufactured REFET or CHEMFET |
03/09/1988 | EP0258657A1 Varactor-transistor device for dynamic semiconductor memory |
03/09/1988 | EP0258285A1 Methods for fabricating transistors and mos transistors fabricated by such methods |
03/09/1988 | EP0258271A1 Partially dielectrically isolated semiconductor devices |
03/09/1988 | EP0159994B1 Multi-gate field effect transistor |
03/08/1988 | US4730228 Overtemperature detection of power semiconductor components |
03/08/1988 | US4730208 Semiconductor device |
03/08/1988 | US4730127 Method of matching currents from split collector lateral pnp transistors |
03/08/1988 | US4729967 Static induction, gallium arsenide |
03/08/1988 | US4729966 Multilayer, channels, cloop shaped electrodes |
03/08/1988 | US4729965 Bipolar transistor, high density packing |
03/08/1988 | CA1233913A1 Low-leakage jfet |
03/03/1988 | DE3728849A1 MIS (metal-insulator-semiconductor) device and method for producing same |
03/02/1988 | EP0258149A2 Low dose emitter vertical fuse |
03/02/1988 | EP0258147A2 Fabrication of a bipolar transistor with a polysilicon ribbon |
03/02/1988 | EP0258141A1 MIS integrated circuit such as an EPROM memory cell, and method of making the same |
03/02/1988 | EP0258075A1 Static MOS RAM and its memorizing method |
03/02/1988 | EP0258070A2 A current source with a process selectable temperature coefficient |
03/02/1988 | EP0257948A2 Conductive via plug for CMOS devices |
03/02/1988 | EP0257875A2 Vertical enhancement-mode group III-V compound misfets |
03/02/1988 | EP0257774A1 Protection circuit for large-scale integrated circuit |
03/02/1988 | EP0257347A2 Semiconductor device equipped with a trench capacitor for preventing circuit misoperation |
03/02/1988 | EP0257328A1 Method of producing pn junctions |
03/02/1988 | EP0257300A1 Field effect transistor |
03/02/1988 | CN86105050A Thermoelectronic transistor with kinetic energy modulation |
03/01/1988 | US4729115 Non-volatile dynamic random access memory cell |
03/01/1988 | US4729009 Gate dielectric including undoped amorphous silicon |
03/01/1988 | US4729007 Merged bipolar/field-effect transistors |
03/01/1988 | US4729005 Reducing edge field enhancement at an edge of a potential well |
03/01/1988 | US4729002 Self-aligned sidewall gate IGFET |
03/01/1988 | US4729001 Short-channel field effect transistor |
03/01/1988 | US4729000 Low power AlGaAs/GaAs complementary FETs incorporating InGaAs n-channel gates |
03/01/1988 | US4728998 CMOS circuit having a reduced tendency to latch |
03/01/1988 | US4728844 Fluoropolymer and bismuth oxide |
03/01/1988 | US4728626 Three dimensional, embedded silicides |
03/01/1988 | US4728624 Semiconductors |
03/01/1988 | US4728622 Semiconductors |
03/01/1988 | US4728621 Semiconductors |
03/01/1988 | US4728620 Process for the production of a MIS-type integrated circuit |
03/01/1988 | US4728617 Method of fabricating a MOSFET with graded source and drain regions |
03/01/1988 | US4728616 Ballistic heterojunction bipolar transistor |
03/01/1988 | US4728391 Semiconductors |
03/01/1988 | CA1233571A1 Short channel thin film field effect transistor |
02/25/1988 | WO1988001448A1 Full wave rectifier circuit |
02/25/1988 | WO1988001436A1 Process for fabricating stacked mos structures |
02/24/1988 | EP0256993A1 Electrically alterable, nonvolatile, floating gate memory device |
02/24/1988 | EP0256904A1 A method of fabricating high performance BiCMOS structures having poly emitters and silicided bases |
02/24/1988 | EP0256759A2 Resonant tunneling semiconductor device |