H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/1988
06/21/1988	US4752815 Method of fabricating a Schottky barrier field effect transistor
06/21/1988	US4752814 High voltage thin film transistor
06/21/1988	US4752813 Multilayer, electroconductivity, baarriers
06/21/1988	US4752812 Permeable-base transistor
06/21/1988	US4752699 On chip multiple voltage generation using a charge pump and plural feedback sense circuits
06/21/1988	US4752589 Process for the production of bipolar transistors and complementary MOS transistors on a common silicon substrate
06/16/1988	WO1988004474A1 Hetero-junction bipolar transistor
06/16/1988	WO1988004473A1 Enhanced density modified isoplanar process
06/16/1988	WO1988004472A1 Method of fabricating self aligned semiconductor devices
06/16/1988	WO1988004440A1 Optical reading of quantum well device
06/15/1988	EP0271346A2 Transistor employing composite of semiconductor material and conductive material
06/15/1988	EP0271247A2 A MOS field effect transistor and a process for fabricating the same
06/15/1988	EP0271232A1 Method of making an article comprising a heteroepitaxial structure
06/15/1988	EP0271110A2 Semiconductor device comprising an electrode pad
06/15/1988	EP0271080A2 Indium-phosphide hetero-MIS-gate field effect transistor
06/15/1988	EP0271070A1 Semiconductor device with silicide conductive layers and process of fabrication thereof
06/15/1988	EP0270975A2 Semiconductor switching device with anode shorting structure
06/15/1988	EP0270703A1 Method of producing a monolithic integrated circuit comprising at least one bipolar planar transistor
06/15/1988	EP0270567A1 Infrared imager.
06/14/1988	US4751562 Field-effect semiconductor device
06/14/1988	US4751557 Dram with FET stacked over capacitor
06/14/1988	US4751556 Junction field effect transistor
06/14/1988	US4751410 Complementary bi-mis gate circuit
06/14/1988	US4751196 High voltage thin film transistor on PLZT and method of manufacture thereof
06/14/1988	US4751195 Forming concave portion, emitter region
06/14/1988	US4751194 Interdiffusion in semiconductors
06/14/1988	US4750971 Forming oxide and nitride layers, masking, plasma etching to form groove
06/14/1988	CA1238122A1 Semiconductor device
06/14/1988	CA1238117A1 Stud-defined integrated circuit structure and fabrication
06/14/1988	CA1238115A1 Bi-directional overvoltage protection device
06/09/1988	DE3741567A1 Transistor clamped with Schottky barrier-junction diode
06/09/1988	DE3741400A1 Semiconductor switching device and method for producing it
06/09/1988	DE3739417A1 Transistor mit isoliertem gate und integraler vertikaldiode sowie verfahren zu seiner herstellung Insulated gate transistor and an integral vertical diode and method for its preparation
06/08/1988	EP0270323A2 A thin-film transistor
06/08/1988	EP0179810B1 Cmos integrated circuit technology
06/08/1988	EP0088399B1 Voltage-stable mos transistor for very high density integrated circuits
06/08/1988	CN87209110U Mos grid-controlled transverse thyristor
06/07/1988	US4750081 Phantom ESD protection circuit employing E-field crowding
06/07/1988	US4750028 Semiconductor device having floating semiconductor zones
06/07/1988	US4750025 Depletion stop transistor
06/07/1988	US4750024 Offset floating gate EPROM memory cell
06/07/1988	US4750023 Semiconductor devices having gate-controlled unipolar hot-carrier transistors and their manufacture
06/07/1988	US4749661 Formed in an integrated circuit with active base, collector and emitter regions in communication
06/07/1988	US4749660 Doping oxygen into silicon body at subcritical temperature, heat treating and randomizing
06/07/1988	US4749659 Method of manufacturing an infrared-sensitive charge coupled device
06/07/1988	US4749443 Sidewall oxide to reduce filaments
06/07/1988	US4749442 Layers of metal combined with semiconductor in contact windows
06/07/1988	US4749441 Semiconductor mushroom structure fabrication
06/07/1988	CA1237828A1 Semiconductor-on-insulator (soi) device having electrical short to avoid charge accumulation
06/07/1988	CA1237827A1 Field effect transistor
06/07/1988	CA1237826A1 Integrated circuit having dislocation-free substrate
06/07/1988	CA1237824A1 Resonant tunneling semiconductor device
06/02/1988	WO1988001829A3 Monocrystalline three-dimensional integrated circuit
06/01/1988	EP0269477A1 Production process of a MOS component
06/01/1988	EP0269349A2 Method of making an article comprising a buried SiO2 layer
06/01/1988	EP0269335A2 Radiation-sensitive device
06/01/1988	EP0269294A1 Method of manufacturing a bonded structure type semiconductor substrate
06/01/1988	EP0269225A2 Thin film electrical devices with amorphous carbon electrodes and method of making same
06/01/1988	EP0269224A2 Thin film overvoltage protection device
06/01/1988	EP0269211A2 Semiconductor device having a metallic layer
06/01/1988	EP0269128A2 Method for accurate suction/removal detection and suction/transfer apparatus for practicing the same
06/01/1988	EP0269123A2 A thin film transistor array for liquid crystal display panel
06/01/1988	EP0269019A2 Method for producing a semiconductor device
06/01/1988	EP0269008A2 Semiconductor device with improved passivation film and process of fabrication thereof
06/01/1988	EP0268941A1 MOS field-effect transistor structure with extremely flat source/drain regions and silicides connection regions, and method of manufacturing these within an intergrated circuit
06/01/1988	EP0268654A1 Method for fabricating devices using chemical vapour deposition, and devices formed thereby
06/01/1988	EP0268599A1 Semi-conductor component
06/01/1988	DE3739501A1 MOS transistor
05/1988
05/31/1988	US4748533 Integrated circuit for the protection of subscriber lines against overvoltages
05/31/1988	US4748492 Read only memory
05/31/1988	US4748485 Opposed dual-gate hybrid structure for three-dimensional integrated circuits
05/31/1988	US4748484 Heterojunction field effect transistor
05/31/1988	US4748483 Mechanical pressure Schottky contact array
05/31/1988	US4748133 Deposition of amorphous silicon for the formation of interlevel dielectrics in semiconductor memory devices
05/31/1988	US4748132 Micro fabrication process for semiconductor structure using coherent electron beams
05/31/1988	US4748131 Metal oxide semiconductor
05/31/1988	US4748130 Method of making buried contact solar cell
05/31/1988	US4748103 Mask-surrogate semiconductor process employing dopant protective region
05/31/1988	US4747909 Method for manufacturing a perpendicular sidewalled metal layer on a substrate
05/31/1988	US4747794 Electrical connector
05/31/1988	CA1237538A1 Lateral bipolar transistor
05/31/1988	CA1237537A1 Method of making mosfets using silicate glass layer as gate edge masking for ion implantation
05/26/1988	DE3638923A1 Integrated circuit device
05/26/1988	DE3636234A1 Thin-film field-effect transistor employing amorphous silicon
05/25/1988	EP0268512A2 Semiconductor device utilizing the resonant-tunneling effect
05/25/1988	EP0268472A2 Step-cut insulated gate static induction transistors and method of manufacturing the same
05/25/1988	EP0268426A2 High speed junction field effect transistor for use in bipolar integrated circuits
05/25/1988	EP0268386A2 Tunnelling transistor
05/25/1988	EP0268380A2 A liquid crystal display device having display and driver sections on a single board
05/25/1988	EP0268315A2 EEPROM memory cell with a single polysilicon level and a tunnel oxide zone
05/25/1988	EP0268266A2 Contacts of semiconductor devices
05/25/1988	EP0268249A2 Power MOSFET with current control
05/25/1988	EP0268136A2 Semiconductor arrangement
05/25/1988	EP0268027A1 Silicide to silicon bond
05/25/1988	EP0157779B1 Latch-up immune, multiple retrograde well high density cmos fet
05/25/1988	EP0138963B1 Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layers
05/25/1988	CN87102851A Gate-controlled semiconductor tetrode
05/24/1988	US4747077 Method of detecting the conductance state of a non-volatile memory device
05/24/1988	US4746967 Semiconductor device
05/24/1988	US4746963 Semiconductor devcice

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