Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/1986
11/11/1986US4621411 Laser-enhanced drive in of source and drain diffusions
11/10/1986EP0182876A4 Tri-well cmos technology.
11/06/1986WO1986006548A1 Sealed cavity semiconductor pressure transducers and method
11/06/1986WO1986006546A1 Process for making semiconductor devices which involve gaseous etching
11/06/1986WO1986006540A2 Memory cell for use in a read only memory
11/05/1986EP0200603A2 A small contactless ram cell
11/05/1986EP0200422A2 A transistor device
11/05/1986EP0200372A2 Self-aligned contact window formation in an integrated circuit
11/05/1986EP0200364A1 Method of fabricating metal silicide gate electrodes and interconnections
11/05/1986EP0200138A2 Thin film transistor, method of repairing the thin film transistor and displaying apparatus having the thin film transistor
11/05/1986EP0200059A2 A method of forming an ohmic contact to a group III-V semiconductor and a semiconductor intermediate manufacturing product
11/05/1986EP0199939A2 A method of producing a metal silicide-silicon structure and a metal silicide-silicon structure
11/05/1986CN85103830A Trench capacitor process for high density dynamic ram
11/04/1986US4621369 Input circuit for charge transfer device
11/04/1986US4621277 Semiconductor device having insulating film
11/04/1986US4621276 Buried contacts for N and P channel devices in an SOI-CMOS process using a single N+polycrystalline silicon layer
11/04/1986US4620968 Monoclinic phosphorus formed from vapor in the presence of an alkali metal
11/04/1986US4620361 Method for producing a semiconductor device with a floating gate
10/1986
10/29/1986EP0199497A2 Process for fabricating a self-aligned bipolar transistor
10/29/1986EP0199435A2 Field effect semiconductor device
10/29/1986EP0199424A2 Planar semiconductor device with a guard ring structure, family of such devices and method of manufacture
10/29/1986EP0199387A1 Charge transfer device
10/29/1986EP0199386A1 Method of producing conductive electrodes on a circuit element, and semiconductor device so obtained
10/29/1986EP0199300A2 Method for making a patterned metal layer
10/29/1986EP0199293A2 Insulated gate semiconductor device
10/29/1986EP0199078A1 Integrated semiconductor circuit having an aluminium or aluminium alloy contact conductor path and an intermediate tantalum silicide layer as a diffusion barrier
10/29/1986EP0199061A2 Semiconductor devices
10/29/1986CN85103269A Radio-resisting semiconductor device
10/29/1986CN85102150A Charge-coupled device
10/28/1986US4620213 Deep-grid semiconductor device
10/28/1986US4620211 Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices
10/28/1986US4620208 High performance, small area thin film transistor
10/28/1986US4620207 Edge channel FET
10/28/1986US4620206 Semiconductor device
10/28/1986US4619695 Process for producing high-purity metal targets for LSI electrodes
10/28/1986US4619039 Alternating covering with oxide and oxidation resistant material then preferential etching
10/28/1986US4619038 Selective titanium silicide formation
10/28/1986US4619034 Method of making laser recrystallized silicon-on-insulator nonvolatile memory device
10/28/1986CA1213378A1 Ballistic heterojunction bipolar transistors
10/28/1986CA1213377A1 Radiation-resistant semiconductor device
10/28/1986CA1213376A1 Indium phosphide-boron phosphide heterojunction bipolar transistor
10/23/1986WO1986006215A1 Monolithic integrated lateral thyristor
10/23/1986WO1986006213A1 Electrostatic discharge input protection network
10/22/1986EP0198590A2 Semiconductor memory device
10/22/1986EP0198569A1 Monolithic integrated circuits having protection against latch-up
10/22/1986EP0198468A2 Protective device for integrated circuit
10/22/1986EP0198446A2 Semiconductor device with short-length electrode and fabrication process therefor
10/22/1986EP0198383A2 Method of producing a semiconductor device for the integrated injection logic, and semiconductor device so manufactured
10/22/1986EP0198346A2 Solid-state threshold devices using punch-through
10/22/1986EP0198336A2 Hybrid extended drain concept for reduced hot electron effect
10/22/1986EP0198335A2 Graded extended drain concept for reduced hot electron effect
10/22/1986EP0198320A2 Thin film transistor using polycrystalline silicon
10/22/1986EP0198040A1 Nonvolatile memory cell.
10/22/1986EP0198012A1 Electrical connector
10/22/1986EP0197991A1 Method for producing electronic circuits based on thin layers transistors and capacitors.
10/22/1986EP0197948A1 Charge storage depletion region discharge protection
10/21/1986US4618877 Power semiconductor device with mesa type structure
10/21/1986US4618876 Electrically alterable, nonvolatile floating gate memory device
10/21/1986US4618875 Darlington transistor circuit
10/21/1986US4618873 Thin film device
10/21/1986US4618872 Integrated power switching semiconductor devices including IGT and MOSFET structures
10/21/1986US4618871 Schottky power diode
10/21/1986US4618844 Semiconductor pressure transducer
10/21/1986US4618781 Gate turn-off thyristor construction
10/21/1986US4618541 Using a small ratio of silane to ammonia
10/21/1986US4618510 Pre-passivated sub-micrometer gate electrodes for MESFET devices
10/21/1986US4618397 Method of manufacturing semiconductor device having a pressure sensor
10/21/1986US4617724 Process for fabricating heterojunction bipolar transistor with low base resistance
10/21/1986CA1213079A1 Microwave semiconductor device working together with another semiconductor device for reference potential
10/21/1986CA1213076A1 Wafer shape and method of making same
10/15/1986EP0197861A2 Microwave monolithic integrated circuit device
10/15/1986EP0197762A2 MOS capacitor and method of manufacturing the same
10/15/1986EP0197738A2 Method for manufacturing an LDD semiconductor device
10/15/1986EP0197531A2 Thin film transistor formed on insulating substrate
10/15/1986EP0197512A1 Light-activated thyristor with a low-loss supply of control power
10/15/1986EP0197501A2 Extended drain concept for reduced hot electron effect
10/15/1986EP0197454A2 Method for making semiconductor devices comprising insulating regions
10/15/1986EP0197424A2 Process of fabricating a heterojunction bipolar transistor
10/15/1986EP0197284A2 Method of producing semiconductor memory device
10/15/1986EP0197116A1 Low-leakage jfet.
10/15/1986CN86100558A 双极晶体管 Bipolar Transistors
10/14/1986US4617583 Gate turn-off thyristor
10/14/1986US4617532 Optically stabilized semiconductor microwave diodes
10/14/1986US4617482 Complementary type MOS field-effect transistor circuit provided with a gate protection structure of small time constant
10/14/1986US4617071 Method of fabricating electrically connected regions of opposite conductivity type in a semiconductor structure
10/14/1986US4616405 Semiconductor device and manufacturing method thereof
10/14/1986US4616404 Method of making improved lateral polysilicon diode by treating plasma etched sidewalls to remove defects
10/14/1986US4616402 Method of manufacturing a semiconductor device with a stacked-gate-electrode structure
10/14/1986US4616401 Method of fabricating an insulated gate type field-effect transistor
10/14/1986US4616400 Process for fabricating a double recess channel field effect transistor
10/14/1986US4616399 Method of manufacturing an insulated gate field effect transistor
10/14/1986CA1212781A1 Semiconductor power component and method of manufacturing
10/09/1986WO1986005893A1 Process for the manufacture of a display screen with liquid crystals and a diode network
10/09/1986WO1986005824A1 Thin layer consisting essentially of ruthenium salt
10/08/1986EP0196915A2 Thin film transistor array and method of manufacturing same
10/08/1986EP0196897A1 Thermal etching of a compound semiconductor
10/08/1986EP0196839A2 Piezoelectric transducer and components therefor
10/08/1986EP0196771A2 Improved programmable logic device
10/08/1986EP0196757A2 Semiconductor device comprising a bipolar transistor and a MOS transistor and method of manufacturing the same
10/08/1986EP0196517A1 Compound semiconductor device
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