| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/24/1988 | US4746961 Field effect transistor |
| 05/24/1988 | US4746960 Vertical depletion-mode j-MOSFET |
| 05/24/1988 | US4746959 One-transistor memory cell for large scale integration dynamic semiconductor memories and the method of manufacture thereof |
| 05/24/1988 | US4746804 Photosensitive pixel with exposed blocking element |
| 05/24/1988 | US4746629 Doping, selective etching |
| 05/24/1988 | US4746628 Method for making a thin film transistor |
| 05/24/1988 | US4746626 Method of manufacturing heterojunction bipolar transistors |
| 05/24/1988 | US4746624 Method for making an LDD MOSFET with a shifted buried layer and a blocking region |
| 05/24/1988 | US4746623 Method of making bipolar semiconductor device with wall spacer |
| 05/24/1988 | US4746622 Process for preparing a charge coupled device with charge transfer direction biasing implants |
| 05/24/1988 | US4746398 Oxidation inhibition |
| 05/24/1988 | US4746377 Semiconductor device with thermally oxidized insulating and arsenic diffusion layers |
| 05/24/1988 | US4746181 Optical semiconductor device |
| 05/19/1988 | WO1988002172A3 Non-volatile memory with floating grid and without thick oxide |
| 05/18/1988 | EP0267882A1 Monolithic integration of isolated, high performance, power vdmos transistors and of high voltage p-channel mos transistors together with cmos, npn, pnp transistors and low leakage diodes |
| 05/18/1988 | EP0267824A1 Transistor-driven electro-optical visualization screen, and method of manufacturing it |
| 05/18/1988 | EP0267768A1 High voltage drifted-drain MOS transistor |
| 05/18/1988 | EP0267447A2 A vertical DMOS power transistor with an integral operating condition sensor |
| 05/18/1988 | EP0157780B1 High density mosfet with field oxide aligned channel stops and method of fabricating the same |
| 05/18/1988 | CN86101937B Resistance-oxide-semiconductor (ros) transistor |
| 05/17/1988 | US4745453 Semiconductor device |
| 05/17/1988 | US4745452 Tunneling transfer devices |
| 05/17/1988 | US4745449 Integrated electronics suitable for optical communications |
| 05/17/1988 | US4745448 Doped galium arsenide layers |
| 05/17/1988 | US4745447 Gallium arsenide on gallium indium arsenide Schottky barrier device |
| 05/17/1988 | US4745445 Millimeter wave frequency integrated circuit |
| 05/17/1988 | US4745339 Lamp failure detecting device for automobile |
| 05/17/1988 | US4745086 Removable sidewall spacer for lightly doped drain formation using one mask level and differential oxidation |
| 05/17/1988 | US4745082 Forming field effect transistor with uniform gate length |
| 05/17/1988 | US4745081 Method of trench filling |
| 05/17/1988 | US4745080 Method of making a self-aligned bipolar transistor with composite masking |
| 05/17/1988 | US4745079 Method for fabricating MOS transistors having gates with different work functions |
| 05/17/1988 | US4744862 Manufacturing methods for nonlinear semiconductor element and liquid crystal display panel using the same |
| 05/17/1988 | US4744861 Method of producing semiconductor device using reactive ion etching |
| 05/17/1988 | US4744859 Process for fabricating lightly doped drain MOS devices |
| 05/17/1988 | US4744672 Semiconductor arrangement |
| 05/17/1988 | US4744246 Flow sensor on insulator |
| 05/17/1988 | CA1236933A1 Amorphous semiconductor device and method and apparatus for producing the same |
| 05/17/1988 | CA1236932A1 Trench transistor |
| 05/17/1988 | CA1236931A1 Semiconductor device structure and processing by means of preferential etch undercutting |
| 05/17/1988 | CA1236928A1 Base coupled transistor logic |
| 05/17/1988 | CA1236919A1 Single transistor electrically programmable memory device and method |
| 05/11/1988 | EP0266937A1 Complementary semiconductor device production |
| 05/11/1988 | EP0266768A1 Manufacturing method for forming a MOS transistor by self-alignment of the source/drain regions |
| 05/11/1988 | EP0266412A1 Surface mountable diode. |
| 05/11/1988 | DE3737144A1 Metal-oxide semiconductor field-effect transistor (MOSFET) and method for producing it |
| 05/11/1988 | DE3637513A1 Method of producing finely structured contact electrodes of power semiconductor components |
| 05/11/1988 | CN87203844U Large power triode with two passivating layers |
| 05/10/1988 | US4744054 Semiconductor device with a memory circuit |
| 05/10/1988 | US4743953 Dielectric film with conductivity type opposite substrate particle sizes and reduced mimimizes current leakage |
| 05/10/1988 | US4743952 Insulated-gate semiconductor device with low on-resistance |
| 05/10/1988 | US4743951 Multilayer epitaxial channel; edges adjacent gate electrodes contain aluminum-antimony; central conductive part contains indium-arsenic, gallium-antimony and/or alloys |
| 05/10/1988 | US4743950 Thyristor with switchable emitter short circuit |
| 05/10/1988 | US4743949 Infrared optical-electronic device |
| 05/10/1988 | US4743566 Method of manufacturing a semiconductor device, in which a silicon slice is locally provided with field oxide with a channel stopper |
| 05/10/1988 | US4743565 Controlling width of semiconductor |
| 05/10/1988 | CA1236590A1 Semiconductor device with hole conduction via strained lattice |
| 05/05/1988 | WO1988003329A1 Process for forming mos integrated circuit devices |
| 05/05/1988 | WO1988003328A1 Striped-channel transistor and method of forming the same |
| 05/05/1988 | WO1988002927A3 T-gate electrode for field effect transistor and field effect transistor made therewith |
| 05/04/1988 | EP0266268A1 Method of depositing an insulating layer on a III-V material substrate by chemical vapour deposition with thermal irradiation, use in the production of an MIS structure |
| 05/04/1988 | EP0266205A2 Semiconductor device constituting bipolar transistor |
| 05/04/1988 | EP0266166A2 High electron mobility transistor |
| 05/04/1988 | EP0266093A2 Process of making a high power multi-layer semiconductive switching device with multiple parallel contacts |
| 05/04/1988 | EP0265988A1 Epitaxial layers with controlled quantities of nitrogen, grown on silicon substrates and method for producing the same |
| 05/04/1988 | EP0265958A2 Process of making insulated- gate field-effect transistors |
| 05/04/1988 | EP0265833A1 Semiconductor component having at least one power MOSFET |
| 05/04/1988 | EP0265616A2 A semiconductor trench capacitor structure |
| 05/04/1988 | EP0265593A2 Field-effect transistor formed in a semi-insulating substrate |
| 05/04/1988 | EP0265489A1 Process for manufacturing semiconductor devices. |
| 05/04/1988 | CN87107179A Large area fransducer array electrostatic disckarge protection circuit |
| 05/03/1988 | US4742492 EEPROM memory cell having improved breakdown characteristics and driving circuitry therefor |
| 05/03/1988 | US4742491 Memory cell having hot-hole injection erase mode |
| 05/03/1988 | US4742425 Multiple-cell transistor with base and emitter fuse links |
| 05/03/1988 | US4742382 Semiconductor component |
| 05/03/1988 | US4742381 Semiconductor charge-coupled device with an increased surface state |
| 05/03/1988 | US4742380 Switch utilizing solid-state relay |
| 05/03/1988 | US4742379 HEMT with etch-stop |
| 05/03/1988 | US4742377 Schottky barrier device with doped composite guard ring |
| 05/03/1988 | US4742253 Integrated insulated-gate field-effect transistor circuit for evaluating the voltage of a node to be sampled against a fixed reference voltage |
| 05/03/1988 | US4742026 Ion milling with dichlorodifluoromethane |
| 05/03/1988 | US4742021 Compatible with standard bipolar integrated circuit wafer fabrication processes |
| 05/03/1988 | US4742016 Arsenic implanted in silicon oxide layer, out diffusion into selected portions of buried channel |
| 05/03/1988 | US4742015 Method for producing a protective arrangement for a field-effect transistor |
| 05/03/1988 | US4742014 Method of making metal contacts and interconnections for VLSI devices with copper as a primary conductor |
| 05/03/1988 | US4741964 Structure containing hydrogenated amorphous silicon and process |
| 05/03/1988 | CA1236224A1 Multilayer ohmic contact for p-type semiconductor and method for making same |
| 04/27/1988 | EP0265314A1 Method of forming an insulating layer of a sulphide, sulphur compounds obtained and device to carry out the method |
| 04/27/1988 | EP0265290A2 Electrostatic discharge protection network for large area transducer arrays |
| 04/27/1988 | EP0264932A1 Field effect transistor |
| 04/27/1988 | EP0264774A2 Improved post-oxidation anneal of silicon dioxide |
| 04/27/1988 | EP0264692A2 Method of forming a bridge contact |
| 04/27/1988 | EP0264679A1 Method of applying a bevelled edge contour to a semiconductor wafer |
| 04/26/1988 | US4740829 Semiconductor device having a thin layer comprising germanium atoms as a matrix with a restricted range of hydrogen atom concentration |
| 04/26/1988 | US4740826 Vertical inverter |
| 04/26/1988 | US4740823 Photo-detectors |
| 04/26/1988 | US4740822 Field effect device maintaining a high speed operation in a high voltage operation |
| 04/26/1988 | US4740821 NPN equivalent structure with breakdown voltage greater than the intrinsic breakdown voltage of NPN transistors |
| 04/26/1988 | US4740713 MOS semiconductor integrated circuit in which the production of hot carriers near the drain of a short n channel conductivity type MOS transistor is decreased |
| 04/26/1988 | US4740484 Metallization, siliciding, etching, doping; insulating |