| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 07/20/1988 | EP0274511A1 Single quantum well resonant tunneling semiconductor devices. |
| 07/20/1988 | EP0274469A1 Monolithically-integrated semiconductor devices. |
| 07/20/1988 | EP0179099B1 Monolithic integrated planar semi-semiconductor arrangement and process for its production |
| 07/20/1988 | CN86109631A Electrode lead-out process for power semiconductor device |
| 07/19/1988 | US4758984 Semiconductor memory device including read only memory element for storing fixed information |
| 07/19/1988 | US4758873 Balanced MOS capacitor with low stray capacitance and high ESD survival |
| 07/19/1988 | US4758872 Integrated circuit fabricated in a semiconductor substrate |
| 07/19/1988 | US4758871 Thyristor with multiple groups of insulated control electrodes |
| 07/19/1988 | US4758870 Semiconductor device |
| 07/19/1988 | US4758869 Nonvolatile floating gate transistor structure |
| 07/19/1988 | US4758868 Ballistic hetero-junction transistor with transverse two dimensional electron gas layer |
| 07/19/1988 | US4758741 Photosensitive device ensuring an anti-blooming effect |
| 07/19/1988 | US4758537 Lateral subsurface zener diode making process |
| 07/19/1988 | US4758534 Process for producing porous refractory metal layers embedded in semiconductor devices |
| 07/19/1988 | US4758529 Method of forming an improved gate dielectric for a MOSFET on an insulating substrate |
| 07/19/1988 | US4758528 Self-aligned metal process for integrated circuit metallization |
| 07/13/1988 | EP0274390A2 Semiconductor memory device and method of manufacturing the same |
| 07/13/1988 | EP0274289A1 Superlattice optical modulator |
| 07/13/1988 | EP0274278A1 MOS field effect transistor and method of manufacturing the same |
| 07/13/1988 | EP0274217A1 Method of producing a semiconductor device |
| 07/13/1988 | EP0274190A2 PN juction with enhanced breakdown voltage |
| 07/12/1988 | US4757369 Group III-V semiconductor electrical contact |
| 07/12/1988 | US4757368 Semiconductor device having electric contacts with precise resistance values |
| 07/12/1988 | US4757367 Light triggered semiconductor device with detachable auxiliary thyrister |
| 07/12/1988 | US4757366 Light-triggerable thyristor having low-loss feed of the trigger energy |
| 07/12/1988 | US4757364 Light emitting element |
| 07/12/1988 | US4757362 High voltage MOS transistor |
| 07/12/1988 | US4757361 Amorphous thin film transistor device |
| 07/12/1988 | US4757360 Floating gate memory device with facing asperities on floating and control gates |
| 07/12/1988 | US4757358 MESFET semiconductor device fabrication with same metal contacting source, drain and gate regions |
| 07/12/1988 | US4757190 Optical circuit |
| 07/12/1988 | US4757033 Forming two layer insulating film on surface of substrate, patterning, etching, depositing electrode metal |
| 07/12/1988 | US4757032 Method for DMOS semiconductor device fabrication |
| 07/12/1988 | US4757031 Providing doped semiconductor body of first conductivity type, forming zone of second conductivity type, forming recess, diffusing dopant |
| 07/12/1988 | US4757029 Method of making vertical field effect transistor with plurality of gate input cnnections |
| 07/12/1988 | US4757028 Process for preparing a silicon carbide device |
| 07/12/1988 | US4757027 Making bipolar transistor structure in island of first conductivity type epitaxial layer, the island being surrounded by insulating material,the epitaxial layer being separated from substrate of opposite conductivity |
| 07/12/1988 | US4757026 Fabricating complementary metal oxide semiconductor integrated circuit where at least two insulated gate members are formed on portion of substrate |
| 07/12/1988 | US4757025 Method of making gate turn off switch with anode short and buried base |
| 07/12/1988 | US4756793 Method of manufacturing a semiconductor device |
| 07/06/1988 | EP0273743A2 Electronic device having electrode and driving circuit substrate for display device |
| 07/06/1988 | EP0273728A2 Semiconductor memory device and method of manufacturing the same |
| 07/06/1988 | EP0273363A2 Heterojunction bipolar transistor with ballistic operation |
| 07/06/1988 | EP0273142A2 Low drift emitter base oxide zener |
| 07/06/1988 | EP0273047A1 Bidirectional vertical power mos device and fabrication method. |
| 07/05/1988 | US4755867 Vertical Enhancement-mode Group III-V compound MISFETs |
| 07/05/1988 | US4755865 Means for stabilizing polycrystalline semiconductor layers |
| 07/05/1988 | US4755862 Integrated triac structure with diac control |
| 07/05/1988 | US4755861 Light-firable thyristor |
| 07/05/1988 | US4755859 Thin film static induction transistor and method for manufacturing the same |
| 07/05/1988 | US4755858 Field effect transistor |
| 07/05/1988 | US4755857 Heterostructure semiconductor device |
| 07/05/1988 | US4755695 Logic gate having low power consumption |
| 07/05/1988 | US4755694 Integrated circuit Darlington transistor power stage incorporating various circuit components integrated on the same substrate |
| 07/05/1988 | US4755487 Method for making bipolar transistors using rapid thermal annealing |
| 07/05/1988 | US4755484 Method of making a semimetal semiconductor contact |
| 07/05/1988 | US4755479 Manufacturing method of insulated gate field effect transistor using reflowable sidewall spacers |
| 07/05/1988 | US4755478 Method of forming metal-strapped polysilicon gate electrode for FET device |
| 07/05/1988 | US4755476 Process for the production of self-adjusted bipolar transistor structures having a reduced extrinsic base resistance |
| 07/04/1988 | EP0273047A4 Bidirectional vertical power mos device and fabrication method. |
| 06/30/1988 | WO1988004830A1 Semi-insulating group iii-v based compositions |
| 06/30/1988 | DE3741937A1 Elektrisch loeschbarer festwertspeicher (eeprom) mit einfach-polysiliziumschicht Electrically erasable read-only memory (eeprom) with single-polysilicon layer |
| 06/29/1988 | EP0273030A2 Lateral insulated-gate rectifier structures |
| 06/29/1988 | EP0272985A2 Constant current semiconductor device |
| 06/29/1988 | EP0272885A2 Semiconductor device having level shift diode |
| 06/29/1988 | EP0272755A2 A method of manufacturing a semiconductor device |
| 06/29/1988 | EP0272754A2 Complementary lateral insulated gate rectifiers |
| 06/29/1988 | EP0272753A2 Complementary silicon-on-insulator lateral insulated gate rectifiers |
| 06/29/1988 | EP0272732A2 Eeprom memory cell with a single level of polysilicon writable and cancellable bit by bit |
| 06/29/1988 | EP0272506A2 Thin film transistor array for liquid crystal displays allowing in-process testing, testing method, and information entry system comprising such an array |
| 06/29/1988 | EP0272384A1 Monolithic integrated photodetector |
| 06/29/1988 | EP0272303A1 Method for fabricating devices in iii-v semiconductor substrates and devices formed thereby |
| 06/29/1988 | EP0272280A1 A process for the manufacture of iii-v semiconductor devices. |
| 06/29/1988 | CN87107369A Collector contact of integrated bipolar transistor |
| 06/29/1988 | CN87107362A Method of making monolithic integrated circuit comprising at least one bipolar planar transistor |
| 06/29/1988 | CN85109742B Method of producing semiconductor integrated circuit devices |
| 06/28/1988 | US4754320 EEPROM with sidewall control gate |
| 06/28/1988 | US4754316 Solid state interconnection system for three dimensional integrated circuit structures |
| 06/28/1988 | US4754315 Bipolar semiconductor devices with implanted recombination region |
| 06/28/1988 | US4754311 Semiconductor device with contacts to parallel electrode strips |
| 06/28/1988 | US4754310 High voltage semiconductor device |
| 06/28/1988 | US4753900 Method of forming electrodes aligned with respect to a level of implantation in a substrate and a method of forming a charge transfer filter |
| 06/28/1988 | US4753899 Process for the fabrication of a Schottky gate field-effect transistor having a submicron effective channel length |
| 06/28/1988 | US4753897 Forming dopant blocking layer on segments, then intermetallic |
| 06/28/1988 | US4753896 Sidewall channel stop process |
| 06/28/1988 | US4753895 Ion implantation amorphizing buried layer; recaystallization |
| 06/28/1988 | US4753851 Multiple layer, tungsten/titanium/titanium nitride adhesion/diffusion barrier layer structure for gold-base microcircuit interconnection |
| 06/28/1988 | CA1238721A1 Dopant control of metal silicide formation |
| 06/28/1988 | CA1238719A1 Reversible charge storage floating gate heterojunction device |
| 06/22/1988 | EP0272184A1 Low-capacity overvoltage protection device |
| 06/22/1988 | EP0272051A2 Reduced area butting contact structure |
| 06/22/1988 | EP0271932A2 EEPROM memory cell with two levels of polysilicon and a tunnel oxide zone |
| 06/22/1988 | EP0271686A2 On chip multi-level voltage generation system |
| 06/22/1988 | EP0271599A1 Collector contact of an integrated bipolar transistor |
| 06/22/1988 | CN87107677A Source drain doping technique |
| 06/22/1988 | CN87107402A 半导体器件 Semiconductor devices |
| 06/21/1988 | US4752912 Floating gate device |
| 06/21/1988 | US4752818 Static induction thyristor |
| 06/21/1988 | US4752817 High performance integrated circuit having modified extrinsic base |
| 06/21/1988 | US4752816 Electronic component |