| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/19/1993 | EP0542448A2 Charge transfer device with junction type output transistor |
| 05/19/1993 | EP0542323A1 Signal processing device |
| 05/19/1993 | EP0542279A1 Thin-film transistor with a protective layer and method of manufacturing the same |
| 05/19/1993 | EP0542271A2 Thin-film device with a compound conductive layer |
| 05/19/1993 | EP0541993A1 High power semiconductor device with integral on-state voltage detection structure |
| 05/19/1993 | EP0541971A2 A graded bandgap single-crystal emitter heterojunction bipolar transistor |
| 05/19/1993 | EP0247070B1 Partial direct injection for signal processing system |
| 05/18/1993 | US5212541 Contactless, 5v, high speed eprom/flash eprom array utilizing cells programmed using source side injection |
| 05/18/1993 | US5212404 Semiconductor device having a vertical channel of carriers |
| 05/18/1993 | US5212401 High temperature rectifying contact |
| 05/18/1993 | US5212396 Conductivity modulated field effect transistor with optimized anode emitter and anode base impurity concentrations |
| 05/18/1993 | US5212150 Heat and oxidation resistance |
| 05/18/1993 | US5212112 Selective epitaxy of silicon in silicon dioxide apertures with suppression of unwanted formation of facets |
| 05/18/1993 | US5212105 Semiconductor device manufacturing method and semiconductor device manufactured thereby |
| 05/18/1993 | US5212104 Integrated circuits |
| 05/13/1993 | WO1993009567A1 Auxiliary gate lightly doped drain (agldd) structure with dielectric sidewalls |
| 05/13/1993 | WO1993009564A1 PROCESS FOR PRODUCING A Si/FeSi2-HETEROSTRUCTURE |
| 05/12/1993 | EP0541212A2 Process for fabricating semiconductor metal oxide device |
| 05/12/1993 | EP0541205A2 Method to produce complementary heterojunction bipolar transistors |
| 05/12/1993 | EP0540994A1 Structure of high dielectric constant metal/dielectric/ semiconductor capacitor for use as a storage capacitor in memory devices |
| 05/12/1993 | EP0540993A1 Structure and fabrication of high transconductance MOS field effect transistor using a buffer layer/ferroelectric/buffer layer stack as the gate dielectric |
| 05/12/1993 | EP0540516A1 Semiconductor switch |
| 05/12/1993 | EP0272280B1 A process for the manufacture of iii-v semiconductor devices |
| 05/11/1993 | US5210716 Semiconductor nonvolatile memory |
| 05/11/1993 | US5210598 Amorphous silicon, silicon dioxide insulation |
| 05/11/1993 | US5210597 Non-volatile semiconductor memory device and a method for fabricating the same |
| 05/11/1993 | US5210596 Thermally optimized interdigitated transistor |
| 05/11/1993 | US5210451 Power semiconductor circuit |
| 05/11/1993 | US5210439 Power transistor monolithic integrated structure |
| 05/11/1993 | US5210437 MOS device having a well layer for controlling threshold voltage |
| 05/11/1993 | US5210436 Semiconductor device with input protection circuit of high withstand voltage |
| 05/11/1993 | US5210435 ITLDD transistor having a variable work function |
| 05/11/1993 | US5210433 Solid-state CCD imaging device with transfer gap voltage controller |
| 05/11/1993 | US5210432 Insulated gate gto thyristor |
| 05/11/1993 | US5210431 Ohmic connection electrodes for p-type semiconductor diamonds |
| 05/11/1993 | US5210056 Method for forming a gate oxide film of a semiconductor device |
| 05/11/1993 | US5210050 Method for manufacturing a semiconductor device comprising a semiconductor film |
| 05/11/1993 | US5210047 Process for fabricating a flash EPROM having reduced cell size |
| 05/11/1993 | US5210046 Method of fabricating eprom device with metallic source connections |
| 05/11/1993 | US5210044 Method of manufacturing a floating gate type nonvolatile memory cell having an offset region |
| 05/11/1993 | US5209120 Semiconductor pressure-detecting apparatus |
| 05/05/1993 | EP0540446A2 Self-aligned contact studs for semiconductor structures |
| 05/05/1993 | EP0540312A1 Bump electrode structure and semiconductor chip having the same |
| 05/05/1993 | EP0540276A2 A self-aligned contact process |
| 05/05/1993 | EP0540233A1 Planar FET-SEED integrated circuits |
| 05/05/1993 | EP0540163A2 Switched capacitor analog circuits |
| 05/05/1993 | EP0540017A1 MOS gate controlled thyristor |
| 05/05/1993 | EP0539963A2 Dry etching method of GaAs |
| 05/05/1993 | EP0539949A2 High electron mobility transistor having improved electron controllability |
| 05/05/1993 | EP0539718A1 Turn-off power semi-conductor device |
| 05/05/1993 | EP0539693A2 Compound semiconductor device |
| 05/05/1993 | EP0539690A2 Compound semiconductor device |
| 05/05/1993 | EP0539688A2 Compound semiconductor device and production method therefor |
| 05/05/1993 | EP0539685A1 High area capacitor formation using material dependent etching |
| 05/05/1993 | EP0539681A1 High area capacitor formation using dry etching |
| 05/05/1993 | EP0513185A4 Mosfet structure having reduced gate capacitance and method of forming same |
| 05/05/1993 | EP0449858B1 High-voltage transistor arrangement produced by cmos technology |
| 05/04/1993 | US5208772 Gate EEPROM cell |
| 05/04/1993 | US5208725 High capacitance structure in a semiconductor device |
| 05/04/1993 | US5208690 Liquid crystal display having a plurality of pixels with switching transistors |
| 05/04/1993 | US5208597 Compensated capacitors for switched capacitor input of an analog-to-digital converter |
| 05/04/1993 | US5208476 Low leakage current offset-gate thin film transistor structure |
| 05/04/1993 | US5208473 Lightly doped MISFET with reduced latchup and punchthrough |
| 05/04/1993 | US5208472 Double spacer salicide MOS device and method |
| 05/04/1993 | US5208471 Semiconductor device and manufacturing method therefor |
| 05/04/1993 | US5208189 Process for plugging defects in a dielectric layer of a semiconductor device |
| 05/04/1993 | US5208184 Zinc, carbon, silicon, gallium arsenide |
| 05/04/1993 | US5208175 Forming pattern of floating and control gate electrodes; thickened edge of dielectric film |
| 05/04/1993 | US5208174 Method for manufacturing a nonvolatile semiconductor memory device |
| 05/04/1993 | US5208173 FLOTOX EEPROM, thin oxide film |
| 05/04/1993 | US5208172 Method for forming a raised vertical transistor |
| 05/04/1993 | US5208171 Process for preparing BiCMOS semiconductor device |
| 05/04/1993 | US5208169 Method of forming high voltage bipolar transistor for a BICMOS integrated circuit |
| 05/04/1993 | US5208168 Semiconductor device having punch-through protected buried contacts and method for making the same |
| 05/04/1993 | US5208167 Epitaxial crystal |
| 05/04/1993 | US5207102 Semiconductor pressure sensor |
| 04/29/1993 | WO1993008610A1 Voltage variable capacitor having amorphous dielectric film |
| 04/29/1993 | WO1993008604A1 P-channel transistor |
| 04/29/1993 | WO1993008603A1 Soi cmos device having body extension for providing sidewall channel stop and body tie |
| 04/29/1993 | WO1993008602A1 Circuit for protecting a semiconductor device from voltage produced by discharges of static electricity |
| 04/29/1993 | WO1993008599A1 Bipolar junction transistor exhibiting improved beta and punch-through characteristics |
| 04/29/1993 | WO1993008578A1 Voltage variable capacitor |
| 04/29/1993 | DE4135412A1 MOS-controlled thyristor with emitter surface loss compensation - has auxiliary emitter regions in base layer under gate electrode between individual thyristor cells or groups |
| 04/29/1993 | DE4135258A1 Fast power diode with low-loss soft recovery - has two portions with breakthrough losses and switching losses decoupled from each other and separately optimised |
| 04/29/1993 | DE4134879A1 P-kanal-transistor P-channel transistor |
| 04/29/1993 | CA2120261A1 Bipolar junction transistor exhibiting improved beta and punch-through characteristics |
| 04/28/1993 | EP0539312A2 Isolated films using an air dielectric |
| 04/28/1993 | EP0539311A2 Buried air dielectric isolation of silicon islands |
| 04/28/1993 | EP0539205A2 Phonon controlled conductivity device |
| 04/28/1993 | EP0539184A2 Non-volatile semiconductor memory |
| 04/28/1993 | EP0538792A2 Multiple narrow-line-channel fet having improved noise characteristics |
| 04/28/1993 | EP0538682A2 Oxygen assisted ohmic contact formation to N-type gallium arsenide |
| 04/28/1993 | EP0538619A1 Multilayer conductive wire for semiconductor device and manufacturing method thereof |
| 04/28/1993 | EP0538282A1 Gated base controlled thyristor |
| 04/27/1993 | US5206749 Liquid crystal display having essentially single crystal transistors pixels and driving circuits |
| 04/27/1993 | US5206531 Semiconductor device having a control gate with reduced semiconductor contact |
| 04/27/1993 | US5206528 Compound semiconductor field effect transistor having a gate insulator formed of insulative superlattice layer |
| 04/27/1993 | US5206527 Field effect transistor |
| 04/27/1993 | US5206524 Heterostructure bipolar transistor |
| 04/27/1993 | US5206523 Microporous crystalline silicon of increased band-gap for semiconductor applications |