| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/10/1993 | WO1993011559A1 METHOD FOR MANUFACURING SEMICONDUCTER COMPONENTS, PARTICULARLY ON GaAs OR InP, WITH CHEMICAL RECOVERY OF THE SUBSTRAT |
| 06/10/1993 | WO1993011540A1 Nonvolatile random access memory device |
| 06/10/1993 | CA2101154A1 Integrated electronic shutter for charge-coupled devices |
| 06/09/1993 | EP0545521A2 Schottky diode structure and fabrication process |
| 06/09/1993 | EP0545488A1 Semiconductor device comprising at least one power transistor and at least one control circuit with dynamic insulation circuit integrated monolithically in the same chip |
| 06/09/1993 | EP0545484A2 Manufacturing process for insulated gate field effect transistors (igfet) with low short circuit density between gate and source and devices obtained thereby |
| 06/09/1993 | EP0545381A2 Tunneling transistor |
| 06/09/1993 | EP0545327A1 Thin-film transistor array for use in a liquid crystal display |
| 06/09/1993 | EP0545288A1 Reverse conducting gate turn off thyristor and method of fabricating same |
| 06/09/1993 | EP0545255A2 Quantum semiconductor device employing quantum boxes for enabling compact size and high-speed operation |
| 06/09/1993 | EP0545074A2 Method for producing electrically erasable and programmable read-only memory cells with a single polysilicon level |
| 06/08/1993 | US5218614 Semiconductor laser device |
| 06/08/1993 | US5218506 Protection of analog reference and bias voltage inputs |
| 06/08/1993 | US5218232 Semiconductor device having two-level wiring |
| 06/08/1993 | US5218228 High voltage MOS transistors with reduced parasitic current gain |
| 06/08/1993 | US5218227 Semiconductor device and method of manufacturing same |
| 06/08/1993 | US5218226 Semiconductor device having high breakdown voltage |
| 06/08/1993 | US5218221 Semiconductor device and manufacturing method thereof |
| 06/08/1993 | US5218220 Power fet having reduced threshold voltage |
| 06/08/1993 | US5218217 Dynamic random access memory device and method of manufacturing |
| 06/08/1993 | US5218214 Integrated circuit |
| 06/08/1993 | US5218213 SOI wafer with sige |
| 06/08/1993 | US5217923 Method of fabricating a semiconductor device having silicided source/drain regions |
| 06/08/1993 | US5217913 Improving transistor characteristics of miniaturized metal insulator semiconductor |
| 06/08/1993 | US5217911 Method of producing a semiconductor structure including a Schottky junction |
| 06/08/1993 | US5217910 Method of fabricating semiconductor device having sidewall spacers and oblique implantation |
| 06/08/1993 | US5217909 Forming the base, emitter and receiver terminals from a single layer polycrystalline silicon |
| 06/08/1993 | US5217908 Semiconductor device having an insulator film of silicon oxide in which oh ions are incorporated |
| 06/03/1993 | DE4211052C1 Power FET mfr. using angled ion implantation beam - forming asymmetrical insulation zone in contact layer applied to surface of channel layer beneath gate metallisation |
| 06/03/1993 | DE4201910A1 Verfahren zum herstellen einer integrierten leistungsschaltung mit einem vertikalen leistungsbauelement A method for manufacturing an integrated power circuit having a vertical power component |
| 06/03/1993 | DE4137840A1 High-voltage blocking semiconductor switch e.g. pin diode or GTO thyristor - has additional layer with doping concentration chosen so as to form two sided junction between layer and substrate |
| 06/03/1993 | DE4136511A1 Verfahren zur herstellung eienr si/fesi(pfeil abwaerts)2(pfeil abwaerts)-heterostruktur Process for the preparation eienr si / FeSi (Down Arrow) 2 (down arrow) heterostructure |
| 06/02/1993 | EP0544470A1 Thin film transistor, method of fabricating the same and ion implantation method used in the fabrication |
| 06/02/1993 | EP0544438A2 Method for selectively growing gallium-containing layers |
| 06/02/1993 | EP0544437A2 Method for selectively growing aluminum-containing layers |
| 06/02/1993 | EP0544397A1 A PNPN semiconductor device |
| 06/02/1993 | EP0544364A2 Monolithic semi-conductor device having a vertical structure with a deep-base and finger-emitter power transistor having a ballast resistance |
| 06/02/1993 | EP0544229A1 Thin film transistor device for driving circuit and matrix circuit |
| 06/02/1993 | EP0544069A1 Thin-film transistor panel and method of manufacturing the same |
| 06/02/1993 | EP0544047A1 High current MOS transistor integrated bridge structure optimising conduction power losses |
| 06/02/1993 | EP0543946A1 Image sensor having transfer gate between the photodiode and the ccd gate |
| 06/02/1993 | EP0283496B1 Semi-conductor element with a p-region on the anode side and a weakly-doped adjacent n-base region |
| 06/02/1993 | EP0277166B1 Process for the production of bipolar devices |
| 06/01/1993 | US5216633 Nonvolatile semiconductor memory device including access code circuitry |
| 06/01/1993 | US5216282 Self-aligned contact studs for semiconductor structures |
| 06/01/1993 | US5216276 Semiconductor integrated circuit device having high matching degree and high integration density |
| 06/01/1993 | US5216275 Semiconductor power devices with alternating conductivity type high-voltage breakdown regions |
| 06/01/1993 | US5216272 High withstanding voltage MIS transistor |
| 06/01/1993 | US5216271 BiCMOS device with low bandgap CMOS contact regions and low bandgap bipolar base region |
| 06/01/1993 | US5216270 Non-volatile memory cell with tunnel window structure and method |
| 06/01/1993 | US5216269 Electrically-programmable semiconductor memories with buried injector region |
| 06/01/1993 | US5216268 Full-featured EEPROM |
| 06/01/1993 | US5216266 Semiconductor memory device having memory cells formed in trench and manufacturing method therefor |
| 06/01/1993 | US5216264 Silicon carbide MOS type field-effect transistor with at least one of the source and drain regions is formed by the use of a schottky contact |
| 06/01/1993 | US5216262 Quantum well structures useful for semiconductor devices |
| 06/01/1993 | US5216260 Optically bistable semiconductor device with pairs of monoatomic layers separated by intrinsic layers |
| 06/01/1993 | US5215937 Spacing of channel doping from source-drain doping with self-alignment |
| 06/01/1993 | US5215936 Method of fabricating a semiconductor device having a lightly-doped drain structure |
| 06/01/1993 | US5215934 Process for reducing program disturbance in eeprom arrays |
| 06/01/1993 | US5215931 Lightly doped drain profile; low resistance contact region lies along entire width of body region; vertical contact |
| 06/01/1993 | CA1318521C Vibrating type transducer and manufacturing process thereof |
| 05/27/1993 | WO1993010573A1 Die mounting with uniaxial conductive adhesive |
| 05/27/1993 | WO1993010563A1 Power fet having reduced threshold voltage |
| 05/27/1993 | DE4138725A1 Transistor for proportional transmission of current - has electromagnetic linear activator displacing eccentric coupling to apply pressure to surface of transistor |
| 05/27/1993 | CA2123877A1 Die mounting with uniaxial conductive adhesive |
| 05/26/1993 | EP0543759A2 A poly-emitter structure with improved interface control |
| 05/26/1993 | EP0543745A1 MOS transistor with integrated zener diode protection |
| 05/26/1993 | EP0543742A1 Monolithic low-voltage protection diode with low capacity |
| 05/26/1993 | EP0543703A1 Single-transistor electrically programmable integrated memory |
| 05/26/1993 | EP0543616A2 A capacitor and method for making a capacitor |
| 05/26/1993 | EP0543392A2 Diamond semiconductor device and method of producing the same |
| 05/26/1993 | EP0543313A1 Field effect transistor having back gate held in contact with source electrode without variation in source contact resistance |
| 05/26/1993 | EP0543268A2 Transistor device with a gate structure and method of forming the same |
| 05/26/1993 | EP0543257A2 Method of manufacturing a power-MISFET |
| 05/26/1993 | EP0543223A2 Method of forming shallow junctions in field effect transistors |
| 05/26/1993 | EP0543158A2 Method of conducting strap formation in a semiconductor device |
| 05/26/1993 | EP0542983A1 SHALLOW OHMIC CONTACTS TO n-AlxGa(1-x)As |
| 05/26/1993 | CN1020991C Isolation method of semiconductor device |
| 05/25/1993 | US5214683 Charge detecting device controlling reset transistor operation |
| 05/25/1993 | US5214606 Non-volatile semiconductor memory and method for driving the same |
| 05/25/1993 | US5214496 Semiconductor memory |
| 05/25/1993 | US5214304 Multilayer insulating films and polycrystalline silicon films |
| 05/25/1993 | US5214302 Semiconductor integrated circuit device forming on a common substrate MISFETs isolated by a field oxide and bipolar transistors isolated by a groove |
| 05/25/1993 | US5214301 Field effect transistor having control and current electrodes positioned at a planar elevated surface |
| 05/25/1993 | US5214298 Complementary heterostructure field effect transistors |
| 05/25/1993 | US5214297 High-speed semiconductor device |
| 05/25/1993 | US5214296 Thin-film semiconductor device and method of fabricating the same |
| 05/25/1993 | US5214003 Multilayer semiconductor oxide layer formed by oxidation a substrate in an ampoule and heating |
| 05/25/1993 | US5213994 Method of making high voltage semiconductor device |
| 05/25/1993 | US5213991 Method of manufacturing semiconductor device |
| 05/25/1993 | US5213990 Multilayer transistors formed by vapor deposition, channels and patterns |
| 05/25/1993 | US5213988 Method of manufacturing bipolar transistor with self-aligned base regions |
| 05/25/1993 | US5213987 Method of integrating heterojunction bipolar transistors with PIN diodes |
| 05/25/1993 | US5213983 Method for the preparation of electronic and electro-optical components and circuits using conductive polymers |
| 05/25/1993 | US5213906 Composite material comprising a layer of a iii-v compound and a layer of rare earth pnictide, production process and application |
| 05/25/1993 | CA1318418C Heterostructure bipolar transistor |
| 05/25/1993 | CA1318417C Polycrystalline or microcrystalline thin film transistor |
| 05/25/1993 | CA1318152C Flow sensors |
| 05/19/1993 | EP0542648A1 Overvoltage protection semiconductor component |
| 05/19/1993 | EP0542575A2 Method for fabricating a semiconductor memory device having a floating gate with improved insulation film quality |