| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/06/1993 | US5225895 Velocity-modulation transistor with quantum well wire layer |
| 07/06/1993 | US5225708 Semiconductor junction capacitance element with breakdown voltage protection |
| 07/06/1993 | US5225707 Insulated via hole structure for semiconductor devices |
| 07/06/1993 | US5225705 Semiconductor stress sensor mesfet or mesfet array |
| 07/06/1993 | US5225703 Dual field effect transistor structure employing a single source region |
| 07/06/1993 | US5225701 Vertical silicon-on-insulator (SOI) MOS type field effect transistor |
| 07/06/1993 | US5225700 Circuit and method for forming a non-volatile memory cell |
| 07/06/1993 | US5225369 Doping first layer if indium gallium arsenide sith silicon and a second layer with beryllium |
| 07/06/1993 | US5225364 Method of fabricating a thin-film transistor matrix for an active matrix display panel |
| 07/06/1993 | US5225362 Method of manufacturing a full feature high density EEPROM cell with poly tunnel spacer |
| 07/06/1993 | US5225361 Forming a second gate insulating film resistant to electrical breakdown |
| 07/06/1993 | US5225360 Refractory binder such as silicon formed on substrate and metal with low resistance deposited |
| 07/06/1993 | US5225359 Forming a layer of intrinsic polysilicon separating a metal silicide layer from a n conductivity region |
| 07/06/1993 | US5225356 Formed on an insulating layer |
| 07/06/1993 | US5225286 Tantalum oxide with yttrium oxide, tungsten oxide and niobium oxide |
| 07/01/1993 | DE4244115A1 Semiconductor device - comprises silicon@ layer, and foreign atom layer contg. boron ions |
| 06/30/1993 | EP0549373A1 Tunnel transistor and method of manufacturing same |
| 06/30/1993 | EP0549320A1 Method and apparatus for ESD protection |
| 06/30/1993 | EP0549199A2 Method of forming silicide in integrated circuit manufacture |
| 06/30/1993 | EP0549168A2 Transistor fabrication method |
| 06/30/1993 | EP0549055A2 Method of manufacturing a semiconductor device provided with a field effect transistor, and such a semiconductor device |
| 06/30/1993 | EP0549042A2 Improved high voltage thin film transistor having a drift region with a linear doping profile and a field plate |
| 06/30/1993 | EP0548907A2 Piezoresistive force transducer |
| 06/30/1993 | EP0548351A1 Method for producing integrated circuits having adjacent electrodes, and corresponding integrated circuits |
| 06/30/1993 | CN1073806A Thin-film-transistor for semiconductor memory device and fabricating method thereof |
| 06/30/1993 | CN1073805A Manufacturing method of electrostatic induction thyratron transistor and its device |
| 06/29/1993 | US5224134 Charge transfer device having circuit for adjusting the high level of the reset pulse |
| 06/29/1993 | US5223732 Insulated gate semiconductor device with reduced based-to-source electrode short |
| 06/29/1993 | US5223731 EPROM cell using trench isolation to provide leak current immunity |
| 06/29/1993 | US5223727 Charge-coupled device having an improved electrode structure |
| 06/29/1993 | US5223725 Charge transfer device equipped with junction type output transistor improved in sensitivity to charge packet |
| 06/29/1993 | US5223724 Multiple channel high electron mobility transistor |
| 06/29/1993 | US5223723 Light emitting device |
| 06/29/1993 | US5223458 Method of manufacturing a III-V semiconductor device using a self-biased substrate and a plasma containing an electronegative species |
| 06/29/1993 | US5223442 Method of making a semiconductor device of a high withstand voltage |
| 06/29/1993 | US5223086 Method of producing an acceleration sensor of a semiconductor |
| 06/29/1993 | CA2011235C Method of forming contacts to a semiconductor device |
| 06/29/1993 | CA2010298C Thin film transistor |
| 06/24/1993 | WO1993012545A1 Vertical insulated gate semiconductor device and method for its manufacture |
| 06/24/1993 | WO1993012544A1 Scr protection structure and circuit with reduced trigger voltage |
| 06/24/1993 | WO1993012542A1 Layered superlattice material applications |
| 06/24/1993 | WO1993012541A1 External temperature-independent heterojunction bipolar transistor and associated integrated circuit |
| 06/24/1993 | WO1993012538A1 Process for fabricating layered superlattice materials |
| 06/24/1993 | WO1993012410A1 Piezoresistive silicon pressure sensor design |
| 06/24/1993 | DE4243066A1 Signal charge transfer device for CCD or contact image sensor - with multistep impurity zone under each 2nd electrode for high charge transfer efficiency without shortening electrode |
| 06/24/1993 | DE4242578A1 Emitter switched thyristor - has transistor zone with alternative diffusion layers and diffusion zone formed above insulating film |
| 06/24/1993 | DE4142664A1 Planar power semiconductor with protective ring structure - has two concentric rings obtained by diffusion process with doping concentration increasing moving inwards from outside |
| 06/24/1993 | DE4142654A1 P-channel or N-channel permeable base transistor - has screen-type laterally structured layer for controlling space charge zone |
| 06/24/1993 | DE4142595A1 P-channel or N-channel permeable base transistor - has laterally structured base layer forming part of PN junction acting as controlled charge zone |
| 06/23/1993 | EP0547907A2 Method of forming a gate overlap LDD structure |
| 06/23/1993 | EP0547902A2 Epitaxial method for fabricating semiconductor devices and semiconductor devices fabricated by that method |
| 06/23/1993 | EP0547884A1 Method of selectively etching a metal oxide on a material including Tantalum |
| 06/23/1993 | EP0547711A2 Electrically erasable and programmable read-only memory with source and drain regions along sidewalls of a trench structure |
| 06/23/1993 | EP0547675A2 Zener diode with reference diode and protective diode |
| 06/23/1993 | EP0547177A1 Photon stimulated variable capacitance effect devices |
| 06/22/1993 | US5221857 Bipolar transistor structure with polycrystalline resistor layer |
| 06/22/1993 | US5221856 Bipolar transistor with floating guard region under extrinsic base |
| 06/22/1993 | US5221855 Monolithic vertical-type semiconductor power device with a protection against parasitic currents |
| 06/22/1993 | US5221852 Charge coupled device and method of producing the same |
| 06/22/1993 | US5221850 Conductivity-modulating mosfet |
| 06/22/1993 | US5221849 Semiconductor device with active quantum well gate |
| 06/22/1993 | US5221638 Method of manufacturing a Schottky barrier semiconductor device |
| 06/22/1993 | US5221637 Mesa release and deposition (MRD) method for stress relief in heteroepitaxially grown GaAs on Si |
| 06/22/1993 | US5221635 P-type semiconductor substrate which is barrier between two n-type regions |
| 06/22/1993 | US5221631 Method of fabricating a thin film transistor having a silicon carbide buffer layer |
| 06/22/1993 | US5221630 Using gate electrode as mask |
| 06/22/1993 | US5221367 Strained defect-free epitaxial mismatched heterostructures and method of fabrication |
| 06/16/1993 | EP0547030A2 Step-cut insulated gate static induction transistors and method of manufacturing the same |
| 06/16/1993 | EP0546919A1 Heterojunction bipolar transistor insensitive to external temperature variation and associated integrated circuit |
| 06/16/1993 | EP0546665A2 Organic electric-field switching device |
| 06/16/1993 | EP0546377A2 Semiconductor device with improved breakdown voltage characteristics |
| 06/16/1993 | EP0546353A2 Method for forming thin oxide portions particularly in electrically erasable and programmable read-only memory cells |
| 06/16/1993 | CN1073300A Semiconductor device and method for forming the same |
| 06/15/1993 | US5220587 Output circuit for a CCD with a D.C. restoration circuit integrated together with the CCD in a monolithic semiconductor chip |
| 06/15/1993 | US5220483 Tri-level capacitor structure in switched-capacitor filter |
| 06/15/1993 | US5220482 Thin film capacitor |
| 06/15/1993 | US5220305 Semiconductor pressure sensor |
| 06/15/1993 | US5220194 Tunable capacitor with RF-DC isolation |
| 06/15/1993 | US5220193 Variable-capacitance diode device with common electrode |
| 06/15/1993 | US5220192 Radiation hardened CMOS structure using an implanted P guard structure and method for the manufacture thereof |
| 06/15/1993 | US5220191 Semiconductor device having a well electrically insulated from the substrate |
| 06/15/1993 | US5220190 Device having a charge transfer device, MOSFETs, and bipolar transistors--al |
| 06/15/1993 | US5220186 Semiconductor device with a mushroom-shaped gate electrode |
| 06/15/1993 | US5220185 Ccd shift register |
| 06/15/1993 | US5220182 Semiconductor device having conductive sidewall structure between adjacent elements |
| 06/15/1993 | US5219784 Spacer formation in a bicmos device |
| 06/15/1993 | US5219777 Metal oxide semiconductor field effect transistor and method of making the same |
| 06/15/1993 | US5219775 Manufacturing method for a floating gate semiconductor memory device by forming cell slits |
| 06/15/1993 | US5219773 Method of making reoxidized nitrided oxide MOSFETs |
| 06/15/1993 | US5219772 Method for making field effect devices with ultra-short gates |
| 06/15/1993 | US5219770 Method for fabricating a MISFET including a common contact window |
| 06/15/1993 | US5219769 Method for forming Schottky diode |
| 06/15/1993 | US5219768 Method for fabricating a semiconductor device |
| 06/15/1993 | US5219767 Low temperaure molecular beam epitaxial growth; high concentration of dopes |
| 06/15/1993 | CA2006745C Cross-point lightly-doped drain-source trench transistor and fabrication process therefor |
| 06/10/1993 | WO1993011568A1 An integrated electronic shutter for charge-coupled devices |
| 06/10/1993 | WO1993011567A1 Power fet with shielded channels |
| 06/10/1993 | WO1993011566A1 Power semiconductor component of the field effect transistor type, particularly a heterojunction transistor |
| 06/10/1993 | WO1993011562A1 Method of making semiconductor components with electrochemical recovery of the substrate |
| 06/10/1993 | WO1993011561A1 Process for manufacturing a power integrated circuit with a vertical power component |