| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 08/03/1993 | US5232873 Method of fabricating contacts for semiconductor devices |
| 08/03/1993 | US5232866 Isolated films using an air dielectric |
| 08/03/1993 | US5232862 Method of fabricating a transistor having a cubic boron nitride layer |
| 08/03/1993 | US5232861 Method of manufacturing semiconductor device including a bipolar transistor |
| 08/03/1993 | US5231879 Semiconductor acceleration detecting apparatus |
| 08/03/1993 | CA1320847C Absolute pressure transducer and method for making same |
| 07/29/1993 | DE4219575A1 Encapsulated pressure sensing semiconducting device - contains sensor element with membrane in resin capsule with section removed to form membrane access window |
| 07/28/1993 | EP0553006A2 Process for manufacturing a transistor |
| 07/28/1993 | EP0552905A1 Triac |
| 07/28/1993 | EP0552763A2 Compound semiconductor device with self-aligned gate and method of producing this compound semiconductor device |
| 07/28/1993 | EP0552697A2 An SOI lateral bipolar transistor with a polysilicon emitter |
| 07/28/1993 | EP0552561A2 Method of fabricating an ultra-thin active region for high speed semiconductor devices |
| 07/28/1993 | EP0552445A2 Field effect transistor |
| 07/28/1993 | EP0552159A1 OHMIC CONTACT FOR P-TYPE GaAs |
| 07/28/1993 | EP0296246B1 Semiconductor device and method of fabricating the same |
| 07/28/1993 | EP0292529B1 Optical reading of quantum well device |
| 07/28/1993 | EP0289534B1 Process for forming mos integrated circuit devices |
| 07/28/1993 | EP0179914B1 Liquid crystal display element and a method of producing the same |
| 07/27/1993 | US5231474 Semiconductor device with doped electrical breakdown control region |
| 07/27/1993 | US5231302 Semiconductor device including an oblique surface and an electrode crossing the oblique surface |
| 07/27/1993 | US5231299 Structure and fabrication method for EEPROM memory cell with selective channel implants |
| 07/27/1993 | US5231297 Thin film transistor |
| 07/27/1993 | US5231296 Thin film transistor structure with insulating mask |
| 07/27/1993 | US5231041 Manufacturing method of an electrically programmable non-volatile memory device having the floating gate extending over the control gate |
| 07/27/1993 | US5231040 Method of making a field effect transistor |
| 07/27/1993 | US5231038 Method of producing field effect transistor |
| 07/27/1993 | US5231037 Method of making a power VFET device using a p+ carbon doped gate layer |
| 07/27/1993 | US5230747 Wafer having chamfered bend portions in the joint regions between the contour of the wafer and the cut-away portion of the wafer |
| 07/27/1993 | CA2024640C Bicmos process |
| 07/22/1993 | WO1993014522A1 Semiconductor structure with one or more lateral highly blocking semiconductor components |
| 07/22/1993 | WO1993014521A1 Eeprom with split gate source side injection |
| 07/22/1993 | WO1993014519A1 Gto module with stacked bypass diode |
| 07/22/1993 | WO1992017906A3 Graded collector for inductive loads |
| 07/22/1993 | CA2104971A1 Gto module with piggyback bypass diode |
| 07/21/1993 | EP0552067A2 Field effect transistor and a fabricating method thereof |
| 07/21/1993 | EP0551940A2 A semiconductor device comprising a multigate MOSFET |
| 07/21/1993 | EP0551886A2 Junction field effect transistor and method of fabricating |
| 07/21/1993 | EP0551857A2 Mixer circuit using pulse-doped GaAs MESFET |
| 07/21/1993 | EP0551728A2 Electrically reprogrammable EPROM cell with merged transistor and optimum area |
| 07/21/1993 | EP0551721A2 Gallium nitride base semiconductor device and method of fabricating the same |
| 07/21/1993 | EP0551712A2 Semiconductor device with field plates |
| 07/21/1993 | EP0551625A1 Power diode |
| 07/21/1993 | EP0551569A1 MOS composite static induction thyristor |
| 07/21/1993 | EP0551323A1 Field-assisted bonding |
| 07/20/1993 | US5229644 Thin film transistor having a transparent electrode and substrate |
| 07/20/1993 | US5229637 Semiconductor device |
| 07/20/1993 | US5229636 Negative effective mass semiconductor device and circuit |
| 07/20/1993 | US5229634 Vertical power mosfet |
| 07/20/1993 | US5229633 High voltage lateral enhancement IGFET |
| 07/20/1993 | US5229632 Electrically erasable memory device having erase-electrode connected to substrate junction |
| 07/20/1993 | US5229630 Charge transfer and/or amplifying device of low noise to detect signal charges at a high conversion efficiency |
| 07/20/1993 | US5229625 Boron-doped resistant silicon carbide layer on a silicon substrate, single crystal |
| 07/20/1993 | US5229322 Method of making low resistance substrate or buried layer contact |
| 07/20/1993 | US5229320 Method for forming quantum dots |
| 07/20/1993 | US5229314 Method of manufacturing field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulation |
| 07/20/1993 | US5229313 Forming second electrode region serving as upper layer electrode region on second semiconductor region, forming insulating film on first electrode serving as underlayer electrode region, second region contacts second semiconductor |
| 07/20/1993 | US5229312 Nonvolatile trench memory device and self-aligned method for making such a device |
| 07/20/1993 | US5229311 Method of reducing hot-electron degradation in semiconductor devices |
| 07/20/1993 | US5229310 Method for making a self-aligned vertical thin-film transistor in a semiconductor device |
| 07/20/1993 | US5229309 Method of manufacturing semiconductor device using a ferroelectric film over a source region |
| 07/16/1993 | CA2086211A1 Field effect transistor and method of fabricating |
| 07/15/1993 | DE4243610A1 MOS power transistor with adjustable switching speed - has long meander shaped gate electrode connected to MOS transistors which determine turn on=off time |
| 07/15/1993 | DE4200620A1 Floating gate EEPROM memory cell with sandwich coupling capacitance - has conductive surface zone having same conductivity type as source and drain of floating gate transistor in second zone covered by electrode |
| 07/15/1993 | CA2086981A1 Mixer circuit using pulse-doped gaas mesfet |
| 07/14/1993 | EP0551185A2 Heterojunction bipolar transistor |
| 07/14/1993 | EP0551140A2 Charged coupled device (CCD) having high transfer efficiency at low temperature operation |
| 07/14/1993 | EP0551110A2 Compound semiconductor devices |
| 07/14/1993 | EP0551030A1 Quantum well transistor with resonant tunneling effect |
| 07/14/1993 | EP0550962A2 Heterojunction bipolar transistor |
| 07/14/1993 | EP0550850A2 Monolithically integratable temperature sensor for power semiconductor devices and method of making the same |
| 07/14/1993 | EP0550770A1 Method of producing vertical mosfet |
| 07/14/1993 | EP0550751A1 Nonvolatile semiconductor memory |
| 07/14/1993 | EP0250479B1 Current metering apparatus |
| 07/13/1993 | US5227855 Semiconductor memory device having a ferroelectric substance as a memory element |
| 07/13/1993 | US5227658 Buried air dielectric isolation of silicon islands |
| 07/13/1993 | US5227655 Field effect transistor capable of easily adjusting switching speed thereof |
| 07/13/1993 | US5227653 Lateral trench-gate bipolar transistors |
| 07/13/1993 | US5227651 Semiconductor device having a capacitor with an electrode grown through pinholes |
| 07/13/1993 | US5227650 Charge coupled device delay line employing a floating gate or floating diffusion gate at its intermediate output portion |
| 07/13/1993 | US5227647 Semiconductor switching device |
| 07/13/1993 | US5227644 Heterojunction field effect transistor with improve carrier density and mobility |
| 07/13/1993 | US5227361 Oxide superconducting lead for interconnecting device component with a semiconductor substrate via at least one buffer layer |
| 07/13/1993 | US5227333 Selective etchingof a semiconductor substrate covered by a blanket of germanium and an overcoating of an electroconductive layer |
| 07/13/1993 | US5227329 Method of manufacturing semiconductor device |
| 07/13/1993 | US5227320 Method for producing gate overlapped lightly doped drain (goldd) structure for submicron transistor |
| 07/13/1993 | US5227319 Manufacturing high curcuit integration, high accuracy semiconductors at a high yield |
| 07/13/1993 | US5227315 Process of introduction and diffusion of platinum ions in a slice of silicon |
| 07/13/1993 | US5227006 Method for selectively growing gallium-containing layers |
| 07/08/1993 | WO1993013560A1 Electronic component and process for making it |
| 07/08/1993 | WO1993013559A1 Field effect transistor controlled thyristor having improved turn-on characteristics |
| 07/08/1993 | WO1993013238A1 Vacuum surface treatment apparatus and method |
| 07/08/1993 | DE4300108A1 Semiconductor device with good voltage seizing characteristics - comprises semiconductor region of second conducting type formed in surface of substrate |
| 07/08/1993 | CA2117341A1 Electronic component and process for making it |
| 07/07/1993 | EP0550404A1 A method of making a capacitive coupling device, especially in an EEPROM |
| 07/07/1993 | EP0550317A1 Manufacturing method of hyperfrequency field effect transistors |
| 07/07/1993 | EP0550255A2 Transistor spacer structure |
| 07/07/1993 | EP0550198A1 A semiconductor integrated circuit comprising a protective device |
| 07/07/1993 | EP0550174A2 Process of making a self-aligned contact window in integrated circuits |
| 07/07/1993 | EP0550015A1 Lateral double diffused insulated gate field effect transistor and fabrication process |
| 07/06/1993 | US5226015 Semiconductor memory system |