Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/1993
08/25/1993EP0556904A1 Methods of fabricating thin film structures and structures and display devices produced thereby
08/25/1993EP0556822A2 Reflective type liquid crystal display
08/25/1993EP0556739A1 Gate turn-off thyristor and power convertor using the same
08/25/1993CN1075555A Reflective type liquid crystal display
08/25/1993CN1021943C Schottky junction semi-conductor element
08/24/1993US5239207 Semiconductor integrated circuit
08/24/1993US5239195 Mos transistor with high threshold voltage
08/24/1993US5239192 Horizontal charge transfer register
08/24/1993US5239188 Single crystal of gallium-aluminum-indium nitride; suppresses occurrence of crystal defects; high crystallization; flatness
08/24/1993US5238873 Method for manufacturing semiconductor device having a metallic silicide layer
08/24/1993US5238871 Method of manufacturing a semiconductor device
08/24/1993US5238864 Implanting two different dopant ions with differing diffusion coefficients; produces conductivity regions with varying concentrations of impurities; positioning charge transfer electrode
08/24/1993US5238863 Process for fabricating gate insulating structure of a charge coupled device
08/24/1993US5238861 Method for manufacturing an active matrix display screen with storage capacitors
08/24/1993US5238859 Method of manufacturing semiconductor device
08/24/1993US5238857 Method of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structure
08/19/1993WO1993016491A1 High density electronic circuit modules
08/19/1993DE4240205A1 High breakdown voltage device esp. bipolar transistor - has low impurity concn. link layer between base and external base layers
08/19/1993CA2129123A1 High density electronic circuit modules
08/18/1993EP0556009A2 Method of producing a buried boss diaphragm structure in silicon and product made thereby
08/18/1993EP0555995A2 Monolithic high-voltage capacitor
08/18/1993EP0555907A1 A method of manufacturing a large area active matrix array
08/18/1993EP0555886A2 Hetero-junction field effect transistor
08/18/1993EP0555727A1 Semiconductor accelerometer
08/18/1993EP0555496A1 Lateral bipolar transistor structure including an integrated control circuit and integrated power transistor and associated manufacturing process
08/18/1993EP0464196A4 Single transistor non-volatile electrically alterable semiconductor memory device with a re-crystallized floating gate
08/17/1993US5237528 Semiconductor memory
08/17/1993US5237200 Semiconductor bipolar transistor with concentric regions
08/17/1993US5237198 Lateral PNP transistor using a latch voltage of NPN transistor
08/17/1993US5237196 Semiconductor device and method for manufacturing the same
08/17/1993US5237193 Lightly doped drain MOSFET with reduced on-resistance
08/17/1993US5237192 MESFET semiconductor device having a T-shaped gate electrode
08/17/1993US5237191 Solid-state charge-coupled-device imager
08/17/1993US5237188 Semiconductor device with nitrided gate insulating film
08/17/1993US5237186 Conductivity-modulation metal oxide field effect transistor with single gate structure
08/17/1993US5237183 High reverse voltage IGT
08/17/1993US5236873 Forming a doped polysilicon layer, immersing wafer in electroless plating bath to form metal contact layer and selectively etching mask
08/17/1993US5236872 Method of manufacturing a semiconductor device having a semiconductor body with a buried silicide layer
08/17/1993US5236867 Manufacturing method of contact hole arrangement of a semiconductor device
08/17/1993US5236861 Manufacturing method of metal-insulator-semiconductor device using trench isolation technique
08/17/1993US5236858 Method of manufacturing a semiconductor device with vertically stacked structure
08/17/1993US5236854 Compound semiconductor device and method for fabrication thereof
08/17/1993US5236850 Sputtering in hydrogen atmosphere, crystallization, heating to form semiconductive path, forming current source region and current drain regions
08/17/1993US5236573 Mim devices, their method of fabrication and display devices incorporating such devices
08/17/1993US5236547 Ion implanting by focused iion beam into selected region of film, etching
08/17/1993US5236546 Forming silicon nitride and silicon dioxide films on glass substrate, etching oxide to form concavity, oxidizing nitride and annealing walls, opening oxide film to expose nitride, vapor depositing silicon single crystal, flattening
08/15/1993CA2089398A1 Semiconductor device
08/11/1993EP0555047A2 Semiconductor gated switching device
08/11/1993EP0554893A2 Partially-molded, PCB chip carrier package
08/11/1993EP0554795A1 Semiconductor device substrate and process for preparing the same
08/11/1993EP0554610A1 Charge transfer device having a bent transfer channel
08/10/1993US5235541 Integrated circuit entirely protected against ultraviolet rays
08/10/1993US5235489 Integrated solution to high voltage load dump conditions
08/10/1993US5235448 Liquid crystal display having proportional tft channel width
08/10/1993US5235216 Bipolar transistor using emitter-base reverse bias carrier generation
08/10/1993US5235210 Field effect transistor
08/10/1993US5235206 Vertical bipolar transistor with recessed epitaxially grown intrinsic base region
08/10/1993US5235204 Reverse self-aligned transistor integrated circuit
08/10/1993US5235203 Insulated gate field effect transistor having vertically layered elevated source/drain structure
08/10/1993US5235202 Semiconductor having layer of borophosphosilicate glass over gate electrode
08/10/1993US5235201 Semiconductor device with input protection circuit
08/10/1993US5235200 Semiconductor integrated circuit device
08/10/1993US5235189 Thin film transistor having a self-aligned gate underlying a channel region
08/10/1993US5234857 Growing electroconductive silicon layer through pinholes in dielectric layer for high density packing
08/10/1993US5234853 Method of producing a high voltage MOS transistor
08/10/1993US5234851 Forming gate electrode having windows on doped silicon substrate, forming second window region, masking, forming spaced apart, high conductivity layers in contact with polysilicon within windows, providing dielectric layer
08/10/1993US5234849 Depositing photoresist pattern overcoatings before forming a gate metallization layer in order to reduce current leakage
08/10/1993US5234848 Method for fabricating lateral resonant tunneling transistor with heterojunction barriers
08/10/1993US5234846 Codeposition of polysilicon base contact and epitaxial layer, using doped glass layer as dopant source, dielectric, etch stop
08/10/1993US5234845 Method of manufacturing semiconductor IC using selective poly and EPI silicon growth
08/10/1993US5234844 Process for forming bipolar transistor structure
08/10/1993US5234842 Method of producing p-typed CdS
08/10/1993US5234655 Method of forming a mold
08/10/1993CA1321247C Ecl eprom with cmos programming
08/07/1993CA2088755A1 Semiconductor accelerometer
08/05/1993WO1993015589A1 Single crystal silicon arrayed devices for projection displays
08/05/1993WO1993015524A1 Fermi threshold field effect transistor with reduced gate and diffusion capacitance
08/05/1993WO1993015523A1 Quantum well p-channel field effect transistor, and integrated circuit having complementary transistors
08/05/1993DE4301947A1 Insulated gate bipolar transistor - has high short-circuit resistance and latch-up resistance
08/04/1993EP0554195A1 Auto-protected semi-conductor protection component
08/04/1993EP0554063A1 Semiconductor device and liquid crystal display
08/04/1993EP0553869A2 Method for transferring charge, charge transfer device and solid state image sensing device using the same
08/04/1993EP0553807A1 Semiconductor device having organically doped structure
08/04/1993EP0553775A1 Semiconductor device and manufacturing method of same
08/04/1993EP0553774A1 Semiconductor device and method for producing the same
08/04/1993EP0553725A2 Apparatus and method of manufacture of pressure sensor having a laminated substrate
08/04/1993EP0553589A2 Bipolar transistor with low extrinsic base resistance and low noise
08/04/1993EP0553393A1 Semiconductor device and method for producing the semiconductor device
08/04/1993EP0305513B1 Low leakage cmos/insulator substrate devices and method of forming the same
08/04/1993CN1075030A Mos composite static induction thyristor
08/03/1993US5233313 High power field effect transistor amplifier
08/03/1993US5233224 Electrode having an improved configuration for a semiconductor element
08/03/1993US5233219 Three-dimensional semiconductor device structure
08/03/1993US5233215 Low specific on-resistance
08/03/1993US5233214 Controllable, temperature-compensated voltage limiter
08/03/1993US5233211 Semiconductor device for driving a light valve
08/03/1993US5233210 Non-volatile memory and method for fabricating same
08/03/1993US5233207 MOS semiconductor device formed on insulator
08/03/1993US5233205 Quantum wave circuit
08/03/1993US5232876 Method for manufacturing a silicon layer having increased surface area
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