| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/14/1993 | US5244830 Method for manufacturing a semiconductor substrate having a compound semiconductor layer on a single-crystal silicon wafer |
| 09/14/1993 | US5244828 Method of fabricating a quantum device |
| 09/14/1993 | US5244825 DRAM process with improved poly-to-poly capacitor |
| 09/14/1993 | US5244823 Process for fabricating a semiconductor device |
| 09/14/1993 | US5244822 Method of fabricating bipolar transistor using self-aligned polysilicon technology |
| 09/14/1993 | US5244821 Bipolar fabrication method |
| 09/14/1993 | US5244533 Method of manufacturing bipolar transistor operated at high speed |
| 09/14/1993 | CA1322231C V__ load dump protection circuit |
| 09/09/1993 | DE4306464A1 High voltage bipolar transistor - comprises high resistance collector layer formed on low resistance collector layer |
| 09/09/1993 | DE4306322A1 Layer connecting structure mfr. for semiconductor memory device - filling hole between upper and lower conductive layers with blocking metal film and tungsten film in two-stage process |
| 09/08/1993 | EP0559407A2 Fabricating dual gate thin film transistors |
| 09/08/1993 | EP0559182A2 Semiconductor device |
| 09/08/1993 | EP0559155A1 Charge-to-voltage converter |
| 09/08/1993 | EP0559133A1 Static induction thyristor |
| 09/08/1993 | EP0558953A2 Neural device |
| 09/08/1993 | EP0558554A1 Silicon-on-porous-silicon; method of production and material |
| 09/08/1993 | EP0386119A4 Microelectrochemical devices and method of detecting |
| 09/07/1993 | US5243559 Semiconductor memory device |
| 09/07/1993 | US5243488 Protection circuit limiting overvoltages between two selected limits and its monolithic integration |
| 09/07/1993 | US5243260 Method to produce a display screen with a matrix of transistors provided with an optical mask |
| 09/07/1993 | US5243234 Dual gate LDMOSFET device for reducing on state resistance |
| 09/07/1993 | US5243213 Mis semiconductor device formed by utilizing soi substrate having a semiconductor thin film formed on a substrate through an insulating layer |
| 09/07/1993 | US5243212 Transistor with a charge induced drain extension |
| 09/07/1993 | US5243211 Power fet with shielded channels |
| 09/07/1993 | US5243210 Semiconductor memory device and manufacturing method thereof |
| 09/07/1993 | US5243209 Semiconductor memory device including junction field effect transistor and capacitor and method of manufacturing the same |
| 09/07/1993 | US5243205 Semiconductor device with overvoltage protective function |
| 09/07/1993 | US5243202 Aluminum-titanium, semiconductors |
| 09/07/1993 | US5243201 Mos-controlled thyristor mct |
| 09/07/1993 | US5243199 High frequency device |
| 09/07/1993 | US5243198 Semiconductor resonant tunneling device with thick layer |
| 09/07/1993 | US5242862 Semiconductor device and method of manufacturing same |
| 09/07/1993 | US5242859 Exposing semiconductor surface to gas mixture containing an inert carrier and a dopant having specified volume and pressure |
| 09/07/1993 | US5242854 High performance semiconductor devices and their manufacture |
| 09/07/1993 | US5242849 Method for the fabrication of MOS devices |
| 09/07/1993 | US5242848 Self-aligned method of making a split gate single transistor non-volatile electrically alterable semiconductor memory device |
| 09/07/1993 | US5242846 High frequency, semiconductors |
| 09/07/1993 | US5242845 Method of production of vertical MOS transistor |
| 09/07/1993 | US5242844 Depositing a polycrystalline silicon film on a glass substrate to a specified thickness and forming a gate electrtode on film to produce a field effect transistor |
| 09/07/1993 | US5242843 Semiconductors) |
| 09/07/1993 | US5242841 Method of making LDMOS transistor with self-aligned source/backgate and photo-aligned gate |
| 09/07/1993 | US5242543 Wet etching method for forming metal film pattern having tapered edges |
| 09/07/1993 | US5242533 Passivation and masking then applying voltage and etching |
| 09/07/1993 | US5241864 Double pinned sensor utilizing a tensile film |
| 09/07/1993 | CA1322045C Charge injection device with low noise readout |
| 09/07/1993 | CA1322040C2 Epitaxial gallium arsenide semiconductor wafer and method of producing the same |
| 09/06/1993 | WO1993018531A1 Crystallographically aligned ferroelectric films usable in memories and method of making |
| 09/04/1993 | CA2090789A1 Semiconductor device |
| 09/02/1993 | WO1993017461A1 Bipolar junction transistor exhibiting suppressed kirk effect |
| 09/02/1993 | WO1993017460A1 Improved method for forming pnp and npn bipolar transistor in a same substrate |
| 09/02/1993 | WO1993017458A1 Soi-type semiconductor device and method of producing the same |
| 09/02/1993 | WO1993017449A1 Semiconductor with ordered clusters and laser ablation method for the fabrication thereof |
| 09/02/1993 | DE4305849A1 Non-volatile storage device - comprises storage cell and central storage unit having UV impermeable resin layer |
| 09/02/1993 | DE4206174A1 Integrated sensor for pressure or acceleration measurement - is constructed exclusively from silicon@ in form of spring-mass system with errors due to differential thermal expansion eliminated |
| 09/02/1993 | DE4206173A1 Prodn. of micro-mechanical components - by chemically pretreating silicon@ wafers, placing on each other, and heating |
| 09/02/1993 | CA2124843A1 Bipolar junction transistor exhibiting suppressed kirk effect |
| 09/01/1993 | EP0558404A2 Single transistor flash electrically programmable memory |
| 09/01/1993 | EP0558401A1 Manufacturing method for thin film transistor with double gate and optical mask |
| 09/01/1993 | EP0558229A2 Article comprising a real space transfer semiconductor device, and method of making the article |
| 09/01/1993 | EP0558100A2 Bipolar transistor |
| 09/01/1993 | EP0558075A2 Polysilicon thin film semiconductor device |
| 09/01/1993 | EP0558011A2 High electron mobility transistor |
| 09/01/1993 | EP0558007A2 Semiconductor apparatus having excellent contact characteristics |
| 09/01/1993 | EP0558004A2 Refractory metal capped low resistivity metal conductor lines and vias |
| 09/01/1993 | EP0557937A1 Ozone gas processing for ferroelectric memory circuits |
| 09/01/1993 | EP0557705A2 Fabrication of lateral bipolar transistor |
| 09/01/1993 | EP0557581A2 Non-volatile DRAM cell |
| 09/01/1993 | EP0557514A1 Self-aligned thin film transistors in an active matrix array |
| 08/31/1993 | US5241499 Non-volatile split gate eprom memory cell and self-aligned field insulation process for obtaining the above cell |
| 08/31/1993 | US5241498 Non-volatile semiconductor memory device |
| 08/31/1993 | US5241377 Compact imager including a plurality of photodiode arrays |
| 08/31/1993 | US5241214 Oxides and nitrides of metastabale group iv alloys and nitrides of group iv elements and semiconductor devices formed thereof |
| 08/31/1993 | US5241213 Buried zener diode having auxiliary zener junction access path |
| 08/31/1993 | US5241210 High breakdown voltage semiconductor device |
| 08/31/1993 | US5241208 Semiconductor device comprising an analogue element and a digital element |
| 08/31/1993 | US5241207 Semiconductor device having an interconnected film with tapered edge |
| 08/31/1993 | US5241203 Inverse T-gate FET transistor with lightly doped source and drain region |
| 08/31/1993 | US5241202 Cell structure for a programmable read only memory device |
| 08/31/1993 | US5241199 Charge coupled device (CCD) having high transfer efficiency at low temperature operation |
| 08/31/1993 | US5241197 Transistor provided with strained germanium layer |
| 08/31/1993 | US5241195 Merged P-I-N/Schottky power rectifier having extended P-I-N junction |
| 08/31/1993 | US5241194 Base resistance controlled thyristor with integrated single-polarity gate control |
| 08/31/1993 | US5241193 Semiconductor device having a thin-film transistor and process |
| 08/31/1993 | US5241192 Fabrication method for a self-aligned thin film transistor having reduced end leakage and device formed thereby |
| 08/31/1993 | US5241190 Apparatus for contacting closely spaced quantum wells and resulting devices |
| 08/31/1993 | US5240877 Process for manufacturing an ohmic electrode for n-type cubic boron nitride |
| 08/31/1993 | US5240876 Method of fabricating SOI wafer with SiGe as an etchback film in a BESOI process |
| 08/31/1993 | US5240873 Method of making charge transfer device |
| 08/31/1993 | US5240869 Forming a T-shaped gate electrode in a stepped recess |
| 08/31/1993 | US5240868 Flattening by anodic oxidation |
| 08/31/1993 | US5240867 Semiconductor integrated circuit having interconnection with improved design flexibility, and method of production |
| 08/31/1993 | US5240865 Method of forming a thyristor on an SOI substrate |
| 08/31/1993 | US5240762 Organic thin film element |
| 08/31/1993 | US5239870 Semiconductor acceleration sensor with reduced cross axial sensitivity |
| 08/26/1993 | DE4240738A1 Bipolar transistor prodn. for long service life - by forming base in surface of substrate, short term temp. adjusting, and forming emitter |
| 08/25/1993 | EP0557253A2 VDMOS transistor with improved breakdown characteristics |
| 08/25/1993 | EP0557152A1 Process for manufacturing active structures and semi-conductor devices thus obtained |
| 08/25/1993 | EP0557126A1 Power semiconductor device |
| 08/25/1993 | EP0556989A1 Liquid crystal display device |
| 08/25/1993 | EP0556912A2 Rapid plasma hydrogenation process for polysilicon MOSFET's |