Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/1993
10/05/1993US5250453 Narrow refractory metal gate
10/05/1993US5250452 Deposition of germanium thin films on silicon dioxide employing interposed polysilicon layer
10/05/1993US5250451 Passivation of substrate by hydrogenated amorphous carbon layer
10/05/1993US5250450 Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance
10/05/1993US5250449 Vertical type semiconductor device and method for producing the same
10/05/1993US5250448 Method of fabricating a miniaturized heterojunction bipolar transistor
10/05/1993US5250447 Semiconductor device and method of manufacturing the same
10/05/1993US5250446 Method of manufacturing a semiconductor device by forming at least three regions of different lifetimes of carriers at different depths
10/05/1993US5250444 Rapid plasma hydrogenation process for polysilicon MOSFETs
10/05/1993US5250341 IC card
10/05/1993US5249414 Composite yarn resistant to twisting
09/1993
09/30/1993WO1993019490A1 Voltage regulating diode
09/30/1993WO1993019482A1 Threshold adjustment in vertical dmos devices
09/30/1993WO1993019343A1 Micromechanical sensor
09/30/1993DE4308705A1 Integrated circuit device with non-rectangular semiconductor chip - has inner contact points bordering on chip in configuration which corresponds to chip configuration
09/30/1993DE4244436A1 Semiconductor device with high max. controllable current and prodn. - without impairing other properties, useful as emitter switched thyristor
09/30/1993DE4220284C1 Cutting method for dicing multilayer wafers into individual chips - using two blades of material and thickness matched to substrate on each side
09/30/1993DE4210071A1 MOS controlled thyristor - has DMOS cells between MCT cells for MOS controlled short circuits, which do not function as emitters when component is in stationary, conducting state
09/30/1993DE4209983A1 Semiconductor component mfr. esp. IMPATT diode prodn. - producing component, housing and connection contacts in integrated construction from and on semiconductor substrate
09/29/1993EP0562982A1 Integrated circuit comprising a network of protection diodes
09/29/1993EP0562751A2 Logic device
09/29/1993EP0562623A2 Method of manufacturing non-single crystal film and non-single crystal semiconductor device
09/29/1993EP0562551A2 Heterojunction field effect transistor
09/29/1993EP0562549A2 Heterojunction bipolar transistor containing silicon carbide
09/29/1993EP0562352A2 High voltage structures with oxide isolated source and RESURF drift region in bulk silicon
09/29/1993EP0562307A2 Trench EEPROM cell
09/29/1993EP0562299A1 Structure and fabrication method for EEPROM memory cell with selective channel implants
09/29/1993EP0562272A2 Microwave heterojunction bipolar transistors with emitters designed for high power applications and method for fabricating same
09/29/1993EP0562271A1 High voltage structure with oxide isolated source and resurf drift region in bulk silicon
09/29/1993EP0562257A1 Three-dimensional direct-write EEPROM arrays and fabrication methods
09/29/1993EP0562217A1 Lateral bipolar transistor with a low current leakage toward the substrate
09/29/1993EP0562207A1 Method of forming thin film pseudo-planar PFET devices and structures resulting therefrom
09/29/1993EP0562101A1 Voltage variable capacitor having amorphous dielectric film
09/28/1993US5249055 Solid-state imaging apparatus including external charge input terminal
09/28/1993US5248948 Oscillating circuit device with a variable capacitor
09/28/1993US5248893 Insulated gate field effect device with a smoothly curved depletion boundary in the vicinity of the channel-free zone
09/28/1993US5248630 Thin film silicon semiconductor device and process for producing thereof
09/28/1993US5248627 Semiconductors
09/28/1993US5248626 Method for fabricating self-aligned gate diffused junction field effect transistor
09/28/1993US5248624 Semiconductors
09/28/1993US5248623 Method for making a polycrystalline diode having high breakdown
09/28/1993US5248622 Multilayer
09/28/1993US5248564 Ferroelectric
09/28/1993US5248347 Multilayer
09/25/1993CA2092215A1 Semiconductor device
09/24/1993CA2091926A1 Semiconductor device
09/23/1993DE4307753A1 Semiconducting stress or load sensing device - contains reference voltage source for compensating temp. coefficient of strain gauge bridge circuit connected to operational amplifier circuit
09/22/1993EP0561721A1 Switch for alternating tensions
09/22/1993EP0561580A2 Charge carrier flow control device
09/22/1993EP0561567A2 Alloys containing gallium and aluminum as semiconductor electrical contacts
09/22/1993EP0561462A2 Manufacturing electronic devices comprising, e.g., TFTs and MIMs
09/22/1993EP0561461A2 A semiconductor switch and a temperature sensing circuit for such a switch
09/22/1993EP0561267A2 Insulated gate semiconductor device and method of fabricating same
09/22/1993EP0523223A4 Power metal-oxide-semiconductor field effect transistor
09/22/1993EP0248883B1 Selective deposition process
09/22/1993CN1076551A Semiconductor unit with multi-crystallic silicon
09/22/1993CN1076547A Refractory metal capped low resisitivity metal conductor lines and vias
09/21/1993US5247554 Charge detection circuit
09/21/1993US5247349 Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure
09/21/1993US5247346 E2 PROM cell array including single charge emitting means per row
09/21/1993US5247230 Unilateral diac for motor speed control
09/21/1993US5247203 Semiconductor device mounted on a heat sink with an intervening amorphous semiconductor material
09/21/1993US5247194 Thin film transistor with an increased switching rate
09/21/1993US5247192 Polycrystalline silicon is sandwiched between silicon carbide conductive layers; high speed, quality
09/21/1993US5247191 Semiconductor device
09/21/1993US5246886 Process for depositing a silicon-containing polycrystalline film on a substrate by way of growing Ge-crystalline nucleus
09/21/1993US5246878 Capping layer preventing deleterious effects of As--P exchange
09/21/1993US5246874 Method of making fast access AMG EPROM
09/21/1993US5246870 Method for making an improved high voltage thin film transistor having a linear doping profile
09/16/1993WO1993018552A1 Circuit construction for controlling saturation of a transistor
09/16/1993WO1993018551A1 Quantum well structures useful for semiconducting devices
09/16/1993WO1993018550A1 A circuit construction for protective biasing
09/16/1993WO1993018519A1 Electrically programmable memory cell
09/16/1993WO1993018518A1 A floating gate memory array device having improved immunity to write disturbance
09/16/1993WO1993018428A2 Head-mounted display system
09/16/1993DE4207225A1 Integrated circuit state equaliser eg for sensor - has control for rendering equalising path conductive using Zener diode or discharge and thyristor circuit
09/16/1993CA2130672A1 Head-mounted display system
09/15/1993EP0560575A1 Method of etching a poysilicon film on a microcrystalline silicon substrate
09/15/1993EP0560531A1 Method for manufacturing a liquid crystal display device
09/15/1993EP0560435A2 Method of manufacturing a floating gate transistor with tunnel oxide and semiconductor device manufactured by such a method
09/15/1993EP0560123A2 Power transistor with multiple finger contacts
09/15/1993EP0560069A1 Shadow RAM cell having a shallow trench EEPROM
09/15/1993EP0559945A1 Turn-off power semi-conductor device
09/15/1993EP0559910A1 Insulated-gate bipolar transistor
09/15/1993EP0278585B1 Packaged solid state surge protector
09/15/1993CN1022148C Protective arrangement for MOS circuit
09/14/1993US5245505 Capacitor element
09/14/1993US5245499 Monolithic overvoltage protection device
09/14/1993US5245452 Active matric drive liquid crystal display device using polycrystalline silicon pixel electrodes
09/14/1993US5245261 Temperature compensated overcurrent and undercurrent detector
09/14/1993US5245212 Self-aligned field-plate isolation between active elements
09/14/1993US5245211 Device for the protection against breakdown of an n+ type diffused region inserted in vertical-type semiconductor integrated power structure
09/14/1993US5245210 MOS type semiconductor device
09/14/1993US5245208 Semiconductor device and manufacturing method thereof
09/14/1993US5245207 Integrated circuit
09/14/1993US5245206 Comprising germanium, gallium arsenide or metal silicides as crystalline material
09/14/1993US5245204 Semiconductor device for use in an improved image pickup apparatus
09/14/1993US5245202 Conductivity modulation type misfet and a control circuit thereof
09/14/1993US5244843 Process for forming a thin oxide layer
09/14/1993US5244832 Method for fabricating a poly emitter logic array and apparatus produced thereby
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