Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/1993
10/26/1993US5257095 Common geometry high voltage tolerant long channel and high speed short channel field effect transistors
10/26/1993US5257005 Small value precision integrated circuit resistors
10/26/1993US5256898 Semiconductor device with a different epitaxial thickness between adjacent circuit regions
10/26/1993US5256896 Polysilicon-collector-on-insulator polysilicon-emitter bipolar transistor
10/26/1993US5256894 Semiconductor device having variable impurity concentration polysilicon layer
10/26/1993US5256893 Semiconductor integrated circuit device with power MOSFET incorporated
10/26/1993US5256889 Semiconductor rectifying diode with PN geometry
10/26/1993US5256888 Transistor device apparatus employing free-space electron emission from a diamond material surface
10/26/1993US5256589 Method of improving the flatness of wiring layer
10/26/1993US5256586 Gate-to-drain overlapped MOS transistor fabrication process
10/26/1993US5256585 Process for fabricating a gate-drain overlapped semiconductor
10/26/1993US5256584 Stacking conductors and nonconductors
10/26/1993US5256583 Mask surrogate semiconductor process with polysilicon gate protection
10/26/1993US5256562 Array of thin film transistors on silicon substrate; cutting, tilting to transfer module body
10/23/1993CA2094522A1 Liquid crystal display device
10/20/1993EP0566337A2 Matrix type surface pressure distribution detecting element
10/20/1993EP0566336A2 Semiconductor matrix type sensor for very small surface pressure distribution
10/20/1993EP0566262A2 Field effect transistor with a deep P body contacted by the source electrode
10/20/1993EP0566187A2 Non-volatile trench memory device and self-aligned method for making such a device
10/20/1993EP0566183A1 Semiconductor device
10/20/1993EP0566179A1 A semiconductor component including protection means
10/20/1993EP0566129A1 Charge transfer apparatus
10/20/1993EP0566117A1 charge transfer image pick-up device
10/20/1993EP0566112A2 Hetero bipolar transistor and method of manufacturing the same
10/20/1993EP0565808A1 Junction-isolated high voltage MOS integrated device
10/20/1993EP0565807A1 MOS power transistor device
10/20/1993EP0565588A1 Single crystal silicon arrayed devices for display panels
10/20/1993CN1077569A Method for local compensating the collecting zone by ion implantation
10/19/1993US5255219 Ultraviolet-erasable type nonvolatile semiconductor memory device having asymmetrical field oxide structure
10/19/1993US5255099 Solid state pickup device with strap line in vertical register
10/19/1993US5254869 Reduced minority carrier injection
10/19/1993US5254867 Laminated insulating film; dielectric constants progresssively increasing; suppression of electric field intensity at lower corner of electrode
10/19/1993US5254865 Semiconductor integrated circuit device employing MOSFETS
10/19/1993US5254863 Semiconductor device such as a high electron mobility transistor
10/19/1993US5254862 Diamond field-effect transistor with a particular boron distribution profile
10/19/1993US5254507 Semi-insulating InP single crystals, semiconductor devices having substrates of the crystals and processes for producing the same
10/19/1993US5254506 Method for the production of silicon oxynitride film where the nitrogen concentration at the wafer-oxynitride interface is 8 atomic precent or less
10/19/1993US5254494 Method of manufacturing a semiconductor device having field oxide regions formed through oxidation
10/19/1993US5254491 Method of making a semiconductor device having improved frequency response
10/19/1993US5254490 Forming, selective etching of refracotyr metal silicides and ) nitrides
10/19/1993US5254488 Easily manufacturable thin film transistor structures
10/19/1993US5254486 Self-alignment of emitter and collector regions; no need to etch away oxide mask of base region due to previous patterning step
10/19/1993US5254484 Method for recrystallization of preamorphized semiconductor surfaces zones
10/19/1993US5254483 Interconnection metallization
10/14/1993WO1993020587A1 Mos structure for reducing snapback
10/14/1993WO1993020583A1 METHOD AND STRUCTURE FOR SUPPRESSING CHARGE LOSS IN EEPROMs/EPROMs AND INSTABILITIES IN SRAM LOAD RESISTORS
10/14/1993DE4311358A1 Flash EEPROM preventing excessive erasure - injects electrons into floating gate of memory cells during erasure and extracts electrons during programming to force cells to enhancement level determined by set voltage
10/14/1993DE4311298A1 Pressure detecting circuit for semiconductor pressure sensor - has differential amplifier stage with zero drift compensation by temp.-dependent difference between base-emitter voltages
10/14/1993DE4238093A1 Acceleration detector with cantilevered mass in viscous liq., e.g. for vehicle - contains block of rubber capable of dilatation or compression to counteract wide variations in ambient temp.
10/14/1993DE4212220A1 Microelectronic component used in electronic circuits - comprises body of cluster mols. connected to electrodes
10/13/1993EP0565435A1 Complementary transistor semiconductor device
10/13/1993EP0565350A2 Semiconductor device with a buffer structure
10/13/1993EP0565349A2 MOS-controlled thyristor
10/13/1993EP0565231A2 Method of fabricating a polysilicon thin film transistor
10/13/1993EP0565179A2 A semiconductor device including protection means
10/13/1993EP0565054A2 N-type antimony-based strained layer superlattice and fabrication method
10/13/1993EP0564897A1 Method for fabricating diodes for electrostatic discharge protection and voltage references
10/13/1993EP0564473A1 Piso electrostatic discharge protection device
10/13/1993EP0564467A1 Circuit for protecting a semiconductor device from voltage produced by discharges of static electricity.
10/12/1993US5253156 Semiconductor integrated circuit unit
10/12/1993US5252868 CMOS amplifier circuit and CCD delay line with CMOS amplifier
10/12/1993US5252849 Transistor useful for further vertical integration and method of formation
10/12/1993US5252848 Low on resistance field effect transistor
10/12/1993US5252847 Low break-down voltage; forming gate electrodes in presence of ethyl acetate and tetrahydrofuran
10/12/1993US5252846 Semiconductor memory device with an improved erroneous write characteristic and erasure characteristic
10/12/1993US5252842 Low-loss semiconductor device and backside etching method for manufacturing same
10/12/1993US5252841 Heterojunction bipolar transistor structure having low base-collector capacitance, and method of fabricating the same
10/12/1993US5252840 Semiconductor device having differently doped diamond layers
10/12/1993US5252502 Method of making MOS VLSI semiconductor device with metal gate
10/12/1993US5252500 Method of fabricating a semiconductor device
10/12/1993US5252143 Semiconductors
10/12/1993US5251485 Gauge resistors
10/08/1993CA2092895A1 Complementary transistor semiconductor device
10/08/1993CA2092050A1 Method for fabricating diodes for electrostatic discharge protection and voltage references
10/07/1993DE4310915A1 Solid state image sensor with charge coupled device - has double layer structure with surface channel zone on buried channel zone in semiconductor substrate
10/07/1993DE4309898A1 Semiconductor device, e.g. npn bipolar transistor - has poly:silicon@ layer between semiconductor region and surface electrode metal forming safe operating area
10/07/1993DE4302223A1 Semiconductor flash EPROM used as one-time programmable ROM if cells excessively erased - has information memory indicating if cell has been classified as over-erased by energy beam or not during testing
10/07/1993DE4223455A1 Semiconductor pressure sensor, e.g. for measuring atmospheric pressure in motor vehicle - has vacuum chamber and diffused resistance device on silicon substrates with protective layer
10/07/1993DE4211050A1 Bipolar transistor mfr. using monocrystalline substrate - forming insulation groove in substrate, completely surrounding bipolar transistor and defined insulating surface regions
10/06/1993EP0564094A2 Gated diode and method of fabricating the same
10/06/1993EP0564009A1 Electric and electronic devices having a polyimide resin insulating film
10/06/1993EP0564007A1 Thyristor with reduced break-over voltage
10/06/1993EP0563952A1 Composite controlled semiconductor device and power conversion device using the same
10/06/1993EP0563847A2 A field effect transistor
10/06/1993EP0563504A1 Integrated current-limiter device for power MOS transistors and process for the manufacture of said device
10/06/1993EP0563059A1 High-voltage circuit component
10/06/1993EP0189486B1 Method of producing bipolar semiconductor devices
10/05/1993US5251171 Method of operating a semiconductor memory device
10/05/1993US5250931 Active matrix panel having display and driver TFT's on the same substrate
10/05/1993US5250846 Semiconductor device with multi-layer leads
10/05/1993US5250838 Semiconductor device comprising an integrated circuit having a vertical bipolar transistor
10/05/1993US5250835 Field effect type thin film transistor having a plurality of gate electrodes
10/05/1993US5250833 Power transistor free from back gate bias effect and an integrated circuit device using the same
10/05/1993US5250826 Planar HBT-FET Device
10/05/1993US5250822 Field effect transistor
10/05/1993US5250818 Low temperature germanium-silicon on insulator thin-film transistor
10/05/1993US5250814 Semiconductor light-emitting devices
10/05/1993US5250466 First layer of gold-germanium on semiconductor layer, second layer of gold, tempering
10/05/1993US5250458 Method for manufacturing semiconductor memory device having stacked memory capacitors
10/05/1993US5250455 Method of making a nonvolatile semiconductor memory device by implanting into the gate insulating film
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