Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/1993
11/16/1993US5262984 Non-volatile memory device capable of storing multi-state data
11/16/1993US5262927 Partially-molded, PCB chip carrier package
11/16/1993US5262919 Semiconductor memory device including programming circuitry
11/16/1993US5262846 Contact-free floating-gate memory array with silicided buried bitlines and with single-step-defined floating gates
11/16/1993US5262669 Semiconductor rectifier having high breakdown voltage and high speed operation
11/16/1993US5262668 Schottky barrier rectifier including schottky barrier regions of differing barrier heights
11/16/1993US5262664 Process for formation of LDD transistor, and structure thereof
11/16/1993US5262660 Useful at microwave frequencies
11/16/1993US5262659 Nyquist frequency bandwidth hact memory
11/16/1993US5262655 Thin film field effect device having an LDD structure and a method of manufacturing such a device
11/16/1993US5262654 Device for reading an image having a common semiconductor layer
11/16/1993US5262354 Refractory metal capped low resistivity metal conductor lines and vias
11/16/1993US5262350 Causing layer to be semi-amorphous, improved photoelectric conversion efficiency
11/16/1993US5262345 High quality NPN and PNP transistors on same wafer
11/16/1993US5262344 N-channel clamp for ESD protection in self-aligned silicided CMOS process
11/16/1993US5262339 High speed switching, high insulation capacity, large current capacity
11/16/1993US5262338 Relation of dielectric breakdown voltage to oxygen concentration
11/16/1993US5262337 Method of making a metal oxide semiconductor field effect transistor having a convex channel region
11/16/1993US5262336 Insulated gate bipolar transistors, controlling minority carriers
11/16/1993US5262335 Molecular beam epitaxy, adjacent NPN and PNP profiles
11/13/1993CA2095783A1 Overpressure-protected, polysilicon, capacitive differential pressure sensor and method of making the same
11/12/1993CA2095769A1 Thyristor with breakdown region
11/11/1993WO1993022798A1 Base resistance controlled mos gated thyristor with improved turn-off characteristics
11/11/1993WO1993022797A1 Mos gated thyristor having on-state current saturation capability
11/11/1993WO1993022796A1 Mos gated thyristor with remote turn-off electrode
11/11/1993WO1993022690A1 Acceleration sensor and its manufacture
11/11/1993WO1993022644A1 A method of manufacturing a measuring device
11/11/1993CA2134673A1 Mos gated thyristor having on-state current saturation capability
11/11/1993CA2134672A1 Mos gated thyristor with remote turn-off electrode
11/11/1993CA2133585A1 Base resistance controlled mos gated thyristor with improved turn-off characteristics
11/10/1993EP0569259A2 Multiquantum barrier field effect transistor
11/10/1993EP0569258A2 Multiquantum barrier Schottky junction device
11/10/1993EP0569116A1 Emitter switched thyristor and method of manufacturing the same
11/10/1993EP0568781A1 A semiconductor pressure sensor assembly having an improved package structure
11/10/1993EP0568692A1 Power fet with shielded channels.
11/10/1993EP0276292B1 Process for fabricating stacked mos structures
11/09/1993US5260894 Semiconductor memory device
11/09/1993US5260603 Electrode structure of semiconductor device for use in GaAs compound substrate
11/09/1993US5260595 Diffusion resistor having single event resistance used in semiconductor device
11/09/1993US5260593 Semiconductor floating gate device having improved channel-floating gate interaction
11/09/1993US5260590 Field effect transistor controlled thyristor having improved turn-on characteristics
11/09/1993US5260227 Method of making a self aligned static induction transistor
11/09/1993US5260169 Method for manufacturing semiconductor device
11/09/1993US5259923 Dry etching method
11/09/1993US5259247 Sensor
11/09/1993CA2006245C Liquid crystal display device and method for manufacturing thereof
11/04/1993DE4313398A1 Semiconductor acceleration detector - has piezo-resistive cantilever transducer connected to upright support on base by connection of lesser width than that of cantilever.
11/03/1993EP0568466A1 Burried avalanche diode
11/03/1993EP0568421A1 Protection device of an integrated circuit against electrostatic discharges
11/03/1993EP0568316A2 Fabrication method of fine structure
11/03/1993EP0568269A2 Diode and method for manufacturing the same
11/03/1993EP0568206A2 Bipolar transistor and method of manufacture
11/03/1993EP0568144A2 Semiconductor device with a semiconductor body of which a surface is provided with a barrier layer of TixW1-x, and method of manufacturing this device
11/03/1993EP0568108A1 Method and structure for inhibiting dopant and/or silicon out-diffusion
11/03/1993EP0568065A2 High-dielectric constant oxides on semiconductors using a Ge buffer layer
11/03/1993EP0568064A2 Pb/Bi-containing high-dielectric constant oxides using a non-Pb/Bi-containing perovskite as a buffer layer
11/03/1993EP0568050A2 Ohmic contact on a compound semiconductor layer
11/03/1993EP0567936A1 Power VFET device and method
11/03/1993EP0567815A2 Method of making a contact hole to a doped region
11/03/1993EP0567623A1 Power fet having reduced threshold voltage
11/03/1993EP0323249B1 Semiconductor crystal structure and a process for producing the same
11/03/1993CN1078068A Method for forming a semiconductor device
11/03/1993CN1022653C Method for making transistor with silicon single crystal thin section
11/02/1993US5258949 Nonvolatile memory with enhanced carrier generation and method for programming the same
11/02/1993US5258670 Light triggered & quenched static induction thyristor circuit
11/02/1993US5258657 Semiconductor device
11/02/1993US5258644 Semiconductor device and method of manufacture thereof
11/02/1993US5258642 Semiconductor device having reduced parasitic capacitance
11/02/1993US5258641 Semiconductor device for extracting a signal used to monitor potential of a high voltage island at a low voltage island and method of manufacturing the same
11/02/1993US5258640 Gate controlled Schottky barrier diode
11/02/1993US5258638 Thermal ink jet power MOS device design/layout
11/02/1993US5258636 Narrow radius tips for high voltage semiconductor devices with interdigitated source and drain electrodes
11/02/1993US5258635 MOS-type semiconductor integrated circuit device
11/02/1993US5258633 Semiconductor device having an IGFET with diffused gate connection
11/02/1993US5258632 Velocity modulation transistor
11/02/1993US5258631 AlGaAs, transistors
11/02/1993US5258625 Interband single-electron tunnel transistor and integrated circuit
11/02/1993US5258577 Method of forming an electronic device
11/02/1993US5258326 Quantum device fabrication method
11/02/1993US5258325 Method for manufacturing a semiconductor device using a circuit transfer film
11/02/1993US5258323 Single crystal silicon on quartz
11/02/1993US5258320 Single crystal silicon arrayed devices for display panels
11/02/1993US5258319 Method of manufacturing a MOS type field effect transistor using an oblique ion implantation step
11/02/1993US5258318 Method of forming a BiCMOS SOI wafer having thin and thick SOI regions of silicon
11/02/1993CA2021671C High voltage semiconductor device and fabrication process
11/02/1993CA1323942C Metal oxide semiconductor structure
10/1993
10/28/1993WO1993021748A1 Membrane dielectric isolation ic fabrication
10/28/1993WO1993021659A1 Semiconductor devices with a double gate
10/28/1993WO1993021658A1 Integrated circuit with complementary heterojunction field effect transistors
10/28/1993WO1993021536A1 Method for fabricating microstructures
10/28/1993DE4213135A1 Acceleration sensor - has silicon@ plate for forming frame, central flexural spring, and inertial wt. and provided with resonator of e.g. piezoelectric material on upper and lower surfaces of plate.
10/27/1993EP0567341A1 Power device with isolated gate pad region
10/27/1993EP0567281A1 Liquid crystal display
10/27/1993EP0566885A1 pnpn Semiconductor element and driver circuit therefor
10/27/1993EP0566838A2 Manufacturing method of thin film transistor
10/27/1993EP0566739A1 Semiconductor device
10/27/1993EP0566639A1 Integrated power switch structure
10/27/1993EP0566591A1 Semiconductor device.
10/27/1993EP0566585A1 Storage cell arrangement and process for operating it.
10/27/1993EP0448713B1 Semiconductor device
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