| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/28/1994 | DE4402216A1 Halbleiterbauelement mit Kondensatoren und zu seiner Herstellung geeignetes Verfahren A semiconductor device comprising capacitors and suitable method for its preparation |
| 07/27/1994 | EP0608090A1 Semiconductor device which can be applied to liquid crystal display apparatus and method of manufacturing such a semiconductor device |
| 07/27/1994 | EP0608075A2 Non-volatile semiconductor memories |
| 07/27/1994 | EP0607936A1 Electrical junction device with lightly doped buffer region to precisely locate a P-N junction |
| 07/27/1994 | EP0607935A2 Heterojunction bipolar transistor fabrication method with low temperature base growth |
| 07/27/1994 | EP0607874A1 Solid state image sensor |
| 07/27/1994 | EP0607836A2 Process for manufacturing silicon-germanium bipolar heterojunction transistors |
| 07/27/1994 | EP0607820A2 Method for producing semiconductor device having metal silicide layer on diffusion region |
| 07/27/1994 | EP0607732A2 Structure and method for a superbarrier to prevent diffusion between a noble and a non-noble metal |
| 07/27/1994 | EP0607729A2 High performance MESFET with multiple quantum wells |
| 07/27/1994 | EP0607658A2 MOSFET manufacture |
| 07/27/1994 | EP0607522A2 High-density nonvolatile semiconductor memory and fabrication method |
| 07/27/1994 | EP0579779A4 A single transistor non-volatile electrically alterable semiconductor memory device |
| 07/27/1994 | CN2172914Y Thyristor with 400V high voltage |
| 07/27/1994 | CA2110073A1 Dual gate fet and circuits using dual gate fet |
| 07/26/1994 | US5333292 Microcomputer for selectively accessing non-volatile memory and other storage unit in response to allocated address inputs |
| 07/26/1994 | US5332952 Quantum phase interference transistor |
| 07/26/1994 | US5332924 Semiconductor device and production method thereof |
| 07/26/1994 | US5332920 Semiconductor device |
| 07/26/1994 | US5332918 Switches, III-IV intermetallic |
| 07/26/1994 | US5332916 Transmission gate |
| 07/26/1994 | US5332915 Semiconductor memory apparatus |
| 07/26/1994 | US5332914 EEPROM cell structure and architecture with increased capacitance and with programming and erase terminals shared between several cells |
| 07/26/1994 | US5332913 Buried interconnect structure for semiconductor devices |
| 07/26/1994 | US5332912 Heterojunction bipolar transistor |
| 07/26/1994 | US5332722 Nonvolatile memory element composed of combined superconductor ring and MOSFET |
| 07/26/1994 | US5332696 Method for manufacturing a silicon layer having increased surface area |
| 07/26/1994 | US5332695 Method of manufacturing semi conductor device mounted on a heat sink |
| 07/26/1994 | US5332691 Method of forming a contact |
| 07/26/1994 | US5332686 Method of manufacturing large capacity solid-state memory |
| 07/26/1994 | US5332684 Method for fabricating thin-film capacitor with restrained leakage current at side and end portions of electrodes in a semiconductor integrated circuit device |
| 07/26/1994 | US5332681 Method of making a semiconductor device by forming a nanochannel mask |
| 07/26/1994 | US5332469 Capacitive surface micromachined differential pressure sensor |
| 07/26/1994 | US5332451 Epitaxially grown compound-semiconductor crystal |
| 07/21/1994 | WO1994016462A1 Spiral edge passivation structure for semiconductor devices |
| 07/20/1994 | EP0607075A1 Electronic component which can have a negative dynamic resistance and process for making the same |
| 07/20/1994 | EP0606522A2 Semiconductor device and methods for producing and mounting the semiconductor device |
| 07/20/1994 | EP0606350A1 Gallium arsenide mesfet imager |
| 07/20/1994 | EP0606220A1 Semiconductor accelerometer and method of its manufacture. |
| 07/20/1994 | CN1089756A Semiconductor device and method for forming the same and method for forming transparent conductive film |
| 07/19/1994 | US5331592 Non-volatile semiconductor memory device with erasure control circuit |
| 07/19/1994 | US5331447 TFT active matrix liquid crystal display devices with plural TFTs in parallel per pixel |
| 07/19/1994 | US5331410 Field effect transistor having a sandwiched channel layer |
| 07/19/1994 | US5331199 Bipolar transistor with reduced topography |
| 07/19/1994 | US5331197 Semiconductor memory device including gate electrode sandwiching a channel region |
| 07/19/1994 | US5331194 Bipolar static induction transistor |
| 07/19/1994 | US5331191 Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same |
| 07/19/1994 | US5331190 Semiconductor device including nonvolatile memories |
| 07/19/1994 | US5331189 Asymmetric multilayered dielectric material and a flash EEPROM using the same |
| 07/19/1994 | US5331188 Non-volatile DRAM cell |
| 07/19/1994 | US5331187 Nickel, chromium, aluminum alloy |
| 07/19/1994 | US5331186 Heterojunction bipolar transistor with base electrode having Schottky barrier contact to the emitter |
| 07/19/1994 | US5331185 Field effect transistor having a GaInAs/GaAs quantum well structure |
| 07/19/1994 | US5331184 Insulated gate bipolar transistor having high breakdown voltage |
| 07/19/1994 | US5331183 Conjugated polymer - acceptor heterojunctions; diodes, photodiodes, and photovoltaic cells |
| 07/19/1994 | US5331181 Non-volatile semiconductor memory |
| 07/19/1994 | US5331165 Split event reduced x-ray imager |
| 07/19/1994 | US5331149 Eye tracking system having an array of photodetectors aligned respectively with an array of pixels |
| 07/19/1994 | US5330938 Method of making non-volatile split gate EPROM memory cell and self-aligned field insulation |
| 07/19/1994 | US5330932 Method for fabricating GaInP/GaAs structures |
| 07/19/1994 | US5330931 Method of making a capacitor for an integrated circuit |
| 07/19/1994 | US5330925 Semiconductors |
| 07/19/1994 | US5330923 Manufacturing process for a micro MIS type FET |
| 07/19/1994 | US5330921 Titanium silicide |
| 07/19/1994 | US5330920 Method of controlling gate oxide thickness in the fabrication of semiconductor devices |
| 07/19/1994 | CA1330714C Mechanical sensor for high temperature environments |
| 07/14/1994 | DE4400233A1 FET with channel zone forming source and drain zones |
| 07/13/1994 | EP0606001A2 Process of fabrication of bipolar and field effect transistors |
| 07/13/1994 | EP0605958A1 Solid state imaging device having high-sensitivity and low-noise characteristics by reducing electrostatic capacity of interconnection |
| 07/13/1994 | EP0605946A2 Transistor process for removing narrow base effects |
| 07/13/1994 | EP0605846A1 Active matrix liquid crystal display device |
| 07/13/1994 | EP0605679A1 Method and device for stacking substrates which are to be joined by bonding |
| 07/13/1994 | EP0605634A1 Complementary bipolar transistors having high early voltage, high frequency performance and high breakdown voltage characteristics and method of making same |
| 07/13/1994 | EP0259490B1 A method of producing a semiconductor device |
| 07/13/1994 | CN1089366A An active matrix for liquid crystal displays |
| 07/12/1994 | USRE34658 Semiconductor device of non-single crystal-structure |
| 07/12/1994 | US5329271 Semiconductor strain sensor |
| 07/12/1994 | US5329257 SiGe transferred electron device and oscillator using same |
| 07/12/1994 | US5329161 Molybdenum boride barrier layers between aluminum and silicon at contact points in semiconductor devices |
| 07/12/1994 | US5329157 Semiconductor packaging technique yielding increased inner lead count for a given die-receiving area |
| 07/12/1994 | US5329156 Feed bus for RF power transistors |
| 07/12/1994 | US5329151 Gallium arsenide, carbon dope |
| 07/12/1994 | US5329150 Semiconductor photodetector devices with pairs of monoatomic layers separated by intrinsic layers |
| 07/12/1994 | US5329148 Semiconductor device and preparing method therefor |
| 07/12/1994 | US5329145 Semiconductors |
| 07/12/1994 | US5329144 Heterojunction bipolar transistor with a specific graded base structure |
| 07/12/1994 | US5329142 Self turn-off insulated-gate power semiconductor device with injection-enhanced transistor structure |
| 07/12/1994 | US5329140 Thin film transistor and its production method |
| 07/12/1994 | US5329138 Short channel CMOS device capable of high performance at low voltage |
| 07/12/1994 | US5328862 Method of making metal oxide semiconductor field effect transistor |
| 07/12/1994 | US5328861 Method for forming thin film transistor |
| 07/12/1994 | US5328859 Method of making high voltage PNP bipolar transistor in CMOS |
| 07/12/1994 | US5328858 Method for producing the bipolar transistor |
| 07/12/1994 | US5328857 Method of forming a bilevel, self aligned, low base resistance semiconductor structure |
| 07/07/1994 | WO1994015366A1 Semiconductor device |
| 07/07/1994 | WO1994015365A1 Field-effect semiconductor component |
| 07/07/1994 | WO1994015363A1 Non-volatile semiconductor memory cell |
| 07/07/1994 | WO1994015361A1 Fet chip with heat-extracting bridge |
| 07/07/1994 | WO1994015360A1 Semiconductor device |
| 07/07/1994 | WO1994015359A1 Silicon on diamond circuit structure and method of making same |