| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/07/1994 | WO1994015356A1 Single crystal silicon on quartz |
| 07/07/1994 | WO1994015341A1 Memory array with field oxide islands eliminated and method |
| 07/07/1994 | WO1994015340A1 Memory device |
| 07/07/1994 | DE4344808A1 Aktive Matrix für Flüssigkristallanzeigen Active matrix liquid crystal displays |
| 07/07/1994 | CA2117460A1 Fet chip with heat-extracting bridge |
| 07/06/1994 | EP0605302A2 Procedure for fabricating a pressure transducer using the silicon on isolation technique and transducer thus obtained |
| 07/06/1994 | EP0605300A1 Method for manufacturing accelerometers using the silicon on insulator technology and accelerometer thereby obtained |
| 07/05/1994 | US5327385 Method of erasure for a non-volatile semiconductor memory device |
| 07/05/1994 | US5327268 Reflective type liquid crystal display with reversely staggered TFT structures |
| 07/05/1994 | US5327006 Thin, dielectrically isolated island resident transistor structure having low collector resistance |
| 07/05/1994 | US5327000 Semiconductor device interconnected to analog IC driven by high voltage |
| 07/05/1994 | US5326999 Non-volatile semiconductor memory device and manufacturing method thereof |
| 07/05/1994 | US5326996 Charge skimming and variable integration time in focal plane arrays |
| 07/05/1994 | US5326995 Semiconductor device having a heterojunction interface for transporting carriers with improved carrier mobility |
| 07/05/1994 | US5326993 Insulated gate bipolar transistor |
| 07/05/1994 | US5326992 Silicon carbide and SiCAlN heterojunction bipolar transistor structures |
| 07/05/1994 | US5326991 Semiconductor device having silicon carbide grown layer on insulating layer and MOS device |
| 07/05/1994 | US5326989 Semiconductor device having thin film transistor and method of manufacturing the same |
| 07/05/1994 | US5326985 Bipolar doped semiconductor structure and method for making |
| 07/05/1994 | US5326724 Integrated circuits with layers of metal, nitride, dielectric, and silicide and removal by etching |
| 07/05/1994 | US5326721 Method of fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer |
| 07/05/1994 | US5326718 Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor |
| 07/05/1994 | US5326717 Method of fabricating a compound semiconductor device |
| 07/05/1994 | US5326712 Method for manufacturing a thin film transistor |
| 07/05/1994 | US5326711 High performance high voltage vertical transistor and method of fabrication |
| 07/05/1994 | US5326710 NPN collector sinks for integrated circuits with dopes |
| 06/30/1994 | DE4344278A1 Semiconductor device with insulated gate |
| 06/30/1994 | DE3546745C2 Variable conductivity power MOSFET |
| 06/29/1994 | EP0604392A1 Insulated gate semiconductor device |
| 06/29/1994 | EP0604348A2 A method for thinning SOI films having improved thickness uniformity |
| 06/29/1994 | EP0604281A1 CCD shift register with improved read-out device |
| 06/29/1994 | EP0604212A1 Semiconductor sensor for sensing a physical quantity |
| 06/29/1994 | EP0604194A2 Structure to provide junction breakdown stability for deep trench devices |
| 06/29/1994 | EP0604163A2 Transistor structure for improved base-collector junction characteristics |
| 06/29/1994 | EP0603737A2 Hybrid bipolar/field-effect power transistor in group III-V material system |
| 06/29/1994 | EP0603711A2 IPG transistor and semiconductor integrated device; production methods thereof |
| 06/29/1994 | EP0603622A1 Thin-film transistor array and method of fabricating the same |
| 06/29/1994 | EP0603437A1 Semiconductor device having reduced parasitic capacitance and method of fabrication |
| 06/29/1994 | CN1088712A Semiconductor device and method for forming the same |
| 06/28/1994 | US5325327 Non-volatile memory, semiconductor memory device having the non-volatile memory |
| 06/28/1994 | US5325106 Analog driver for scrollable spatial light modulator |
| 06/28/1994 | US5324984 Semiconductor device with improved electrode structure |
| 06/28/1994 | US5324983 Semiconductor device |
| 06/28/1994 | US5324980 Multi-layer type semiconductor device with semiconductor element layers stacked in opposite direction and manufacturing method thereof |
| 06/28/1994 | US5324978 Semiconductor device having an improved breakdown voltage-raising structure |
| 06/28/1994 | US5324976 Phonon controlled conductivity device |
| 06/28/1994 | US5324972 Semiconductor non-volatile memory device and method of manufacturing the same |
| 06/28/1994 | US5324971 Power semiconductor device having over voltage protection |
| 06/28/1994 | US5324970 Interconnection structure in semiconductor device |
| 06/28/1994 | US5324969 High-breakdown voltage field-effect transistor |
| 06/28/1994 | US5324968 CCD image sensor |
| 06/28/1994 | US5324967 Turn off type semiconductor device, method of producing the same and the power conversion apparatus employing the same |
| 06/28/1994 | US5324966 MOS-controlled thyristor |
| 06/28/1994 | US5324960 Dual-transistor structure and method of formation |
| 06/28/1994 | US5324928 Method of driving a thin film transistor type optical sensor and the drive unit |
| 06/28/1994 | US5324688 Method of fabricating a semiconductor acceleration sensor |
| 06/28/1994 | US5324686 Method of manufacturing semiconductor device using hydrogen as a diffusion controlling substance |
| 06/28/1994 | US5324678 Method of forming a multi-layer type semiconductor device with semiconductor element layers stacked in opposite directions |
| 06/28/1994 | US5324677 Method of making memory cell and a peripheral circuit |
| 06/28/1994 | US5324676 Method for forming a dual thickness dielectric floating gate memory cell |
| 06/28/1994 | US5324675 Method of producing semiconductor devices of a MONOS type |
| 06/28/1994 | US5324674 Fabrication method for a self-aligned thin film transistor having reduced end leakage and device formed thereby |
| 06/28/1994 | US5324673 Method of formation of vertical transistor |
| 06/28/1994 | US5324672 Manufacturing method for bipolar transistor |
| 06/28/1994 | US5324670 Method of manufacturing a thyristor device with improved turn-off characteristics |
| 06/28/1994 | US5323656 Overpressure-protected, polysilicon, capacitive differential pressure sensor and method of making the same |
| 06/28/1994 | CA2018976C Doping procedures for semiconductor devices |
| 06/28/1994 | CA1330451C Solid state overcurrent protection device |
| 06/23/1994 | WO1994014198A1 A mos transistor having a composite gate electrode and method of fabrication |
| 06/23/1994 | WO1994014197A1 Bipolar transistor |
| 06/23/1994 | WO1994014195A1 Power semiconductor switch with an integrated circuit |
| 06/23/1994 | WO1994014153A1 Flat screen having individually dipole-protected microdots |
| 06/23/1994 | WO1994013471A1 C-axis perovskite thin films grown on silicon dioxide |
| 06/23/1994 | CA2111788A1 Hybrid bipolar/field-effect power transistor in group iii-v material system |
| 06/22/1994 | EP0603102A2 Low-temperature MOSFET source drain structure with ultra-short channel |
| 06/22/1994 | EP0602995A2 Process and apparatus for manufacturing MOS device |
| 06/22/1994 | EP0602671A2 Heterojunction field effect transistor having an improved transistor characteristic |
| 06/22/1994 | EP0602612A1 GTO Thyristor |
| 06/22/1994 | EP0602569A2 Method of making two-phase buried channel planar gate CCD |
| 06/22/1994 | EP0602568A2 A multilayer structure having a (111)-oriented buffer layer |
| 06/22/1994 | EP0602532A2 A multilayer structure having an epitaxial metal electrode |
| 06/22/1994 | EP0602315A2 Method of making thin film transistors |
| 06/22/1994 | EP0602278A1 High frequency bipolar transistor |
| 06/22/1994 | EP0602250A1 Thin film transistor, solid-state device, display device, and method for manufacturing thin film transistor |
| 06/21/1994 | US5323344 Quantum memory device |
| 06/21/1994 | US5323059 Vertical current flow semiconductor device utilizing wafer bonding |
| 06/21/1994 | US5323057 Lateral bipolar transistor with insulating trenches |
| 06/21/1994 | US5323056 Bipolar transistor with a particular emitter structure |
| 06/21/1994 | US5323055 Semiconductor device with buried conductor and interconnection layer |
| 06/21/1994 | US5323053 Semiconductor devices using epitaxial silicides on (111) surfaces etched in (100) silicon substrates |
| 06/21/1994 | US5323050 Collector arrangement for magnetotransistor |
| 06/21/1994 | US5323049 Semiconductor device with an interconnection layer on surface having a step portion |
| 06/21/1994 | US5323046 Semiconductor device and method for producing semiconductor device |
| 06/21/1994 | US5323044 Bi-directional MOSFET switch |
| 06/21/1994 | US5323042 Active matrix liquid crystal display having a peripheral driving circuit element |
| 06/21/1994 | US5323041 High-breakdown-voltage semiconductor element |
| 06/21/1994 | US5323040 Transistor with doped drift and channel regions; for high frequency, high power application; with high blocking voltage |
| 06/21/1994 | US5323039 Non-volatile semiconductor memory and method of manufacturing the same |
| 06/21/1994 | US5323036 Power FET with gate segments covering drain regions disposed in a hexagonal pattern |
| 06/21/1994 | US5323035 Interconnection structure for integrated circuits and method for making same |