H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/1994
11/15/1994	US5365081 Semiconductor device incorporating thermally contracted film
11/15/1994	US5365080 Field effect transistor with crystallized channel region
11/15/1994	US5365079 Thin film transistor and display device including same
11/15/1994	US5365078 Semiconductor device and method of making it
11/15/1994	US5365077 Gain-stable NPN heterojunction bipolar transistor
11/15/1994	US5365073 Nanofabricated structures
11/15/1994	US5364816 Epitaxially growing sample with heterojunction, forming semiconductor layers, forming source and drain metallizations, growing dielectric layer, applying photoresist, masking, forming recesses
11/15/1994	US5364810 Methods of forming a vertical field-effect transistor and a semiconductor memory cell
11/15/1994	US5364807 Method for fabricating LDD transitor utilizing halo implant
11/15/1994	US5364805 Method of manufacturing an EEPROM having an erasing gate electrode
11/15/1994	US5364803 Depositing diffusion barrier and tungsten silicide layer over silicon oxide layer on semiconductor surface, patterning, annealing; barrier prevents diffusion of fluorine
11/15/1994	US5364802 Method of making a semiconductor device with buried electrode
11/10/1994	WO1994025990A1 Thin film transistor and display using the transistor
11/10/1994	WO1994025989A1 An integrated circuit with improved reverse bias breakdown
11/10/1994	WO1994025985A1 Method and semiconductor device with increased maximum terminal voltage
11/10/1994	WO1994025983A1 Semiconductor chip packaging method and semiconductor chip having interdigitated gate runners with gate bonding pads
11/10/1994	WO1994025954A1 Apparatus for recovery of threshold voltage shift in amorphous silicon thin-film transistor device
11/10/1994	WO1994021102A3 Direct multilevel thin-film transistor production method
11/10/1994	DE4342479C1 Circuit structure having at least one MOS transistor
11/10/1994	DE4315012A1 Method for producing sensors, and sensor
11/10/1994	DE4302223C2 Nicht-flüchtige Halbleiterspeichereinrichtung sowie Herstellungsverfahren dafür The non-volatile semiconductor memory device and manufacturing method thereof
11/09/1994	EP0623964A2 Semiconductor devices using traps
11/09/1994	EP0623963A1 MOSFET on SOI substrate
11/09/1994	EP0623962A1 Gate electrode of power MOS field effect transistor
11/09/1994	EP0623961A2 Bipolar transistor with a large current gain
11/09/1994	EP0623960A1 IGBT with self aligned cathode structure and method for producing the same
11/09/1994	EP0623959A2 EEPROM cell
11/09/1994	EP0623951A1 A semiconductor device in a thin active layer with high breakdown voltage
11/09/1994	EP0623949A1 A dielectrically isolated semiconductor device and a method for its manufacture
11/09/1994	EP0623825A1 Accelerometer sense element
11/09/1994	EP0623824A1 Micro-machined accelerometer and method of its manufacture
11/09/1994	EP0623244A1 Quantum well p-channel field effect transistor, and integrated circuit having complementary transistors
11/09/1994	EP0398906B1 Zener power diode
11/09/1994	CN1094851A Transistor, semiconductor circuit, and method of forming the same
11/08/1994	US5363329 Semiconductor memory device for use in an electrically alterable read-only memory
11/08/1994	US5362982 Insulated gate FET with a particular LDD structure
11/08/1994	US5362981 Integrated semiconductor device having a buried semiconductor layer and fabrication method thereof
11/08/1994	US5362980 Semiconductor component with protective element for limiting current through component
11/08/1994	US5362979 SOI transistor with improved source-high performance
11/08/1994	US5362975 Diamond-based chemical sensors
11/08/1994	US5362973 Quantum fabricated via photo induced evaporation enhancement during in situ epitaxial growth
11/08/1994	US5362972 Semiconductor device using whiskers
11/08/1994	US5362685 Method for achieving a high quality thin oxide in integrated circuit devices
11/08/1994	US5362684 Non-monocrystalline silicon carbide semiconductor, process of production thereof, and semiconductor device employing the same
11/08/1994	US5362678 Method of manufacturing insulated via hole structure for semiconductor device
11/08/1994	US5362677 Method for producing a field effect transistor with a gate recess structure
11/08/1994	US5362671 Method of fabricating single crystal silicon arrayed devices for display panels
11/08/1994	US5362661 Method for fabricating thin film transistor
11/08/1994	US5362660 Depositing layer of chromium, then one of molybdenum on silicon surface, etching molybdenum with chromium acting as etch stop, then etching chromium with silicon acting as etch stop
11/08/1994	US5362659 Method for fabricating vertical bipolar junction transistors in silicon bonded to an insulator
11/08/1994	US5362658 Method for producing semiconductor device
11/08/1994	US5362657 Lateral complementary heterojunction bipolar transistor and processing procedure
11/08/1994	CA2009405C Microwave integrated circuit using a distributed line with a variable effective length
11/02/1994	EP0622858A2 Gallium nitride-based III-V group compound semiconductor device and method of producing the same
11/02/1994	EP0622855A2 Drain/source contact of a thin film transistor
11/02/1994	EP0622854A1 Semiconductor switch with IGBT and thyristor
11/02/1994	EP0622853A1 Insulated gate bipolar transistor
11/02/1994	EP0622852A1 A field effect transistor and a production method therefor
11/02/1994	EP0622850A1 An electrostatic discharge protect diode for silicon-on-insulator technology
11/02/1994	EP0622849A1 A monolithic integrated structure of an electronic device having a predetermined unidirectional conduction threshold
11/02/1994	EP0622844A1 Method of forming low resistance contacts at the junction between regions having different conductivity types
11/02/1994	EP0622834A2 Method to prevent latch-up and improve breakdown voltage in SOI MOSFETS
11/02/1994	EP0622806A2 Nonvolatile semiconductor memory device
11/02/1994	EP0622472A1 Method for growing a diamond or c-BN thin film on a diamond or c-BN substrate
11/01/1994	US5361225 Nonvolatile memory device utilizing field effect transistor having ferroelectric gate film
11/01/1994	US5361008 Switching circuit of low power consumption
11/01/1994	US5360994 Preventing reaction between silicon and aluminum
11/01/1994	US5360990 P/N junction device having porous emitter
11/01/1994	US5360989 MIS type capacitor having reduced change in capacitance when biased in forward and reverse directions
11/01/1994	US5360986 Carbon doped silicon semiconductor device having a narrowed bandgap characteristic and method
11/01/1994	US5360985 Press-contact type semiconductor device
11/01/1994	US5360984 Semiconductor device
11/01/1994	US5360983 Insulated gate bipolar transistor having a specific buffer layer resistance
11/01/1994	US5360981 Amorphous silicon memory
11/01/1994	US5360756 Method of manufacturing a semiconductor device having a monocrystal silicon layer
11/01/1994	US5360755 Method of manufacturing a dual field effect transistor
11/01/1994	US5360751 Method of making a cell structure for a programmable read only memory device
11/01/1994	US5360749 Integrated circuits
11/01/1994	US5360746 Method of fabricating a semiconductor device
11/01/1994	US5360524 Method for planarization of submicron vias and the manufacture of semiconductor integrated circuits
10/1994
10/27/1994	WO1994024330A1 Method for planarization of submicron vias and the manufacture of semiconductor integrated circuits
10/27/1994	DE4340967C1 Method for producing an integrated circuit arrangement having at least one MOS transistor
10/27/1994	CA2159648A1 Method for planarization of submicron vias and the manufacture of semiconductor integrated circuits
10/26/1994	EP0621644A2 Semiconductor-on-insulator field-effect transistor
10/26/1994	EP0621643A1 Reverse conducting gate turn-off thyristor
10/26/1994	EP0621642A2 Heterojunction bipolar transistor
10/26/1994	EP0621641A2 A heterojunction bipolar transistor and a production method thereof
10/26/1994	EP0621640A1 Semiconductor power device
10/26/1994	EP0621637A1 Protective diode for transistor
10/26/1994	EP0621636A1 Integrated structure protection device for the protection of logic-level power MOS devices against electro static discharges
10/26/1994	EP0621629A2 Method for reducing dislocations in integrated circuit devices
10/26/1994	CN1094189A Transistors and methods for fabrication thereof
10/25/1994	US5359554 Semiconductor memory device having an energy gap for high speed operation
10/25/1994	US5359257 Ballistic electron, solid state cathode
10/25/1994	US5359221 Semiconductor device
10/25/1994	US5359220 Hybrid bipolar/field-effect power transistor in group III-V material system
10/25/1994	US5359218 Semiconductor memory device with selection gate in a groove
10/25/1994	US5359216 DRAM process with improved polysilicon-to-polysilicon capacitor and the capacitor
10/25/1994	US5359214 Field effect devices formed from porous semiconductor materials
10/25/1994	US5359213 Charge transfer device and solid state image sensor using the same

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