| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 08/17/1994 | EP0610643A1 EEPROM cell and peripheral MOS transistor |
| 08/17/1994 | EP0610599A1 High voltage transistor with drift region |
| 08/17/1994 | EP0610564A2 Dual gate fet and circuits using dual gate fet |
| 08/17/1994 | EP0360804B1 Heterojunction bipolar transistor |
| 08/17/1994 | CN1090946A 电子电路 Electronic circuit |
| 08/17/1994 | CA2089583A1 Field-effect transistor and process for fabricating the same |
| 08/16/1994 | US5339180 Flat display |
| 08/16/1994 | US5338967 Semiconductor device structure with plated heat sink and supporting substrate |
| 08/16/1994 | US5338966 Variable capacitance diode device |
| 08/16/1994 | US5338965 High voltage structures with oxide isolated source and RESURF drift region in bulk silicon |
| 08/16/1994 | US5338964 Integrated circuit comprising a protection diode array |
| 08/16/1994 | US5338961 High power MOSFET with low on-resistance and high breakdown voltage |
| 08/16/1994 | US5338960 Formation of dual polarity source/drain extensions in lateral complementary channel MOS architectures |
| 08/16/1994 | US5338959 Thin film transistor with three dimensional multichannel structure |
| 08/16/1994 | US5338958 Semicondcutor device with high speed field effect transistor structure reducing concentrations of electric field near drain region |
| 08/16/1994 | US5338957 Nonvolatile semiconductor device and a method of manufacturing thereof |
| 08/16/1994 | US5338956 Electrically erasable and programmable read only memory having a thin film transferring transistor over a floating gate memory transistor |
| 08/16/1994 | US5338954 Semiconductor memory device having an insulating film and a trap film joined in a channel region |
| 08/16/1994 | US5338953 Electrically erasable and programmable semiconductor memory device with trench memory transistor and manufacturing method of the same |
| 08/16/1994 | US5338952 Non-volatile memory |
| 08/16/1994 | US5338951 Structure of high dielectric constant metal/dielectric/semiconductor capacitor for use as the storage capacitor in memory devices |
| 08/16/1994 | US5338950 Multiple port thin film capacitor |
| 08/16/1994 | US5338949 Semiconductor device having series-connected junction field effect transistors |
| 08/16/1994 | US5338948 Charge-coupled device with open gate structure |
| 08/16/1994 | US5338946 Solid state image sensor with fast reset |
| 08/16/1994 | US5338945 Silicon carbide field effect transistor |
| 08/16/1994 | US5338942 Semiconductor projections having layers with different lattice constants |
| 08/16/1994 | US5338703 Applying photoresist film, forming insulating film, forming resist pattern, etching insulation and photoresist to form opening, forming side walls of second insulating film, etching recess, side walls, depositing gate metal, dissolving resist |
| 08/16/1994 | US5338698 Etching and metal deposition selectively on semiconductor |
| 08/16/1994 | US5338697 Doping method of barrier region in semiconductor device |
| 08/16/1994 | US5338695 Making walled emitter bipolar transistor with reduced base narrowing |
| 08/16/1994 | US5338693 Using arsenic doping to form source region, forming gate oxide toward end of processing |
| 08/16/1994 | US5338692 Forming lateral potential barriers in two-dimensional charge carrier layer which act as insulating boundaries dividing starting structure into source, drain, gate, channel regions, forming contacts |
| 08/16/1994 | US5337606 Laterally sensitive accelerometer and method for making |
| 08/16/1994 | CA2007469C Secure integrated circuit chip with conductive shield |
| 08/11/1994 | DE4402085A1 Kapazitiver, an seiner Oberfläche mikrobearbeiteter Differenzdrucksensor und Verfahren zu dessen Herstellung Capacitive, micro-machined on its surface differential pressure sensor and method for its production |
| 08/11/1994 | DE4303423A1 Sensor and method for its manufacture |
| 08/10/1994 | EP0609919A2 Active matrix panel |
| 08/10/1994 | EP0609867A2 Process for fabricating a semiconductor crystallized layer and process for fabricating a semiconductor device using the same |
| 08/10/1994 | EP0609829A2 A non-volatile semiconductor memory device and a method for fabricating the same |
| 08/10/1994 | EP0609658A2 Output circuit device for charge transfer element |
| 08/10/1994 | EP0609536A2 Process for manufacturing vertical MOS transistors |
| 08/10/1994 | EP0609531A2 Power transistor |
| 08/10/1994 | EP0609496A1 Process of making a metallization stage comprising contacts and runners which canneet these contacts |
| 08/10/1994 | EP0609392A1 Soi cmos device having body extension for providing sidewall channel stop and body tie |
| 08/10/1994 | EP0609351A1 Bipolar junction transistor exhibiting improved beta and punch-through characteristics |
| 08/10/1994 | EP0598794A4 High frequency jfet and method for fabricating the same. |
| 08/10/1994 | CN1090680A Semiconductor unit |
| 08/09/1994 | US5337340 Charge multiplying detector (CMD) suitable for small pixel CCD image sensors |
| 08/09/1994 | US5337274 Nonvolatile semiconductor memory device having adjacent memory cells and peripheral transistors separated by field oxide |
| 08/09/1994 | US5337172 Liquid crystal matrix control employing doped semiconductor pixel electrode surrounded by undoped channel region |
| 08/09/1994 | US5336943 Temperature sensing circuit |
| 08/09/1994 | US5336926 Bipolar junction exhibiting suppressed kirk effect |
| 08/09/1994 | US5336924 Zener diode having a reference diode and a protective diode |
| 08/09/1994 | US5336923 Pulsed doping confines conduction in diode to sheet of charge that provides stepped capaitance-voltage profile |
| 08/09/1994 | US5336920 Buried avalanche diode having laterally adjacent semiconductor layers |
| 08/09/1994 | US5336918 Semiconductor pressure sensor and method of fabricating the same |
| 08/09/1994 | US5336917 Dynamic memory cell using hollow post shape channel thin-film transistor |
| 08/09/1994 | US5336913 Non-volatile semiconductor memory device and a method for fabricating the same |
| 08/09/1994 | US5336912 Buried plate type DRAM |
| 08/09/1994 | US5336910 Charge coupled device of high sensitivity and high integration |
| 08/09/1994 | US5336909 Bipolar transistor with an improved collector structure |
| 08/09/1994 | US5336907 MOS gate controlled thyristor having improved turn on/turn off characteristics |
| 08/09/1994 | US5336905 Semiconductor device having an insulating substrate and Schottky diodes |
| 08/09/1994 | US5336904 Field effect element utilizing resonant-tunneling and a method of manufacturing the same |
| 08/09/1994 | US5336901 Composite semiconductor structure for reducing scattering of carriers by optical phonons and a semiconductor device that uses such a composite semiconductor structure |
| 08/09/1994 | US5336632 Method for manufacturing capacitor and bipolar transistor |
| 08/09/1994 | US5336627 Method for the manufacture of a transistor having differentiated access regions |
| 08/09/1994 | US5336626 Method of manufacturing a MESFET with an epitaxial void |
| 08/09/1994 | US5336361 Treating surface of gallium arsenide substrate with gas plasma containing hydrogen and nitrogen, annealing |
| 08/09/1994 | US5335550 Semiconductor pressure sensor including multiple silicon substrates bonded together and method of producing the same |
| 08/04/1994 | WO1994017547A1 Method of manufacturing a silicon carbide field effect transistor |
| 08/04/1994 | WO1994017440A1 Reflective liquid crystal display including driver devices integrally formed in monocrystalline semiconductor layer and method of fabricating the display |
| 08/04/1994 | WO1994017439A1 Liquid crystal display including electrodes and driver devices integrally formed in monochrystalline semiconductor layer and method of fabricating the display |
| 08/04/1994 | WO1994017383A1 Pressure sensor |
| 08/03/1994 | EP0609069A1 Method for manufacturing semiconductor devices |
| 08/03/1994 | EP0609052A2 Method of manufacturing self-aligned transistors with increased base contact conductivity |
| 08/03/1994 | EP0609000A2 Transistors and methods for fabrication thereof |
| 08/03/1994 | EP0608999A1 Bipolar transistors and methods for fabrication thereof |
| 08/03/1994 | EP0608745A2 Method of producing MOS devices |
| 08/03/1994 | EP0608633A2 Method for multilayer CVD processing in a single chamber |
| 08/03/1994 | EP0608551A1 Method of forming ohmic contact by sputtering a TiN layer for LSI circuit and LSI circuit |
| 08/03/1994 | EP0608503A2 A semiconductor device and its manufacturing method |
| 08/03/1994 | EP0608376A1 Voltage variable capacitor |
| 08/03/1994 | CN1090427A Semiconductor device and method for forming the same |
| 08/02/1994 | US5335219 Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements |
| 08/02/1994 | US5334871 Field effect transistor signal switching device |
| 08/02/1994 | US5334867 Image sensor device with insulation film |
| 08/02/1994 | US5334865 MODFET structure for threshold control |
| 08/02/1994 | US5334863 Semiconductor memory device having a meshlike grounding wiring |
| 08/02/1994 | US5334862 Thin film transistor (TFT) loads formed in recessed plugs |
| 08/02/1994 | US5334860 Panel having thin film element formed thereon |
| 08/02/1994 | US5334859 Thin-film transistor having source and drain electrodes insulated by an anodically oxidized film |
| 08/02/1994 | US5334853 Semiconductor cold electron emission device |
| 08/02/1994 | US5334835 Probe drive mechanism and electronic device which uses the same |
| 08/02/1994 | US5334555 Controlling flow rate of silane gas and level of high frequency electricity yields film which gives preferred ultra violet absorption and transmission rates |
| 08/02/1994 | US5334550 Method of producing a self-aligned window at recessed intersection of insulating regions |
| 08/02/1994 | US5334549 Forming both bipolar and p-channel transistors in same recess |
| 08/02/1994 | US5334546 Method of forming a semiconductor device which prevents field concentration |
| 08/02/1994 | US5334544 Forming electroconductive thin aluminum film over dielectric transparent substrate, then metallic(other than aluminum) film and anodic oxidation of it yields dielectric, then covering with silicon nitride film |