| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/26/1994 | US5307312 Process for obtaining an N-channel single polysilicon level EPROM cell and cell obtained with said process |
| 04/26/1994 | US5307305 Semiconductor device having field effect transistor using ferroelectric film as gate insulation film |
| 04/26/1994 | US5307068 Tunable high-frequency devices |
| 04/26/1994 | US5306951 Sidewall silicidation for improved reliability and conductivity |
| 04/26/1994 | US5306943 Schottky barrier diode with ohmic portion |
| 04/26/1994 | US5306941 Semiconductor memory device and production process thereof |
| 04/26/1994 | US5306938 Lateral MOSFET |
| 04/26/1994 | US5306937 Semiconductor device having a built-in current-sensing diode |
| 04/26/1994 | US5306936 Non-volatile semiconductor memory device having oxynitride film for preventing charge in floating gate from loss |
| 04/26/1994 | US5306934 Semiconductor device with buried electrode |
| 04/26/1994 | US5306932 Charge transfer device provided with improved output structure |
| 04/26/1994 | US5306930 Emitter switched thyristor with buried dielectric layer |
| 04/26/1994 | US5306929 MOS controlled thyristor |
| 04/26/1994 | US5306928 Diamond semiconductor device having a non-doped diamond layer formed between a BN substrate and an active diamond layer |
| 04/26/1994 | US5306927 High current amplifier utilizing a josephson junction Schottky diode three terminal device |
| 04/26/1994 | US5306924 Semiconductor device with strained-layer superlattice |
| 04/26/1994 | US5306906 Solid-state imaging device having a plurality of charge transfer electrodes formed in a serpentine pattern |
| 04/26/1994 | US5306668 Method of fabricating metal-electrode in semiconductor device |
| 04/26/1994 | US5306667 Process for forming a novel buried interconnect structure for semiconductor devices |
| 04/26/1994 | US5306661 Method of making a semiconductor device using a nanochannel glass matrix |
| 04/26/1994 | US5306656 Method for reducing on resistance and improving current characteristics of a MOSFET |
| 04/26/1994 | US5306655 Structure and method of manufacture for MOS field effect transistor having lightly doped drain and source diffusion regions |
| 04/26/1994 | US5306654 Doping the electrode for forming the contact region after doping N-type phosphorus dopant to another portion of base layer |
| 04/26/1994 | US5306653 Forming the electrodes on the surface of semiconductor layer as a channel to improve conductance |
| 04/26/1994 | US5306652 Lateral double diffused insulated gate field effect transistor fabrication process |
| 04/26/1994 | US5306650 Method of making silicon MESFET for dielectrically isolated integrated circuits |
| 04/26/1994 | US5305640 Digital flexure beam accelerometer |
| 04/21/1994 | DE4335588A1 Press. sensor, e.g. for measuring combustion press. in IC engine - has metal membrane covering housing opening, and non- compressible medium transferring press. to semiconducting membrane |
| 04/21/1994 | DE4335457A1 Gate insulation film formation on silicon - by nitriding, forming oxide film and converting to oxy:nitride film |
| 04/21/1994 | DE4235152A1 Semiconductor fine structure mfg. method - producing separate small islands by etching raw poly:silicon@ on semiconductor material |
| 04/21/1994 | DE4234777A1 Mfg. gate electrode for FET - producing gate electrode photolithographically and etching metal layer to form T=shaped gate electrode of shorter gate length |
| 04/20/1994 | EP0592992A1 GTO-thyristor |
| 04/20/1994 | EP0592991A1 GTO-thyristor |
| 04/20/1994 | EP0592765A2 Methods for producing heterojunction bipolar transistors |
| 04/20/1994 | EP0592587A1 A gto-thyristor and a method for the manufacture of a gto-thyristor |
| 04/20/1994 | CN1085690A Semiconductor device comprising a lateral dmost with breakdown voltage raising zones and provisions for exchanging charge with the back gate region |
| 04/19/1994 | US5305273 Semiconductor memory device |
| 04/19/1994 | US5304840 Upper dielectric layer is silicon nitride or doped phospho silicate or boro phospho silicate, lower layer very thin oxynitrides |
| 04/19/1994 | US5304837 Monolithically integrated temperature sensor for power semiconductor components |
| 04/19/1994 | US5304836 High voltage field effect transistor having a small ratio of channel width to channel length and method of manufacture |
| 04/19/1994 | US5304834 Selective epitaxy of silicon in silicon dioxide apertures with suppression of unwanted formation of facets |
| 04/19/1994 | US5304832 Vertical power field effect transistor having base region inwardly projecting from corners thereof into source region |
| 04/19/1994 | US5304831 Low on-resistance power MOS technology |
| 04/19/1994 | US5304829 Nonvolatile semiconductor device |
| 04/19/1994 | US5304828 Silicon layer having increased surface area and method for manufacturing |
| 04/19/1994 | US5304827 Performance lateral double-diffused MOS transistor |
| 04/19/1994 | US5304825 Linear heterojunction field effect transistor |
| 04/19/1994 | US5304823 An equipment protection semiconductor integrated circuit |
| 04/19/1994 | US5304822 Static induction type semiconductor device with multiple source contact regions |
| 04/19/1994 | US5304821 MOS-gate-turnoff thyristor |
| 04/19/1994 | US5304816 Article comprising a "ballistic" heterojunction bipolar transistor |
| 04/19/1994 | US5304802 Semiconductor device including overvoltage protective circuit |
| 04/19/1994 | US5304510 Semiconductors |
| 04/19/1994 | US5304505 Process for EEPROM cell structure and architecture with increased capacitance and with programming and erase terminals shared between several cells |
| 04/19/1994 | US5304503 Self-aligned stacked gate EPROM cell using tantalum oxide control gate dielectric |
| 04/19/1994 | US5304357 Apparatus for zone melting recrystallization of thin semiconductor film |
| 04/14/1994 | WO1994008340A1 Non-volatile semiconductor memory device having floating gate |
| 04/14/1994 | DE4334427A1 Lightly-doped-drain FET with limited surface depletion layer extension - confines depletion region to vicinity of gate electrode within surface region of higher charge carrier concn. |
| 04/14/1994 | DE4333768A1 EEPROM with memory cell field for information signals - has peripheral circuit for memory cell field control with HV and LV circuits, each with transistor |
| 04/14/1994 | DE4234238A1 Acceleration sensor with seismic mass and bending section - embedded in evacuated cavity inside layers of silicon so that movement varies capacitance |
| 04/13/1994 | EP0592227A2 Fabrication of a thin film transistor and production of a liquid crystal display apparatus |
| 04/13/1994 | EP0592157A2 Integrated thin film approach to achieve high ballast levels for overlay structures |
| 04/13/1994 | EP0592124A2 Method for growing an oxide layer on a semiconductor surface |
| 04/13/1994 | EP0592084A1 Retrograde nwell cathode Schottky transistor and fabrication process |
| 04/13/1994 | EP0592064A2 Field effect transistor and method of production |
| 04/13/1994 | EP0591788A2 Method of preparing a diffused silicon device substrate |
| 04/13/1994 | EP0591672A2 Method for fabricating bipolar junction and MOS transistors on SOI |
| 04/13/1994 | EP0591646A2 Process for manufacturing a self-aligned field effect transistor |
| 04/13/1994 | EP0591607A2 Isolated semiconductor device and production method thereof |
| 04/13/1994 | EP0591599A1 Method of fabricating integrated devices, and integrated device produced thereby |
| 04/13/1994 | EP0591598A1 Method of fabricating non-volatile memories, and non-volatile memory produced thereby |
| 04/13/1994 | EP0591554A1 Acceleration sensor and its manufacture |
| 04/13/1994 | EP0591501A1 Integrated circuit with complementary heterojunction field effect transistors |
| 04/13/1994 | CN1085352A Semiconductor device and method for forming the same |
| 04/12/1994 | US5303197 Non-volatile semiconductor memory device having EEPROM cell, dummy cell, and sense circuit for increasing reliability and enabling one-bit operation |
| 04/12/1994 | US5303187 Non-volatile semiconductor memory cell |
| 04/12/1994 | US5303185 EEPROM cell structure and architecture with increased capacitance and with programming and erase terminals shared between several cells |
| 04/12/1994 | US5303184 Non-volatile semiconductor memory having commonly used source or drain regions of floating gate type transistors |
| 04/12/1994 | US5303110 Insulated-gate controlled semiconductor device |
| 04/12/1994 | US5303053 Charge coupled device for overcoming an output voltage difference between different shift registers |
| 04/12/1994 | US5303049 Electronic still camera with enhanced tonal rendition |
| 04/12/1994 | US5302946 Stacked display panel construction and method of making same |
| 04/12/1994 | US5302847 Semiconductor heterostructure having a capping layer preventing deleterious effects of As-P exchange |
| 04/12/1994 | US5302846 Semiconductor device having improved vertical insulated gate type transistor |
| 04/12/1994 | US5302845 Transistor with an offset gate structure |
| 04/12/1994 | US5302844 Semiconductor device and method for manufacturing the same |
| 04/12/1994 | US5302843 Improved vertical channel transistor |
| 04/12/1994 | US5302842 Field-effect transistor formed over gate electrode |
| 04/12/1994 | US5302841 Heterojunction bipolar transistor |
| 04/12/1994 | US5302840 HEMT type semiconductor device having two semiconductor well layers |
| 04/12/1994 | US5302839 Light emitting diode having an improved GaP compound substrate for an epitaxial growth layer thereon |
| 04/12/1994 | US5302838 Multi-quantum well injection mode device |
| 04/12/1994 | US5302552 Method of manufacturing a semiconductor device whereby a self-aligned cobalt or nickel silicide is formed |
| 04/12/1994 | US5302544 Method of making CCD having a single level electrode of single crystalline silicon |
| 04/12/1994 | US5302543 Method of making a charge coupled device |
| 04/12/1994 | US5302538 Method of manufacturing field effect transistor |
| 04/12/1994 | US5302537 Manufacturing method for a low voltage power MISFET utilizing only three masks |
| 04/12/1994 | US5302536 Isotropic then anisotropic etching |
| 04/12/1994 | US5302535 Method of manufacturing high speed bipolar transistor |
| 04/06/1994 | EP0591084A2 Trench sidewall structure |