| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/17/1994 | US5313076 Thin film transistor and semiconductor device including a laser crystallized semiconductor |
| 05/17/1994 | US5313075 Thin-film transistor |
| 05/17/1994 | US5312782 SOI type vertical channel field effect transistor and process of manufacturing the same |
| 05/17/1994 | US5312767 Semiconductors |
| 05/17/1994 | US5312766 Method of providing lower contact resistance in MOS transistors |
| 05/17/1994 | US5312684 Threshold switching device |
| 05/17/1994 | US5312456 Micromechanical barb and method for making the same |
| 05/11/1994 | WO1994010755A1 Electronic component |
| 05/11/1994 | WO1994010706A1 Flash eeprom |
| 05/11/1994 | WO1994010704A1 Integrated circuit with layered superlattice material and method of fabricating same |
| 05/11/1994 | WO1994010702A1 Process for fabricating layered superlattice materials and making electronic devices including same |
| 05/11/1994 | WO1994010686A1 Flash memory system, and methods of constructing and utilizing same |
| 05/11/1994 | WO1994010648A1 Semiconductor neural circuit device |
| 05/11/1994 | WO1994010600A1 Single crystal silicon tiles for display panels |
| 05/11/1994 | EP0596748A2 CCD imager for obtaining a plurality of aspect ratios, making effective use of the photosensible area |
| 05/11/1994 | EP0596711A2 Capacitive pressure transducer apparatus |
| 05/11/1994 | EP0596691A2 Multi-function resonant tunneling logic gate and method of performing binary and multi-valued logic |
| 05/11/1994 | EP0596601A2 Transistors and methods for fabrication thereof |
| 05/11/1994 | EP0596565A2 Novel device configuration with multiple HV-LDMOS transistors and a floating well circuit |
| 05/11/1994 | EP0596473A1 Circuit for monitoring the drain current of a MOSFET |
| 05/11/1994 | EP0596468A2 MOSFET of LDD type and a method for fabricating the same |
| 05/11/1994 | EP0596414A2 Semiconductor integrated circuit device comprising a dielectric isolation structure |
| 05/11/1994 | EP0596264A1 Semi-conductor device with high breakdown voltage |
| 05/11/1994 | EP0596061A1 Current mirror with at least one pnp transistor |
| 05/11/1994 | DE4337871A1 Thin-film transistor mfr. leaving no impurities in channel regions - performing source and drain ion bombardment and ohmic contact formation prior to gate isolation and photoetching |
| 05/11/1994 | DE4236557A1 Power semiconductor component with soft-recovery and abrupt diodes - features unequal division of current between differently dimensioned soft-recovery and fast-switching free-wheel diode portions |
| 05/11/1994 | DE4236300A1 Fast-switching semiconductor junction device mfr. by double diffusion - by partial or total dissociation of iron-gold complexes during tempering at e.g. 300 deg.C to shorten carrier lifetime |
| 05/11/1994 | DE3522168C2 Verfahren zum Masseverbinden von planaren Bauelementen und integrierten Schaltkreisen A method for mass joining of planar devices and integrated circuits |
| 05/11/1994 | CA2145879A1 Process for fabricating layered superlattice materials and making electronic devices including same |
| 05/10/1994 | US5311465 Semiconductor memory device that uses a negative differential resistance |
| 05/10/1994 | US5311156 High frequency double pole double throw switch |
| 05/10/1994 | US5311148 Thermally optimized interdigitated transistor |
| 05/10/1994 | US5311055 Trenched bipolar transistor structures |
| 05/10/1994 | US5311054 Graded collector for inductive loads |
| 05/10/1994 | US5311052 Planar semiconductor component with stepped channel stopper electrode |
| 05/10/1994 | US5311051 Field effect transistor with offset region |
| 05/10/1994 | US5311050 Semiconductor vertical MOSFET inverter circuit |
| 05/10/1994 | US5311049 High speed writing and erasing |
| 05/10/1994 | US5311046 Long wavelength transmitter opto-electronic integrated circuit |
| 05/10/1994 | US5311045 Field effect devices with ultra-short gates |
| 05/10/1994 | US5311043 Bidirectional semiconductor switch with hybrid construction |
| 05/10/1994 | US5311042 Low voltage monolithic protection diode with a low capacitance |
| 05/10/1994 | US5311041 Thin film transistor having an inverted stagger type structure |
| 05/10/1994 | US5311040 Thin film transistor with nitrogen concentration gradient |
| 05/10/1994 | US5311011 Quantum interference devices and methods for processing interference current |
| 05/10/1994 | US5311009 Quantum well device for producing localized electron states for detectors and modulators |
| 05/10/1994 | US5310692 Semiconductor integrated circuits of multilayer elements with silicon nitride and photoresists layer |
| 05/10/1994 | US5310691 Method of manufacturing semiconductor device including formation of alignment mark |
| 05/05/1994 | DE4336866A1 Thin-film FET on insulator for static RAM - has crystal-structure channel region providing source-drain current control for given channel width |
| 05/05/1994 | DE4309763C1 Gate-turn-off thyristor - with cathode side of semiconductor body having 3 successive planes at different heights with sharply defined edges |
| 05/05/1994 | DE4236953A1 Power semiconductor component, e.g. GTO thyristor, with integrated diode - has diode layer of diode zone enforced with several regions through which on diode turn-off build-up voltage at cathode is avoided |
| 05/05/1994 | DE4236644A1 Elektronisches Bauelement Electronic component |
| 05/04/1994 | EP0595775A1 Method of evaluating the dielectric layer of nonvolatile EPROM, EEPROM and flash-EEPROM memories |
| 05/04/1994 | EP0595648A1 A thin-film transistor circuit having a load device and a driver transistor and a method of producing the same |
| 05/04/1994 | EP0595606A1 A method for forming a thin two-dimensional particulate coating |
| 05/04/1994 | EP0595484A1 NMOS LDD PMOS HALO IC process for CMOS transistors |
| 05/04/1994 | EP0595464A2 Method for growing oxide layers in an integreted circuit fabrication process |
| 05/04/1994 | EP0595404A2 A current sensing circuit |
| 05/04/1994 | EP0595298A1 A semiconductor device having a hollow around a gate electrode and a method for producing the same |
| 05/04/1994 | EP0594994A2 Semiconductor diamond and process for producing the same |
| 05/04/1994 | EP0594978A2 Method for producing a field effect transistor |
| 05/04/1994 | EP0594920A1 Method of evaluating the gate oxide of non-volatile EPROM, EEPROM and flash-EEPROM memories |
| 05/03/1994 | US5309392 Semiconductor IC device using ferroelectric material in data storage cells with light assisted state transition |
| 05/03/1994 | US5309240 CCD linear image sensor including a CCD shift register on both sides of linearly arranged photosensor cells |
| 05/03/1994 | US5309022 Ni-Ge-Au ohmic contacts for GaAs and GaAlAs |
| 05/03/1994 | US5309010 Semiconductor device having improved thin film transistors |
| 05/03/1994 | US5309009 Integrated electrically adjustable analog transistor device |
| 05/03/1994 | US5309008 Semiconductor memory device having a trench capacitor |
| 05/03/1994 | US5309007 Junction field effect transistor with lateral gate voltage swing (GVS-JFET) |
| 05/03/1994 | US5309006 FET crossbar switch device particularly useful for microwave applications |
| 05/03/1994 | US5309005 Charge transfer device having a bent transfer channel |
| 05/03/1994 | US5309004 Semiconductors, gallium arsenide |
| 05/03/1994 | US5309003 Article comprising a real space transfer semiconductor device, and method of making the article |
| 05/03/1994 | US5309002 Semiconductor device with protruding portion |
| 05/03/1994 | US5309000 Electronic operating at a high temperature |
| 05/03/1994 | US5308999 MOS FET having a thin film SOI structure |
| 05/03/1994 | US5308998 Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film of a gate electrode |
| 05/03/1994 | US5308997 Self-aligned thin film transistor |
| 05/03/1994 | US5308996 TFT device |
| 05/03/1994 | US5308789 Method of preparing diffused silicon device substrate |
| 05/03/1994 | US5308782 Forming a vertical static random access memory cell using overlying thin film resistors and isolated electrodes acting as capacitors |
| 05/03/1994 | US5308780 Surface counter-doped N-LDD for high hot carrier reliability |
| 05/03/1994 | US5308779 High resolution |
| 05/03/1994 | US5308778 Method of formation of transistor and logic gates |
| 05/03/1994 | US5308776 Method of manufacturing SOI semiconductor device |
| 05/03/1994 | CA2001682C Thin film transistor having memory function and method for using thin film transistor as memory element |
| 04/28/1994 | WO1994009513A1 Interconnection structure for integrated circuits and method for making same |
| 04/28/1994 | DE4326846A1 Semiconductor device with insulation by dielectric element - has two-region dielectric layer on electrode body, with both regions of different dielectric constants |
| 04/27/1994 | EP0594442A2 Schottky junction device |
| 04/27/1994 | EP0594441A2 Semiconductor device |
| 04/27/1994 | EP0594340A2 Method for forming a bipolar transistor |
| 04/27/1994 | EP0594339A1 Method of manufacturing a CMOS device |
| 04/27/1994 | EP0594182A2 Anode bonding method and acceleration sensor obtained by using the anode bonding method |
| 04/27/1994 | EP0594177A1 Vertical MOSFET having trench covered with multilayer gate film |
| 04/27/1994 | EP0594111A1 High voltage MIS transistor and semiconductor device |
| 04/27/1994 | EP0594049A1 Insulated gate bipolar transistor and manufacturing method thereof |
| 04/27/1994 | EP0593982A2 Si/SiGe BARITT-diode |
| 04/27/1994 | EP0396663B1 Charge-coupled device |
| 04/27/1994 | CN1086047A Electric device matrix device, electro-optical display device, and semiconductor memory having thin-film transistors |
| 04/27/1994 | CN1086045A Method of manufacturing an integrated circuit and integrated circuit obtained by this method |