| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/16/1994 | CA2098967A1 Solid state suppressors |
| 01/13/1994 | DE4322549A1 MOS-transistor with high output voltage strength - has source-end of gate aligning with source region, while drain-end is at distance from drain region |
| 01/13/1994 | DE4223914A1 Vertical power component manufacturing method - interrupting epitaxial growth of lightly-doped semiconductor drift layer for implantation of non-doped ions |
| 01/12/1994 | EP0578512A1 Single crystal field emission device |
| 01/12/1994 | EP0578252A2 Semiconductor sensor device |
| 01/12/1994 | EP0577998A2 Field effect transistor |
| 01/12/1994 | EP0577776A1 Graded collector for inductive loads |
| 01/12/1994 | EP0577623A1 Thyristor with adjustable breakover voltage, and a process for manufacturing it |
| 01/11/1994 | US5278787 Semiconductor device and method of manufacturing the same |
| 01/11/1994 | US5278785 Non-volatile memory circuits and architecture |
| 01/11/1994 | US5278784 Non-volatile memory |
| 01/11/1994 | US5278459 Static semiconductor memory using thin film FET |
| 01/11/1994 | US5278449 Alloy having a low eutectic point |
| 01/11/1994 | US5278444 Planar varactor frequency multiplier devices with blocking barrier |
| 01/11/1994 | US5278443 Composite semiconductor device with Schottky and pn junctions |
| 01/11/1994 | US5278441 Method for fabricating a semiconductor transistor and structure thereof |
| 01/11/1994 | US5278440 Semiconductor memory device with improved tunneling characteristics |
| 01/11/1994 | US5278438 Electrically erasable and programmable read-only memory with source and drain regions along sidewalls of a trench structure |
| 01/11/1994 | US5278437 Stacked capacitor type semiconductor memory device and manufacturing method thereof |
| 01/11/1994 | US5278431 Diamond rectifying contact with undoped diamond layer |
| 01/11/1994 | US5278428 Thin film memory cell |
| 01/11/1994 | US5278427 Quantum collector hot-electron transistor |
| 01/11/1994 | US5278102 SOI device and a fabrication process thereof |
| 01/11/1994 | US5278099 Method for manufacturing a semiconductor device having wiring electrodes |
| 01/11/1994 | US5278096 Transistor fabrication method |
| 01/11/1994 | US5278095 Forming a junctions/p-n/ by controlling the diffusion and oxidation |
| 01/11/1994 | US5278087 Method of making a single transistor non-volatile electrically alterable semiconductor memory device with a re-crystallized floating gate |
| 01/11/1994 | US5278086 Forming polysilicon channel with two transistors within |
| 01/11/1994 | US5278083 Removal masking layer above a removable planarizing material |
| 01/11/1994 | US5278082 Method for electrically connecting an electrode and impurity-diffused layer formed on a semiconductor substrate |
| 01/11/1994 | US5278078 Method of manufacturing semiconductor device |
| 01/11/1994 | US5278076 Method of marking a lateral mos controlled thyristor |
| 01/11/1994 | US5277748 Manufacturing electronic device dielectrically isolated or formed on a monocrystalline semiconductor layer on an insulator and an integrated circuit |
| 01/06/1994 | WO1994000882A1 Thin film transistor, solid-state device, display device, and method for manufacturing thin film transistor |
| 01/06/1994 | WO1994000881A1 Single polysilicon layer flash e2prom cell |
| 01/06/1994 | WO1994000880A1 Semiconductor device |
| 01/06/1994 | WO1994000879A1 Pyroelectric sensor and production method therefor |
| 01/05/1994 | EP0577531A1 Protection diode for a vertical semiconductor device |
| 01/05/1994 | EP0577498A1 Vertical JFET transistor having an optimized operation and process for fabricating the same |
| 01/05/1994 | EP0577497A1 Vertical JFET transistor with low gate/substrate capacity and process for making the same |
| 01/05/1994 | EP0577137A1 A quantum effect device and a method of producing the same |
| 01/05/1994 | EP0576773A1 Integrated circuit entirely protected against ultraviolet rays |
| 01/05/1994 | EP0232298B1 Triac desensitized in regard to risks of restriking upon switching under reactive load |
| 01/05/1994 | DE4321053A1 Pressure-packed semiconductor device - has semiconductor substrate pressed against heat compensators to produce electrical contacts without solder |
| 01/05/1994 | DE4319071A1 Semiconductor device with low ON resistance - has groove in layer surface, and second conductivity layer(s) with exposed surface |
| 01/04/1994 | US5276723 Floating diffusion type charge detection circuit for use in charge transfer device |
| 01/04/1994 | US5276646 High voltage generating circuit for a semiconductor memory circuit |
| 01/04/1994 | US5276370 MOS-type semiconductor device drive circuit |
| 01/04/1994 | US5276350 Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits |
| 01/04/1994 | US5276347 Gate overlapping LDD structure |
| 01/04/1994 | US5276346 Semiconductor integrated circuit device having protective/output elements and internal circuits |
| 01/04/1994 | US5276344 Field effect transistor having impurity regions of different depths and manufacturing method thereof |
| 01/04/1994 | US5276340 Semiconductor integrated circuit having a reduced side gate effect |
| 01/04/1994 | US5276339 Semiconductor with a conductivity modulating-type MISFET |
| 01/04/1994 | US5275961 Method of forming insulated gate field-effect transistors |
| 01/04/1994 | US5275960 Method of manufacturing MIS type FET semiconductor device with gate insulating layer having a high dielectric breakdown strength |
| 01/04/1994 | US5275872 Limiting lateral diffusion of dopants forming source and drain regions providing stable channel region length |
| 01/04/1994 | US5275047 Rotation rate sensor |
| 12/29/1993 | EP0576375A1 Diode structure for pad protection |
| 12/29/1993 | EP0576263A2 Method for fabricing nano-scale devices and nano-scale device fabricated by that method |
| 12/29/1993 | EP0576001A1 Power semiconductor integrated circuit device with uniform electric field distribution |
| 12/29/1993 | EP0575965A2 Method of forming semiconductor crystal and semiconductor device |
| 12/29/1993 | EP0575892A1 Semiconducteur power module |
| 12/29/1993 | EP0575789A1 Monolithic millimetre-wave integrated circuit and method of its fabrication |
| 12/29/1993 | EP0575582A1 Gto module with stacked bypass diode |
| 12/28/1993 | US5274602 Large capacity solid-state memory |
| 12/28/1993 | US5274599 Flash-type nonvolatile semiconductor memory having precise erasing levels |
| 12/28/1993 | US5274588 Non volatile memory cell structure |
| 12/28/1993 | US5274587 Non-volatile programmable read only memory device having memory cells each implemented by a memory transistor and a switching transistor coupled in parallel and method of memorizing a data bit |
| 12/28/1993 | US5274524 Programmable protection circuit and its monolithic manufacturing |
| 12/28/1993 | US5274269 Ohmic contact for p-type group II-IV compound semiconductors |
| 12/28/1993 | US5274268 Electric circuit having superconducting layered structure |
| 12/28/1993 | US5274267 Bipolar transistor with low extrinsic base resistance and low noise |
| 12/28/1993 | US5274266 Permeable base transistor having selectively grown emitter |
| 12/28/1993 | US5274265 Bipolar transistor with a particular electrode structure |
| 12/28/1993 | US5274263 FET structure for use in narrow bandgap semiconductors |
| 12/28/1993 | US5274262 Protection device |
| 12/28/1993 | US5274261 Integrated circuit degradation resistant structure |
| 12/28/1993 | US5274259 High voltage transistor |
| 12/28/1993 | US5274257 Floating channel field effect transistor and a fabricating method thereof |
| 12/28/1993 | US5274256 Microwave FET |
| 12/28/1993 | US5274255 Structure for providing high resolution modulation of voltage potential in the vicinity of a surface |
| 12/28/1993 | US5274253 Semiconductor protection device against abnormal voltage |
| 12/28/1993 | US5273939 Method of assembling micromechanical sensors |
| 12/28/1993 | US5273937 Metal semiconductor device and method for producing the same |
| 12/28/1993 | US5273934 Method for producing a doped region in a substrate |
| 12/28/1993 | US5273930 Method of forming a non-selective silicon-germanium epitaxial film |
| 12/28/1993 | US5273929 Method of manufacture transistor having gradient doping during lateral epitaxy |
| 12/28/1993 | US5273926 Etching the floating gate layer on the gate dielectric layer to have exterior lateral margins and an orifice |
| 12/28/1993 | US5273923 Forming a gate dielectric layer on the active part of the substrate and overlying the tunnel implant region |
| 12/28/1993 | US5273922 High speed, low gate/drain capacitance DMOS device |
| 12/28/1993 | US5273921 Methods for fabricating a dual-gated semiconductor-on-insulator field effect transistor |
| 12/28/1993 | US5273920 Method of fabricating a thin film transistor using hydrogen plasma treatment of the gate dielectric/semiconductor layer interface |
| 12/28/1993 | US5273919 Method of producing a thin film field effect transistor |
| 12/28/1993 | US5273918 Using a photoresist with openings as etching, implantation and contacting masks |
| 12/28/1993 | US5273917 Method for manufacturing a conductivity modulation MOSFET |
| 12/28/1993 | US5273915 Method for fabricating bipolar junction and MOS transistors on SOI |
| 12/28/1993 | US5273912 Diffusing impurities of different types upwardly into the epitaxial layer |
| 12/28/1993 | US5273622 Longitudinally moving from station to station |
| 12/23/1993 | WO1993026048A1 Pn junction diode and its manufacture method |