| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/11/1995 | EP0633606A1 Method of manufacturing a power diode |
| 01/11/1995 | EP0633459A2 Capacitive pressure transducer structure and method for manufacturing the same |
| 01/11/1995 | EP0632925A1 Crystallographically aligned ferroelectric films usable in memories and method of making |
| 01/11/1995 | EP0632880A1 Micromechanical sensor. |
| 01/11/1995 | CN1027413C 垂直双极晶体管 Vertical bipolar transistor |
| 01/11/1995 | CN1027412C Charge-caupled device |
| 01/10/1995 | US5381047 Semiconductor integrated circuit having multiple silicon chips |
| 01/10/1995 | US5381032 Semiconductor device having a gate electrode of polycrystal layer and a method of manufacturing thereof |
| 01/10/1995 | US5381031 Semiconductor device with reduced high voltage termination area and high breakdown voltage |
| 01/10/1995 | US5381029 Semiconductor device including semiconductor layer having impurity region and method of manufacturing the same |
| 01/10/1995 | US5381028 Nonvolatile semiconductor memory with raised source and drain |
| 01/10/1995 | US5381027 Semiconductor device having a heterojunction and a two dimensional gas as an active layer |
| 01/10/1995 | US5381026 Insulated-gate thyristor |
| 01/10/1995 | US5381025 Insulated gate thyristor with gate turn on and turn off |
| 01/10/1995 | US5381014 Large area X-ray imager and method of fabrication |
| 01/10/1995 | US5380704 Superconducting field effect transistor with increased channel length |
| 01/10/1995 | US5380672 Dense vertical programmable read only memory cell structures and processes for making them |
| 01/10/1995 | US5380670 Method of fabricating a semiconductor device |
| 01/04/1995 | EP0632505A1 A vertical bipolar power transistor with buried base and interdigitated geometry |
| 01/04/1995 | EP0632504A2 Semiconductor device with BeTe-ZnSe graded band gap ohmic contact to II-VI semiconductor |
| 01/04/1995 | EP0632503A1 Integrated edge structure for high voltage semiconductor devices and related manufacturing process |
| 01/04/1995 | EP0632502A1 Bipolar power transistor with high collector breakdown voltage and related manufacturing process |
| 01/04/1995 | EP0632501A1 A semiconductor device including protection means |
| 01/04/1995 | EP0632492A2 Method of forming self-aligned LDD structures and low resistance contacts in thin film transistor technology devices |
| 01/04/1995 | EP0632491A2 Method of manufacturing a lateral bipolar transistor |
| 01/04/1995 | EP0632490A2 Method of manufacturing a lateral bipolar transistor |
| 01/04/1995 | EP0632489A2 Method of manufacturing a lateral bipolar transistor |
| 01/04/1995 | EP0632488A1 Process for plasma etching a conductive layer on a silicon wafer with a thin insulating layer in between |
| 01/04/1995 | EP0632486A2 Epitaxial semiconductor material and method of fabricating same |
| 01/04/1995 | EP0631693A1 A circuit construction for protective biasing |
| 01/04/1995 | EP0631689A1 Threshold adjustment in vertical dmos devices |
| 01/04/1995 | EP0616728A4 Scr protection structure and circuit with reduced trigger voltage. |
| 01/04/1995 | EP0609351A4 Bipolar junction transistor exhibiting improved beta and punch-through characteristics. |
| 01/03/1995 | USRE34821 High speed junction field effect transistor for use in bipolar integrated circuits |
| 01/03/1995 | US5379255 Three dimensional famos memory devices and methods of fabricating |
| 01/03/1995 | US5379253 High density EEPROM cell array with novel programming scheme and method of manufacture |
| 01/03/1995 | US5379089 Flash control device using cascade-connected thyristor and MOSFET |
| 01/03/1995 | US5378941 Bipolar transistor MOS transistor hybrid semiconductor integrated circuit device |
| 01/03/1995 | US5378923 Semiconductor device including a field effect transistor |
| 01/03/1995 | US5378922 HBT with semiconductor ballasting |
| 01/03/1995 | US5378921 Heterojunction multicollector transistor |
| 01/03/1995 | US5378920 High breakdown voltage semiconductor device |
| 01/03/1995 | US5378914 Semiconductor device with a particular source/drain and gate structure |
| 01/03/1995 | US5378913 MOS transistor having three gate electrodes |
| 01/03/1995 | US5378912 Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region |
| 01/03/1995 | US5378911 Structure of semiconductor device |
| 01/03/1995 | US5378910 Semiconductor memory device |
| 01/03/1995 | US5378909 Flash EEPROM cell having gap between floating gate and drain for high hot electron injection efficiency for programming |
| 01/03/1995 | US5378905 Ferroelectric field effect transistor with fluoride buffer and IV-VI ferroelectric |
| 01/03/1995 | US5378903 Semiconductor device with low on-voltage and large controllable turn-off current |
| 01/03/1995 | US5378901 Heterojunction bipolar transistor and method for producing the same |
| 01/03/1995 | US5378655 Method of manufacturing a semiconductor device comprising an insulated gate field effect device |
| 01/03/1995 | US5378652 Method of making a through hole in multi-layer insulating films |
| 01/03/1995 | US5378650 Semiconductor device and a manufacturing method thereof |
| 01/03/1995 | US5378644 Method for manufacturing a semiconductor device |
| 01/03/1995 | US5378643 Electrically programmable non-volatile semiconductor memory device and manufacturing method thereof |
| 01/03/1995 | US5378642 Method of making a silicon carbide junction field effect transistor device for high temperature applications |
| 01/03/1995 | US5378541 Silicon thin film member |
| 12/28/1994 | EP0631390A2 A power semiconductor circuit |
| 12/28/1994 | EP0631326A2 Semiconductor memory device and method of manufacturing same |
| 12/28/1994 | EP0631325A2 Semiconductor device with an oriented non single crystal silicon thin film and method for its preparation |
| 12/28/1994 | EP0631324A1 Method of making ohmic contacts to a complementary semiconductor device |
| 12/28/1994 | EP0631323A1 III-V Complementary heterostructure device with compatible non-gold ohmic contacts |
| 12/28/1994 | EP0631322A1 Microelectronic circuit struture and its manufacturing method |
| 12/28/1994 | EP0631321A1 Gate turn-off thyristor |
| 12/28/1994 | EP0631320A1 High voltage semiconductor structure |
| 12/28/1994 | EP0631319A1 Dielectric thin film device and manufacturing method thereof |
| 12/28/1994 | EP0631313A1 Semiconductor device containing a through hole |
| 12/28/1994 | EP0631308A2 Method of controlling gate oxide thickness in the fabrication of semiconductor devices |
| 12/28/1994 | EP0631302A2 Method of manufacturing a p-channel MOSFET |
| 12/28/1994 | EP0631297A2 Method for low temperature growth of epitaxial silicon and devices produced thereby |
| 12/28/1994 | EP0631248A2 Process and device composite simulation system and simulation method |
| 12/28/1994 | EP0631122A1 High sensitivity miniature pressure transducer |
| 12/28/1994 | EP0630523A1 Circuit construction for controlling saturation of a transistor |
| 12/28/1994 | EP0630513A1 A floating gate memory array device having improved immunity to write disturbance |
| 12/28/1994 | EP0422152B1 Edge doping processes for mesa structures in sos and soi devices |
| 12/28/1994 | EP0421446B1 Semiconductor device wherein n-channel MOSFET, p-channel MOSFET and nonvolatile memory cell are formed in one chip |
| 12/28/1994 | EP0274511B1 Single quantum well resonant tunneling semiconductor devices |
| 12/27/1994 | US5377031 Single crystal silicon tiles for liquid crystal display panels including light shielding layers |
| 12/27/1994 | US5376979 Slide projector mountable light valve display |
| 12/27/1994 | US5376906 CCD filter having comb-shaped characteristics |
| 12/27/1994 | US5376823 Lateral bipolar transistor and method of producing the same |
| 12/27/1994 | US5376822 Heterojunction type of compound semiconductor integrated circuit |
| 12/27/1994 | US5376821 Integrated emitter switching configuration using bipolar transistors |
| 12/27/1994 | US5376818 Stress sensitive semiconductor device |
| 12/27/1994 | US5376815 Semiconductor device having bipolar-mos composite element pellet suitable for pressure contacted structure |
| 12/27/1994 | US5376812 Semiconductor device |
| 12/27/1994 | US5376809 Surge protection device |
| 12/27/1994 | US5376578 Method of fabricating a semiconductor device with raised diffusions and isolation |
| 12/27/1994 | US5376577 Method of forming a low resistive current path between a buried contact and a diffusion region |
| 12/27/1994 | US5376574 Capped modular microwave integrated circuit and method of making same |
| 12/27/1994 | US5376573 Method of making a flash EPROM device utilizing a single masking step for etching and implanting source regions within the EPROM core and redundancy areas |
| 12/27/1994 | US5376572 Method of making an electrically erasable programmable memory device with improved erase and write operation |
| 12/27/1994 | US5376571 Method of making contact alignment for nonvolatile memory devices |
| 12/27/1994 | US5376570 Transistor having a nonuniform doping channel and method for fabricating the same |
| 12/27/1994 | US5376568 Method of fabricating high voltage complementary metal oxide semiconductor transistors |
| 12/27/1994 | US5376565 Fabrication of lateral bipolar transistor |
| 12/27/1994 | US5376564 Method of manufacturing a bipolar transistor having a decreased collector-base capacitance |
| 12/27/1994 | US5376563 Method of manufacturing an emitter base self alignment structure |
| 12/27/1994 | US5376562 Method for forming vertical transistor structures having bipolar and MOS devices |