| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/08/1994 | US5285097 Semiconductor sensor of electrostatic capacitance type |
| 02/08/1994 | US5285094 Vertical insulated gate semiconductor device with less influence from the parasitic bipolar effect |
| 02/08/1994 | US5285093 Semiconductor memory cell having a trench structure |
| 02/08/1994 | US5285089 Diamond and silicon carbide heterojunction bipolar transistor |
| 02/08/1994 | US5285088 Semiconductor device |
| 02/08/1994 | US5285087 Heterojunction field effect transistor |
| 02/08/1994 | US5285086 Semiconductor devices with low dislocation defects |
| 02/08/1994 | US5285084 Diamond schottky diodes and gas sensors fabricated therefrom |
| 02/08/1994 | US5285083 Inverted heterojunction bipolar device having undoped amorphous silicon layer |
| 02/08/1994 | US5285081 Field effect transistor having quasi one-dimensional electron gas confined under electron resonance |
| 02/08/1994 | US5284798 Method for forming an electrode for a compound semiconductor |
| 02/08/1994 | US5284786 Method of making a split floating gate EEPROM cell |
| 02/08/1994 | US5284785 Diffusionless source/drain conductor electrically-erasable, electrically-programmable read-only memory and methods for making and using the same |
| 02/08/1994 | US5284784 Formed to allow it to be utilized in a virtual ground buried bit-line array |
| 02/08/1994 | US5284782 Process for formation of delta-doped quantum well field effect transistor |
| 02/03/1994 | WO1994002962A1 Fermi threshold silicon-on-insulator field effect transistor |
| 02/03/1994 | WO1994002665A1 Semimetal-semiconductor heterostructures and multilayers |
| 02/03/1994 | DE4225171A1 Mfg. semiconductor element with differently doped layers - by wafer silicon@ bonding and wafer thinning |
| 02/03/1994 | CA2140450A1 Semimetal-semiconductor heterostructures and multilayers |
| 02/02/1994 | EP0581702A1 CMOS technology capacitor |
| 02/02/1994 | EP0581625A1 Multifunctional electronic device, in particular element with a negative dynamic resistance and corresponding method of fabrication |
| 02/02/1994 | EP0581475A1 Method of forming electrodes for trench capacitors |
| 02/02/1994 | EP0581369A1 Method of manufacturing a semiconductor device with a heterojunction manufactured by implantation with a carbon-halogen compound |
| 02/02/1994 | EP0581312A1 Non-volatile memory device and method of its manufacture |
| 02/02/1994 | EP0581305A2 Field-effect transistor and method for fabricating the same |
| 02/02/1994 | EP0581246A2 MOS-type semiconductor device |
| 02/02/1994 | EP0581239A2 Strained interband resonant tunneling negative resistance diode |
| 02/02/1994 | EP0581085A1 Radiation hardened CMOS structure using an implanted P guard structure and method for the manufacture thereof |
| 02/02/1994 | EP0580921A1 Control of saturation of integrated bipolar transistors |
| 02/02/1994 | CN1081536A Static induction device |
| 02/01/1994 | USH1287 Ion implanted diamond metal-insulator-semiconductor field effect transistor |
| 02/01/1994 | US5283545 Variable resistors |
| 02/01/1994 | US5283465 Semiconductors; oxidatio resistance |
| 02/01/1994 | US5283462 Semiconductors |
| 02/01/1994 | US5283456 Vertical gate transistor with low temperature epitaxial channel |
| 02/01/1994 | US5283455 Thin film field effect element having an LDD structure |
| 02/01/1994 | US5283454 Semiconductor device including very low sheet resistivity buried layer |
| 02/01/1994 | US5283453 Trench sidewall structure |
| 02/01/1994 | US5283452 Distributed cell monolithic mircowave integrated circuit (MMIC) field-effect transistor (FET) amplifier |
| 02/01/1994 | US5283449 Semiconductor integrated circuit device including two types of MOSFETS having source/drain region different in sheet resistance from each other |
| 02/01/1994 | US5283448 MESFET with indium gallium arsenide etch stop |
| 02/01/1994 | US5283445 Quantum semiconductor device employing quantum boxes for enabling compact size and high-speed operation |
| 02/01/1994 | US5283444 Increased well depth hact using a strained layer superlattice |
| 02/01/1994 | US5283202 IGBT device with platinum lifetime control having gradient or profile tailored platinum diffusion regions |
| 02/01/1994 | US5283201 High density power device fabrication process |
| 01/31/1994 | CA2101125A1 Field-effect transistor and method for fabricating the same |
| 01/27/1994 | DE4219774C1 Verfahren und Vorrichtung zum Stapeln von Substraten, die durch Bonden miteinander zu verbinden sind Method and device for stacking substrates, to be connected to each other by bonding |
| 01/26/1994 | EP0580452A1 Field effect trench transistor having lightly doped epitaxial region on the surface portion thereof |
| 01/26/1994 | EP0580256A1 Semiconductor device for high voltages |
| 01/26/1994 | EP0580242A1 A semiconductor component including protection means |
| 01/26/1994 | EP0580213A1 High voltage transistor having edge termination utilizing trench technology |
| 01/26/1994 | EP0579779A1 A single transistor non-volatile electrically alterable semiconductor memory device |
| 01/26/1994 | EP0424394B1 Means for reducing damage to jfets from electrostatic discharge events |
| 01/26/1994 | CN1081282A Electric circuit and method for forming the same |
| 01/25/1994 | US5282161 Eeprom cell having a read interface isolated from the write/erase interface |
| 01/25/1994 | US5282160 Non-volatile semiconductor memory having double gate structure |
| 01/25/1994 | US5282018 Power semiconductor device having gate structure in trench |
| 01/25/1994 | US5281872 Current detectable transistor having sense resistor with particular temperature coefficient |
| 01/25/1994 | US5281847 Groove structure for isolating elements comprising a GTO structure |
| 01/25/1994 | US5281843 Thin-film transistor, free from parasitic operation |
| 01/25/1994 | US5281840 High mobility integrated drivers for active matrix displays |
| 01/25/1994 | US5281839 Semiconductor device having a short gate length |
| 01/25/1994 | US5281837 Semiconductor memory device having cross-point DRAM cell structure |
| 01/25/1994 | US5281833 Insulated gate control thyristor |
| 01/25/1994 | US5281832 Bidirectional two-terminal thyristor |
| 01/25/1994 | US5281828 Thin film transistor with reduced leakage current |
| 01/25/1994 | US5281552 MOS fabrication process, including deposition of a boron-doped diffusion source layer |
| 01/25/1994 | US5281551 Gallium arsenide heteroepitaxial buffer layer |
| 01/25/1994 | US5281548 Plug-based floating gate memory |
| 01/25/1994 | US5281547 Method for manufacturing a field effect transistor |
| 01/25/1994 | US5281546 Method of fabricating a thin film transistor using hydrogen plasma treatment of the intrinsic silicon/doped layer interface |
| 01/25/1994 | US5281544 Method of manufacturing planar type polar transistors and combination bipolar/MIS type transistors |
| 01/25/1994 | US5281543 Fabrication method for quantum devices in compound semiconductor layers |
| 01/20/1994 | WO1994001892A1 Triple-gate flash eeprom memory and method for making same |
| 01/20/1994 | DE4321590A1 Thin film transistor for active matrix display drive circuit - has first TFT with source and drain electrodes on substrate, and second TFT with common gate electrode |
| 01/19/1994 | EP0579502A2 Solid state transient suppressor |
| 01/19/1994 | EP0579286A2 Method of fabricating a semiconductor device with Schottky barrier |
| 01/19/1994 | EP0578996A1 Method of doping a semiconductor surface by gaseous diffusion |
| 01/19/1994 | EP0578991A1 Bidirectional semiconductor switch |
| 01/19/1994 | EP0578973A1 Method of forming short-circuiting regions for insulated gate semiconductor devices |
| 01/19/1994 | EP0578926A1 A semiconductor device with sidewall channel and method of formation |
| 01/19/1994 | EP0578856A1 Micro-capacitor |
| 01/19/1994 | EP0578821A1 Semiconductor device |
| 01/19/1994 | CN1081023A 薄膜晶体管和有源矩阵液晶显示器件 And a thin film transistor active matrix liquid crystal display device |
| 01/19/1994 | CN1081022A Semiconductor device and method for forming the same |
| 01/18/1994 | US5280454 Electrically erasable programmable read-only memory with block-erase function |
| 01/18/1994 | US5280188 Method of manufacturing a semiconductor integrated circuit device having at least one bipolar transistor and a plurality of MOS transistors |
| 01/18/1994 | US5280187 Electrically programmable and erasable semiconductor memory and method of operating same |
| 01/18/1994 | US5280185 Semiconductor with diffusion barrier |
| 01/18/1994 | US5280182 Resonant tunneling transistor with barrier layers |
| 01/18/1994 | US5280181 Quantum semiconductor device that uses a quantum point contact for producing a quantum mechanical carrier wave with directivity |
| 01/18/1994 | US5280180 Interconnect structure for coupling semiconductor regions and method for making |
| 01/18/1994 | US5279992 Method of producing a wafer having a curved notch |
| 01/18/1994 | US5279985 Semiconductor device and method of fabrication thereof |
| 01/18/1994 | US5279982 Forming strip of isolation structure on semiconductor; then overcoating with barrier structure |
| 01/18/1994 | US5279981 Method of reducing the trap density of an oxide film for application to fabricating a nonvolatile memory cell |
| 01/18/1994 | US5279980 Sputtering |
| 01/18/1994 | US5279979 Semiconductor having diffusion region separated from the gap electrode and wiring layer |
| 01/18/1994 | US5279977 Method of manufacturing a semiconductor device for extracting a signal used to monitor potential of a high voltage island |
| 01/18/1994 | US5279888 Multilayer; silicon carbide, dielectric, electroconductive polysilicon and wiring layer |