| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/21/1994 | US5323034 Charge transfer image pick-up device |
| 06/21/1994 | US5323032 Comprising silicon and silicon-germanium alloy; doped areas |
| 06/21/1994 | US5323031 High speed performance |
| 06/21/1994 | US5323030 Field effect real space transistor |
| 06/21/1994 | US5323029 Static induction device |
| 06/21/1994 | US5323028 MOS composite static induction thyristor |
| 06/21/1994 | US5323022 Platinum ohmic contact to p-type silicon carbide |
| 06/21/1994 | US5323021 Semiconductor integrated circuit device having diode and bipolar transistor held in contact through oxygen-leakage film with emitter electrode |
| 06/21/1994 | US5323020 High performance MESFET with multiple quantum wells |
| 06/21/1994 | US5322815 Method for producing semiconductor device with multilayer leads |
| 06/21/1994 | US5322814 Multiple-quantum-well semiconductor structures with selective electrical contacts and method of fabrication |
| 06/21/1994 | US5322812 Improved method of fabricating antifuses in an integrated circuit device and resulting structure |
| 06/21/1994 | US5322809 Self-aligned silicide process |
| 06/21/1994 | US5322808 Method of fabricating inverted modulation-doped heterostructure |
| 06/21/1994 | US5322807 Method of making thin film transistors including recrystallization and high pressure oxidation |
| 06/21/1994 | US5322806 Method of producing a semiconductor device using electron cyclotron resonance plasma CVD and substrate biasing |
| 06/21/1994 | US5322805 Spinning a doped glass, densifying and diffusion into wafers |
| 06/21/1994 | US5322804 Forming a lateral drift, drain extension by doping with an increased impurity concentration |
| 06/21/1994 | US5322803 Process for the manufacture of a component to limit the programming voltage and to stabilize the voltage incorporated in an electric device with EEPROM memory cells |
| 06/21/1994 | US5322802 Method of fabricating silicon carbide field effect transistor |
| 06/21/1994 | CA1330371C Linear deflection amplifier with energy recovery |
| 06/17/1994 | CA2085524A1 Field effect transistor and method for manufacturing the same |
| 06/16/1994 | DE4341941A1 Bipolar transistor with delta-doped p-type base and drift region - has conduction band gap in weakly doped drift region with conduction path min. suited to preferential injection of lighter electrons |
| 06/16/1994 | DE4325708C1 Prodn. of electrically conducting point made of doped silicon@ - by forming mask with opening on substrate and producing doped silicon@ paint on exposed surface of substrate |
| 06/16/1994 | DE4242367A1 Microelectronic component for e.g. high temp. superconductor - has energising occurring as excitation parameter with high frequency waves, esp. in light frequency range |
| 06/16/1994 | DE4242098A1 Electroforming of stacked thyristor diodes for long-term reliability - involves application of excessive current pulse to one chip of stack which has weak point with e.g. uncompensated surface charges |
| 06/15/1994 | EP0601951A2 Process for improving sheet resistance of a fet device gate |
| 06/15/1994 | EP0601901A1 Etching method for heterostructure of III-V compound material |
| 06/15/1994 | EP0601823A1 Field effect transistor with integrated schottky diode clamp |
| 06/15/1994 | EP0601747A2 Nonvolatile memory device and method for manufacturing same |
| 06/15/1994 | EP0601723A2 Integrated circuit fabrication |
| 06/15/1994 | EP0601692A1 Electronic device incorporating artificial super lattice |
| 06/15/1994 | EP0601652A2 Electronic device manufacture using ion implantation |
| 06/15/1994 | EP0601590A2 Semiconductor memory cell |
| 06/15/1994 | EP0601568A1 Charge-coupled device having high charge-transfer efficiency over a broad temperature range |
| 06/15/1994 | EP0601541A2 Compound semiconductor device and method for fabricating the same |
| 06/15/1994 | EP0601513A2 Method for forming deposited film |
| 06/15/1994 | EP0601298A1 Method for protecting the periphery of a semiconductor wafer during an etching step |
| 06/15/1994 | EP0601093A1 Igbt process and device with platinum lifetime control |
| 06/15/1994 | EP0601068A1 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
| 06/15/1994 | EP0600897A1 Power semiconductor component and process for producing it. |
| 06/15/1994 | EP0179138B1 A method of forming a composite semiconductor structure |
| 06/15/1994 | CN1025091C Method for production of delta-mixed quantum trap field effect transistor |
| 06/14/1994 | US5321302 Emitter layer, base structure having region of carbon-doped gallium arsenide, collector layer |
| 06/14/1994 | US5321301 Semiconductor device |
| 06/14/1994 | US5321295 Insulated gate bipolar transistor and method of fabricating the same |
| 06/14/1994 | US5321293 Integrated device having MOS transistors which enable positive and negative voltage swings |
| 06/14/1994 | US5321291 Power MOSFET transistor |
| 06/14/1994 | US5321289 Vertical MOSFET having trench covered with multilayer gate film |
| 06/14/1994 | US5321288 Nonvolatile memory array in which each cell has a single floating gate having two tunnelling windows |
| 06/14/1994 | US5321284 High frequency FET structure |
| 06/14/1994 | US5321283 High frequency JFET |
| 06/14/1994 | US5321282 Integrated circuit having a charge coupled device and MOS transistor and method for manufacturing thereof |
| 06/14/1994 | US5321281 Insulated gate semiconductor device and method of fabricating same |
| 06/14/1994 | US5321279 Base ballasting |
| 06/14/1994 | US5321278 High electron mobility transistor |
| 06/14/1994 | US5320975 Doping substrate forming isolation region, delineating polysilicon lands, forming well regions on substrate, forming insulator encapsulated conductive polysilicon stud, forming self-aligned source and drain regions and contact region |
| 06/14/1994 | US5320974 Dilectric films formed on sidewalls of gate electrode are removed for self-alignment to selectively dope end portion of source and drain region of substrate, forming p-type conductivity |
| 06/14/1994 | US5320973 Method of fabricating a thin-film transistor and wiring matrix device |
| 06/14/1994 | US5320972 Method of forming a bipolar transistor |
| 06/14/1994 | CA1330194C Unstrained defect-free epitaxial mismatched heterostructures and method of fabrication |
| 06/09/1994 | WO1994013019A1 IMPROVED STRUCTURE FOR CdSe TFT |
| 06/09/1994 | WO1994013018A1 Thin film transistor having a triple layer dielectric gate insulator, method of fabricating such a thin film transistor and an active matrix display having a plurality of such thin film transistors |
| 06/09/1994 | WO1994013017A1 Power mosfet in silicon carbide |
| 06/09/1994 | WO1994013009A1 Transistor fabrication methods and methods of forming multiple layers of photoresist |
| 06/09/1994 | WO1994012886A1 A device for measuring force components in monocristalline material, a method for manufacturing such a device and a use of such a device |
| 06/09/1994 | DE4341177A1 Selektives, epitaxiales Silizium für eine Innen/Außen-Basisverbindung Selective, epitaxial silicon for indoor / outdoor base compound |
| 06/09/1994 | CA2150573A1 Thin film transistor having a triple layer dielectric gate insulator, method of fabricating such a thin film transistor and an active matrix display having a plurality of such thin film transistors |
| 06/09/1994 | CA2149538A1 Transistor fabrication methods and methods of forming multiple layers of photoresist |
| 06/09/1994 | CA2110790A1 Compound semiconductor device and method for fabricating the same |
| 06/08/1994 | EP0600814A1 Transistor with deep submicron channel |
| 06/08/1994 | EP0600810A1 Ovenvoltage protection device |
| 06/08/1994 | EP0600694A1 Improved transistor device layout |
| 06/08/1994 | EP0600693A2 Selective trenching and emitter base self alignment structure |
| 06/08/1994 | EP0600664A2 A dry etching method of a silicon thin film |
| 06/08/1994 | EP0600643A2 Article comprising a ballistic heterojunction bipolar transistor |
| 06/08/1994 | EP0600596A2 Improved bipolar transistor |
| 06/08/1994 | EP0600505A1 Method of manufacturing a semiconductor device comprising a titanium silicide layer |
| 06/08/1994 | EP0600437A2 Gate defined transistor |
| 06/08/1994 | EP0600241A2 MOS driven diode |
| 06/08/1994 | EP0600229A1 Power semiconductor device with protective means |
| 06/08/1994 | EP0600149A2 Method of making a self aligned static induction transistor |
| 06/08/1994 | EP0600063A1 Method of manufacturing cmos semiconductor components with local interconnects. |
| 06/07/1994 | US5319594 Semiconductor memory device including nonvolatile memory cells, enhancement type load transistors, and peripheral circuits having enhancement type transistors |
| 06/07/1994 | US5319593 Memory array with field oxide islands eliminated and method |
| 06/07/1994 | US5319242 Semiconductor package having an exposed die surface |
| 06/07/1994 | US5319239 Polysilicon-collector-on-insulator polysilicon-emitter bipolar |
| 06/07/1994 | US5319236 Semiconductor device equipped with a high-voltage MISFET |
| 06/07/1994 | US5319235 Monolithic IC formed of a CCD, CMOS and a bipolar element |
| 06/07/1994 | US5319232 Transistor having a lightly doped region |
| 06/07/1994 | US5319231 Insulated gate semiconductor device having an elevated plateau like portion |
| 06/07/1994 | US5319230 Non-volatile storage device |
| 06/07/1994 | US5319229 Semiconductor nonvolatile memory with wide memory window and long data retention time |
| 06/07/1994 | US5319228 Semiconductor memory device with trench-type capacitor |
| 06/07/1994 | US5319227 Low-leakage JFET having increased top gate doping concentration |
| 06/07/1994 | US5319226 Method of fabricating an ion sensitive field effect transistor with a Ta2 O5 hydrogen ion sensing membrane |
| 06/07/1994 | US5319225 Output terminal of a solid-state image device |
| 06/07/1994 | US5319223 Electron supply layer of indium-aluminum-arsenic alloy and schottky contact layer of indium-gallium-aluminum phosphide |
| 06/07/1994 | US5319222 MOS gated thyristor having on-state current saturation capability |
| 06/07/1994 | US5319221 Semiconductor device with MISFET-controlled thyristor |