| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 03/03/1994 | WO1994005045A1 Conjugated polymer - acceptor heterojunctions; diodes, photodiodes, and photovoltaic cells |
| 03/03/1994 | DE4229307A1 Conductor component for protecting microelectronic system from overvoltage - comprises bidirectional thyristor diode with highly-doped surface region and high gradient of free charge carrier at predefined distance from oppositely doped base region |
| 03/03/1994 | DE4228837A1 Heterostructure FET useful for EHP circuits - has gradually doped surface layer for low back coupling capacitance between gate and drain |
| 03/02/1994 | EP0585003A2 Group III-V compound semiconductor device including a group IV element doped region |
| 03/02/1994 | EP0584236A1 Blue-green laser diode. |
| 03/01/1994 | US5291441 Electrically programmable read only memory device with timing detector for increasing address decoding signal |
| 03/01/1994 | US5291439 Semiconductor memory cell and memory array with inversion layer |
| 03/01/1994 | US5291058 Semiconductor device silicon via fill formed in multiple dielectric layers |
| 03/01/1994 | US5291051 ESD protection for inputs requiring operation beyond supply voltages |
| 03/01/1994 | US5291050 MOS device having reduced gate-to-drain capacitance |
| 03/01/1994 | US5291049 Mosfet with buried element isolation regions |
| 03/01/1994 | US5291048 Non-volatile storage device with impurities in nitride toward source side |
| 03/01/1994 | US5291047 Floating gate type electrically programmable read only memory cell with variable threshold level in erased state |
| 03/01/1994 | US5291046 Semiconductor memory device |
| 03/01/1994 | US5291040 Deactivatable thyristor with turn-off current path |
| 03/01/1994 | US5290727 Method for suppressing charge loss in EEPROMs/EPROMS and instabilities in SRAM load resistors |
| 03/01/1994 | US5290725 Semiconductor memory device and a method for producing the same |
| 03/01/1994 | US5290723 Method of manufacturing a nonvolatile semiconductor memory |
| 03/01/1994 | US5290721 Depositing gate oxide film, electroconductive layer as float-ing gate, patterning, oxidation, forming second electrocon-ductive layer, etching |
| 03/01/1994 | US5290720 Transistor with inverse silicide T-gate structure |
| 03/01/1994 | US5290719 Method of making complementary heterostructure field effect transistors |
| 03/01/1994 | US5290717 Method of manufacturing semiconductor devices having a resist patern coincident with gate electrode |
| 03/01/1994 | US5290716 Method of manufacturing semiconductor devices |
| 02/23/1994 | EP0583911A1 MOS transistor channel structure |
| 02/23/1994 | EP0583897A2 Field-effect transistor with structure for suppressing hot-electron effects, and method of fabricating the transistor |
| 02/23/1994 | EP0583625A2 Method of increasing the layout efficiency of dies on a wafer, and increasing the ratio of I/O area to active area per die |
| 02/22/1994 | US5289483 Semiconductor device having a mesa and method of manufacturing same |
| 02/22/1994 | US5289411 Floating gate memory array device having improved immunity to write disturbance |
| 02/22/1994 | US5289384 Device simulator for semiconductor device |
| 02/22/1994 | US5289174 Liquid crystal display device |
| 02/22/1994 | US5289043 Switching system for selectively enabling electrical power to be applied to plural loads |
| 02/22/1994 | US5289038 Bump electrode structure and semiconductor chip having the same |
| 02/22/1994 | US5289030 Semiconductor device with oxide layer |
| 02/22/1994 | US5289029 Semiconductor integrated circuit device having wells biased with different voltage levels |
| 02/22/1994 | US5289028 High power semiconductor device with integral on-state voltage detection structure |
| 02/22/1994 | US5289027 Ultrathin submicron MOSFET with intrinsic channel |
| 02/22/1994 | US5289026 Array of electrically erasable non-volatile memory devices |
| 02/22/1994 | US5289024 Bipolar transistor with diffusion compensation |
| 02/22/1994 | US5289022 CCD shift register having a plurality of storage regions and transfer regions therein |
| 02/22/1994 | US5289020 Heterojunction bipolar transistor |
| 02/22/1994 | US5289019 Insulated gate bipolar transistor |
| 02/22/1994 | US5289017 Solid state imaging device having silicon carbide crystal layer |
| 02/22/1994 | US5289016 Borosilicate glass and silicon nitride passivatin film covers amorphous silicon film; excellent stability |
| 02/22/1994 | US5289015 Planar fet-seed integrated circuits |
| 02/22/1994 | US5289014 Semiconductor device having a vertical quantum well via and method for making |
| 02/22/1994 | US5289013 Phonon and charge carrier separation in quantum wells |
| 02/22/1994 | US5288666 Heating silicon substrate and formed metal layer; oxidation to form oxide layer; one-step |
| 02/22/1994 | US5288658 Process for the formation of an amorphous silicon deposited film with intermittent irradiation of inert gas plasma |
| 02/22/1994 | US5288654 Method of making a mushroom-shaped gate electrode of semiconductor device |
| 02/22/1994 | US5288653 Process of fabricating an insulated-gate field effect transistor |
| 02/22/1994 | CA2021585C Integrated mos circuit with adjustable voltage level |
| 02/17/1994 | WO1994003929A1 Semiconductor device |
| 02/17/1994 | WO1994003922A1 High density power device structure and fabrication process |
| 02/17/1994 | WO1993018428A3 Head-mounted display system |
| 02/17/1994 | CA2141566A1 Cubic metal oxide thin film epitaxially grown on silicon |
| 02/16/1994 | EP0583119A1 Programmable contact structure and its forming method |
| 02/16/1994 | EP0583037A1 A semiconductor protection component |
| 02/16/1994 | EP0583028A1 A semiconductor device comprising a vertical insulated gate field effect device and a method of manufacturing such a device |
| 02/16/1994 | EP0583023A1 Trenched DMOS transistor fabrication using six masks |
| 02/16/1994 | EP0583022A2 A method of manufacturing an insulated gate field effect device |
| 02/16/1994 | EP0582986A2 Semiconductor device and method of manufacturing the same |
| 02/16/1994 | EP0582797A1 Laterally sensitive accelerometer and method for making |
| 02/16/1994 | EP0582710A1 Electrically programmable memory cell |
| 02/16/1994 | EP0335965B1 Phantom esd protection circuit employing e-field crowding |
| 02/16/1994 | CN1082254A 半导体器件 Semiconductor devices |
| 02/15/1994 | US5287393 Charge transfer device equipped with charge signal detector improved in sensitivity as well as in voltage amplification |
| 02/15/1994 | US5287319 Nonvolatile semiconductor memory device |
| 02/15/1994 | US5287318 Semiconductor memory |
| 02/15/1994 | US5287205 Gradation method for driving liquid crystal device with ramp and select signal |
| 02/15/1994 | US5287072 Semiconductor device for improving high-frequency characteristics and avoiding chip cracking |
| 02/15/1994 | US5286997 Method for forming an isolated, low resistance epitaxial subcollector for bipolar transistors |
| 02/15/1994 | US5286996 Triple self-aligned bipolar junction transistor |
| 02/15/1994 | US5286995 Isolated resurf LDMOS devices for multiple outputs on one die |
| 02/15/1994 | US5286994 Semiconductor memory trap film assembly having plural laminated gate insulating films |
| 02/15/1994 | US5286989 Solid state imaging device |
| 02/15/1994 | US5286987 Charge transfer device |
| 02/15/1994 | US5286984 Conductivity modulated MOSFET |
| 02/15/1994 | US5286983 Thin-film-transistor array with capacitance conductors |
| 02/15/1994 | US5286981 Turn-off power semiconductor component, and also process for producing it |
| 02/15/1994 | US5286673 Method for forming position alignment marks in a manufacturing SOI device |
| 02/15/1994 | US5286665 Method of manufacturing MDS memory device having a LDD structure and a visor-like insulating layer |
| 02/15/1994 | US5286664 Method for fabricating the LDD-MOSFET |
| 02/15/1994 | US5286663 Methods for producing thin film transistor having a diode shunt |
| 02/15/1994 | US5286662 Method for manufacturing field effect transistor |
| 02/15/1994 | US5286661 Method of forming a bipolar transistor having an emitter overhang |
| 02/15/1994 | US5286659 Method for producing an active matrix substrate |
| 02/15/1994 | US5286655 Method of manufacturing a semiconductor device of an anode short circuit structure |
| 02/15/1994 | US5286341 Process for producing micro-mechanical structures |
| 02/15/1994 | US5285690 Pressure sensor having a laminated substrate |
| 02/15/1994 | CA1327078C Floating gate memories |
| 02/10/1994 | DE4326052A1 Vertical field effect transistor - has thickness of semiconductor layer selected to be greater than extent of depletion layer during blocking of p=n junction |
| 02/10/1994 | DE4325348A1 Semiconductor device with p=n junction, e.g n=channel transistor - has impurity diffusion region between first impurity region and impurity concentration peak |
| 02/09/1994 | EP0582486A2 A thin film transistor pair and a process for fabricating the same |
| 02/09/1994 | EP0582387A1 A metallic wiring board and a method for producing the same |
| 02/09/1994 | EP0582376A1 Displacement element, cantilever probe and information processing apparatus using cantilever probe |
| 02/09/1994 | CN1081789A Semiconductor device and method for forming the same |
| 02/08/1994 | USRE34535 Oxide/nitride stack formed over polysilicon control gate; high capacitance |
| 02/08/1994 | US5285109 At least one layer contains silicon or sulfur |
| 02/08/1994 | US5285101 Semiconductor device |
| 02/08/1994 | US5285100 Semiconductor switching device |