H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/1994
12/06/1994	US5371378 Diamond metal base/permeable base transistor and method of making same
12/06/1994	US5371040 Method for manufacturing semiconductor components with short switching time
12/06/1994	US5371038 Using growth and process apparatus that precisely controls the processing environment; minimization of contaminant deposition
12/06/1994	US5371030 Method of fabricating field oxide isolation for a contactless flash EPROM cell array
12/06/1994	US5371028 Tunneling insulator layer structure between the floating gate and control gate: dual layer formed of outer silicon oxide layer and an inner silicon oxynitride layer
12/06/1994	US5371027 Method of manufacturing a semiconductor device having a non-volatile memory with an improved tunnel oxide
12/06/1994	US5371025 Reduces extent of channel overlap between a gate electrode and source/drain regions; improved signal-to-noise ratio
12/06/1994	US5371024 Semiconductor device and process for manufacturing the same
12/06/1994	US5371022 Method of forming a novel vertical-gate CMOS compatible lateral bipolar transistor
12/06/1994	US5370973 Forming T-shaped resist cavity by pattering photoresist layers by exposure to light, filling cavity with metal and removing rest of metal layer except cavity
12/06/1994	US5370769 Etching gas containing at least sulfur fluoride capable of releasing sulfur into a plasma
12/06/1994	US5370767 Electron cyclotron resonance plasma of chlorine/helium mixture
11/1994
11/30/1994	EP0626756A2 Output circuit having three power supply lines
11/30/1994	EP0626730A2 Nanofabricated semiconductor device
11/30/1994	EP0626729A1 Method for producing a lateral bipolar transistor
11/30/1994	EP0626099A1 High density electronic circuit modules
11/30/1994	EP0419586B1 Integrated circuit comprising a vertical transistor
11/30/1994	CN1095863A Switching transistor arrangement
11/30/1994	CN1095860A A method for making a semiconductor device of silicon-on-insulator structure
11/30/1994	CN1095859A Process for fabricating semiconductor and process for fabricating semifabricating
11/29/1994	US5369609 Floating gate memory array with latches having improved immunity to write disturbance, and with storage latches
11/29/1994	US5369544 Silicon-on-insulator capacitive surface micromachined absolute pressure sensor
11/29/1994	US5369434 Charge transfer device with high speed transfer rate
11/29/1994	US5369357 CCD imager with test structure
11/29/1994	US5369304 Conductive diffusion barrier of titanium nitride in ohmic contact with a plurality of doped layers therefor
11/29/1994	US5369303 Self-aligned contact process
11/29/1994	US5369300 Integrated circuits with dopes for electrical resistance
11/29/1994	US5369298 Bipolar transistor having an emitter with interdigitated comb-shaped inner and outer edger
11/29/1994	US5369297 Field effect transistor including silicon oxide film and nitrided oxide film as gate insulator film and manufacturing method thereof
11/29/1994	US5369295 Fermi threshold field effect transistor with reduced gate and diffusion capacitance
11/29/1994	US5369294 Field effect transistor and method of fabricating
11/29/1994	US5369293 Charge-coupled device having reduced cross-talk
11/29/1994	US5369291 Voltage controlled thyristor
11/29/1994	US5369288 Semiconductor device for switching a ballistic flow of carriers
11/29/1994	US5369060 Method for dicing composite wafers
11/29/1994	US5369045 Method for forming a self-aligned lateral DMOS transistor
11/29/1994	US5369044 Method for producing a semiconductor device
11/29/1994	US5369043 Forming a multilayer element with insulating layer, cap, dopes and masking
11/29/1994	US5369042 Enhanced performance bipolar transistor process
11/29/1994	US5368915 Active matrix substrate
11/29/1994	US5368686 Dry etching method for W polycide using sulfur deposition
11/24/1994	WO1994027325A1 Integrated circuit structure and method
11/24/1994	WO1994027324A1 A lateral bipolar transistor with variable base width and a method for controlling the base width
11/24/1994	WO1994027316A1 Method of manufacturing side walls and semiconductor device having side walls
11/24/1994	WO1994027313A1 Metal boride ohmic contact on diamond and method for making same
11/24/1994	DE4417154A1 Thin-film transistor and method for the production thereof
11/23/1994	EP0625801A1 Ohmic electrode and process for fabricating the same
11/23/1994	EP0625797A1 Integrated structure current sensing resistor for power MOS devices, particularly for overload self-protected power MOS devices
11/23/1994	EP0625277A1 Flat screen having individually dipole-protected microdots
11/23/1994	EP0393135B1 Semiconductor heterostructures
11/22/1994	US5367483 Electrically erasable and programmable read-only memory cells with a single polysilicon level and method for producing the same
11/22/1994	US5367274 Quantum wave guiding electronic switch
11/22/1994	US5367195 Structure and method for a superbarrier to prevent diffusion between a noble and a non-noble metal
11/22/1994	US5367190 Polysilicon semiconductor element having resistivity and work function controlled to required values
11/22/1994	US5367189 Vertical semiconductor device
11/22/1994	US5367186 Bounded tub fermi threshold field effect transistor
11/22/1994	US5367185 Non-volatile semiconductor memory with third electrode covering control gate
11/22/1994	US5367184 Vertical JFET transistor with optimized bipolar operating mode and corresponding method of fabrication
11/22/1994	US5367183 Semiconductor device with complementary transistors
11/22/1994	US5367182 Compound semiconductor device for reducing the influence of resistance anisotropy on operating characteristics thereof
11/22/1994	US5367181 Microminiature vacuum tube
11/22/1994	US5367180 Thin-film semiconductor device with field plate
11/22/1994	US5367179 An electroconductive alloy layer on a dielectric substrate consisting of a high melting metal, oxygen or/and nitrogen; no projections protrude from conductive layer; no short circuiting
11/22/1994	US5366932 Semi-conductor chip packaging method and semi-conductor chip having interdigitated gate runners with gate bonding pads
11/22/1994	US5366931 Fabrication method for on-chip decoupling capacitor
11/22/1994	US5366928 Method of manufacturing a semiconductor device, in which a metal conductor track is provided on a surface of a semiconductor body
11/22/1994	US5366917 Method for fabricating polycrystalline silicon having micro roughness on the surface
11/22/1994	US5366915 Process of fabricating floating gate type field effect transistor having drain region gently varied in impurity profile
11/22/1994	US5366914 Vertical power MOSFET structure having reduced cell area
11/22/1994	US5366913 Method of manufacturing semiconductor device employing oxide sidewalls
11/22/1994	US5366912 Depositing a film of diffusion preventative layer on a film ofa second amorphous semiconductor
11/22/1994	US5366910 Process for the production of thin film transistors using on SOG film
11/22/1994	US5366909 Method for fabricating thin film transistor
11/22/1994	US5366907 Method of fabricating a BI-CMOS integrated circuit device
11/22/1994	US5366849 Photoresist pattern formation through etching where the imaging exposure changes in a given direction in the desired pattern and inclined vapor deposition is utilized to deposit a film
11/17/1994	EP0624943A1 Serial current limiting device
11/17/1994	EP0624909A2 Lateral MOSFET with contact structure
11/17/1994	EP0624907A2 Semiconductor device, heterojunction bipolar transistor, and high electron mobility transistor
11/17/1994	EP0624900A2 Method of micro-machining an integrated sensor on the surface of a silicon wafer
11/17/1994	EP0624282A1 Fermi threshold field effect transistor with reduced gate and diffusion capacitance
11/17/1994	EP0606350A4 Gallium arsenide mesfet imager.
11/17/1994	DE4416735A1 Method for producing a gate electrode with a Polycide (Polycid) structure
11/17/1994	DE4416696A1 Halbleitervorrichtung und Herstellungsverfahren A semiconductor device and manufacturing method
11/17/1994	DE4315723A1 MOS semiconductor component
11/16/1994	CN1095188A 半导体存储器件 A semiconductor memory device
11/15/1994	US5365477 Dynamic random access memory device
11/15/1994	US5365111 Stable local interconnect/active area silicide structure for VLSI applications
11/15/1994	US5365109 MIS semiconductor device with polysilicon gate electrode
11/15/1994	US5365102 Schottky barrier rectifier with MOS trench
11/15/1994	US5365099 Semiconductor device having high energy sustaining capability and a temperature compensated sustaining voltage
11/15/1994	US5365098 Non-volatile semiconductor memory having improved erasure characteristics
11/15/1994	US5365097 Vertical epitaxial SOI transistor, memory cell and fabrication methods
11/15/1994	US5365096 Yttrium lower electrode, yttrium oxide dielectric film, upper electrode
11/15/1994	US5365094 Semiconductor device including ferroelectric nonvolatile memory
11/15/1994	US5365093 Solid-state imaging device with tapered channel regions
11/15/1994	US5365090 Hetero bipolar transistor and method of manufacturing the same
11/15/1994	US5365089 Double heterojunction bipolar transistor and the method of manufacture therefor
11/15/1994	US5365086 Thyristors having a common cathode
11/15/1994	US5365085 Power semiconductor device with a current detecting function
11/15/1994	US5365083 Semiconductor device of band-to-band tunneling type

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