Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
---|
10/04/1994 | US5353138 Display device and support plate with transverse electrode arrangement |
10/04/1994 | US5352927 Self-aligned contact studs for semiconductor structures |
10/04/1994 | US5352924 Bipolar layout for improved performance |
10/04/1994 | US5352917 A semiconductor has a fluorinated inorganic dielectric film |
10/04/1994 | US5352916 Fully CMOS-type SRAM device with grounding wire having contact holes |
10/04/1994 | US5352915 Semiconductor component having two integrated insulated gate field effect devices |
10/04/1994 | US5352914 Field-effect transistor with structure for suppressing hot-electron effects, and method of fabricating the transistor |
10/04/1994 | US5352912 Graded bandgap single-crystal emitter heterojunction bipolar transistor |
10/04/1994 | US5352911 Dual base HBT |
10/04/1994 | US5352910 Semiconductor device with a buffer structure |
10/04/1994 | US5352909 Field effect transistor and method for manufacturing the same |
10/04/1994 | US5352908 Diamond Schottky diode with oxygen |
10/04/1994 | US5352907 Thin-film transistor |
10/04/1994 | US5352905 Semiconductor surge suppressor |
10/04/1994 | US5352624 Lateral bipolar transistor |
10/04/1994 | US5352619 Method for improving erase characteristics and coupling ratios of buried bit line flash EPROM devices |
10/04/1994 | US5352618 Method for forming thin tunneling windows in EEPROMs |
10/04/1994 | US5352291 Method of annealing a semiconductor |
09/29/1994 | WO1994022171A1 Single polysilicon layer e2prom cell |
09/29/1994 | WO1994022170A1 Bipolar transistor structure using ballast resistor |
09/29/1994 | WO1994022167A1 Semiconductor structure, and method of manufacturing same |
09/29/1994 | WO1994021474A1 Method of fabricating group iii-v compound semiconductor devices using selective etching |
09/29/1994 | WO1994021102A2 Direct multilevel thin-film transistor production method |
09/29/1994 | DE4309764A1 Power MOSFET |
09/28/1994 | EP0617472A2 Semiconductor light emitting/detecting devices |
09/28/1994 | EP0617469A1 Current - controlled resonant tunneling device |
09/28/1994 | EP0617468A1 Short-channel MOS-transistor and its fabrication method |
09/28/1994 | EP0617462A2 Hydrogen containing amorphous carbon |
09/28/1994 | EP0617461A2 Oxynitride dielectric process for IC manufacture |
09/28/1994 | EP0617363A2 Defective cell substitution in EEprom array |
09/28/1994 | EP0617313A2 Light valve device with a protection circuit including a semiconductor device |
09/28/1994 | EP0617309A1 Active matrix panel |
09/28/1994 | EP0617267A2 A semiconductor device with a piezoresistive pressure sensor |
09/28/1994 | EP0616728A1 Scr protection structure and circuit with reduced trigger voltage. |
09/28/1994 | EP0616726A1 Layered superlattice material applications |
09/28/1994 | EP0616724A1 Pyroelectric sensor and production method therefor. |
09/28/1994 | EP0616723A1 Process for fabricating layered superlattice materials |
09/28/1994 | EP0616688A1 Piezoresistive silicon pressure sensor design. |
09/28/1994 | CN1092907A Semiconductor device |
09/28/1994 | CN1026041C Semiconductor device having polysilicon thin-film |
09/27/1994 | US5351255 Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same |
09/27/1994 | US5351163 High Q monolithic MIM capacitor |
09/27/1994 | US5351128 Semiconductor device having reduced contact resistance between a channel or base layer and a contact layer |
09/27/1994 | US5350948 Semiconductor device |
09/27/1994 | US5350944 Insulator films on diamonds |
09/27/1994 | US5350942 Low resistance silicided substrate contact |
09/27/1994 | US5350940 Enhanced mobility metal oxide semiconductor devices |
09/27/1994 | US5350938 Nonvolatile semiconductor memory circuit with high speed read-out |
09/27/1994 | US5350937 Non-volatile memory device having a floating gate |
09/27/1994 | US5350936 Linear field effect transistor |
09/27/1994 | US5350935 Semiconductor device with improved turn-off capability |
09/27/1994 | US5350934 Conductivity modulation type insulated gate field effect transistor |
09/27/1994 | US5350932 High voltage structures with oxide isolated source and resurf drift region in bulk silicon |
09/27/1994 | US5350931 Double barrier resonant propagation filter |
09/27/1994 | US5350930 Cluster compound microelectronic component |
09/27/1994 | US5350712 Integrated circuits |
09/27/1994 | US5350709 Diffusing silicon from silicon oxide film into gallium arsenide |
09/27/1994 | US5350707 Method for making a capacitor having an electrode surface with a plurality of trenches formed therein |
09/27/1994 | US5350702 Method for fabricating a dual-gate metal-semiconductor field effect transistor |
09/27/1994 | US5350699 Heat resistance, silicon carbide |
09/27/1994 | US5350698 Multilayer polysilicon gate self-align process for VLSI CMOS device |
09/22/1994 | DE4409202A1 Thin-film transistor and method for its production |
09/22/1994 | DE4404270A1 Semiconductor storage device which can write and erase information electrically and a method for the production of the same |
09/22/1994 | DE4400840A1 Semiconductor device comprising a bipolar transistor and method of production of the same |
09/22/1994 | DE4308958A1 Method for producing bipolar transistors |
09/21/1994 | EP0616378A2 Luminescent silicon |
09/21/1994 | EP0616372A2 Short channel trenched DMOS transistor |
09/21/1994 | EP0616371A2 Silicon on insulator semiconductor device and its fabrication method |
09/21/1994 | EP0616370A2 Semiconductor bipolar device including SiGe and method for manufacturing the same |
09/21/1994 | EP0616369A1 MOS-type semiconductor device |
09/21/1994 | EP0616368A2 Nonvolatile semiconductor memory that eases the dielectric strength requirements |
09/21/1994 | EP0616365A1 MOS-controlled power semiconductor device |
09/21/1994 | EP0616361A1 Formation of silicided junctions in deep sub-micron MOSFETS by defect enhanced CoSi2 formation |
09/21/1994 | EP0616334A1 Non-volatile semiconductor memory device having floating gate |
09/21/1994 | EP0616332A1 Nonvolatile flash-EEPROM memory array |
09/21/1994 | EP0616241A2 A method of manufacturing a liquid crystal display device with excimer laser |
09/21/1994 | EP0537240B1 Mis-structure thin-film field effect transistors wherein the insulator and the semiconductor are made of organic material |
09/21/1994 | EP0536227B1 Process for manufacturing pmos-transistors and pmos-transistors thus produced |
09/21/1994 | CN1092559A Transistor and method for fabrication thereof |
09/21/1994 | CN1092558A A semiconductor device in a thin active layer with high breakdown voltage |
09/21/1994 | CN1092557A A dielectrically isolated semiconductor device and a method for its manufacture |
09/21/1994 | CN1092556A MIS semiconductor device and method for fabricating the same |
09/21/1994 | CN1092555A Power VFET device and method |
09/21/1994 | CN1092548A Nonvolatile semiconductor memories |
09/20/1994 | US5349553 Nonvolatile semiconductor memory device |
09/20/1994 | US5349495 System for securing and electrically connecting a semiconductor chip to a substrate |
09/20/1994 | US5349494 Semiconductor device with capacitor insulating film and method for fabricating the same |
09/20/1994 | US5349303 Electrical charge transfer apparatus |
09/20/1994 | US5349232 Protection diode for a vertical semiconductor component |
09/20/1994 | US5349230 Diode circuit for high speed switching transistor |
09/20/1994 | US5349228 Dual-gated semiconductor-on-insulator field effect transistor |
09/20/1994 | US5349225 Field effect transistor with a lightly doped drain |
09/20/1994 | US5349224 Power semiconductor device |
09/20/1994 | US5349223 High current high voltage vertical PMOS in ultra high voltage CMOS |
09/20/1994 | US5349222 Single gate MOS type nonvolatile memory and operating method thereof |
09/20/1994 | US5349221 Semiconductor memory device and method of reading out information for the same |
09/20/1994 | US5349220 Split gate semiconductor device |
09/20/1994 | US5349214 Complementary heterojunction device |
09/20/1994 | US5349213 Turn-off power semiconductor device |
09/20/1994 | US5349212 Semiconductor device having thyristor structure |