H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/1994
12/27/1994	US5376561 High density electronic circuit modules
12/27/1994	US5376559 Method of manufacturing a lateral field effect transistor
12/27/1994	US5376309 Boride materials for electronic elements and method of preparing the same
12/27/1994	US5376241 Electrochemically etching to form porous layer on exposed surface of wafer
12/25/1994	CA2122118A1 Method for low temperature growth of epitaxial silicon and devices produced thereby
12/22/1994	WO1994029960A1 Controlled semiconductor capacitors
12/22/1994	WO1994029903A1 Laterally graded emitter for bipolar transistor
12/22/1994	WO1994029896A1 Semiconductor device and production method thereof
12/22/1994	DE4421186A1 Thin-film transistor and method for its production
12/21/1994	EP0630060A1 Controllable superconducting device
12/21/1994	EP0630055A2 Method for fabricating polycrystalline silicon having micro roughness on the surface
12/21/1994	EP0630054A1 Thyristor with insulated gate and method for operating the same
12/21/1994	EP0630053A2 Heterojunction type bipolar transistor
12/21/1994	EP0629902A1 Continuous film feed device and method therefor
12/20/1994	US5375094 Nonvolatile semiconductor memory system with a plurality of erase blocks
12/20/1994	US5374849 Conductive layer connection structure of semiconductor device
12/20/1994	US5374847 Nonvolatile semiconductor memory device having a passivation film
12/20/1994	US5374846 Bipolar transistor with a particular base and collector regions
12/20/1994	US5374844 Bipolar transistor structure using ballast resistor
12/20/1994	US5374843 Field effect transistor
12/20/1994	US5374837 Thin film transistor array substrate acting as an active matrix substrate
12/20/1994	US5374836 High current fermi threshold field effect transistor
12/20/1994	US5374835 Field effect transistor using compound semiconductor
12/20/1994	US5374831 Quantum well phonon modulator
12/20/1994	US5374578 Ozone gas processing for ferroelectric memory circuits
12/20/1994	US5374576 Method of fabricating stacked capacitor cell memory devices
12/20/1994	US5374575 Method for fabricating MOS transistor
12/20/1994	US5374574 Method for the fabrication of transistor
12/20/1994	US5374573 Method of forming a self-aligned thin film transistor
12/20/1994	US5374572 Method of forming a transistor having an offset channel section
12/20/1994	US5374571 Vertical power MOS device with increased ruggedness and method of fabrication
12/20/1994	US5374570 Atomic layer epitaxy
12/20/1994	US5374569 Method for forming a BiCDMOS
12/20/1994	US5374568 Method for forming a base link in a bipolar transistor
12/20/1994	US5374567 Operational amplifier using bipolar junction transistors in silicon-on-sapphire
12/20/1994	US5374481 Monocrystalline silicon with hydrogen-doped silicon interface; reproducibiltiy, performance
12/20/1994	US5374328 Method of fabricating group III-V compound
12/20/1994	CA2014048C Semiconductor device isolation
12/15/1994	DE4420026A1 Semiconductor storage device
12/14/1994	EP0629003A1 Electronic devices with thin-film circuit elements forming a sampling circuit
12/14/1994	EP0629002A1 Semiconductor device and ferroelectric capacitor
12/14/1994	EP0629001A1 Integrated monolithic structure of a vertical bipolar transistor and a vertical MOSFET transistor
12/14/1994	EP0628996A1 Semiconductor device
12/14/1994	EP0628994A2 Heat treatment method for semiconductor substrate
12/14/1994	EP0628991A1 Semiconductor device having reduced carrier lifetime and method of manufacturing the same
12/14/1994	EP0628827A1 IC device including a level detection circuit of an operating voltage
12/14/1994	EP0628215A1 Bipolar junction transistor exhibiting suppressed kirk effect
12/14/1994	EP0471737B1 Semiconductor device
12/13/1994	US5373465 Non-volatile semiconductor memory cell
12/13/1994	US5373379 Repairable liquid crystal display panel with laser fusible links
12/13/1994	US5373201 Power transistor
12/13/1994	US5373191 Semiconductor device and method of producing the same
12/13/1994	US5373186 Bipolar transistor with monoatomic base layer between emitter and collector layers
12/13/1994	US5373185 Multilayer vertical transistor having an overlay electrode connected to the top layer of the transistor and to the transistor substrate
12/13/1994	US5373183 Integrated circuit with improved reverse bias breakdown
12/13/1994	US5373180 Planar isolation technique for integrated circuits
12/13/1994	US5373178 Semiconductor device
12/13/1994	US5373176 Structurally matched ferroelectric device
12/13/1994	US5373168 Two-dimensional electron gas field effect transistor including an improved InGaAs channel layer
12/13/1994	US5372964 Method of producing pillar-shaped DRAM and ROM devices
12/13/1994	US5372960 Method of fabricating an insulated gate semiconductor device
12/13/1994	US5372959 Thin film transistor having a multi-layer stacked channel and its manufacturing method
12/13/1994	US5372958 Process for fabricating a thin film semiconductor device
12/13/1994	US5372957 Multiple tilted angle ion implantation MOSFET method
12/13/1994	US5372956 Method for making direct contacts in high density MOS/CMOS processes
12/13/1994	US5372954 Method of fabricating an insulated gate bipolar transistor
12/13/1994	US5372953 Increasing oxygen content of oxide film to form borosilicate glass which can be chemically removed completely
12/13/1994	US5372658 Disordered crystalline semiconductor
12/08/1994	WO1994028586A1 Semiconductor device having high breakdown strength
12/08/1994	WO1994028585A1 Scr electrostatic discharge protection for integrated circuits
12/08/1994	WO1994028579A1 Method of forming insulating oxide film and semiconductor device
12/08/1994	WO1994028577A2 Method of producing a structure with narrow line width and devices obtained
12/08/1994	WO1994028427A1 Microelectromechanical lateral accelerometer
12/08/1994	DE4318466A1 Micromechanical sensor and method for its production
12/08/1994	CA2164339A1 Semiconductor device having high breakdown strength
12/07/1994	EP0627769A2 Resonant tunneling diode with reduced valley current
12/07/1994	EP0627768A2 Field effect transistor with a Schottky gate
12/07/1994	EP0627767A1 Process for fabricating isolated vertical bipolar and JFET transistors and capacitors
12/07/1994	EP0627763A1 Process for improving the adhesion between dielectric layers at their interface in semiconductor devices manufacture
12/07/1994	EP0627761A2 Epitaxial overgrowth method and devices
12/07/1994	EP0627125A1 Improved method for forming pnp and npn bipolar transistor in a same substrate
12/07/1994	EP0627124A1 Fet chip with heat-extracting bridge
12/07/1994	EP0608376A4 Voltage variable capacitor.
12/07/1994	EP0456682B1 P-n-p diamond transistor
12/06/1994	US5371704 Nonvolatile memory device with compensation for over-erasing operation
12/06/1994	US5371699 Non-volatile ferroelectric memory with folded bit lines and method of making the same
12/06/1994	US5371400 Semiconductor diode structure
12/06/1994	US5371398 Thin film transistor
12/06/1994	US5371396 Field effect transistor having polycrystalline silicon gate junction
12/06/1994	US5371394 Double implanted laterally diffused MOS device and method thereof
12/06/1994	US5371393 EEPROM cell with improved tunneling properties
12/06/1994	US5371391 MOS semiconductor device and method of fabricating the same
12/06/1994	US5371389 High current gain
12/06/1994	US5371388 Electron wave interference devices, methods for modulating an interference current and electron wave branching and/or combining devices and methods therefor
12/06/1994	US5371387 Lamination of buffer, undoped channel and N-type electron supplying layer sequentially deposited on a semi-insulating semiconductor substrate; epitaxial structure
12/06/1994	US5371385 Surge protection device
12/06/1994	US5371383 Highly oriented diamond film field-effect transistor
12/06/1994	US5371382 Used for high temperature and radiation hardened electronics
12/06/1994	US5371381 Process for producing single crystal semiconductor layer and semiconductor device produced by said process
12/06/1994	US5371380 Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1×10.sup.(19) (cm-3) or less

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