H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/1994
10/25/1994	US5359210 Integrated circuit
10/25/1994	US5359206 Thin film transistor substrate, liquid crystal display panel and liquid crystal display equipment
10/25/1994	US5358904 Semiconductor device
10/25/1994	US5358900 Minimization to increase operating speed and improve density
10/25/1994	US5358899 Oxygen assisted ohmic contact formation to n-type gallium arsenide
10/25/1994	US5358886 Method of making integrated circuit structure with programmable conductive electrode/interconnect material
10/25/1994	US5358885 Method of manufacturing a field effect transistor with a T-shaped gate electrode and reduced capacitance
10/25/1994	US5358884 Dual purpose collector contact and isolation scheme for advanced bicmos processes
10/25/1994	US5358883 Forming collector region by doping substrate with retrograde doping profile; positioning emitter electrode between base and collector electrodes
10/25/1994	US5358882 Producing bipolar transistor in substrate, surrounding with insulating trench, depositing silicon dioxide layer by thermal decomposition of tetraethyl silicate, structuring to form active regions
10/25/1994	US5358879 Forming polysilicon sidegate adjacent gate electrode, forming nitride spacer, implanting heavy neutral ions into gate region to electrically short gate electrode and sidegate together
10/25/1994	US5358878 Forming mask which covers active zone at surface of multilayer structure, etching isotropically to substrate, underetching under mask to shape mesa, depositing dielectric uniformly, etching dielectric, removing mask
10/25/1994	US5358809 Methods of fabricating thin film structures by imaging through the substrate in different directions
10/25/1994	US5358666 Ohmic electrode materials for semiconductor ceramics and semiconductor ceramics elements made thereof
10/25/1994	US5358600 Method of making silicon quantum wires
10/25/1994	US5357807 Micromachined differential pressure transducers
10/25/1994	CA2046358C Liquid crystal display
10/25/1994	CA1332696C Indium phosphide devices
10/25/1994	CA1332695C Method of making an article comprising a heteroepitaxial structure, and article produced thereby
10/20/1994	DE4412671A1 Output driver field-effect transistor of a charge-coupled image-sensor component
10/19/1994	EP0620600A2 Split-gate flash EEPROM cell and array with low voltage erasure
10/19/1994	EP0620599A1 Lightly-doped drain MOSFET with improved breakdown characteristics
10/19/1994	EP0620597A1 Protection arrangement against overvoltage
10/19/1994	EP0620596A1 Monolithic diode grid
10/19/1994	EP0620588A2 A method of manufacturing a recessed insulated gate field-effect semiconductor device
10/19/1994	EP0619921A1 Electronic component and process for making it
10/19/1994	CN1093832A Tetrode turn-off thyrictor
10/18/1994	US5357137 Semiconductor device
10/18/1994	US5357135 Dmost junction breakdown enhancement
10/18/1994	US5357134 Nonvolatile semiconductor device having charge trap film containing silicon crystal grains
10/18/1994	US5357133 Semiconductor memory device having improved write characteristic
10/18/1994	US5357130 Low-noise cryogenic MOSFET
10/18/1994	US5357129 Solid state imaging device having high-sensitivity and low-noise characteristics by reducing electrostatic capacity of interconnection
10/18/1994	US5357128 Charge detecting device
10/18/1994	US5357127 Electrooptical integrated ciruits; photodetector and amplifier on single chip
10/18/1994	US5357126 MOS transistor with an integrated protection zener diode
10/18/1994	US5357125 Power switching semiconductor device including SI thyristor and MOSFET connected in cascade
10/18/1994	US5357120 Compound semiconductor device and electric power converting apparatus using such device
10/18/1994	US5356830 Semiconductor device and its manufacturing method
10/18/1994	US5356827 Method of manufacturing semiconductor device
10/18/1994	US5356825 Ion implanting semiconductor film to be a resistor, patterning heat treating in an atmosphere of hydrogen and ammonia, heat treating again for film activation
10/18/1994	US5356824 Process for the production of a thin film transistor having a double gate and an optical mask
10/18/1994	US5356823 Method of manufacturing a semiconductor device
10/18/1994	US5356821 Method for manufacturing semiconductor integrated circuit device
10/18/1994	US5355569 Method of making sensor
10/13/1994	WO1994023457A1 Majority carrier power diode
10/13/1994	WO1994023456A1 Layered system with an electrically activatable layer
10/13/1994	WO1994023455A1 High-voltage, vertical-trench semiconductor device
10/13/1994	WO1994023454A1 A pedestal lead frame for supporting a semiconductor chip
10/13/1994	WO1994022664A1 Photohardening molding apparatus with recoater travelling stroke regulating mechanism
10/13/1994	DE4411859A1 Schalttransistoranordnung Switching transistor arrangement
10/13/1994	DE4411851A1 Semiconductor device having trench isolation structure and production method therefor
10/13/1994	DE4407279C1 Semiconductor component for the overvoltage protection of MOSFETs and IGBTs
10/13/1994	CA2159349A1 Layered system with an electrically activable layer
10/12/1994	EP0619613A2 A heterojunction bipolar transistor
10/12/1994	EP0619612A2 Semiconductor device with a bipolar transistor formed in a layer of semiconductor material provided on an insulating substrate
10/12/1994	EP0619611A1 Semiconductor device including a vertical transistor
10/12/1994	EP0619610A1 Semiconductor device including a lateral transistor
10/12/1994	EP0619601A2 Self-aligned thin-film transistor constructed using lift-off technique
10/12/1994	EP0619495A1 Process for manufacturing tunnel sensors
10/12/1994	EP0619494A1 Electron tunneling accelerometer
10/12/1994	EP0619471A1 A method of manufacturing a motion sensor
10/12/1994	EP0613590A4 Die mounting with uniaxial conductive adhesive.
10/12/1994	CN1093491A Mis semiconductor device and method of fabricating the same
10/11/1994	US5355235 Organic field effect element having organic layers with different carrier concentrations
10/11/1994	US5355022 Stacked-type semiconductor device
10/11/1994	US5355021 Ohmic contact for p-type GaAs
10/11/1994	US5355015 Semiconductor device on an integrated circuit substrate
10/11/1994	US5355014 Semiconductor device with integrated RC network and Schottky diode
10/11/1994	US5355012 Semiconductor device
10/11/1994	US5355011 Insulated gate field effect transistor having LDD structure and method of making the same including a channel stop having a peak impurity concentration, the channel stop provided below a channel region
10/11/1994	US5355009 Semiconductor device and method of fabricating same
10/11/1994	US5355008 Diamond shaped gate mesh for cellular MOS transistor array
10/11/1994	US5355007 Devices for non-volatile memory, systems and methods
10/11/1994	US5355005 Self-doped complementary field effect transistor
10/11/1994	US5355003 Semiconductor device having stable breakdown voltage in wiring area
10/11/1994	US5355002 Structure of high yield thin film transistors
10/11/1994	US5355000 Assymetric quantum well infrared detector
10/11/1994	US5354707 Forming intrinsic silicon epitaxial layer on doped silicon layer of first conductivity type, forming quantum dots, embedding in second intrinsic epitaxial layer, forming doped layer of second conductivity type
10/11/1994	US5354702 Electrical erasable and programmable read-only memory and manufacturing method therefor
10/11/1994	US5354700 Method of manufacturing super channel TFT structure
10/11/1994	US5354696 Forming surface zone; heat treatment to remove non-bonded halogens
10/11/1994	US5354695 Membrane dielectric isolation IC fabrication
10/11/1994	US5354412 Forming intermetallic containing arsenic
10/11/1994	US5353638 Sensor for measuring air flow
10/11/1994	CA1332399C Zeolite l
10/06/1994	DE4411442A1 Non-volatile semiconductor memory having a cell structure which is suitable for high-speed operation and a low power supply voltage
10/06/1994	DE4310444A1 Fast power diode
10/05/1994	EP0618720A2 Method and apparatus for reducing blooming in output of a CCD image sensor
10/05/1994	EP0618679A1 High reliable integrated circuit structure for MOS power devices
10/05/1994	EP0618622A1 High voltage transistor
10/05/1994	EP0618621A1 Non-volatile semiconductor memory device
10/05/1994	EP0618610A2 Method of making a compound semiconductor device
10/05/1994	EP0618535A2 EEprom card with defective cell substitution
10/05/1994	EP0618450A1 Acceleration sensor
10/05/1994	EP0618435A2 Capacitive pressure sensor
10/05/1994	EP0617841A1 Method of making semiconductor components with recovery of the substrate by electrochemical means
10/05/1994	EP0617839A1 Method of making semiconductor components, in particular on GaAs or InP, with recovery of the substrate by chemical means
10/04/1994	US5353252 Semiconductor integrated circuit device having digit line biasing means
10/04/1994	US5353246 Programmable semiconductor antifuse structure and method of fabricating

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