| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 09/20/1994 | US5349207 Semiconductors |
| 09/20/1994 | US5349205 Thin-film transistor array with anodic oxide for use in a liquid crystal display |
| 09/20/1994 | US5349203 Organic electric-field switching device |
| 09/20/1994 | US5349202 Tunneling transistor |
| 09/20/1994 | US5349201 NPN heterojunction bipolar transistor including antimonide base formed on semi-insulating indium phosphide substrate |
| 09/20/1994 | US5348906 Method for manufacturing semiconductor device |
| 09/20/1994 | US5348899 Method of fabricating a bottom and top gated thin film transistor |
| 09/20/1994 | US5348897 Transistor fabrication methods using overlapping masks |
| 09/20/1994 | US5348895 LDMOS transistor with self-aligned source/backgate and photo-aligned gate |
| 09/20/1994 | US5348773 Silicon dioxide film from hydrogen silsequioxane resin |
| 09/20/1994 | US5348618 Anodizing, etching |
| 09/20/1994 | CA1332072C Esd low resistance input structure |
| 09/15/1994 | WO1994020990A1 A quantum well device |
| 09/15/1994 | WO1994020989A1 A technique for making memory cells in a way which suppresses electrically conductive stringers |
| 09/15/1994 | WO1994020988A1 Semiconductor device with integrated rc network and schottky diode |
| 09/15/1994 | WO1994020982A1 Self-aligned thin-film transistor constructed using lift-off technique |
| 09/15/1994 | DE4408557A1 Power semiconductor arrangement |
| 09/15/1994 | DE4407732A1 Non-volatile semiconductor memory with NAND-logic cell structure |
| 09/15/1994 | DE4406867A1 Acceleration pickup (sensor) (accelerometer) |
| 09/15/1994 | DE4400438A1 Diode |
| 09/15/1994 | DE4342231A1 Composite semiconductor device and method for isolating elements of the same |
| 09/15/1994 | DE4316855C1 Microelectronic circuit structure and method for its production |
| 09/14/1994 | EP0615293A1 Insulated gate semiconductor device and method of fabricating same |
| 09/14/1994 | EP0615292A1 Insulated gate bipolar transistor |
| 09/14/1994 | EP0615291A1 A high breakdown voltage semiconductor device having a semi-insulating layer |
| 09/14/1994 | EP0615288A2 Method of manufacturing a semiconductor device provided with an isolation region |
| 09/14/1994 | EP0615287A2 Dielectric isolated type semiconductor device provided with bipolar element |
| 09/14/1994 | EP0615282A2 Methods for making MOSFET's with drain separated from channel |
| 09/14/1994 | EP0614573A1 Process for manufacturing a power integrated circuit with a vertical power component |
| 09/14/1994 | EP0614567A1 Nonvolatile random access memory device. |
| 09/13/1994 | US5347161 Stacked-layer structure polysilicon emitter contacted p-n junction diode |
| 09/13/1994 | US5347157 Multilayer structure having a (111)-oriented buffer layer |
| 09/13/1994 | US5347156 Lateral bipolar transistor with a particular collector structure |
| 09/13/1994 | US5347155 Semiconductor device having a lateral DMOST with breakdown voltage raising zones and provisions for exchanging charge with the back gate region |
| 09/13/1994 | US5347154 Light valve device using semiconductive composite substrate |
| 09/13/1994 | US5347153 Short channel transistors |
| 09/13/1994 | US5347148 Semi-insulating compound semiconductor device |
| 09/13/1994 | US5347146 Polysilicon thin film transistor of a liquid crystal display |
| 09/13/1994 | US5347144 Thin-layer field-effect transistors with MIS structure whose insulator and semiconductor are made of organic materials |
| 09/13/1994 | US5347141 Multiterminal lateral S-shaped negative differential conductance device |
| 09/13/1994 | US5347140 Resonant electron transfer device |
| 09/13/1994 | US5347104 Heater control circuit |
| 09/13/1994 | US5346851 Method of fabricating Shannon Cell circuits |
| 09/13/1994 | US5346850 Crystallization and doping of amorphous silicon on low temperature plastic |
| 09/13/1994 | US5346849 Method of making a groove structure for isolation between elements comprising a GTO thyristor |
| 09/13/1994 | US5346840 Method of producing heterojunction bipolar transistor having narrow band gap base type |
| 09/13/1994 | US5346839 Sidewall doping technique for SOI transistors |
| 09/13/1994 | US5346838 Method for fabricating an insulated gate control thyristor |
| 09/13/1994 | US5346835 Integrated circuits |
| 09/13/1994 | US5346834 Method for manufacturing a semiconductor device and a semiconductor memory device |
| 09/13/1994 | US5346833 Simplified method of making active matrix liquid crystal display |
| 09/13/1994 | US5346581 Method of making a compound semiconductor device |
| 09/13/1994 | US5346576 Method of manufacturing IC card |
| 09/08/1994 | DE4407210A1 Semiconductor memory device circuit and semiconductor memory device structure realising the latter |
| 09/08/1994 | DE4406861A1 Ohmsche Kontaktstruktur für eine hochintegrierte Halbleitervorrichtung und Herstellungsverfahren The ohmic contact structure for a highly integrated semiconductor device and manufacturing method |
| 09/08/1994 | DE4306320A1 Method for increasing the dielectric strength of a multilayer semiconductor component |
| 09/08/1994 | DE3051139C2 Integrated circuit with variable phase shifter |
| 09/07/1994 | EP0614232A1 Reference diode in bipolar integrated circuit |
| 09/07/1994 | EP0614231A2 PN junction and method of manufacturing the same |
| 09/07/1994 | EP0614230A2 Semiconductor device with recessed gate and production method thereof |
| 09/07/1994 | EP0614229A2 Junction field-effect transistor (JFET), semiconductor integrated circuit device including JFET, and method of manufacturing the same |
| 09/07/1994 | EP0614228A1 MOS-controlled thyristor |
| 09/07/1994 | EP0614227A2 Heterojunction bipolar transistor |
| 09/07/1994 | EP0614226A1 Gate electrode using stacked layers of TiN and polysilicon |
| 09/07/1994 | EP0614225A1 Charge coupled device |
| 09/07/1994 | EP0614223A1 Non-volatile memory with protection diode |
| 09/07/1994 | EP0614214A2 Semiconductor etching process |
| 09/07/1994 | EP0613590A1 Die mounting with uniaxial conductive adhesive. |
| 09/07/1994 | EP0524950B1 Process for manufacturing mechanical micro-structures |
| 09/06/1994 | US5345417 EPROM device with metallic source connections and fabrication thereof |
| 09/06/1994 | US5345324 Active matrix liquid crystal display device having two light shielding layers |
| 09/06/1994 | US5345194 FET having two gate bonding pads for use in high frequency oscillator |
| 09/06/1994 | US5345104 Flash memory cell having antimony drain for reduced drain voltage during programming |
| 09/06/1994 | US5345103 Semiconductor device |
| 09/06/1994 | US5345102 Bipolar transistor having collector electrode penetrating emitter and base regions |
| 09/06/1994 | US5345101 High voltage semiconductor structure and method |
| 09/06/1994 | US5345100 Semiconductor rectifier having high breakdown voltage and high speed operation |
| 09/06/1994 | US5345099 Semiconductor device |
| 09/06/1994 | US5345097 Heterojunction bipolar transistor including collector region of InP and method of fabricating the same |
| 09/06/1994 | US5345096 Turn-off high-power semiconductor component with low inductive housing |
| 09/06/1994 | US5345095 Self arc-extinguishing thyristor and method of manufacturing the same |
| 09/06/1994 | US5345094 Semiconductor device |
| 09/06/1994 | US5344794 Method of making a semiconductor chip |
| 09/06/1994 | US5344793 Formation of silicided junctions in deep sub-micron MOSFETs by defect enhanced CoSi2 formation |
| 09/06/1994 | US5344790 Implanting fast diffusing dope into source region and slow diffusing dope into drain region |
| 09/06/1994 | US5344789 Method of manufacturing vertical DMOS transistor with high off-breakdown-voltage and low on-resistance |
| 09/06/1994 | US5344788 Method of making field effect transistor |
| 09/06/1994 | US5344786 Method of fabricating self-aligned heterojunction bipolar transistors |
| 09/06/1994 | US5344523 Diaphragm over cavity in single crystal silicon wafer |
| 09/06/1994 | US5343731 Semiconductor accelerometer |
| 09/01/1994 | WO1994019830A1 High saturation current, low leakage current fermi threshold field effect transistor |
| 09/01/1994 | WO1994019829A1 Semiconductor device comprising deuterium atoms |
| 09/01/1994 | WO1994019828A1 Fabrication process for cmos device with jfet |
| 09/01/1994 | WO1994019823A1 Method of making a dual-poly non-volatile memory device using a third polysilicon layer |
| 09/01/1994 | DE4405682A1 Structure of a semiconductor arrangement |
| 08/31/1994 | EP0613191A2 Channel structure for field effect transistor |
| 08/31/1994 | EP0613190A2 Schottky junction type field effect transistor and method of manufacturing the same |
| 08/31/1994 | EP0613189A2 Channel structure for field effect transistor and method of manufacturing the same |
| 08/31/1994 | EP0613188A1 A charge transferring device having an FDA type charge detecting section and a method for producing the same |
| 08/31/1994 | EP0613187A2 High voltage MIS field effect transistor |