| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/01/1995 | EP0637049A1 Process for making an electric conducting point of doped silicon and application of the process for manufacturing components used in vacuum electronics |
| 02/01/1995 | EP0637035A1 Circuit structure for a memory matrix and corresponding manufacturing method |
| 02/01/1995 | EP0636866A2 Method and circuit arrangement for measuring the temperature of a barrier layer of a GTO thyristor |
| 02/01/1995 | EP0536152B1 Monolithically integrated semiconductor arrangement with a cover electrode |
| 02/01/1995 | CN1098227A Semiconductor device and method for forming the same |
| 02/01/1995 | CN1098221A Nonvolatile semiconductor memories with a cell structure suitable for a high speed operation and a low power supply voltage |
| 01/31/1995 | US5386502 Painting pattern generation system using outline data and flag data |
| 01/31/1995 | US5386388 Single cell reference scheme for flash memory sensing and program state verification |
| 01/31/1995 | US5386140 Bipolar junction transistor exhibiting improved beta punch-through characteristics |
| 01/31/1995 | US5386138 Semiconductor device with diodes connected in series |
| 01/31/1995 | US5386136 Lightly-doped drain MOSFET with improved breakdown characteristics |
| 01/31/1995 | US5386134 Asymmetric electro-static discharge transistors for increased electro-static discharge hardness |
| 01/31/1995 | US5386133 LDD FET with polysilicon sidewalls |
| 01/31/1995 | US5386132 Multimedia storage system with highly compact memory device |
| 01/31/1995 | US5386131 Semiconductor memory device |
| 01/31/1995 | US5386128 Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output |
| 01/31/1995 | US5385866 Polish planarizing using oxidized boron nitride as a polish stop |
| 01/31/1995 | US5385865 Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface |
| 01/31/1995 | US5385860 Charge transfer device |
| 01/31/1995 | US5385857 Method of manufacturing a semiconductor device with high packing density and having field effect transistors |
| 01/31/1995 | US5385854 Method of forming a self-aligned low density drain inverted thin film transistor |
| 01/31/1995 | US5385853 Method of fabricating a metal oxide semiconductor heterojunction field effect transistor (MOSHFET) |
| 01/31/1995 | US5385852 Method for manufacturing vertical MOS transistors |
| 01/31/1995 | US5385851 Method of manufacturing HEMT device using novolak-based positive-type resist |
| 01/31/1995 | US5385850 Method of forming a doped region in a semiconductor substrate utilizing a sacrificial epitaxial silicon layer |
| 01/31/1995 | US5385634 Forming contact window to source/drain electrode which is near gate electrode of integrated circuit, for improved step coverage |
| 01/26/1995 | WO1995002899A1 Ohmic contact for p-type semiconductor and method for making same |
| 01/26/1995 | WO1995002898A1 Process for fabricating semiconductor devices having arsenic emitters |
| 01/26/1995 | WO1995002897A1 Chemical vapor deposition process for fabricating layered superlattice materials |
| 01/26/1995 | WO1995002892A1 High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
| 01/26/1995 | WO1995002884A1 Memory element, monvolatile memory, nonvolatile storage device, and method for storing information by use of the storage device |
| 01/26/1995 | DE4426121A1 Semiconductor device and method for production thereof |
| 01/26/1995 | DE4420052A1 Method for producing a gate in a semiconductor device |
| 01/25/1995 | EP0635923A1 Circuit for protection against high energy overvoltages with controlled voltage clipping |
| 01/25/1995 | EP0635890A1 Active matrix substrate and thin film transistor, and method of its manufacture |
| 01/25/1995 | EP0635889A1 Bidirectional control rectifying semiconductor apparatus |
| 01/25/1995 | EP0635888A1 Structure and fabrication of power MOSFETs, including termination structure |
| 01/25/1995 | EP0635887A1 Integrated device associating a bipolar transistor with a field effect transistor |
| 01/25/1995 | EP0635882A2 A method of fabricating a silicon carbide vertical mosfet |
| 01/25/1995 | EP0635881A2 A method of fabricating a silicon carbide locos vertical mosfet and device |
| 01/25/1995 | EP0635880A1 Method of manufacturing a transistor using silicon on insulator technology |
| 01/24/1995 | US5384742 Non-volatile semiconductor memory |
| 01/24/1995 | US5384731 Semiconductor memory device |
| 01/24/1995 | US5384729 Semiconductor storage device having ferroelectric film |
| 01/24/1995 | US5384485 Contact structure for connecting an electrode to a semiconductor |
| 01/24/1995 | US5384479 Field effect transistor with T-shaped gate electrode |
| 01/24/1995 | US5384476 Short channel MOSFET with buried anti-punch through region |
| 01/24/1995 | US5384475 Semiconductor device and method of manufacturing the same |
| 01/24/1995 | US5384470 High temperature rectifying contact including polycrystalline diamond and method for making same |
| 01/24/1995 | US5384283 Resist protection of ball limiting metal during etch process |
| 01/24/1995 | US5384280 Method of manufacturing a semiconductor device isolated by a trench |
| 01/24/1995 | US5384273 Method of making a semiconductor device having a short gate length |
| 01/24/1995 | US5384271 Method for reduction of off-current in thin film transistors |
| 01/24/1995 | US5384270 Method of producing silicon carbide MOSFET |
| 01/24/1995 | US5384266 Electronic device manufacture using ion implantation |
| 01/24/1995 | US5384152 Method for forming capacitors with roughened single crystal plates |
| 01/24/1995 | CA2010803C Capacitive semiconductive sensor with hinged silicon diaphragm for linear movement |
| 01/19/1995 | WO1995002258A1 Schottky barrier rectifier with mos trench |
| 01/18/1995 | EP0634799A1 Transit time diode |
| 01/18/1995 | EP0634798A1 Semiconductor device with an MOST provided with an extended drain region for high voltages |
| 01/18/1995 | EP0634797A2 Thin film semiconductor device for active matrix panel and method of manufacturing the same |
| 01/18/1995 | EP0634796A1 Insulated gate bipolar transistor |
| 01/18/1995 | EP0634795A2 An integrated device having MOS transistors which enable positive and negative voltage swings |
| 01/18/1995 | EP0634053A1 METHOD AND STRUCTURE FOR SUPPRESSING CHARGE LOSS IN EEPROMs/EPROMs AND INSTABILITIES IN SRAM LOAD RESISTORS |
| 01/18/1995 | EP0582710A4 Electrically programmable memory cell. |
| 01/17/1995 | US5383212 Free standing quantum well structure |
| 01/17/1995 | US5382828 Triple self-aligned bipolar junction transistor |
| 01/17/1995 | US5382826 Stacked high voltage transistor unit |
| 01/17/1995 | US5382825 Spiral edge passivation structure for semiconductor devices |
| 01/17/1995 | US5382822 Metal-insulator semiconductor field-effect transistor |
| 01/17/1995 | US5382821 High power field effect transistor |
| 01/17/1995 | US5382818 Lateral semiconductor-on-insulator (SOI) semiconductor device having a buried diode |
| 01/17/1995 | US5382817 Semiconductor device having a ferroelectric capacitor with a planarized lower electrode |
| 01/17/1995 | US5382816 Semiconductor device having vertical transistor with tubular double-gate |
| 01/17/1995 | US5382815 Carrier conduction conductor-insulator semiconductor (CIS) transistor |
| 01/17/1995 | US5382814 Semiconductor device with low thermally generated leakage current |
| 01/17/1995 | US5382812 Diamond and II-VI heterojunction semiconductor light emitting device |
| 01/17/1995 | US5382809 Doped diamond |
| 01/17/1995 | US5382808 Metal boride ohmic contact on diamond and method for making same |
| 01/17/1995 | US5382807 Field effect thin film transistor and static-type semiconductor memory device provided with memory cell having complementary field effect transistor and method of manufacturing the same |
| 01/17/1995 | US5382539 Method for manufacturing a semiconductor device including nonvolatile memories |
| 01/17/1995 | US5382538 Method for forming MOS transistors having vertical current flow and resulting structure |
| 01/17/1995 | US5382537 Method of making thin film transistors |
| 01/17/1995 | US5382536 Method of fabricating lateral DMOS structure |
| 01/17/1995 | US5382535 Method of fabricating performance lateral double-diffused MOS transistor |
| 01/17/1995 | US5382534 Semiconductors |
| 01/17/1995 | US5382533 Method of manufacturing small geometry MOS field-effect transistors having improved barrier layer to hot electron injection |
| 01/17/1995 | US5382532 Method for fabricating CMOS semiconductor devices |
| 01/17/1995 | US5381753 Semiconductors, lasers, transistors |
| 01/17/1995 | US5381696 Semiconductor stress sensor |
| 01/17/1995 | CA2007412C Lateral transistor and method of making same |
| 01/13/1995 | CA2127645A1 Semiconductor device with an most provided with an extended drain region for high voltages |
| 01/12/1995 | WO1995001653A1 Transistors and methods for fabrication thereof |
| 01/12/1995 | WO1995001652A1 Electrical charge transfer apparatus |
| 01/12/1995 | WO1995001649A1 Integrated circuit structure with programmable conductive electrode/interconnect material and method of making same |
| 01/12/1995 | DE4423782A1 Functional plastic element |
| 01/12/1995 | DE4422791A1 Semiconductor device with inversion-inducing gate |
| 01/11/1995 | EP0633612A2 Fast charging MOS capacitor structure for high magnitude voltage of either positive or negative polarity |
| 01/11/1995 | EP0633611A1 Insulated gate bipolar transistor |
| 01/11/1995 | EP0633609A2 Composite board, and method of fabricating a composite board |