| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/06/1994 | EP0590895A2 Bi-directional MOSFET switch |
| 04/06/1994 | EP0590809A2 Nonvolatile semiconductor storage device |
| 04/06/1994 | EP0590804A1 Vertically isolated monolithic bipolar high-power transistor with top collector |
| 04/06/1994 | EP0590319A2 A non-volatile memory cell |
| 04/06/1994 | EP0589963A1 A semiconductor component for transient voltage limiting |
| 04/06/1994 | EP0436601B1 Metallization systems for heater/sensor elements |
| 04/06/1994 | EP0344282B1 Semi-conductive devices fabricated on soi wafers |
| 04/06/1994 | EP0299087B1 Semiconductor device and method of fabricating the same |
| 04/05/1994 | US5301152 Semiconductor memory device equipped with sense amplifier circuit which eliminates a transient pulse at an output data terminal |
| 04/05/1994 | US5301048 Active matrix display device with Schottky contact switching elements |
| 04/05/1994 | US5300815 Technique of increasing bond pad density on a semiconductor die |
| 04/05/1994 | US5300804 Mask ROM device having highly integrated memory cell structure |
| 04/05/1994 | US5300803 Source side injection non-volatile memory cell |
| 04/05/1994 | US5300802 Semiconductor integrated circuit device having single-element type non-volatile memory elements |
| 04/05/1994 | US5300799 Nonvolatile semiconductor storage device with ferroelectric capacitors |
| 04/05/1994 | US5300795 GaAs FET with resistive AlGaAs |
| 04/05/1994 | US5300794 Method of fabricating highly lattice mismatched quantum well structures |
| 04/05/1994 | US5300793 On substrate having crystal face of (100) of zincblende structure is semiconductor material of wurtzite structure in bulk state |
| 04/05/1994 | US5300455 Process for producing an electrically conductive diffusion barrier at the metal/silicon interface of a MOS transistor |
| 04/05/1994 | US5300451 Process for forming a buried drain or collector region in monolithic semiconductor devices |
| 04/05/1994 | US5300449 Active matrix substrate for liquid-crystal display and method of fabricating the active matrix substrate |
| 04/05/1994 | US5300448 High voltage thin film transistor having a linear doping profile and method for making |
| 04/05/1994 | US5300447 Method of manufacturing a minimum scaled transistor |
| 04/05/1994 | US5300446 Selectively growing a mask material layer with side-projection |
| 04/05/1994 | US5300445 Production method of an HEMT semiconductor device |
| 03/31/1994 | WO1994007261A1 Reduction of bipolar gain and improvement in snap-back sustaining voltage in soi field effect transistor |
| 03/31/1994 | WO1994007177A1 Color filter system for display panels |
| 03/31/1994 | WO1994007026A1 Capacitive discharge ignition system with self-triggering solid state switch |
| 03/31/1994 | DE4323814A1 MISFET with minimal current - comprises diamond insulating layer between gate electrodes and semiconductor |
| 03/31/1994 | DE4232814A1 Metallic contact surfaces for semiconductor substrate - with opposing edges of adjacent contacts surfaces parallel to crystallographic grid direction of semiconductor |
| 03/30/1994 | EP0589713A2 A thin film semiconductor device and a method for producing the same |
| 03/30/1994 | EP0589675A2 BiCDMOS process technology and structures |
| 03/30/1994 | EP0589631A1 Recessed, self aligned, low base resistance structure |
| 03/30/1994 | EP0589519A2 Electronic device manufacture |
| 03/30/1994 | EP0589478A2 Liquid crystal display device |
| 03/29/1994 | US5299247 Signal processing device having frequency-adaptive sampling |
| 03/29/1994 | US5299166 Device for preventing excess erasing of a NAND-type flash memory and method thereof |
| 03/29/1994 | US5299155 Dynamic random access memory device with capacitor between vertically aligned FETs |
| 03/29/1994 | US5299041 Active matrix, high definition, liquid crystal display structure |
| 03/29/1994 | US5298891 Data line defect avoidance structure |
| 03/29/1994 | US5298793 Aluminum-nickel layer positioned between two alumnium layers |
| 03/29/1994 | US5298789 Semiconductor component for a high blocking bias |
| 03/29/1994 | US5298788 Avalanche diode in a bipolar integrated circuit |
| 03/29/1994 | US5298787 Semiconductor embedded layer technology including permeable base transistor |
| 03/29/1994 | US5298786 SOI lateral bipolar transistor with edge-strapped base contact and method of fabricating same |
| 03/29/1994 | US5298785 Semiconductor device |
| 03/29/1994 | US5298781 Vertical current flow field effect transistor with thick insulator over non-channel areas |
| 03/29/1994 | US5298780 Semiconductor device and method of fabricating same |
| 03/29/1994 | US5298779 Collector of a bipolar transistor compatible with MOS technology |
| 03/29/1994 | US5298778 Solid state image pickup device |
| 03/29/1994 | US5298776 Solid state imager element |
| 03/29/1994 | US5298773 Silicon-on-insulator H-transistor layout for gate arrays |
| 03/29/1994 | US5298771 Color imaging charge-coupled array with photosensitive layers in potential wells |
| 03/29/1994 | US5298770 Power switching MOS transistor |
| 03/29/1994 | US5298769 GTO thyristor capable of preventing parasitic thyristors from being generated |
| 03/29/1994 | US5298767 Multilayer, p-n type junction |
| 03/29/1994 | US5298766 Diamond heterojunction diode |
| 03/29/1994 | US5298765 Diamond Schottky gate type field-effect transistor |
| 03/29/1994 | US5298764 Semiconductor memory device having a field effect transistor with a channel formed from a polycrystalline silicon film |
| 03/29/1994 | US5298763 Intrinsically doped semiconductor structure and method for making |
| 03/29/1994 | US5298762 Quantum well switching device with stimulated emission capabilities |
| 03/29/1994 | US5298461 Method of forming ohmic contact electrodes for n-type semiconductor cubic boron nitride |
| 03/29/1994 | US5298457 Method of making semiconductor devices using epitaxial techniques to form Si/Si-Ge interfaces and inverting the material |
| 03/29/1994 | US5298455 Method for producing a non-single crystal semiconductor device |
| 03/29/1994 | US5298448 Method of making two-phase buried channel planar gate CCD |
| 03/29/1994 | US5298447 Method of fabricating a flash memory cell |
| 03/29/1994 | US5298445 Forming ohmic electrode on second semiconductor layer |
| 03/29/1994 | US5298444 Method for manufacturing a field effect transistor |
| 03/29/1994 | US5298443 Process for forming a MOSFET |
| 03/29/1994 | US5298442 Providing first and third regions of first conductivity type and second region of second conductivity type in middle |
| 03/29/1994 | US5298441 Method of making high transconductance heterostructure field effect transistor |
| 03/29/1994 | US5298440 Forming silicide layer on first and second polysilicon region and maintaining third polysilicon region is silicide-free |
| 03/29/1994 | US5298439 Forming three layers, and a contact on emitter layer, forming mesa region on emitter, protective covering of mesa region |
| 03/29/1994 | US5298438 Forming multi-dopant and contact layers, selective etching |
| 03/29/1994 | US5298437 Fabrication process for Schottky barrier diodes on a single poly bipolar process |
| 03/29/1994 | US5298436 Changing at least one of the factor selected from flow rate and partial pressure of deposition gas |
| 03/29/1994 | US5298435 Application of electronic properties of germanium to inhibit n-type or p-type diffusion in silicon |
| 03/29/1994 | US5298108 Serpentine superlattice methods and devices |
| 03/29/1994 | CA2051112C Semiconductor device |
| 03/23/1994 | EP0588503A2 Integrated circuit magnetic memory element and method of making same |
| 03/23/1994 | EP0588487A2 Method of making thin film transistors |
| 03/23/1994 | EP0588402A2 A semiconductor memory device |
| 03/23/1994 | EP0588370A2 Manufacturing method of thin film transistor and semiconductor device utilized for liquid crystal display |
| 03/23/1994 | EP0588320A2 Semiconductor device having planar junction |
| 03/23/1994 | EP0588300A2 Semiconductor transistor |
| 03/23/1994 | EP0588260A2 Diamond semiconductor device |
| 03/23/1994 | EP0588067A2 High withstand voltage M I S field effect transistor and semiconductor integrated circuit |
| 03/23/1994 | EP0588062A1 Quantum Device and its Manufacturing Method |
| 03/23/1994 | EP0588026A2 Turn-off high-power semiconductor device |
| 03/23/1994 | EP0588009A2 Method of forming borderless contacts using a removable mandrel |
| 03/23/1994 | EP0587996A2 Conductive diffusion barrier |
| 03/23/1994 | EP0436588B1 Low stress polysilicon microstructures |
| 03/23/1994 | EP0333838B1 GaAs ELECTRICAL CIRCUIT DEVICES WITH LANGMUIR-BLODGETT INSULATOR LAYER |
| 03/23/1994 | CN1084317A Silicon power triode core |
| 03/22/1994 | US5297260 Processor having a plurality of CPUS with one CPU being normally connected to common bus |
| 03/22/1994 | US5297148 Memory card connectable to a computer system |
| 03/22/1994 | US5297096 Nonvolatile semiconductor memory device and data erasing method thereof |
| 03/22/1994 | US5296835 Variable resistor and neuro device using the variable resistor for weighting |
| 03/22/1994 | US5296733 Hetero junction bipolar transistor with improved electrode wiring contact region |
| 03/22/1994 | US5296732 Bipolar transistor |