| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 03/22/1994 | US5296731 Semiconductor integrated circuit device with alpha rays resistance |
| 03/22/1994 | US5296730 Semiconductor pressure sensor for sensing pressure applied thereto |
| 03/22/1994 | US5296728 Compound semiconductor device with different gate-source and gate-drain spacings |
| 03/22/1994 | US5296727 Double gate FET and process for manufacturing same |
| 03/22/1994 | US5296725 Integrated multicelled semiconductor switching device for high current applications |
| 03/22/1994 | US5296721 Strained interband resonant tunneling negative resistance diode |
| 03/22/1994 | US5296719 Quantum device and fabrication method thereof |
| 03/22/1994 | US5296716 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
| 03/22/1994 | US5296653 Device having a multi-layered conductor structure |
| 03/22/1994 | US5296411 Method for achieving an ultra-reliable thin oxide using a nitrogen anneal |
| 03/22/1994 | US5296406 Rectification a multilayer metal element with dielectrics to form integrated circuits |
| 03/22/1994 | US5296403 Method of manufacturing a static induction field-effect transistor |
| 03/22/1994 | US5296401 MIS device having p channel MOS device and n channel MOS device with LDD structure and manufacturing method thereof |
| 03/22/1994 | US5296398 Forming a multilayer element with photoresists pattern films, removal of insulating films and doping |
| 03/22/1994 | US5296397 Method for manufacturing an EPROM cell |
| 03/22/1994 | US5296395 Forming a multilayer element with gallium nitride and aluminum gallium nitride layers |
| 03/22/1994 | US5296394 Transistors formed with photoresists and annealing |
| 03/22/1994 | US5296391 Method of manufacturing a bipolar transistor having thin base region |
| 03/22/1994 | US5296390 Method for fabricating a semiconductor device having a vertical channel of carriers |
| 03/22/1994 | US5296389 Semi-insulating substrate emitter, coating with layers either with or without indium, forming collector layer and patterns in coatings |
| 03/22/1994 | US5296387 Diffusion of germanium atoms and multilayer elements |
| 03/22/1994 | US5296386 Method of providing lower contact resistance in MOS transistor structures |
| 03/22/1994 | US5296258 Method of forming silicon carbide |
| 03/22/1994 | US5295395 Diaphragm-based-sensors |
| 03/18/1994 | EP0462270A4 Thin, dielectrically isolated island resident transistor structure having low collector resistance. |
| 03/17/1994 | WO1994006158A1 Field-effect-controlled semiconductor component |
| 03/17/1994 | WO1994006153A1 Ohmic contact structure between platinum and silicon carbide |
| 03/17/1994 | WO1994006024A1 Acceleration sensor |
| 03/17/1994 | DE4230425A1 Depletion-layer field effect transistor mfr. - using ion implantation process which is accelerated by dual-purpose masking of source and drain regions with their contacts which define boundary of gate electrode |
| 03/16/1994 | EP0587520A1 A SiGe thin film or SOI MOSFET and method for making the same |
| 03/16/1994 | EP0587417A2 Boride materials for electronic elements and method of preparing the same |
| 03/16/1994 | EP0587399A2 Semiconductor device incorporating a contact and manufacture thereof |
| 03/16/1994 | EP0587212A2 ESD protection for inputs requiring operation beyond supply voltages |
| 03/16/1994 | EP0587179A2 Charge transfer device |
| 03/16/1994 | EP0587176A2 Gate wiring of DMOSFET |
| 03/16/1994 | EP0587136A2 Mixer circuit |
| 03/16/1994 | EP0586835A1 High speed, low gate/drain capacitance dmos device |
| 03/16/1994 | EP0586735A1 MOS transistor |
| 03/16/1994 | EP0586716A1 Power MOSFET with improved avalanche stability |
| 03/16/1994 | CN1024066C Semiconductor device and method of manufacturing semiconductor device |
| 03/15/1994 | US5294837 Semiconductor integrated circuit capable of correcting wiring skew |
| 03/15/1994 | US5294836 Semiconductor device having a wiring strip of noble metal and process of fabricating the semiconductor device |
| 03/15/1994 | US5294834 Multilayer, gold phosphide |
| 03/15/1994 | US5294825 High breakdown voltage semiconductor device |
| 03/15/1994 | US5294824 High voltage transistor having reduced on-resistance |
| 03/15/1994 | US5294821 Thin-film SOI semiconductor device having heavily doped diffusion regions beneath the channels of transistors |
| 03/15/1994 | US5294820 Field-effect transistor |
| 03/15/1994 | US5294819 Single-transistor cell EEPROM array for analog or digital storage |
| 03/15/1994 | US5294818 MISFET including GaAs substrate and a Group II-VI gate insulator |
| 03/15/1994 | US5294817 Output circuit for charged transfer device and having a high detection sensitivity |
| 03/15/1994 | US5294816 Unit cell arrangement for emitter switched thyristor with base resistance control |
| 03/15/1994 | US5294814 Vertical diamond field effect transistor |
| 03/15/1994 | US5294811 Thin film semiconductor device having inverted stagger structure, and device having such semiconductor device |
| 03/15/1994 | US5294809 Resonant tunneling diode with reduced valley current |
| 03/15/1994 | US5294807 Quantum effect device in which conduction between a plurality of quantum dots or wires is achieved by tunnel transition |
| 03/15/1994 | US5294564 Forming a thin monocrystalline layer with modulation or doping along a direction parallel to the confinement layers |
| 03/15/1994 | US5294559 Semiconductors |
| 03/15/1994 | US5294558 Method of making double-self-aligned bipolar transistor structure |
| 03/15/1994 | US5294556 Semiconductor on insulator, alignment |
| 03/15/1994 | US5294555 Method of manufacturing thin film transistor and active matrix assembly including same |
| 03/15/1994 | US5294486 Stack of gold-nickel-gold-nickel-copper; diffusion prevention |
| 03/12/1994 | CA2104542A1 Mixer circuit |
| 03/10/1994 | DE4329304A1 Semiconductor memory device with electrical write-in and erasure, e.g. flash EEPROM - has insulating film of greater thickness than gate insulating layer applied to source and gate diffusion zones |
| 03/10/1994 | DE4327653A1 Non-volatile semiconductor memory device for flash memory - has charge storage electrode and control electrode of larger width above isolation region than above channel region, in direction of cell column |
| 03/10/1994 | DE4228832A1 Feldeffekt-gesteuertes Halbleiterbauelement Field-effect-controlled semiconductor device |
| 03/09/1994 | EP0586220A1 Reflection type liquid crystal display device |
| 03/09/1994 | EP0586147A1 A semiconductor device and method of manufacture |
| 03/09/1994 | EP0585972A2 A semiconductor device and a method for the production of an insulated film used in this device |
| 03/09/1994 | EP0585942A1 Dual gate MESFET |
| 03/08/1994 | US5293560 Multi-state flash EEPROM system using incremental programing and erasing methods |
| 03/08/1994 | US5293512 Semiconductor device having a groove type isolation region |
| 03/08/1994 | US5293510 Semiconductor device with ferroelectric and method of manufacturing the same |
| 03/08/1994 | US5293337 Electrically erasable programmable read-only memory with electric field decreasing controller |
| 03/08/1994 | US5293335 Ceramic thin film memory device |
| 03/08/1994 | US5293331 High density EEPROM cell with tunnel oxide stripe |
| 03/08/1994 | US5293328 Electrically reprogrammable EPROM cell with merged transistor and optiumum area |
| 03/08/1994 | US5293212 Non-volatile semiconductor memory device allowing erase of storage data of an arbitrary memory cell and method of erasing data in non-volatile semiconductor memory device |
| 03/08/1994 | US5293084 High speed logic circuit |
| 03/08/1994 | US5293075 Semiconductor device with PZT/PLZT film and lead-containing electrode |
| 03/08/1994 | US5293063 Monolithic structure comprising two sets of bidirectional protection diodes |
| 03/08/1994 | US5293062 FET nonvolatile memory with composite gate insulating layer |
| 03/08/1994 | US5293058 Linear voltage-controlled resistance element |
| 03/08/1994 | US5293057 Electrostatic discharge protection circuit for semiconductor device |
| 03/08/1994 | US5293056 Semiconductor device with high off-breakdown-voltage and low on resistance |
| 03/08/1994 | US5293054 Emitter switched thyristor without parasitic thyristor latch-up susceptibility |
| 03/08/1994 | US5293053 Integrated circuit device |
| 03/08/1994 | US5293051 Photoswitching device including a MOSFET for detecting zero voltage crossing |
| 03/08/1994 | US5293050 Semiconductor quantum dot light emitting/detecting devices |
| 03/08/1994 | US5292683 Method of isolating semiconductor devices and arrays of memory integrated circuitry |
| 03/08/1994 | US5292682 Method of making two-phase charge coupled device |
| 03/08/1994 | US5292680 Method of forming a convex charge coupled device |
| 03/08/1994 | US5292679 Process for producing a semiconductor memory device having memory cells including transistors and capacitors |
| 03/08/1994 | US5292675 Method for forming a MOS transistor and structure thereof |
| 03/08/1994 | US5292674 Method of making a metal-oxide semiconductor field-effect transistor |
| 03/08/1994 | US5292673 Method of manufacturing a semiconductor device |
| 03/08/1994 | US5292672 Method of manufacturing an insulated gate bipolar transistor |
| 03/08/1994 | US5292670 Sidewall doping technique for SOI transistors |
| 03/08/1994 | CA2039777C N-channel clamp for esd protection in self-aligned silicided cmos process |
| 03/08/1994 | CA1327646C Bipolar field-effect electrically erasable programmable read only memory cell and method of manufacture |
| 03/04/1994 | CA2104745A1 Field effect transistor |