| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/15/1995 | EP0639028A1 Improved output circuit for charge transfer devices |
| 02/15/1995 | EP0638938A2 SOI transistor with improved source-high performance |
| 02/15/1995 | EP0638937A2 Ohmic electrode, its fabricating method and semiconductor device using this electrode |
| 02/15/1995 | EP0638935A1 Method of making a BicMOS device |
| 02/15/1995 | EP0638205A1 Mos gated thyristor with remote turn-off electrode |
| 02/15/1995 | EP0638204A1 Base resistance controlled mos gated thyristor with improved turn-off characteristics |
| 02/15/1995 | EP0638203A1 Mos gated thyristor having on-state current saturation capability |
| 02/15/1995 | EP0638202A1 Self-aligned thin-film transistor constructed using lift-off technique |
| 02/14/1995 | US5390146 Reference switching circuit for flash EPROM |
| 02/14/1995 | US5390143 Non-volatile static memory devices and operational methods |
| 02/14/1995 | US5389815 Semiconductor diode with reduced recovery current |
| 02/14/1995 | US5389813 Power semiconductor device with temperature sensor |
| 02/14/1995 | US5389811 Fault-protected overvoltage switch employing isolated transistor tubs |
| 02/14/1995 | US5389809 Field effect transistor drain structure |
| 02/14/1995 | US5389808 Non-volatile semiconductor memory with increased capacitance between floating and control gates |
| 02/14/1995 | US5389807 Field effect transistor |
| 02/14/1995 | US5389804 Resonant-tunneling heterojunction bipolar transistor device |
| 02/14/1995 | US5389803 High-gain Si/SiGe MIS heterojunction bipolar transistors |
| 02/14/1995 | US5389802 Heterojunction field effect transistor (HJFET) having an improved frequency characteristic |
| 02/14/1995 | US5389801 Semiconductor device having increased current capacity |
| 02/14/1995 | US5389799 First and second semiconductor layers of different conductivity types containing carbon as constituent element, at least one of which is doped with chromium |
| 02/14/1995 | US5389798 High-speed semiconductor device with graded collector barrier |
| 02/14/1995 | US5389580 Thin film semiconductor device and method of production |
| 02/14/1995 | US5389576 Method of processing a polycide structure |
| 02/14/1995 | US5389574 Etching gallium arsenide using mixture of fluorocarbon, silicon chloride, rare gas |
| 02/14/1995 | US5389571 Holding heated single crystal silicon substrate in atmosphere containing organic aluminum compound and nitrogen compound to form thin film on surface, forming single crystal layers of gallium aluminum indium nitride on intermediate layer |
| 02/14/1995 | US5389570 Thermal deposition of higher order silane gas and diborane gas |
| 02/14/1995 | US5389567 Method of forming a non-volatile DRAM cell |
| 02/14/1995 | US5389564 Method of forming a GaAs FET having etched ohmic contacts |
| 02/14/1995 | US5389563 Method of fabricating a bipolar transistor having a high ion concentration buried floating collector |
| 02/14/1995 | US5389562 Double heterojunction bipolar transistor and the method of manufacture therefor |
| 02/14/1995 | US5389561 Method for making SOI type bipolar transistor |
| 02/14/1995 | US5389557 Junction capacitance and body effect are reduced |
| 02/14/1995 | US5389554 Epitaxially depositing emitter layer of aluminum gallium arsenide adjacent base layer, providing ballasting resistance to distribute current evenly through emitter fingers |
| 02/14/1995 | US5389553 Methods for fabrication of transistors |
| 02/14/1995 | US5389552 Transistors having bases with different shape top surfaces |
| 02/14/1995 | US5389198 Structure and method of manufacturing the same |
| 02/14/1995 | US5388460 Capacitive sensor for detecting a physical value such as acceleration |
| 02/09/1995 | WO1995004375A1 Semiconductor device and its manufacture |
| 02/09/1995 | WO1995004374A1 A reverse field plate, junction-terminating structure |
| 02/09/1995 | WO1995004371A1 METHOD FOR FORMING THIN TUNNELING WINDOWS IN EEPROMs |
| 02/09/1995 | WO1995004301A1 Silicon pixel electrode |
| 02/09/1995 | WO1995004284A2 Electrostatically force balanced silicon accelerometer |
| 02/09/1995 | WO1995004265A2 Dielectrically isolated resonant microsensors |
| 02/09/1995 | WO1995004171A1 Process for producing high-resistance silicon carbide |
| 02/09/1995 | DE3051162C2 High reverse voltage static induction thyristor |
| 02/09/1995 | CA2168128A1 Electrostatically force balanced silicon accelerometer |
| 02/08/1995 | EP0637848A1 Amplifying gate thyristor with increased holding current |
| 02/08/1995 | EP0637847A2 Improvements in or relating to transistor switches |
| 02/08/1995 | EP0637846A2 Metal crossover in high voltage IC with graduated doping control |
| 02/08/1995 | EP0637845A1 Capacitor having a metal-oxide dielectric |
| 02/08/1995 | EP0637844A2 Semi conductor device constituting multi-stage power amplifier |
| 02/08/1995 | EP0637840A1 Integrated circuit with active devices under bond pads |
| 02/08/1995 | EP0637837A2 Method for fabricating a thin film transistor |
| 02/08/1995 | EP0637402A1 Method of making a dual-poly non-volatile memory device using a third polysilicon layer |
| 02/08/1995 | EP0637386A1 Method for fabricating microstructures. |
| 02/08/1995 | CN1098556A Semiconductor and process for fabricating the same |
| 02/08/1995 | CN1098555A Semiconductor device and method of fabricating the same |
| 02/08/1995 | CN1098554A Semiconductor, semiconductor device, and method for fabricating the same |
| 02/08/1995 | CN1027610C Refractory metal capped low resistivity metal conductor lines and vias |
| 02/07/1995 | US5388137 Buried channel charge coupled device |
| 02/07/1995 | US5388068 Superconductor-semiconductor hybrid memory circuits with superconducting three-terminal switching devices |
| 02/07/1995 | US5387830 Semiconductor device with excess current prevention circuit |
| 02/07/1995 | US5387815 Semiconductor chip module |
| 02/07/1995 | US5387813 Transistors with emitters having at least three sides |
| 02/07/1995 | US5387811 Composite semiconductor device with a particular bipolar structure |
| 02/07/1995 | US5387808 Semiconductor device |
| 02/07/1995 | US5387807 P-N junction diffusion barrier employing mixed dopants |
| 02/07/1995 | US5387806 GTO-thyristor |
| 02/07/1995 | US5387805 Field controlled thyristor |
| 02/07/1995 | US5387804 A heterojunction consisting of silicon carbide substrate, a layer made of gallium nitride, aluminum nitride and aluminum gallium nitride; stability |
| 02/07/1995 | US5387553 Method for forming a lateral bipolar transistor with dual collector, circular symmetry and composite structure |
| 02/07/1995 | US5387549 Process for fabricating ohmic contact |
| 02/07/1995 | US5387545 Deoxidizing, doping the surface natural silicon dioxide with hydrogen and impurities gas mixtures |
| 02/07/1995 | US5387544 Method of making a semiconductor device including carbon as a dopant |
| 02/07/1995 | US5387541 Method of making silicon-on-porous-silicon by ion implantation |
| 02/07/1995 | US5387537 Process for manufacturing isolated semiconductor components in a semiconductor wafer |
| 02/07/1995 | US5387536 Method of making a low capacitance floating diffusion structure for a solid state image sensor |
| 02/07/1995 | US5387535 Method of fabricating semiconductor devices in CMOS technology with local interconnects |
| 02/07/1995 | US5387530 Threshold optimization for soi transistors through use of negative charge in the gate oxide |
| 02/07/1995 | US5387529 Production method of a MESFET semiconductor device |
| 02/07/1995 | US5387528 Method of manufacturing a semiconductor device comprising an insulated gate field effect device |
| 02/07/1995 | US5387459 Multilayer structure having an epitaxial metal electrode |
| 02/07/1995 | US5387316 Wafer etch protection method |
| 02/07/1995 | US5387007 Gas generator of thin-walled structure |
| 02/07/1995 | CA2003134C Solid state, quantum mechanical, electron and hole wave devices |
| 02/04/1995 | CA2129327A1 Field effect transistor |
| 02/02/1995 | WO1995003629A1 Thin film semiconductor device, its manufacture, and display system |
| 02/02/1995 | WO1995003625A1 Pad structure with parasitic mos transistor for use with semiconductor devices |
| 02/02/1995 | DE4426590A1 Kapazitiver Halbleiter-Beschleunigungssensor Capacitive semiconductor acceleration sensor |
| 02/02/1995 | DE4421633A1 Semiconductor device and method for production thereof |
| 02/02/1995 | DE4418611A1 Halbleiterelementkühlvorrichtung Semiconductor element cooling device |
| 02/02/1995 | DE4339721C1 Method for producing a matrix of thin-film transistors |
| 02/01/1995 | EP0637110A1 Free standing quantum well structure |
| 02/01/1995 | EP0637075A1 Semiconductor device sealed with molded resin |
| 02/01/1995 | EP0637072A2 Spin-on conductor process for integrated circuits |
| 02/01/1995 | EP0637069A1 Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures |
| 02/01/1995 | EP0637068A2 Manufacture of thin-film transistors |
| 02/01/1995 | EP0637061A1 Threshold optimization for SOI transistors through use of negative charge in the gate oxide |
| 02/01/1995 | EP0637060A2 Method for forming isolated intrapolycrystalline silicon structures |